WO2007139695A3 - Force input control device and method of fabrication - Google Patents

Force input control device and method of fabrication Download PDF

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Publication number
WO2007139695A3
WO2007139695A3 PCT/US2007/011618 US2007011618W WO2007139695A3 WO 2007139695 A3 WO2007139695 A3 WO 2007139695A3 US 2007011618 W US2007011618 W US 2007011618W WO 2007139695 A3 WO2007139695 A3 WO 2007139695A3
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
fabricating
input control
force input
fabrication
Prior art date
Application number
PCT/US2007/011618
Other languages
French (fr)
Other versions
WO2007139695A2 (en
Inventor
Vladimir Vaganov
Nickolai Belov
Original Assignee
Vladimir Vaganov
Nickolai Belov
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Vladimir Vaganov, Nickolai Belov filed Critical Vladimir Vaganov
Publication of WO2007139695A2 publication Critical patent/WO2007139695A2/en
Publication of WO2007139695A3 publication Critical patent/WO2007139695A3/en

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L5/00—Apparatus for, or methods of, measuring force, work, mechanical power, or torque, specially adapted for specific purposes
    • G01L5/16—Apparatus for, or methods of, measuring force, work, mechanical power, or torque, specially adapted for specific purposes for measuring several components of force
    • G01L5/161—Apparatus for, or methods of, measuring force, work, mechanical power, or torque, specially adapted for specific purposes for measuring several components of force using variations in ohmic resistance
    • G01L5/162—Apparatus for, or methods of, measuring force, work, mechanical power, or torque, specially adapted for specific purposes for measuring several components of force using variations in ohmic resistance of piezoresistors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L1/00—Measuring force or stress, in general
    • G01L1/18—Measuring force or stress, in general using properties of piezo-resistive materials, i.e. materials of which the ohmic resistance varies according to changes in magnitude or direction of force applied to the material
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L1/00—Measuring force or stress, in general
    • G01L1/20—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress
    • G01L1/22—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges
    • G01L1/2206—Special supports with preselected places to mount the resistance strain gauges; Mounting of supports
    • G01L1/2231—Special supports with preselected places to mount the resistance strain gauges; Mounting of supports the supports being disc- or ring-shaped, adapted for measuring a force along a single direction

Abstract

Method of fabricating 3-dimensional force input control devices comprising: providing a first substrate having side one and side two, fabricating stress-sensitive IC components and signal processing IC on the side one of the first substrate, fabricating closed trenches o the side two of the first substrate, said closed trenches create elastic element, frame area, and at least one rigid island separated from the frame areas, providing a second substrate having side one and side two, patterning side two of the second substrate to define area for deep etching, creating a layer of bonding material in the local areas on at least one of the surfaces of the side one of the second substrate and the side two of the first substrate followed by aligning and bonding said corresponding sides, etching the second substrate from the side two through to the first substrate, and dicing the bonded substrates into separate dice.
PCT/US2007/011618 2006-05-24 2007-05-15 Force input control device and method of fabrication WO2007139695A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US80285606P 2006-05-24 2006-05-24
US60/802,856 2006-05-24

Publications (2)

Publication Number Publication Date
WO2007139695A2 WO2007139695A2 (en) 2007-12-06
WO2007139695A3 true WO2007139695A3 (en) 2008-01-24

Family

ID=38779140

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2007/011618 WO2007139695A2 (en) 2006-05-24 2007-05-15 Force input control device and method of fabrication

Country Status (2)

Country Link
US (2) US7791151B2 (en)
WO (1) WO2007139695A2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9032818B2 (en) 2012-07-05 2015-05-19 Nextinput, Inc. Microelectromechanical load sensor and methods of manufacturing the same
US9487388B2 (en) 2012-06-21 2016-11-08 Nextinput, Inc. Ruggedized MEMS force die

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7858438B2 (en) * 2007-06-13 2010-12-28 Himax Technologies Limited Semiconductor device, chip package and method of fabricating the same
US7956381B1 (en) * 2008-08-11 2011-06-07 Hrl Laboratories, Llc Multi-layered integrated circuit and apparatus with thermal management and method
US7846815B2 (en) * 2009-03-30 2010-12-07 Freescale Semiconductor, Inc. Eutectic flow containment in a semiconductor fabrication process
US8806964B2 (en) 2012-03-23 2014-08-19 Honeywell International Inc. Force sensor
US9003899B2 (en) 2012-03-23 2015-04-14 Honeywell International Inc. Force sensor
US9003897B2 (en) 2012-05-10 2015-04-14 Honeywell International Inc. Temperature compensated force sensor
CN105934661B (en) 2014-01-13 2019-11-05 触控解决方案股份有限公司 Miniature reinforcing wafer-level MEMS force snesor
US10444862B2 (en) 2014-08-22 2019-10-15 Synaptics Incorporated Low-profile capacitive pointing stick
JP2016217804A (en) * 2015-05-18 2016-12-22 タッチエンス株式会社 Multi-axis tactile sensor and method for manufacturing multi-axis tactile sensor
CN117486166A (en) * 2015-06-10 2024-02-02 触控解决方案股份有限公司 Reinforced wafer level MEMS force sensor with tolerance trenches
US10187977B2 (en) 2015-06-29 2019-01-22 Microsoft Technology Licensing, Llc Head mounted computing device, adhesive joint system and method
US10869393B2 (en) 2015-06-29 2020-12-15 Microsoft Technology Licensing, Llc Pedestal mounting of sensor system
WO2018148510A1 (en) 2017-02-09 2018-08-16 Nextinput, Inc. Integrated piezoresistive and piezoelectric fusion force sensor
CN116907693A (en) 2017-02-09 2023-10-20 触控解决方案股份有限公司 Integrated digital force sensor and related manufacturing method
WO2019018641A1 (en) 2017-07-19 2019-01-24 Nextinput, Inc. Strain transfer stacking in a mems force sensor
US11423686B2 (en) 2017-07-25 2022-08-23 Qorvo Us, Inc. Integrated fingerprint and force sensor
US11243126B2 (en) 2017-07-27 2022-02-08 Nextinput, Inc. Wafer bonded piezoresistive and piezoelectric force sensor and related methods of manufacture
US11579028B2 (en) 2017-10-17 2023-02-14 Nextinput, Inc. Temperature coefficient of offset compensation for force sensor and strain gauge
WO2019090057A1 (en) 2017-11-02 2019-05-09 Nextinput, Inc. Sealed force sensor with etch stop layer
WO2019099821A1 (en) 2017-11-16 2019-05-23 Nextinput, Inc. Force attenuator for force sensor
US11186481B2 (en) * 2017-11-30 2021-11-30 Taiwan Semiconductor Manufacturing Company, Ltd. Sensor device and manufacturing method thereof
US10962427B2 (en) 2019-01-10 2021-03-30 Nextinput, Inc. Slotted MEMS force sensor
CN115112286A (en) * 2021-03-19 2022-09-27 美蓓亚三美株式会社 Strain body and force sensor device

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6596344B2 (en) * 2001-03-27 2003-07-22 Sharp Laboratories Of America, Inc. Method of depositing a high-adhesive copper thin film on a metal nitride substrate
US6753850B2 (en) * 2001-07-24 2004-06-22 Cts Corporation Low profile cursor control device
US20050047721A1 (en) * 2003-08-25 2005-03-03 Asia Pacific Microsystems Inc. Electrostatically operated micro-optical devices and method for manufacturing thereof
US6894390B2 (en) * 2003-02-26 2005-05-17 Advanced Micro Devices, Inc. Soft error resistant semiconductor device
US20050190152A1 (en) * 2003-12-29 2005-09-01 Vladimir Vaganov Three-dimensional analog input control device
US20060060877A1 (en) * 2004-09-22 2006-03-23 Edmond John A High efficiency group III nitride-silicon carbide light emitting diode

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2335024A (en) 1998-03-06 1999-09-08 Ibm Joystick for portable computer system
JP4018813B2 (en) 1998-07-03 2007-12-05 富士通株式会社 Mobile phone
TW468128B (en) 1999-01-08 2001-12-11 Acer Peripherals Inc Pointing stick and its manufacturing method
US6809721B2 (en) 1999-04-22 2004-10-26 Gateway, Inc. “Mini-stick” module—new mobiles joystick input device
JP4233174B2 (en) 1999-04-30 2009-03-04 富士通コンポーネント株式会社 pointing device
DE19952087C1 (en) 1999-10-29 2001-06-07 Bosch Gmbh Robert Input device
JP4295883B2 (en) * 1999-12-13 2009-07-15 株式会社ワコー Force detection device
AU2001232876A1 (en) 2000-01-19 2001-07-31 Synaptics, Inc. Capacitive pointing stick
JP2001221700A (en) 2000-02-08 2001-08-17 Nitta Ind Corp Electrostatic capacity sensor
US6697049B2 (en) 2000-05-31 2004-02-24 Darfon Electronics Corp. Pointing stick with a rectangular-shaped hollow structure
US6576556B2 (en) * 2000-09-21 2003-06-10 Mitsubishi Denki Kabushiki Kaisha Method of manufacturing semiconductor device and method of manufacturing infrared image sensor
US6903724B2 (en) 2000-12-08 2005-06-07 Motorola, Inc. Handheld communications devices with joysticks and switch contact layouts therefor
US6950092B2 (en) 2001-02-27 2005-09-27 International Business Machines Corporation Input device with multiple controls having interchangeable functionality
US20020164111A1 (en) * 2001-05-03 2002-11-07 Mirza Amir Raza MEMS assemblies having moving members and methods of manufacturing the same
US6809529B2 (en) 2001-08-10 2004-10-26 Wacoh Corporation Force detector
US6774887B2 (en) 2001-08-23 2004-08-10 Shin Jiuh Corp. Joystick
US6654005B2 (en) 2001-09-21 2003-11-25 Cts Corporation Low profile joy stick and switch
JP4076749B2 (en) * 2001-10-15 2008-04-16 富士フイルム株式会社 Conductive organic compound and electronic device
US6788291B2 (en) 2001-11-06 2004-09-07 Cts Corporation Integrated surface-mount pointing device
US6826042B2 (en) 2002-05-03 2004-11-30 Hewlett-Packard Development Company, L.P. Input device and methods and systems for same
JP3960132B2 (en) 2002-06-06 2007-08-15 松下電器産業株式会社 Multidirectional operation switch and multidirectional input device using the same
US7367232B2 (en) * 2004-01-24 2008-05-06 Vladimir Vaganov System and method for a three-axis MEMS accelerometer
DE102005004878B4 (en) * 2005-02-03 2015-01-08 Robert Bosch Gmbh Micromechanical capacitive pressure sensor and corresponding manufacturing method

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6596344B2 (en) * 2001-03-27 2003-07-22 Sharp Laboratories Of America, Inc. Method of depositing a high-adhesive copper thin film on a metal nitride substrate
US6753850B2 (en) * 2001-07-24 2004-06-22 Cts Corporation Low profile cursor control device
US6894390B2 (en) * 2003-02-26 2005-05-17 Advanced Micro Devices, Inc. Soft error resistant semiconductor device
US20050047721A1 (en) * 2003-08-25 2005-03-03 Asia Pacific Microsystems Inc. Electrostatically operated micro-optical devices and method for manufacturing thereof
US20050190152A1 (en) * 2003-12-29 2005-09-01 Vladimir Vaganov Three-dimensional analog input control device
US20060060877A1 (en) * 2004-09-22 2006-03-23 Edmond John A High efficiency group III nitride-silicon carbide light emitting diode

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9487388B2 (en) 2012-06-21 2016-11-08 Nextinput, Inc. Ruggedized MEMS force die
US9493342B2 (en) 2012-06-21 2016-11-15 Nextinput, Inc. Wafer level MEMS force dies
US9032818B2 (en) 2012-07-05 2015-05-19 Nextinput, Inc. Microelectromechanical load sensor and methods of manufacturing the same

Also Published As

Publication number Publication date
US20100323467A1 (en) 2010-12-23
US20080083962A1 (en) 2008-04-10
US8183077B2 (en) 2012-05-22
WO2007139695A2 (en) 2007-12-06
US7791151B2 (en) 2010-09-07

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