WO2007142969B1 - Isolation structures for integrated circuits and modular methods of forming the same - Google Patents

Isolation structures for integrated circuits and modular methods of forming the same

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Publication number
WO2007142969B1
WO2007142969B1 PCT/US2007/012738 US2007012738W WO2007142969B1 WO 2007142969 B1 WO2007142969 B1 WO 2007142969B1 US 2007012738 W US2007012738 W US 2007012738W WO 2007142969 B1 WO2007142969 B1 WO 2007142969B1
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
trench
isolation region
annular
conductivity type
Prior art date
Application number
PCT/US2007/012738
Other languages
French (fr)
Other versions
WO2007142969A1 (en
Inventor
Hyungsik Ryu
Wai Tien Chan
Donald Ray Disney
Richard K Williams
Jun-Wei Chen
Original Assignee
Advanced Analogic Tech Inc
Hyungsik Ryu
Wai Tien Chan
Donald Ray Disney
Richard K Williams
Jun-Wei Chen
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Analogic Tech Inc, Hyungsik Ryu, Wai Tien Chan, Donald Ray Disney, Richard K Williams, Jun-Wei Chen filed Critical Advanced Analogic Tech Inc
Priority to EP07777316A priority Critical patent/EP2044624A4/en
Priority to KR1020087031002A priority patent/KR101180525B1/en
Priority to JP2009513252A priority patent/JP5608908B2/en
Priority to CN200780027883.3A priority patent/CN101512751B/en
Publication of WO2007142969A1 publication Critical patent/WO2007142969A1/en
Publication of WO2007142969B1 publication Critical patent/WO2007142969B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0642—Isolation within the component, i.e. internal isolation
    • H01L29/0646—PN junctions
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
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    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
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    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
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    • H01L21/76237—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials introducing impurities in trench side or bottom walls, e.g. for forming channel stoppers or alter isolation behavior
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    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
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    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76243—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using silicon implanted buried insulating layers, e.g. oxide layers, i.e. SIMOX techniques
    • H—ELECTRICITY
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    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
    • H01L21/76267—Vertical isolation by silicon implanted buried insulating layers, e.g. oxide layers, i.e. SIMOX techniques
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    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/763—Polycrystalline semiconductor regions
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/823481—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type isolation region manufacturing related aspects, e.g. to avoid interaction of isolation region with adjacent structure
    • H—ELECTRICITY
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/8238—Complementary field-effect transistors, e.g. CMOS
    • H01L21/823878—Complementary field-effect transistors, e.g. CMOS isolation region manufacturing related aspects, e.g. to avoid interaction of isolation region with adjacent structure
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    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
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    • H01L21/8238—Complementary field-effect transistors, e.g. CMOS
    • H01L21/823892—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the wells or tubs, e.g. twin tubs, high energy well implants, buried implanted layers for lateral isolation [BILLI]
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    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0642—Isolation within the component, i.e. internal isolation
    • H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

A variety of isolation structures for semiconductor substrates include a trench formed in the substrate that is filled with a dielectric material or filled with a conductive material and lined with a dielectric layer along the walls of the trench. The trench may be used in combination with doped sidewall isolation regions. Both the trench and the sidewall isolation regions may be annular and enclose an isolated pocket of the substrate. The isolation structures are formed by modular implant and etch processes that do not include significant thermal processing or diffusion of dopants so that the resulting structures are compact and may be tightly packed in the surface of the substrate.

Claims

AMENDED CLAIMS[received by the International Bureau on 28 November 2007 (28.11.07) - 14 pages]
1. An isolation structure formed in a semiconductor substrate of a first conductivity type, the substrate not comprising an epitaxial layer, the structure comprising: a floor isolation region of a second conductivity type opposite to the first conductivity type submerged in the substrate; an annular dielectric-filled trench extending downward from a surface of the substrate, a bottom of the trench being located above the floor isolation region; an annular sidewall region of the second conductivity type extending downward from a bottom of the dielectric-filled trench at least to the floor isolation region such that the annular sidewall region overlaps the floor isolation region, wherein the floor isolation region, dielectric-filled trench and annular sidewall region together enclose an isolated pocket of the substrate.
2. The isolation structure of Claim 1 further comprising a second dielectric-filled trench located in the isolated pocket, a bottom of the second dielectric-filled trench being located above the floor isolation region.
3. The isolation structure of Claim 1 further comprising: a second floor isolation region of the second conductivity type spaced apart laterally from the floor isolation region; a second annular dielectric-filled trench extending downward from the surface of the substrate, a bottom of the second annular dielectric-filled trench being located above the second floor isolation region; a second annular sidewall region of the second conductivity type extending downward from a bottom of the second dielectric-filled trench at least to the second floor isolation region such that the second annular sidewall region overlaps the second floor isolation region, wherein the second floor isolation region, second dielectric-filled trench and second annular sidewall region together enclose a second isolated pocket of the substrate; and a region of the first conductivity type located laterally between the floor isolation region and the second floor isolation region, a doping concentration of the region of the first conductivity type being greater than a doping concentration of the substrate.
4. An isolation structure formed in a semiconductor substrate of a first conductivity type, the substrate not comprising an epitaxial layer, the structure comprising: a floor isolation region of a second conductivity type opposite to the first conductivity type submerged in the substrate; an annular sidewall region of the second conductivity type extending downward from a surface of the substrate at least to the floor isolation region such that the annular sidewall region overlaps the floor isolation region, wherein the floor isolation region and annular sidewall region together enclose an isolated pocket of the substrate; and an annular dielectric-filled trench extending downward from the surface of the substrate, the annular dielectric-filled trench abutting the annular sidewall region.
5. The isolation structure of Claim 4 wherein the annular dielectric-filled trench is enclosed within the annular sidewall region.
6. The isolation structure of Claim 4 further comprising a second dielectric-filled trench located in the isolated pocket, a bottom of the second dielectric-filled trench being located above the floor isolation region.
7. The isolation structure of Claim 4 further comprising a second dielectric-filled trench located in a remaining portion of the substrate outside the isolated pocket.
8. The isolation structure of Claim 4 further comprising: a second floor isolation region of the second conductivity type spaced apart laterally from the floor isolation region; a second annular sidewall region of the second conductivity type extending downward from the surface of the substrate at least to the second floor isolation region such that the second annular sidewall region overlaps the second floor isolation region, wherein the second floor isolation region and second annular sidewall region together enclose a second isolated pocket of the substrate; and a region of the first conductivity type located laterally between the floor isolation region and the second floor isolation region, a doping concentration of the region of the first conductivity type being greater than a doping concentration of the substrate.
9. An isolation structure formed in a semiconductor substrate of a first conductivity type, the substrate not comprising an epitaxial layer, the structure comprising: a floor isolation region of a second conductivity type opposite to the first conductivity type submerged in the substrate; and an annular trench extending downward from a surface of the substrate at least to the floor isolation region, walls of the trench being lined with a dielectric material, the trench containing a conductive material, the conductive material in the trench being in electrical contact with the floor isolation region, wherein the floor isolation region and trench together enclose an isolated pocket of the substrate.
10. The isolation structure of Claim 9 further comprising a dielectric-filled trench located in the isolated pocket, a bottom of the dielectric-filled trench being located above the floor isolation region.
11. The isolation structure of Claim 9 further comprising: a second floor isolation region of the second conductivity type spaced apart laterally from the floor isolation region; a second annular trench extending downward from the surface of the substrate at least to the second floor isolation region, walls of the second annular trench being lined with the dielectric material, the second annular trench containing the conductive material, the conductive material in the second annular trench being in electrical contact with the second floor isolation region, wherein the second floor isolation region and second annular trench together enclose a second isolated pocket of the substrate and a region of the first conductivity type located laterally between the floor isolation region and the second floor isolation region, a doping concentration of the region of the first conductivity type being greater than a doping concentration of the substrate.
12. An isolation structure formed in a semiconductor substrate of a first conductivity type, the substrate not comprising an epitaxial layer, the structure comprising: a floor isolation region of a second conductivity type opposite to the first conductivity type submerged in the substrate; an annular trench extending downward from a surface of the substrate, a bottom of the annular trench being located above the floor isolation region, walls of the annular trench being lined with a dielectric material, the annular trench containing a conductive material; an annular sidewall region of the second conductivity type extending downward from a bottom of the annular trench at least to the floor isolation region such that the annular sidewall region overlaps the floor isolation region, the annular sidewall region being in electrical contact with the conductive material in the annular trench, the annular trench, the annular sidewall region and the floor isolation region together enclosing an isolated pocket of the substrate.
13. The isolation structure of Claim 12 further comprising a dielectric-filled trench located in the isolated pocket, a bottom of the dielectric-filled trench being located above the floor isolation region.
14. The isolation structure of Claim 12 further comprising: a second floor isolation region of the second conductivity type spaced apart laterally from the floor isolation region; a second annular trench extending downward from the surface of the substrate, a bottom of the second annular trench being located above the second floor isolation region, walls of the second annular trench being lined with the dielectric material, the second annular trench containing the conductive material; a second annular sidewall region of the second conductivity type extending downward from a bottom of the second annular trench at least to the second floor isolation region such that the second annular sidewall region overlaps the second floor isolation region, the second annular sidewall region being in electrical contact with the conductive material in the second annular trench, wherein the second annular trench, the second annular sidewall region and the second floor isolation region together enclose a second isolated pocket of the substrate; and a region of the first conductivity type located laterally between the floor isolation region and the second floor isolation region, a doping concentration of the region of the first conductivity type being greater than a doping concentration of the substrate
15. The isolation structure of Claim 12 further comprising: a second floor isolation region of the second conductivity type spaced apart laterally from the floor isolation region; a second annular trench extending downward from the surface of the substrate, a bottom of the second annular trench being located above the second floor isolation region, walls of the second annular trench being lined with the dielectric material, the second annular trench containing the conductive material; a second annular sidewall region of the second conductivity type extending downward from a bottom of the second annular trench at least to the second floor isolation region such that the second annular sidewall region overlaps the second floor isolation region, the second annular sidewall region being in electrical contact with the conductive material in the second annular trench, wherein the second annular trench, the second annular sidewall region and the second floor isolation region together enclose a second isolated pocket of the substrate; and a dielectric-filled trench extending downward from the surface of the substrate between floor isolation region and the second floor isolation region.
16. An isolation structure formed in a semiconductor substrate of a first conductivity type, the substrate not comprising an epitaxial layer, the isolation structure comprising: at least two regions of a second conductivity type, each of the regions comprising: a floor isolation region submerged in the substrate; and an annular sidewall portion extending downward from a surface of the substrate at least to the floor isolation region such that the floor isolation region and the annular sidewall portion together enclose an isolated pocket of the substrate; and a dielectric-filled trench located between the at least two regions of second conductivity type, the dielectric-filled trench extending downward into the substrate to a level below a level of the respective floor isolation regions in the at least two regions of second conductivity type.
17. The isolation structure of Claim 16 further comprising a second dielectric-filled trench in one of the isolated pockets, the bottom of the second dielectric-filled trench being located above the floor isolation region of the region of second conductivity type forming the one of the isolated pockets.
18. A method of forming an isolation structure in a semiconductor substrate of a first conductivity type, the substrate having a top surface, the method comprising: implanting a dopant of a second conductivity type opposite to the first conductivity type to form a floor isolation region, the dopant being implanted with sufficient energy such that an upper junction of the floor isolation region is located below the top surface of the substrate; forming a mask layer over the top surface of the substrate; forming an opening in the mask layer; etching the substrate through the opening in the mask layer to form an annular trench in the substrate, a bottom of the annular trench being located above the floor isolation region; implanting a dopant of the second conductivity type through the bottom of the trench to form a sidewall isolation region, the sidewall region extending downward at least to the floor isolation region; and filling the annular trench with a dielectric material so as to form an isolated pocket of the substrate.
19. The method of Claim 18 further comprising planarizing the top surface of the substrate.
20. The method of Claim 18 comprising: forming a second opening in the mask layer over the area of the isolated pocket; etching the substrate through the second opening in the mask layer to form a second trench, the second trench having a bottom above the floor isolation region; forming a second mask layer in the second trench; allowing the second mask layer to remain in the second trench during the implanting of the dopant of second conductivity type; removing the second mask layer from the second trench; and filling the second trench with the dielectric material.
21. A method of forming an isolation structure in a semiconductor substrate of a first conductivity type, the substrate having a top surface and not comprising an epitaxial layer, the method comprising: implanting a dopant of a second conductivity type opposite to the first conductivity type to form a floor isolation region, the dopant being implanted with sufficient energy such that an upper junction of the floor isolation region is located below the top surface of the substrate; forming a mask layer over the top surface of the substrate; forming an opening in the mask layer; performing multiple implants of the dopant of the second conductivity type through the opening in the mask layer to form an annular region extending downward from the top surface of the substrate at least to the floor isolation region, the floor isolation region and the annular region together forming an isolated pocket of the substrate; forming a second mask layer over the top surface of the substrate; forming an opening in the second mask layer, the opening in the second mask layer being located at least in part over the annular region; etching the substrate through the opening in the second mask layer to form a trench, a bottom of the trench being located above the upper junction of the floor isolation region; and filling the trench with a dielectric material.
22. The method of Claim 21 comprising: forming a second opening in the second mask layer over the area of the isolated pocket; etching the substrate through the second opening in the second mask layer to form a second trench, the second trench having a bottom above the floor isolation region; and filling the second trench with the dielectric material.
23. The method of Claim 21 comprising planarizing the top surface of the substrate.
24. A method of forming an isolation structure in a semiconductor substrate of a first conductivity type, the substrate having a top surface and not comprising an epitaxial layer, the method comprising: implanting a dopant of a second conductivity type opposite to the first conductivity type to form a floor isolation region, the dopant being implanted with sufficient energy such that an upper junction of the floor isolation region is located below the top surface of the substrate; forming a mask layer over the top surface of the substrate; forming an opening in the mask layer; etching the substrate through the opening in the mask layer to form an annular trench in the substrate, the annular trench having a sidewall and a bottom, the bottom of the annular trench being located in the floor isolation region, the floor isolation region and the annular trench together forming an isolated pocket of the substrate; forming a dielectric layer on the bottom and sidewall of the annular trench; removing the dielectric layer from the bottom of the annular trench while leaving the dielectric layer on the sidewall of the annular trench; and introducing a conductive material into the annular trench, the conductive material being in electrical contact with the floor isolation region.
25. The method of Claim 24 comprising: forming a second opening in the mask layer, the second opening being located over an area of the isolated pocket; etching the substrate through the second opening in the mask layer to form an second trench in the substrate, a bottom of the second trench being located above the floor isolation region; and filling the second trench with a dielectric material.
26. The method of Claim 25 wherein forming a dielectric layer on the bottom and sidewall of the trench comprises filling the second trench with a dielectric material.
27. The method of Claim 24 comprising planarizing the top surface of the substrate.
28. A method of forming an isolation structure in a semiconductor substrate of a first conductivity type, the substrate having a top surface and not comprising an epitaxial layer, the method comprising: implanting a dopant of a second conductivity type opposite to the first conductivity type to form a floor isolation region, the dopant being implanted with sufficient energy such that an upper junction of the floor isolation region is located below the top surface of the substrate; forming a mask layer over the top surface of the substrate; forming an opening in the mask layer; etching the substrate through the opening in the mask layer to form an annular trench in the substrate, the annular trench having a sidewall and a bottom, the bottom of the annular trench being located above the floor isolation region; forming a dielectric layer on the bottom and sidewall of the annular trench; removing the dielectric layer from the bottom of the annular trench while leaving the dielectric layer on the sidewall of the annular trench; implanting a dopant of the second conductivity type through the bottom of the trench to form a sidewall isolation region, the sidewall region extending downward at least to the floor isolation region; and introducing a conductive material into the annular trench, the conductive material being in electrical contact with the sidewall isolation region, the floor isolation region, the sidewall isolation region and the annular trench together forming an isolated pocket of the substrate.
29. The method of Claim 28 comprising: forming a second opening in the mask layer, the second opening being located over an area of the isolated pocket; etching the substrate through the second opening in the mask layer to form an second trench in the substrate, a bottom of the second trench being located above the floor isolation region; and filling the second trench with a dielectric material.
30. The method of Claim 29 wherein forming a dielectric layer on the bottom and sidewall of the trench comprises filling the second trench with a dielectric material.
31. The method of Claim 28 comprising planarizing the top surface of the substrate. 50
32. An isolation structure formed in a semiconductor substrate of a first conductivity type, the substrate having a planar top surface and not comprising an epitaxial layer, the structure comprising a region of a second conductivity type opposite to the first conductivity type, the region of second conductivity type being saucer-shaped and having a floor portion substantially parallel to the planar top surface of the substrate and a sloped sidewall portion, the sidewall portion extending downward from the planar top surface of the substrate at an oblique angle and merging with the floor portion, the floor portion and the sidewall portion together forming a isolated pocket of the substrate.
33. The isolation structure of Claim 32 further comprising a dielectric-filled trench located in the isolated pocket, a bottom of the dielectric-filled trench being located above the floor portion of the region of second conductivity type.
34. The isolation structure of Claim 32 further comprising: a second region of the second conductivity type outside the isolated pocket, the second region of second conductivity type comprising a second floor portion substantially parallel to the planar top surface of the substrate and a second annular sidewall portion, the second annular sidewall portion extending downward from the planar top surface of the substrate at an oblique angle and merging with the second floor portion, the second floor portion and the second sidewall portion together forming a second isolated pocket of the substrate; and a dielectric-filled trench extending downward from the planar top surface of the substrate, the dielectric-filled trench being located between the region of second conductivity type and the second region of second conductivity type.
35. The isolation structure of Claim 34 wherein the dielectric-filled trench extends into the substrate to a level below a level of the floor portion and second floor portion.
36. A method of forming an isolation structure in a semiconductor substrate of a first conductivity type, the substrate having a top surface and not comprising an epitaxial layer, the method comprising: forming a mask layer over the top surface of the substrate; forming an opening in the mask layer such that a sidewall of the mask layer around the opening is sloped, a thickness of the mask layer decreasing 51 from a thickness t-i at an outer periphery of the opening to a significantly smaller thicknessat an inner periphery of the opening, the sloped sidewall lying between the outer periphery and the inner periphery of the opening; implanting a dopant of a second conductivity type opposite to the first conductivity type into the substrate, the dopant being implanted at an implantation energy such that the dopant forms a floor isolation region with an upper junction located below the top surface of the substrate, the dopant not penetrating the mask layer at locations where the mask layer has the thickness tι, the dopant forming a sidewall isolation region beneath the sloped sidewall of the mask layer, the sidewall isolation region extending continuously from the floor isolation region to the top surface.
37. The method of Claim 36 further comprising removing the mask layer.
38. A method of forming an isolation structure in a semiconductor substrate of a first conductivity type, the substrate having a top surface and not comprising an epitaxial layer, the method comprising: forming a first mask layer over the top surface of the substrate; forming a first opening in the first mask layer such that a sidewall of the first mask layer around the first opening is sloped, a thickness of the first mask layer decreasing from a thickness t3 at an outer periphery of the first opening to a significantly smaller thickness at an inner periphery of the first opening; forming a second mask layer over the first mask layer; forming a second opening in the second mask layer, the second opening being larger than and overlying and surrounding the first opening; implanting a dopant of a second conductivity type opposite to the first conductivity type into the substrate, the dopant being implanted at an implantation energy such that the dopant forms a floor isolation region and a sidewall isolation region, the floor isolation region being located below the first opening and having an upper junction located below the top surface of the substrate, the sidewall isolation region being located beneath the sloped sidewall of the first mask layer, the sidewall isolation region extending continuously from the floor isolation region to the top surface, the dopant not penetrating the combined first and second mask layers. 52
39. The method of Claim 38 comprising selecting the implantation energy such that the dopant forms a region adjacent the top surface of the substrate at locations where the dopant is implanted only through the thickness t3 of the first mask layer.
40. The method of Claim 38 further comprising removing the first and second mask layers.
41. The method of Claim 38 wherein the floor isolation region and sidewall isolation region combine to isolate a pocket of the substrate
42. The method of Claim 38 wherein the top surface of the substrate is substantially planar before and after the formation of the isolation region.
43. An isolation structure formed in a semiconductor substrate of a first conductivity type, the substrate not comprising an epitaxial layer, the structure comprising: a first floor isolation region of a second conductivity type opposite to the first conductivity type submerged in the substrate; an annular dielectric-filled trench extending downward from a surface of the substrate at least to the first floor isolation region; wherein the first floor isolation region and the dielectric-filled trench together enclose a first isolated pocket of the substrate.
44. The isolation structure of Claim 43 further comprising a second dielectric-filled trench located in the first isolated pocket, a bottom of the second dielectric-filled trench being located above the first floor isolation region.
45. The isolation structure of Claim 43 further comprising: a second floor isolation region of the second conductivity type spaced apart laterally from the first floor isolation region; a second annular dielectric-filled trench extending downward from the surface of the substrate at least to the second floor isolation region, wherein the second floor isolation region and the second annular dielectric-filled trench together enclose a second isolated pocket of the substrate; and a region of the first conductivity type located laterally between the first floor isolation region and the second floor isolation region, a doping concentration of the region of the first conductivity type being greater than a doping concentration of the substrate.
46. The isolation structure of Claim 43 further comprising: 53 a second floor isolation region of the second conductivity type spaced apart laterally from the first floor isolation region; a second annular dielectric-filled trench extending downward from the surface of the substrate at least to the second floor isolation region, wherein the second floor isolation region and the second annular dielectric-filled trench together enclose a second isolated pocket of the substrate; and a third dielectric-filled trench extending downward from the surface of the substrate, the third dielectric-filled trench extending between the first and second floor isolation regions to a level below the first and second floor isolation regions.
47. The isolation structure of Claim 46 further comprising a fourth dielectric-filled trench located in the first isolated pocket, a bottom of the fourth dielectric-filled trench being located above the first floor isolation region.
48. A method of forming an isolation structure in a semiconductor substrate of a first conductivity type, the substrate having a top surface, the method comprising: implanting a dopant of a second conductivity type opposite to the first conductivity type to form a floor isolation region, the dopant being implanted with sufficient energy such that an upper junction of the floor isolation region is located below the top surface of the substrate; forming a mask layer over the top surface of the substrate; forming an opening in the mask layer; etching the substrate through the opening in the mask layer to form an annular trench in the substrate, a bottom of the annular trench being located in or below the floor isolation region; and filling the annular trench with a dielectric material so as to form an isolated pocket of the substrate.
49. The method of Claim 48 further comprising: forming a second mask layer over the top surface of the substrate; forming an opening in the second mask layer over the isolated pocket; etching the substrate through the opening in the second mask layer to form a second trench in the substrate, a floor of the second trench being located above the floor isolation region; and filling the second trench with a dielectric material. 54
50. The method of Claim 48 further comprising: implanting a dopant of a second conductivity type opposite to the first conductivity type to form a second floor isolation region, the dopant being implanted with sufficient energy such that an upper junction of the second floor isolation region is located below the top surface of the substrate; forming a second opening in the mask layer; etching the substrate through the second opening in the mask layer to form a second annular trench in the substrate, a bottom of the second annular trench being located in or below the second floor isolation region; and filling the second annular trench with a dielectric material so as to form a second isolated pocket of the substrate.
51. The method of Claim 50 further comprising implanting a dopant of the first conductivity type into the substrate so as to form a region of the first conductivity type between the first and second floor isolation regions.
52. The method of Claim 50 further comprising: forming a second mask layer on the surface of the substrate; forming an opening in the second mask layer; etching the substrate through the opening in the second mask layer to form a third trench in the substrate, the third trench being located between the first and second annular trenches and having a bottom below the first and second floor isolation regions; and filling the third trench with a dielectric material.
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