WO2007143072A3 - Wet etch suitable for creating square cuts in si and resulting structures - Google Patents

Wet etch suitable for creating square cuts in si and resulting structures Download PDF

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Publication number
WO2007143072A3
WO2007143072A3 PCT/US2007/012904 US2007012904W WO2007143072A3 WO 2007143072 A3 WO2007143072 A3 WO 2007143072A3 US 2007012904 W US2007012904 W US 2007012904W WO 2007143072 A3 WO2007143072 A3 WO 2007143072A3
Authority
WO
WIPO (PCT)
Prior art keywords
wet etch
resulting structures
square cuts
etch suitable
creating square
Prior art date
Application number
PCT/US2007/012904
Other languages
French (fr)
Other versions
WO2007143072B1 (en
WO2007143072A2 (en
Inventor
Whonchee Lee
Janos Fucsko
David H Wells
Original Assignee
Micron Technology Inc
Whonchee Lee
Janos Fucsko
David H Wells
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc, Whonchee Lee, Janos Fucsko, David H Wells filed Critical Micron Technology Inc
Priority to JP2009513289A priority Critical patent/JP5278768B2/en
Priority to EP07795580A priority patent/EP2030225A2/en
Publication of WO2007143072A2 publication Critical patent/WO2007143072A2/en
Publication of WO2007143072A3 publication Critical patent/WO2007143072A3/en
Publication of WO2007143072B1 publication Critical patent/WO2007143072B1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
    • B81C1/00555—Achieving a desired geometry, i.e. controlling etch rates, anisotropy or selectivity
    • B81C1/00626—Processes for achieving a desired geometry not provided for in groups B81C1/00563 - B81C1/00619
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/08—Etching
    • C30B33/10—Etching in solutions or melts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H01L21/30608—Anisotropic liquid etching
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00—Basic microelectromechanical structures
    • B81B2203/03—Static structures
    • B81B2203/0323—Grooves
    • B81B2203/033—Trenches
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00—Basic microelectromechanical structures
    • B81B2203/03—Static structures
    • B81B2203/0323—Grooves
    • B81B2203/0338—Channels

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Materials Engineering (AREA)
  • Geometry (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Weting (AREA)
  • Element Separation (AREA)
  • Semiconductor Memories (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

A single crystal silicon etching method includes providing a single crystal silicon substrate having at least one trench therein. The substrate is exposed to a buffered fluoride etch solution which undercuts the silicon to provide lateral shelves when patterned in the <100> direction. The resulting structure includes an undercut feature when patterned in the <100> direction.
PCT/US2007/012904 2006-06-02 2007-05-31 Wet etch suitable for creating square cuts in si and resulting structures WO2007143072A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2009513289A JP5278768B2 (en) 2006-06-02 2007-05-31 Method for making a right angle undercut in single crystal silicon
EP07795580A EP2030225A2 (en) 2006-06-02 2007-05-31 Wet etch suitable for creating square cuts in si and resulting structures

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/445,718 2006-06-02
US11/445,718 US7628932B2 (en) 2006-06-02 2006-06-02 Wet etch suitable for creating square cuts in si

Publications (3)

Publication Number Publication Date
WO2007143072A2 WO2007143072A2 (en) 2007-12-13
WO2007143072A3 true WO2007143072A3 (en) 2008-02-14
WO2007143072B1 WO2007143072B1 (en) 2008-04-10

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2007/012904 WO2007143072A2 (en) 2006-06-02 2007-05-31 Wet etch suitable for creating square cuts in si and resulting structures

Country Status (7)

Country Link
US (4) US7628932B2 (en)
EP (1) EP2030225A2 (en)
JP (1) JP5278768B2 (en)
KR (1) KR101072760B1 (en)
CN (2) CN101461040A (en)
TW (1) TWI356451B (en)
WO (1) WO2007143072A2 (en)

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JP2009540539A (en) 2009-11-19
US20120322263A1 (en) 2012-12-20
KR20090015133A (en) 2009-02-11
US20070278183A1 (en) 2007-12-06
US7973388B2 (en) 2011-07-05
CN101461040A (en) 2009-06-17
WO2007143072B1 (en) 2008-04-10
TWI356451B (en) 2012-01-11
JP5278768B2 (en) 2013-09-04
TW200809952A (en) 2008-02-16
US20110260298A1 (en) 2011-10-27
CN103956321A (en) 2014-07-30
US8294246B2 (en) 2012-10-23
WO2007143072A2 (en) 2007-12-13
US20100013061A1 (en) 2010-01-21
EP2030225A2 (en) 2009-03-04
US7628932B2 (en) 2009-12-08
KR101072760B1 (en) 2011-10-11
US8450214B2 (en) 2013-05-28

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