WO2007146077A3 - Multi-layer chalcogenide devices - Google Patents

Multi-layer chalcogenide devices Download PDF

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Publication number
WO2007146077A3
WO2007146077A3 PCT/US2007/013440 US2007013440W WO2007146077A3 WO 2007146077 A3 WO2007146077 A3 WO 2007146077A3 US 2007013440 W US2007013440 W US 2007013440W WO 2007146077 A3 WO2007146077 A3 WO 2007146077A3
Authority
WO
WIPO (PCT)
Prior art keywords
layer
region includes
chalcogenide
resistances
active region
Prior art date
Application number
PCT/US2007/013440
Other languages
French (fr)
Other versions
WO2007146077A2 (en
Inventor
Regino Sandoval
Sergey A Kostylev
Wolodymyr Czubatyj
Tyler Lowrey
Original Assignee
Ovonyx Inc
Regino Sandoval
Sergey A Kostylev
Wolodymyr Czubatyj
Tyler Lowrey
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ovonyx Inc, Regino Sandoval, Sergey A Kostylev, Wolodymyr Czubatyj, Tyler Lowrey filed Critical Ovonyx Inc
Priority to CN200780029530.7A priority Critical patent/CN101506984B/en
Publication of WO2007146077A2 publication Critical patent/WO2007146077A2/en
Publication of WO2007146077A3 publication Critical patent/WO2007146077A3/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/021—Formation of the switching material, e.g. layer deposition
    • H10N70/026—Formation of the switching material, e.g. layer deposition by physical vapor deposition, e.g. sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828—Tellurides, e.g. GeSbTe

Abstract

A multi-layer chalcogenide electronic device. The device includes an active region in electrical communication with two terminals, where the active region includes two or more layers. In one embodiment, the pore region includes two or more chalcogenide materials which differ in chemical composition. In another embodiment, the pore region includes one or more chalcogenide materials and a layer of Sb. The devices offer the advantages of minimal conditioning requirements fast set speeds, high reset resistances and low set resistances.
PCT/US2007/013440 2006-06-13 2007-06-07 Multi-layer chalcogenide devices WO2007146077A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN200780029530.7A CN101506984B (en) 2006-06-13 2007-06-07 Multi-layer chalcogenide devices

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/451,913 US7767992B2 (en) 2005-08-09 2006-06-13 Multi-layer chalcogenide devices
US11/451,913 2006-06-13

Publications (2)

Publication Number Publication Date
WO2007146077A2 WO2007146077A2 (en) 2007-12-21
WO2007146077A3 true WO2007146077A3 (en) 2008-08-07

Family

ID=38832383

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2007/013440 WO2007146077A2 (en) 2006-06-13 2007-06-07 Multi-layer chalcogenide devices

Country Status (4)

Country Link
US (2) US7767992B2 (en)
CN (1) CN101506984B (en)
TW (1) TWI425635B (en)
WO (1) WO2007146077A2 (en)

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US7935951B2 (en) 1996-10-28 2011-05-03 Ovonyx, Inc. Composite chalcogenide materials and devices
US7989793B2 (en) * 2007-12-10 2011-08-02 Electronics And Telecommunications Research Institute Electrical device using phase change material, phase change memory device using solid state reaction and method for fabricating the same
KR100990215B1 (en) * 2008-07-17 2010-10-29 한국전자통신연구원 Phase Change Type Memory and Method for Fabricating the Same
US8012790B2 (en) * 2009-08-28 2011-09-06 International Business Machines Corporation Chemical mechanical polishing stop layer for fully amorphous phase change memory pore cell
US8283650B2 (en) 2009-08-28 2012-10-09 International Business Machines Corporation Flat lower bottom electrode for phase change memory cell
US8283202B2 (en) 2009-08-28 2012-10-09 International Business Machines Corporation Single mask adder phase change memory element
US8233317B2 (en) * 2009-11-16 2012-07-31 International Business Machines Corporation Phase change memory device suitable for high temperature operation
US8129268B2 (en) 2009-11-16 2012-03-06 International Business Machines Corporation Self-aligned lower bottom electrode
US7943420B1 (en) * 2009-11-25 2011-05-17 International Business Machines Corporation Single mask adder phase change memory element
KR20140054975A (en) * 2012-10-30 2014-05-09 에스케이하이닉스 주식회사 Variable resistance memory device
WO2016158429A1 (en) 2015-03-31 2016-10-06 ソニーセミコンダクタソリューションズ株式会社 Switch element and storage device
JP2017224688A (en) 2016-06-14 2017-12-21 ソニー株式会社 Circuit element, storage device, electronic apparatus, information writing method for circuit element, and information reading method from circuit element
US9793323B1 (en) * 2016-07-11 2017-10-17 Macronix International Co., Ltd. Phase change memory with high endurance
KR102389106B1 (en) * 2016-10-04 2022-04-21 소니 세미컨덕터 솔루션즈 가부시키가이샤 Switch elements and storage devices, and memory systems
FR3092200B1 (en) * 2019-01-28 2021-10-22 Commissariat Energie Atomique PHASE RESISTIVE MEMORY

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US20030071289A1 (en) * 2001-08-31 2003-04-17 Hudgens Stephen J. Multiple layer phase-change memory

Also Published As

Publication number Publication date
CN101506984A (en) 2009-08-12
US8000125B2 (en) 2011-08-16
TWI425635B (en) 2014-02-01
TW200816471A (en) 2008-04-01
US20070034849A1 (en) 2007-02-15
US7767992B2 (en) 2010-08-03
US20080273372A1 (en) 2008-11-06
WO2007146077A2 (en) 2007-12-21
CN101506984B (en) 2011-07-06

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