WO2008002811B1 - Pad cleaning method - Google Patents

Pad cleaning method

Info

Publication number
WO2008002811B1
WO2008002811B1 PCT/US2007/071701 US2007071701W WO2008002811B1 WO 2008002811 B1 WO2008002811 B1 WO 2008002811B1 US 2007071701 W US2007071701 W US 2007071701W WO 2008002811 B1 WO2008002811 B1 WO 2008002811B1
Authority
WO
WIPO (PCT)
Prior art keywords
polishing pad
pad
spraying
polishing
fluid
Prior art date
Application number
PCT/US2007/071701
Other languages
French (fr)
Other versions
WO2008002811A3 (en
WO2008002811A2 (en
Inventor
Rashid A Mavliev
Hung Chih Chen
Original Assignee
Applied Materials Inc
Rashid A Mavliev
Hung Chih Chen
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc, Rashid A Mavliev, Hung Chih Chen filed Critical Applied Materials Inc
Priority to JP2009518460A priority Critical patent/JP5020317B2/en
Publication of WO2008002811A2 publication Critical patent/WO2008002811A2/en
Publication of WO2008002811A3 publication Critical patent/WO2008002811A3/en
Publication of WO2008002811B1 publication Critical patent/WO2008002811B1/en

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
    • B24B53/017—Devices or means for dressing, cleaning or otherwise conditioning lapping tools

Abstract

A method for cleaning a polishing pad is disclosed. In CMP and ECMP, a polishing pad must be conditioned to obtain good and predictable polishing results. During conditioning, debris is generated that must be removed to prevent processing defects. An effective method to clean a polishing pad is disclosed herein. In one embodiment, a washing fluid is directed at the pad to clean debris from the while a second fluid is utilized to remove the washing fluid. In another embodiment, the washing fluid is provided by a high pressure water jet while the second fluid is provided by an air knife.

Claims

AMENDED CLAIMS received by the International Bureau on 15 October 2008 (15.10.08), new claims 1-24Claims:
1. A method for cleaning a polishing pad, sequentially comprising: directing polishing fluid from the polishing pad with an upstream director; spraying a washing fluid on the polishing pad; and directing the washing fluid off the pad with a downstream director.
2. The method as claimed in claim 1 , wherein said directing further comprises directing air to the pad through an air knife.
3. The method as claimed in claim 2, wherein said air and said washing fluid are introduced to the polishing pad simultaneously.
4. The method as claimed in claim 2, wherein spraying further comprises moving a positioning of a nozzle delivering said washing fluid to said pad while
spraying.
5. The method as claimed in claim 1 , further comprising conditioning said polishing pad with a diamond disk.
6. The method as claimed in claim 1 , further comprising rotating said polishing pad during said spraying.
7. The method as claimed in claim 1 , wherein said washing fluid is deionized water supplied at a pressure of about 1500 psi to about 2000 psi.
8. The method as claimed in claim 1 , wherein said polishing pad is a chemical mechanical polishing pad.
9. The method as claimed in claim 1, wherein said polishing pad is an electrochemical mechanical polishing pad.
10. The method as claimed in claim 1 , wherein said directing further comprises vacuuming fluid from the pad through the downstream director.
11. The method as claimed in claim 1 , further comprising rotating said polishing pad at about 10 to about 100 RPM during spraying.
12. The method as claimed in claim 1 , wherein directing said washing fluid further comprises creating a fluid barrier between said washing fluid disposed in the polishing pad and a substrate pressed against said polishing pad.
13. The method as in claim 1 , wherein said spraying further comprises spraying said polishing pad during a break-in procedure.
18
14. The method as in claim 1 , wherein said spraying further comprises spraying said polishing pad during polishing a substrate.
15. The method as in claim 1 , wherein said spraying further comprises spraying said polishing pad after polishing a substrate.
16. The method as claimed in claim 1 , wherein said directing further comprises wiping fluid from said pad using said downstream director.
17. A method for cleaning a polishing pad, sequentially comprising: directing polishing fluid off of said polishing pad with an upstream director; and spraying said polishing pad with a washing fluid.
18. The method as claimed in claim 19, wherein said spraying further comprises: spraying said pad with a water jet.
19. The method as claimed in claim 19, wherein said directing further comprises: directing polishing fluid off of said pad with at least one of a gas stream or spray, a vacuum or wiper.
19
20. The method as claimed in claim 19 further comprising: directing washing fluid off of said pad with an downstream director; and dispensing polishing fluid to said pad downstream of said downstream director.
21. An apparatus for cleaning a polishing pad comprising: a rotatable platen; a polishing pad disposed on the platen; an upstream director for directing polishing fluid off of the polishing pad; an air jet mounted on a first delivery arm pivotable over said polishing pad, the air jet separate from the upstream director; and a water jet mounted on a second delivery arm positioned over said polishing pad.
22. The apparatus as claimed in claim 23, wherein said air jet comprises an air knife.
23. The apparatus as claimed in claim 23, wherein said polishing pad is a chemical mechanical polishing pad.
24. The apparatus as claimed in claim 23, wherein said polishing pad is an electrochemical mechanical polishing pad.
20
PCT/US2007/071701 2006-06-27 2007-06-20 Pad cleaning method WO2008002811A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009518460A JP5020317B2 (en) 2006-06-27 2007-06-20 Pad cleaning method

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/475,639 US7452264B2 (en) 2006-06-27 2006-06-27 Pad cleaning method
US11/475,639 2006-06-27

Publications (3)

Publication Number Publication Date
WO2008002811A2 WO2008002811A2 (en) 2008-01-03
WO2008002811A3 WO2008002811A3 (en) 2008-11-06
WO2008002811B1 true WO2008002811B1 (en) 2008-12-24

Family

ID=38846417

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2007/071701 WO2008002811A2 (en) 2006-06-27 2007-06-20 Pad cleaning method

Country Status (4)

Country Link
US (1) US7452264B2 (en)
JP (1) JP5020317B2 (en)
TW (1) TWI354584B (en)
WO (1) WO2008002811A2 (en)

Families Citing this family (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8545634B2 (en) * 2005-10-19 2013-10-01 Freescale Semiconductor, Inc. System and method for cleaning a conditioning device
US7883393B2 (en) * 2005-11-08 2011-02-08 Freescale Semiconductor, Inc. System and method for removing particles from a polishing pad
US8012000B2 (en) * 2007-04-02 2011-09-06 Applied Materials, Inc. Extended pad life for ECMP and barrier removal
US7674156B2 (en) * 2007-10-08 2010-03-09 K.C. Tech Co., Ltd Cleaning device for chemical mechanical polishing equipment
DE102008016463A1 (en) * 2008-03-31 2009-10-01 Texas Instruments Deutschland Gmbh Method for planarizing a semiconductor structure
US8337279B2 (en) * 2008-06-23 2012-12-25 Applied Materials, Inc. Closed-loop control for effective pad conditioning
US8172641B2 (en) * 2008-07-17 2012-05-08 Taiwan Semiconductor Manufacturing Co., Ltd. CMP by controlling polish temperature
US20100291841A1 (en) * 2009-05-14 2010-11-18 Chien-Min Sung Methods and Systems for Water Jet Assisted CMP Processing
KR101170760B1 (en) * 2009-07-24 2012-08-03 세메스 주식회사 Substrate polishing apparatus
JP2011079076A (en) * 2009-10-05 2011-04-21 Toshiba Corp Polishing device and polishing method
CN102528651B (en) * 2010-12-21 2014-10-22 中国科学院微电子研究所 Chemical mechanical polishing equipment and preheating method for same
JP5628067B2 (en) * 2011-02-25 2014-11-19 株式会社荏原製作所 Polishing apparatus provided with temperature adjustment mechanism of polishing pad
US20120289131A1 (en) * 2011-05-13 2012-11-15 Li-Chung Liu Cmp apparatus and method
US8920214B2 (en) * 2011-07-12 2014-12-30 Chien-Min Sung Dual dressing system for CMP pads and associated methods
KR101219547B1 (en) 2011-08-18 2013-01-16 주식회사 케이씨텍 Chemical mechanical polishing apparatus and control method thereof
KR20140116542A (en) * 2012-01-24 2014-10-02 어플라이드 머티어리얼스, 인코포레이티드 Cleaning module and process for particle reduction
US9138861B2 (en) * 2012-02-15 2015-09-22 Taiwan Semiconductor Manufacturing Co., Ltd. CMP pad cleaning apparatus
JP6209088B2 (en) * 2013-01-25 2017-10-04 株式会社荏原製作所 Polishing method and apparatus
WO2014149676A1 (en) * 2013-03-15 2014-09-25 Applied Materials, Inc. Polishing pad cleaning with vacuum apparatus
US10293462B2 (en) * 2013-07-23 2019-05-21 Taiwan Semiconductor Manufacturing Company, Ltd. Pad conditioner and method of reconditioning planarization pad
US9833876B2 (en) * 2014-03-03 2017-12-05 Taiwan Semiconductor Manufacturing Co., Ltd. Polishing apparatus and polishing method
KR101597457B1 (en) * 2014-09-26 2016-02-24 현대제철 주식회사 Cleaning apparatus of polishing pad
CN105234823B (en) * 2015-10-27 2017-09-29 上海华力微电子有限公司 Lapping liquid is supplied and grinding pad collating unit, grinder station
KR102559647B1 (en) * 2016-08-12 2023-07-25 삼성디스플레이 주식회사 Substrate polishing system and substrate polishing method
CN108284383B (en) * 2017-01-09 2021-02-26 中芯国际集成电路制造(上海)有限公司 Chemical mechanical polishing device and chemical mechanical polishing method
CN110352115A (en) * 2017-03-06 2019-10-18 应用材料公司 It is mobile for the spiral and concentric circles of the position CMP particular abrasive (LSP) design
US10593603B2 (en) 2018-03-16 2020-03-17 Sandisk Technologies Llc Chemical mechanical polishing apparatus containing hydraulic multi-chamber bladder and method of using thereof
JP7162465B2 (en) 2018-08-06 2022-10-28 株式会社荏原製作所 Polishing device and polishing method
JP7083722B2 (en) * 2018-08-06 2022-06-13 株式会社荏原製作所 Polishing equipment and polishing method
US11717936B2 (en) * 2018-09-14 2023-08-08 Applied Materials, Inc. Methods for a web-based CMP system
CN109333337A (en) * 2018-11-19 2019-02-15 深圳市华星光电技术有限公司 Grinding device and grinding method
US20220193863A1 (en) * 2019-04-04 2022-06-23 Applied Materials, Inc. Polishing fluid collection apparatus and methods related thereto
US11712778B2 (en) * 2019-08-23 2023-08-01 Taiwan Semiconductor Manufacturing Company, Ltd. Chemical mechanical planarization tool
US11794305B2 (en) 2020-09-28 2023-10-24 Applied Materials, Inc. Platen surface modification and high-performance pad conditioning to improve CMP performance
KR20220073192A (en) 2020-11-26 2022-06-03 에스케이실트론 주식회사 Apparatus of cleaning a polishing pad and polishing device

Family Cites Families (49)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3128880A1 (en) 1981-07-22 1983-02-10 Fa. Peter Wolters, 2370 Rendsburg MACHINE FOR LAPPING OR POLISHING
US4450652A (en) 1981-09-04 1984-05-29 Monsanto Company Temperature control for wafer polishing
US4515313A (en) 1982-12-27 1985-05-07 Marshall And Williams Company Air knife apparatus
US6146851A (en) * 1985-02-05 2000-11-14 Chiron Corporation DNA encoding NV2 (long form) and carboxy truncated fragments thereof
JPH0760812B2 (en) * 1991-06-26 1995-06-28 インターナショナル・ビジネス・マシーンズ・コーポレイション Semiconductor wafer polishing apparatus and polishing method
US5308438A (en) * 1992-01-30 1994-05-03 International Business Machines Corporation Endpoint detection apparatus and method for chemical/mechanical polishing
US5607718A (en) 1993-03-26 1997-03-04 Kabushiki Kaisha Toshiba Polishing method and polishing apparatus
US5700180A (en) 1993-08-25 1997-12-23 Micron Technology, Inc. System for real-time control of semiconductor wafer polishing
SE9402091D0 (en) * 1994-06-14 1994-06-14 Pharmacia Biotech Ab chromatography column
JP3633062B2 (en) 1994-12-22 2005-03-30 株式会社デンソー Polishing method and polishing apparatus
JP2581478B2 (en) * 1995-01-13 1997-02-12 日本電気株式会社 Flat polishing machine
JP3594357B2 (en) * 1995-04-10 2004-11-24 株式会社荏原製作所 Polishing method and apparatus
US5533923A (en) 1995-04-10 1996-07-09 Applied Materials, Inc. Chemical-mechanical polishing pad providing polishing unformity
KR100281723B1 (en) 1995-05-30 2001-10-22 코트게리 Polishing method and device
JP2833552B2 (en) * 1995-10-19 1998-12-09 日本電気株式会社 Wafer polishing method and polishing apparatus
US5709593A (en) 1995-10-27 1998-01-20 Applied Materials, Inc. Apparatus and method for distribution of slurry in a chemical mechanical polishing system
US5643050A (en) 1996-05-23 1997-07-01 Industrial Technology Research Institute Chemical/mechanical polish (CMP) thickness monitor
US6165053A (en) 1996-07-24 2000-12-26 Mayekawa Mfg. Co., Ltd. Method and apparatus for processing in cold air blast
US6475253B2 (en) 1996-09-11 2002-11-05 3M Innovative Properties Company Abrasive article and method of making
JP3672685B2 (en) 1996-11-29 2005-07-20 松下電器産業株式会社 Polishing method and polishing apparatus
US6065794A (en) * 1997-02-14 2000-05-23 Schlachter; Bradley S. Security enclosure for open deck vehicles
US5993298A (en) * 1997-03-06 1999-11-30 Keltech Engineering Lapping apparatus and process with controlled liquid flow across the lapping surface
US6139406A (en) 1997-06-24 2000-10-31 Applied Materials, Inc. Combined slurry dispenser and rinse arm and method of operation
US5916010A (en) * 1997-10-30 1999-06-29 International Business Machines Corporation CMP pad maintenance apparatus and method
US5957750A (en) 1997-12-18 1999-09-28 Micron Technology, Inc. Method and apparatus for controlling a temperature of a polishing pad used in planarizing substrates
US6000997A (en) 1998-07-10 1999-12-14 Aplex, Inc. Temperature regulation in a CMP process
US6250994B1 (en) 1998-10-01 2001-06-26 Micron Technology, Inc. Methods and apparatuses for mechanical and chemical-mechanical planarization of microelectronic-device substrate assemblies on planarizing pads
US6358124B1 (en) 1998-11-02 2002-03-19 Applied Materials, Inc. Pad conditioner cleaning apparatus
US6319098B1 (en) 1998-11-13 2001-11-20 Applied Materials, Inc. Method of post CMP defect stability improvement
US6217422B1 (en) 1999-01-20 2001-04-17 International Business Machines Corporation Light energy cleaning of polishing pads
JP2000216120A (en) * 1999-01-27 2000-08-04 Mitsubishi Electric Corp Polisher and manufacturing semiconductor device using the same
US6056794A (en) 1999-03-05 2000-05-02 3M Innovative Properties Company Abrasive articles having bonding systems containing abrasive particles
US6077151A (en) 1999-05-17 2000-06-20 Vlsi Technology, Inc. Temperature control carrier head for chemical mechanical polishing process
US20020068516A1 (en) 1999-12-13 2002-06-06 Applied Materials, Inc Apparatus and method for controlled delivery of slurry to a region of a polishing device
US6660326B2 (en) 2000-08-04 2003-12-09 Tomoegawa Paper Co. Ltd. Production method for monolayer powder film and production apparatus therefor
GB0031756D0 (en) 2000-12-29 2001-02-07 Lucas Western Inc Conveyor roller assembly
US6899804B2 (en) 2001-12-21 2005-05-31 Applied Materials, Inc. Electrolyte composition and treatment for electrolytic chemical mechanical polishing
US6582487B2 (en) 2001-03-20 2003-06-24 3M Innovative Properties Company Discrete particles that include a polymeric material and articles formed therefrom
US20030036273A1 (en) 2001-08-14 2003-02-20 Applied Materials, Inc. Shield for capturing fluid displaced from a substrate
US6887132B2 (en) * 2001-09-10 2005-05-03 Multi Planar Technologies Incorporated Slurry distributor for chemical mechanical polishing apparatus and method of using the same
US6899784B1 (en) 2002-06-27 2005-05-31 International Business Machines Corporation Apparatus for detecting CMP endpoint in acidic slurries
US6878629B1 (en) 2002-06-27 2005-04-12 International Business Machines Corporation Method for detecting CMP endpoint in acidic slurries
US6752858B1 (en) 2002-12-13 2004-06-22 Kerr-Mcgee Chemical, Llc Circumferential air knife and applications
US6910951B2 (en) 2003-02-24 2005-06-28 Dow Global Technologies, Inc. Materials and methods for chemical-mechanical planarization
US6913518B2 (en) 2003-05-06 2005-07-05 Applied Materials, Inc. Profile control platen
US6918821B2 (en) 2003-11-12 2005-07-19 Dow Global Technologies, Inc. Materials and methods for low pressure chemical-mechanical planarization
US20050126708A1 (en) 2003-12-10 2005-06-16 Applied Materials, Inc. Retaining ring with slurry transport grooves
US7520968B2 (en) 2004-10-05 2009-04-21 Applied Materials, Inc. Conductive pad design modification for better wafer-pad contact
JP2006159317A (en) * 2004-12-03 2006-06-22 Asahi Sunac Corp Dressing method of grinding pad

Also Published As

Publication number Publication date
JP5020317B2 (en) 2012-09-05
TWI354584B (en) 2011-12-21
US20070298692A1 (en) 2007-12-27
TW200817103A (en) 2008-04-16
WO2008002811A3 (en) 2008-11-06
JP2009542450A (en) 2009-12-03
US7452264B2 (en) 2008-11-18
WO2008002811A2 (en) 2008-01-03

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