WO2008020976A3 - Bias circuit for maintaining high linearity at cutback power conditions - Google Patents

Bias circuit for maintaining high linearity at cutback power conditions Download PDF

Info

Publication number
WO2008020976A3
WO2008020976A3 PCT/US2007/016851 US2007016851W WO2008020976A3 WO 2008020976 A3 WO2008020976 A3 WO 2008020976A3 US 2007016851 W US2007016851 W US 2007016851W WO 2008020976 A3 WO2008020976 A3 WO 2008020976A3
Authority
WO
WIPO (PCT)
Prior art keywords
sections
enabled
biased
section
cutback
Prior art date
Application number
PCT/US2007/016851
Other languages
French (fr)
Other versions
WO2008020976A2 (en
Inventor
Philip Howard Thompson
Original Assignee
Skyworks Solutions Inc
Philip Howard Thompson
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Skyworks Solutions Inc, Philip Howard Thompson filed Critical Skyworks Solutions Inc
Publication of WO2008020976A2 publication Critical patent/WO2008020976A2/en
Publication of WO2008020976A3 publication Critical patent/WO2008020976A3/en

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/68—Combinations of amplifiers, e.g. multi-channel amplifiers for stereophonics
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High frequency amplifiers, e.g. radio frequency amplifiers

Abstract

To improve operation during cutback power mode by reducing gain expansion, sections of a multi-section amplifier are selectively biased. During cutback power condition, fewer than all sections of the multi-section amplifier are biased. Selective biasing reduces power consumption and obtains desired output power. To reduce gain expansion, a bias resistor is provided between one or more sections to establish a small or leakage bias current into non-enabled or non-biased sections. This leakage bias current weakly biases the non-enabled sections allowing small signal amplification by the non-enabled sections. The combined amplification of the enabled section and the weakly biased section provide greater initial gain at lower power input signal levels thereby reducing gain expansion.
PCT/US2007/016851 2006-08-08 2007-07-26 Bias circuit for maintaining high linearity at cutback power conditions WO2008020976A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/501,378 US7471154B2 (en) 2006-08-08 2006-08-08 Bias circuit for maintaining high linearity at cutback power conditions
US11/501,378 2006-08-08

Publications (2)

Publication Number Publication Date
WO2008020976A2 WO2008020976A2 (en) 2008-02-21
WO2008020976A3 true WO2008020976A3 (en) 2008-12-24

Family

ID=39050151

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2007/016851 WO2008020976A2 (en) 2006-08-08 2007-07-26 Bias circuit for maintaining high linearity at cutback power conditions

Country Status (2)

Country Link
US (1) US7471154B2 (en)
WO (1) WO2008020976A2 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1564898A1 (en) * 2004-02-13 2005-08-17 Thomson Licensing S.A. Radio transmitter with reduced power consumption
US8391812B2 (en) 2009-08-27 2013-03-05 Sige Semiconductor, Inc. Method and system for amplifier control
WO2012083256A2 (en) * 2010-12-17 2012-06-21 Skyworks Solutions, Inc. Apparatus and methods for oscillation suppression
KR102491944B1 (en) * 2017-12-27 2023-01-25 삼성전기주식회사 Power amplifier with asymmetric amplification structure for improving linearity

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Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4430732A (en) * 1980-01-23 1984-02-07 Nippon Electric Co., Ltd. Switch matrix apparatus for satellite-switched TDMA system or the like
US6970040B1 (en) * 2003-11-13 2005-11-29 Rf Micro Devices, Inc. Multi-mode/multi-band power amplifier
US7295065B2 (en) * 2004-11-18 2007-11-13 Beecem Communications Inc. High efficiency doherty amplifier with a segmented main amplifier

Also Published As

Publication number Publication date
WO2008020976A2 (en) 2008-02-21
US7471154B2 (en) 2008-12-30
US20080036541A1 (en) 2008-02-14

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