WO2008036423A3 - Formulations for voltage switchable dielectric material having a stepped voltage response and methods for making the same - Google Patents
Formulations for voltage switchable dielectric material having a stepped voltage response and methods for making the same Download PDFInfo
- Publication number
- WO2008036423A3 WO2008036423A3 PCT/US2007/020682 US2007020682W WO2008036423A3 WO 2008036423 A3 WO2008036423 A3 WO 2008036423A3 US 2007020682 W US2007020682 W US 2007020682W WO 2008036423 A3 WO2008036423 A3 WO 2008036423A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- formulations
- voltage
- switchable dielectric
- materials
- dielectric material
- Prior art date
Links
- 238000009472 formulation Methods 0.000 title abstract 4
- 239000000203 mixture Substances 0.000 title abstract 4
- 239000003989 dielectric material Substances 0.000 title abstract 3
- 238000000034 method Methods 0.000 title 1
- 239000000463 material Substances 0.000 abstract 4
- 239000011159 matrix material Substances 0.000 abstract 2
- 239000004020 conductor Substances 0.000 abstract 1
- 239000010954 inorganic particle Substances 0.000 abstract 1
- 239000011368 organic material Substances 0.000 abstract 1
- 239000011146 organic particle Substances 0.000 abstract 1
- 239000002245 particle Substances 0.000 abstract 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/14—Conductive material dispersed in non-conductive inorganic material
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
- H01C7/12—Overvoltage protection resistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/312—Organic layers, e.g. photoresist
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02167—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon carbide not containing oxygen, e.g. SiC, SiC:H or silicon carbonitrides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/3148—Silicon Carbide layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/318—Inorganic layers composed of nitrides
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/90—Bulk effect device making
Abstract
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP07838813A EP2084748A4 (en) | 2006-09-24 | 2007-09-24 | Formulations for voltage switchable dielectric material having a stepped voltage response and methods for making the same |
JP2009529274A JP2010521058A (en) | 2006-09-24 | 2007-09-24 | Composition of voltage-switchable dielectric material having step voltage response and method of manufacturing the dielectric material |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US82674706P | 2006-09-24 | 2006-09-24 | |
US60/826,747 | 2006-09-24 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2008036423A2 WO2008036423A2 (en) | 2008-03-27 |
WO2008036423A3 true WO2008036423A3 (en) | 2008-07-31 |
Family
ID=39201127
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2007/020682 WO2008036423A2 (en) | 2006-09-24 | 2007-09-24 | Formulations for voltage switchable dielectric material having a stepped voltage response and methods for making the same |
Country Status (7)
Country | Link |
---|---|
US (3) | US7872251B2 (en) |
EP (1) | EP2084748A4 (en) |
JP (1) | JP2010521058A (en) |
KR (1) | KR20090055017A (en) |
CN (1) | CN101536190A (en) |
MY (1) | MY145875A (en) |
WO (1) | WO2008036423A2 (en) |
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WO2001017320A1 (en) | 1999-08-27 | 2001-03-08 | Lex Kosowsky | Current carrying structure using voltage switchable dielectric material |
US20100038119A1 (en) * | 1999-08-27 | 2010-02-18 | Lex Kosowsky | Metal Deposition |
US20100044080A1 (en) * | 1999-08-27 | 2010-02-25 | Lex Kosowsky | Metal Deposition |
US20100038121A1 (en) * | 1999-08-27 | 2010-02-18 | Lex Kosowsky | Metal Deposition |
EP1969627A4 (en) | 2005-11-22 | 2010-01-20 | Shocking Technologies Inc | Semiconductor devices including voltage switchable materials for over-voltage protection |
US20080032049A1 (en) * | 2006-07-29 | 2008-02-07 | Lex Kosowsky | Voltage switchable dielectric material having high aspect ratio particles |
US7968014B2 (en) | 2006-07-29 | 2011-06-28 | Shocking Technologies, Inc. | Device applications for voltage switchable dielectric material having high aspect ratio particles |
WO2008036423A2 (en) * | 2006-09-24 | 2008-03-27 | Shocking Technologies, Inc. | Formulations for voltage switchable dielectric material having a stepped voltage response and methods for making the same |
US20120119168A9 (en) * | 2006-11-21 | 2012-05-17 | Robert Fleming | Voltage switchable dielectric materials with low band gap polymer binder or composite |
US20120212904A1 (en) * | 2008-02-12 | 2012-08-23 | Robert Fleming | Flexible circuits and substrates comprising voltage switchable dielectric material |
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US8633562B2 (en) * | 2011-04-01 | 2014-01-21 | Qualcomm Incorporated | Voltage switchable dielectric for die-level electrostatic discharge (ESD) protection |
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US8363365B2 (en) | 2008-06-17 | 2013-01-29 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US20100047535A1 (en) | 2008-08-22 | 2010-02-25 | Lex Kosowsky | Core layer structure having voltage switchable dielectric material |
US8399773B2 (en) | 2009-01-27 | 2013-03-19 | Shocking Technologies, Inc. | Substrates having voltage switchable dielectric materials |
KR101679099B1 (en) | 2009-03-26 | 2016-11-23 | 쇼킹 테크놀로지스 인코포레이티드 | Components having voltage switchable dielectric materials |
-
2007
- 2007-09-24 WO PCT/US2007/020682 patent/WO2008036423A2/en active Application Filing
- 2007-09-24 US US11/903,820 patent/US7872251B2/en not_active Expired - Fee Related
- 2007-09-24 KR KR1020097006066A patent/KR20090055017A/en not_active Application Discontinuation
- 2007-09-24 CN CNA200780035343XA patent/CN101536190A/en active Pending
- 2007-09-24 EP EP07838813A patent/EP2084748A4/en not_active Withdrawn
- 2007-09-24 JP JP2009529274A patent/JP2010521058A/en active Pending
- 2007-09-24 MY MYPI20091179A patent/MY145875A/en unknown
-
2010
- 2010-11-23 US US12/953,309 patent/US8163595B2/en not_active Expired - Fee Related
-
2012
- 2012-04-14 US US13/447,173 patent/US8723153B2/en not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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US6882051B2 (en) * | 2001-03-30 | 2005-04-19 | The Regents Of The University Of California | Nanowires, nanostructures and devices fabricated therefrom |
US20040095658A1 (en) * | 2002-09-05 | 2004-05-20 | Nanosys, Inc. | Nanocomposites |
US20060211837A1 (en) * | 2005-03-16 | 2006-09-21 | Lg Chem, Ltd. | Coating composition for dielectric insulating film, dielectric insulating film prepared therefrom, and electric or electronic device comprising the same |
Also Published As
Publication number | Publication date |
---|---|
CN101536190A (en) | 2009-09-16 |
US8163595B2 (en) | 2012-04-24 |
KR20090055017A (en) | 2009-06-01 |
WO2008036423A2 (en) | 2008-03-27 |
MY145875A (en) | 2012-05-15 |
US8723153B2 (en) | 2014-05-13 |
EP2084748A2 (en) | 2009-08-05 |
US7872251B2 (en) | 2011-01-18 |
EP2084748A4 (en) | 2011-09-28 |
US20110062388A1 (en) | 2011-03-17 |
US20120202930A1 (en) | 2012-08-09 |
US20100270588A1 (en) | 2010-10-28 |
JP2010521058A (en) | 2010-06-17 |
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