WO2008048597A3 - Crossbar-memory systems with nanowire crossbar junctions - Google Patents

Crossbar-memory systems with nanowire crossbar junctions Download PDF

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Publication number
WO2008048597A3
WO2008048597A3 PCT/US2007/022070 US2007022070W WO2008048597A3 WO 2008048597 A3 WO2008048597 A3 WO 2008048597A3 US 2007022070 W US2007022070 W US 2007022070W WO 2008048597 A3 WO2008048597 A3 WO 2008048597A3
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WO
WIPO (PCT)
Prior art keywords
layer
crossbar
nanowire
nanowires
microscale signal
Prior art date
Application number
PCT/US2007/022070
Other languages
French (fr)
Other versions
WO2008048597A2 (en
Inventor
Warren Robinett
Philip J Kuekes
Original Assignee
Hewlett Packard Development Co
Warren Robinett
Philip J Kuekes
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hewlett Packard Development Co, Warren Robinett, Philip J Kuekes filed Critical Hewlett Packard Development Co
Priority to DE602007005156T priority Critical patent/DE602007005156D1/en
Priority to KR1020097010048A priority patent/KR101395170B1/en
Priority to JP2009533343A priority patent/JP5086359B2/en
Priority to AT07852786T priority patent/ATE459963T1/en
Priority to EP07852786A priority patent/EP2074624B1/en
Priority to CN2007800384669A priority patent/CN101529523B/en
Publication of WO2008048597A2 publication Critical patent/WO2008048597A2/en
Publication of WO2008048597A3 publication Critical patent/WO2008048597A3/en

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/02—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00—Error detection; Error correction; Monitoring
    • G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
    • G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
    • G06F11/1008—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/54—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using elements simulating biological cells, e.g. neuron
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0023—Address circuits or decoders
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/004—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00—Error detection; Error correction; Monitoring
    • G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
    • G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
    • G06F11/1076—Parity data used in redundant arrays of independent storages, e.g. in RAID systems
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/004—Reading or sensing circuits or methods
    • G11C2013/0047—Read destroying or disturbing the data
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/004—Reading or sensing circuits or methods
    • G11C2013/0057—Read done in two steps, e.g. wherein the cell is read twice and one of the two read values serving as a reference value
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G11C2013/009—Write using potential difference applied between cell electrodes
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/10—Resistive cells; Technology aspects
    • G11C2213/16—Memory cell being a nanotube, e.g. suspended nanotube
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/77—Array wherein the memory element being directly connected to the bit lines and word lines without any access device being used
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/81—Array wherein the array conductors, e.g. word lines, bit lines, are made of nanowires

Abstract

Various embodiments of the present invention are directed to crossbar-memory systems to methods for writing information to and reading information stored in such systems. In one embodiment of the present invention, a crossbar-memory system (800) comprises a first layer of microscale signal lines (808), a second layer of microscale signal lines '(810), a first layer of nanowires (804) configured so that each first layer, nanowire overlaps each first layer microscale signal line (808), and a second layer of nanowires (806) configured so that each second layer nanowire overlaps each second layer microscale signal line (810) and overlaps each first layer nanowire (804). The crossbar-memory system includes nonlinear-tunneling resistors configured to selectively connect first layer nanowires (804) to first layer microscale signal lines (808) and to selectively connect second layer nanowires (806) to second layer microscale signal lines (810). The crossbar-memory system (800) also includes nonlinear tunneling-hysteretic resistors configured to connect each first layer nanowire to each second layer nanowire. at each crossbar intersection.
PCT/US2007/022070 2006-10-16 2007-10-16 Crossbar-memory systems with nanowire crossbar junctions WO2008048597A2 (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
DE602007005156T DE602007005156D1 (en) 2006-10-16 2007-10-16 CROSSBAR STORAGE SYSTEM WITH NANODRAHT CROSSBAR CONNECTIONS
KR1020097010048A KR101395170B1 (en) 2006-10-16 2007-10-16 Crossbar-memory systems with nanowire crossbar junctions
JP2009533343A JP5086359B2 (en) 2006-10-16 2007-10-16 Crossbar memory system and method for writing to and reading from a crossbar memory junction of a crossbar memory system
AT07852786T ATE459963T1 (en) 2006-10-16 2007-10-16 CROSS RAIL STORAGE SYSTEM WITH NANOWIRE CROSS RAIL CONNECTIONS
EP07852786A EP2074624B1 (en) 2006-10-16 2007-10-16 Crossbar-memory systems with nanowire crossbar junctions
CN2007800384669A CN101529523B (en) 2006-10-16 2007-10-16 Crossbar-memory systems with nanowire crossbar junctions

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/582,208 2006-10-16
US11/582,208 US7778061B2 (en) 2006-10-16 2006-10-16 Crossbar-memory systems and methods for writing to and reading from crossbar memory junctions of crossbar-memory systems

Publications (2)

Publication Number Publication Date
WO2008048597A2 WO2008048597A2 (en) 2008-04-24
WO2008048597A3 true WO2008048597A3 (en) 2008-06-19

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2007/022070 WO2008048597A2 (en) 2006-10-16 2007-10-16 Crossbar-memory systems with nanowire crossbar junctions

Country Status (9)

Country Link
US (1) US7778061B2 (en)
EP (1) EP2074624B1 (en)
JP (1) JP5086359B2 (en)
KR (1) KR101395170B1 (en)
CN (1) CN101529523B (en)
AT (1) ATE459963T1 (en)
DE (1) DE602007005156D1 (en)
TW (1) TWI364093B (en)
WO (1) WO2008048597A2 (en)

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