WO2008057179A3 - Atomic layer deposition in the formation of gate structures for iii-v semiconductor - Google Patents

Atomic layer deposition in the formation of gate structures for iii-v semiconductor Download PDF

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Publication number
WO2008057179A3
WO2008057179A3 PCT/US2007/022198 US2007022198W WO2008057179A3 WO 2008057179 A3 WO2008057179 A3 WO 2008057179A3 US 2007022198 W US2007022198 W US 2007022198W WO 2008057179 A3 WO2008057179 A3 WO 2008057179A3
Authority
WO
WIPO (PCT)
Prior art keywords
portions
dielectric film
disposed
semiconductor
atomic layer
Prior art date
Application number
PCT/US2007/022198
Other languages
French (fr)
Other versions
WO2008057179A2 (en
Inventor
Kamal Tabatabaie
Robert B Hallock
Original Assignee
Raytheon Co
Kamal Tabatabaie
Robert B Hallock
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Raytheon Co, Kamal Tabatabaie, Robert B Hallock filed Critical Raytheon Co
Publication of WO2008057179A2 publication Critical patent/WO2008057179A2/en
Publication of WO2008057179A3 publication Critical patent/WO2008057179A3/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28575—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
    • H01L21/28587—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds characterised by the sectional shape, e.g. T, inverted T
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
    • H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT

Abstract

A semiconductor structure having a recess (105) and a dielectric film(102) is disposed on and in contract with the semiconductor. The dielectric film has an aperture (104) therein. Portions of the dielectric film are disposed adjacent to the aperture and overhang underlying portions of the recess. An electric contact (108) has first portions (108a) thereof disposed on said adjacent portions of the dielectric film, second portions (108b) disposed on said underlying portions of the recess, with portions of the dielectric film being disposed between said first portion of the electric contact and the second portions of the electric contact, and third portions of the electric contact being disposed on and in contact with a bottom portion (109) of the recess in the semiconductor structure. The electric contact is formed by atomic layer deposition of an electrically conductive material over the dielectric film and through the aperture in such dielectric film.
PCT/US2007/022198 2006-11-07 2007-10-18 Atomic layer deposition in the formation of gate structures for iii-v semiconductor WO2008057179A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/557,354 US7692222B2 (en) 2006-11-07 2006-11-07 Atomic layer deposition in the formation of gate structures for III-V semiconductor
US11/557,354 2006-11-07

Publications (2)

Publication Number Publication Date
WO2008057179A2 WO2008057179A2 (en) 2008-05-15
WO2008057179A3 true WO2008057179A3 (en) 2008-07-31

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2007/022198 WO2008057179A2 (en) 2006-11-07 2007-10-18 Atomic layer deposition in the formation of gate structures for iii-v semiconductor

Country Status (3)

Country Link
US (1) US7692222B2 (en)
TW (1) TWI430444B (en)
WO (1) WO2008057179A2 (en)

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JP5332113B2 (en) * 2007-02-15 2013-11-06 富士通株式会社 Semiconductor device and manufacturing method thereof
US8319310B2 (en) * 2009-03-31 2012-11-27 Freescale Semiconductor, Inc. Field effect transistor gate process and structure
EP2571509B1 (en) 2010-05-20 2016-07-06 Allergan, Inc. Degradable clostridial toxins
CN102576727B (en) * 2010-06-23 2016-01-27 康奈尔大学 Gated III-V semiconductor structure and method
CN104011867B (en) 2011-12-23 2016-12-07 英特尔公司 III-N material structure for gate recess transistor
KR101903509B1 (en) * 2012-07-11 2018-10-05 한국전자통신연구원 Method of making field effect type compound semiconductor device
RU2534447C1 (en) * 2013-07-09 2014-11-27 Открытое акционерное общество "Научно-производственное предприятие "Пульсар" Pseudomorphic heterointerface modulation-doped field-effect transistor
US9379327B1 (en) * 2014-12-16 2016-06-28 Carbonics Inc. Photolithography based fabrication of 3D structures
US9859157B1 (en) 2016-07-14 2018-01-02 International Business Machines Corporation Method for forming improved liner layer and semiconductor device including the same
TWI788692B (en) * 2020-08-04 2023-01-01 晶元光電股份有限公司 Power semiconductor device and methods forming the same
US11515410B2 (en) 2020-10-30 2022-11-29 Raytheon Company Group III-V semiconductor structures having crystalline regrowth layers and methods for forming such structures
TWI813489B (en) * 2022-11-02 2023-08-21 財團法人工業技術研究院 Transistor structure and fabrication method of the same

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Also Published As

Publication number Publication date
TW200832697A (en) 2008-08-01
WO2008057179A2 (en) 2008-05-15
US7692222B2 (en) 2010-04-06
US20080105901A1 (en) 2008-05-08
TWI430444B (en) 2014-03-11

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