WO2008064874A1 - Multicolour quantum dot laser diode with low rin for optical transmission system - Google Patents

Multicolour quantum dot laser diode with low rin for optical transmission system Download PDF

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Publication number
WO2008064874A1
WO2008064874A1 PCT/EP2007/010313 EP2007010313W WO2008064874A1 WO 2008064874 A1 WO2008064874 A1 WO 2008064874A1 EP 2007010313 W EP2007010313 W EP 2007010313W WO 2008064874 A1 WO2008064874 A1 WO 2008064874A1
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WIPO (PCT)
Prior art keywords
laser
optical
transmission system
optical transmission
active region
Prior art date
Application number
PCT/EP2007/010313
Other languages
French (fr)
Inventor
Alexey Kovsh
Alexey Gubenko
Igor Krestnikov
Daniil Livshits
Sergey Mikhrin
Original Assignee
Innolume Gmbh
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Application filed by Innolume Gmbh filed Critical Innolume Gmbh
Priority to EP07856278.2A priority Critical patent/EP2095544B1/en
Publication of WO2008064874A1 publication Critical patent/WO2008064874A1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/341—Structures having reduced dimensionality, e.g. quantum wires
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/02—ASE (amplified spontaneous emission), noise; Reduction thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/06—Construction or shape of active medium
    • H01S3/063—Waveguide lasers, i.e. whereby the dimensions of the waveguide are of the order of the light wavelength
    • H01S3/067—Fibre lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
    • H01S5/0078—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping for frequency filtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1092—Multi-wavelength lasing
    • H01S5/1096—Multi-wavelength lasing in a single cavity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/341—Structures having reduced dimensionality, e.g. quantum wires
    • H01S5/3412—Structures having reduced dimensionality, e.g. quantum wires quantum box or quantum dash
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34306—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000nm, e.g. InP based 1300 and 1500nm lasers

Definitions

  • the present invention relates to an optical transmission system and, more particularly, to an optical transmission system that uses a plurality of optical signals at different wavelengths.
  • WDM wavelength-division- multiplexing
  • Modulating and detecting each channel independently is also required in order to carry information by means of an optical signal.
  • An optical transmission system includes a Fabry-Perot semiconductor diode laser, a transmitter and a receiver.
  • the laser operates in a continuous-wave regime on an inhomogeneously broadened optical transition of the active region of the laser.
  • a spectral bandwidth of an output lasing spectrum of the laser is greater than 5nm and a spectral power density of the laser is greater than 2mW/nm such that an optical power of the laser is greater than 1OmW.
  • the laser provides a plurality of longitudinal modes of the resonator, i.e. a plurality of optical signals at different wavelengths.
  • a relative intensity noise (RIN) of at least ten longitudinal modes does not exceed -120 dB /Hz at 0.1GHz, - 130 dB /Hz at l.OGHz and -140 dB /Hz at 10GHz.
  • the transmitter is capable of providing modulation to each lasing wavelength independently and the receiver is capable of providing detection to each lasing wavelength independently.
  • the laser may further include a bandpass filter in order to restrict the spectral range of emission to a desired number of optical channels.
  • a laser based on an active region with an inhomogeneously broadened optical transition achieves a broad spectrum of the laser emission in combination with sufficiently high spectral power density.
  • the temporal stability of spectral distribution of the emitted optical power may be very high and a relative intensity noise may be sufficiently low. This allows splitting an output spectrum into several independent optical channels and manipulating them separately for the use in a WDM system.
  • the active region is an array of semiconductor quantum dots formed by self-organization phenomena in epitaxial growth.
  • Figure 1 schematically shows an optical transmission system according to a preferred embodiment of the present invention.
  • Figure 2a schematically illustrates a spectrum of a plurality of CW (continuous wave) optical signals 21, 22, and 23.
  • Figure 2b shows the intensity of the CW optical signals 21, 22 and 23 in Figure 2a over time.
  • Figure 2c schematically illustrates a spectrum of a plurality of intensity modulated optical signals 41, 42, and 43.
  • Figure 2d shows the intensity of the intensity modulated optical signals 41, 42, and 43 over time.
  • Figure 3a shows an example of experimental emission spectrum of a semiconductor laser fabricated in accordance with an embodiment of the present invention.
  • Figure 3b shows in more detail part of the experimental emission spectrum of a semiconductor laser of Figure 3a.
  • Figure 4a shows an experimental spectrum of one spectrally filtered longitudinal mode (one optical channel) of a laser fabricated in accordance with a preferred embodiment of the present invention.
  • Figure 4b shows a frequency spectrum of relative intensity noise for one optical channel of an optical source fabricated in accordance with a preferred embodiment of the present invention.
  • Figure 5 a shows an eye diagram generated by a 10Gb/s digital modulation of one spectrally filtered longitudinal mode (one optical channel) of a laser fabricated in accordance with a preferred embodiment of the present invention.
  • Figure 5b shows an eye diagram generated by a 10Gb/s digital modulation of a single- frequency emission of a prior-art laser.
  • a conventional laser for example a semiconductor diode laser based on a quantum well, is sometimes capable of providing a relatively broad optical spectrum. This is termed multi-frequency laser operation, when the laser emits a number of longitudinal modes of the resonator.
  • multi-frequency laser operation when the laser emits a number of longitudinal modes of the resonator.
  • the spectral bandwidth is typically only a few nanometers. Therefore, it is difficult to split such a spectrum into many channels.
  • temporal stability of a spectral distribution of the optical power is very low (i.e. RIN of a longitudinal mode is high). Therefore, a split optical channel is very noisy.
  • the first limitation comes from the fact that, in the active region of a conventional laser, there exists a fast rate of carrier capture and relaxation to the energy levels. As a result, an optical gain saturation is not very pronounced and a tendency to lase at several longitudinal modes is apparent to a lesser degree.
  • the second limitation is due to a competition between different longitudinal modes for a common gain (mode partition noise) because the laser medium is homogeneously broadened.
  • the laser is based on an active region with an increased time of energy relaxation and inhomogeneously broadened optical transition. It is possible to achieve a broad spectrum of the laser emission in combination with sufficiently high spectral power density.
  • the temporal stability of spectral distribution of the emitted optical power can be very high, i.e. a relative intensity noise can be sufficiently low. This allows splitting an output spectrum into several independent optical channels and manipulating them separately for the use in a WDM system.
  • Such an active region is an array of semiconductor quantum dots formed by self-organization phenomena in epitaxial growth.
  • quantum dot electronic states of different energy within an inhomogeneously broadened ground-state level belong to spatially separated quantum dots having different sizes, shapes or other parameters which affect the quantum energy. Therefore, in a quantum dot laser, only a certain portion of the available quantum dots contributes to the lasing process, namely those quantum dots which have an optical transition energy approximately equal to the lasing transition.
  • Other quantum dots act as a reservoir providing charge carriers to the lasing dots.
  • a high degree of temporal stability in such a laser system means that an optical power of each split optical channel remains stable for a long period of time which makes it possible to achieve low levels of noise and acceptable error bit rates.
  • This improvement in temporal stability likely originates from being able to easily saturate the optical gain of an inhomogeneously broadened active region.
  • the laser operates in a regime of the saturated gain in a significant part of the spectrum, there is no possibility for different longitudinal modes to compete for a gain. Therefore, the optical gain in a significant part of the spectrum remains at its saturated level being stable in time. This results in high stability of intensities of emitted longitudinal modes. In one embodiment, this results in high stability of intensities of a multimode laser, for example a Fabry-Perot laser.
  • the transmission system 100 includes a laser 10, a transmitter 60 and a receiver 90.
  • the laser emits a plurality 20 of optical signals at different wavelengths. In Figure 1, only three different wavelengths are illustrated by numerals 21, 22, 23. However, it is preferred that the laser emits more optical signals at different wavelengths.
  • the laser may further include a bandpass filter, for example a distributed Bragg reflector, in order to restrict a number of emitting longitudinal modes to a desired number of optical channels. It is preferred that the laser 10 operates in a continuous- wave (CW) mode such that the intensities of the optical signals 21, 22, 23 are nearly constant in time. The intensities of optical signals 21, 22, 23 at different wavelengths are also preferably nearly equal to each other.
  • CW continuous- wave
  • the transmitter 60 may include waveguides, modulators, as well as lenses, prisms, arrayed waveguide gratings, and other standard optical components.
  • the waveguides, modulators, and other optical components of the transmitter 60 are preferably embedded into a semiconductor chip.
  • the semiconductor chip is preferably based on a material including, but not limited to, silicon, gallium arsenide, or indium phosphide.
  • the optical signals 20 enter the transmitter 60.
  • the transmitter is capable of providing modulation to each lasing wavelength independently in response to a plurality of control signals 51, 52, 53.
  • the transmitter 60 outputs a plurality 40 of the intensity modulated optical signals 41, 42, and 43 at different wavelengths. It is preferred that the number of modulated optical signals 41, 42, and 43 corresponds to a number of CW optical signals 21, 22, and 23, while their wavelengths remain unchanged.
  • the optical transmission system 100 may further include a transmission line 15 that is intended to guide the modulated optical signals 41, 42, and 43 at different wavelengths outputted from the transmitter 60 to the receiver 90.
  • the transmission line 15 may include optical fibers, planar waveguides, mirrors, lenses and other standard optical components suitable for guiding the light.
  • the receiver 90 may include waveguides and detectors as well as lenses, prisms, arrayed waveguide gratings, and other standard optical components.
  • the waveguides, detectors, and other optical components of the receiver 90 are preferably embedded into a semiconductor chip.
  • the semiconductor chip is preferably based on a material including, but not limited to, silicon, gallium arsenide, or indium phosphide.
  • the plurality 40 of the intensity modulated optical signals enter the receiver 90.
  • the receiver 90 is capable of providing detection to each lasing wavelength independently. As a result, the receiver 90 extracts as many information signals 81, 82, and 83 as different wavelengths are inputted.
  • Figures 2a and 2b schematically illustrate a spectrum of a plurality of CW optical signals 21, 22, and 23 and temporal variation of their intensity.
  • the laser emits a plurality of optical signals at different wavelengths ⁇ l, ⁇ 2 and ⁇ 3.
  • Each optical signal may represent a group of a few neighboring longitudinal modes.
  • each optical signal represents a single longitudinal mode.
  • Figure 1 Figure 2a and Figure 2b illustrate only three different wavelengths.
  • the laser preferably emits more optical signals at different wavelengths. Neighboring different wavelengths are preferably equally spaced.
  • the intensities of the optical signals 21, 22, 23 are nearly constant in time and the intensities of the optical signals 21, 22, 23 are nearly equal to each other.
  • Figures 2c and 2d schematically illustrate a spectrum of a plurality of intensity modulated optical signals 41, 42, and 43 and temporal variation of their intensity.
  • the set of wavelengths ⁇ l, ⁇ 2 and ⁇ 3 remains unchanged while the intensities of the optical signals 41, 42, and 43 are modulated in time in accordance with carrying information.
  • Figure 2d schematically shows that the intensity of an optical signal at certain wavelengths (e.g. of optical signal 41 at wavelength ⁇ l) is encoded.
  • the high intensity of signal 41 may correspond to level “1" of a binary sequence and the low intensity of signal 41 may correspond to level "0" of a binary sequence.
  • signal 42 at wavelength ⁇ 2 can be modulated independently, signal 42 (and other signals at other wavelengths) may carry another sequence of binary codes, thereby providing an additional information bearing channel.
  • the laser 10 is capable of operating on an inhomogeneously broadened ground- state optical transition of the active region of the laser.
  • the laser 100 is a semiconductor diode laser.
  • the active region of the laser includes a plurality of semiconductor quantum dots embedded in a semiconductor matrix having fluctuations in a parameter affecting the optical transition energy, including, but not limited to, solely or in combination: size, shape, chemical composition, strain and matrix.
  • the active region of the laser includes a plurality of two- dimensional quantum wells in a semiconductor matrix having fluctuations in a parameter affecting the optical transition energy, including, but not limited to, solely or in combination: thickness, chemical composition, compositional profile, strain and matrix.
  • the laser is a fiber laser and the active region of the laser includes a plurality of ions embedded in a fiber core having fluctuations in a parameter affecting the optical transition energy, including, but not limited to, solely or in combination: chemical composition, degree of ionization and the distance between neighboring ions.
  • lasers may be used in the system 100, provided that the laser 10 is capable of operating on an inhomogeneously broadened ground-state optical transition of the active region of the laser.
  • the laser may optionally include active regions with any combination of quantum dots and quantum wells.
  • a spectral bandwidth of an output lasing spectrum of the laser 10 is preferably greater than IOnm and a spectral power density of the laser 10 is preferably greater than 3mW/nm such that an optical power of the laser 10 is preferably greater than 3OmW.
  • a laser based on self-organized quantum dots is disclosed in U.S. patent application number 11/737,946, filed April 20, 2007, entitled "LASER SOURCE WITH BROADB AND SPECTRUM EMISSION".
  • the laser represents an edge-emitting Fabry-Perot laser in a pigtailed package.
  • a pigtailed package is a standard laser package having an optical fiber for outputting the laser radiation.
  • Different wavelengths ⁇ l, ⁇ 2, and ⁇ 3 correspond to different longitudinal modes of the Fabry-Perot resonator of the laser.
  • the laser 10 may further include a bandpass filter in order to restrict a number of emitting longitudinal modes to a desired number of optical channels.
  • the laser 10 provides a plurality 20 of optical signals at different wavelengths.
  • Figure 3a shows an example of an experimental emission spectrum of a semiconductor laser according to an embodiment of the present invention.
  • the active region of the laser represents an array of self-organized InAs/InGaAs quantum dots with inhomogeneously broadened optical transitions due to fluctuation of the quantum dot size.
  • the laser in this example operates in a CW regime at 25 0 C with a total optical power of 30OmW at a pump current of 550mA.
  • the laser spectrum ranges from approximately 1184nm to approximately 1228nm so that the spectral bandwidth is approximately 44nm and the average spectral power density is approximately 6.8 mW/nm.
  • the spectrum includes a number of longitudinal modes separated from each other by approximately 0.2 nm. Therefore, the laser spectrum may include as many as approximately 220 longitudinal modes. An average optical power of one longitudinal mode is therefore greater than 1.3 mW.
  • relative intensity noise spectra for several longitudinal modes of a broadband quantum-dot Fabry-Perot laser was measured to demonstrate high temporal stability of optical channels.
  • the laser active region represents ten non-identical planes of self-organized quantum dots.
  • Each quantum dot plane was formed by epitaxial deposition of 0.8nm-thick InAs insertions covered with In o .i 5 Gao. 85 As capping layers and embedded into a GaAs matrix.
  • the epitaxial wafer was processed into 3- ⁇ m-wide ridge structures.
  • the cavity length is approximately 1 mm as terminated by as-cleaved facets forming two laser mirrors.
  • the laser was driven by a forward CW current of 85mA, which is 5-times above the lasing threshold.
  • a separation between neighboring longitudinal modes is 0.22nm.
  • the laser emission bandwidth was restricted to 2nm (from 1264 to 1266nm) in order to include 10 longitudinal modes.
  • the average spectral power density of the laser was ⁇ 25mW/nm (total power is 5OmW), and an average optical power per one channel was more than 2 mW.
  • FIG. 4a shows a filtered intensity of one of the longitudinal modes. In this case, as well as for other filtered modes, side mode suppression ratio is ⁇ 20dB.
  • Figure 4b shows frequency dependence of relative intensity noise for one optical channel. The relative intensity noise is approximately -120 dB /Hz at 0.1GHz, -133 dB /Hz at 1.0GHz and -140 dB /Hz at 10GHz. Such a very low level of the relative intensity noise for a single wavelength line makes it suitable for an independent optical channel of a multi-channel transmission system.
  • Bit error rate and an eye diagram were measured for ten spectrally filtered optical channels to show that the optical source of the present invention is compatible with a highspeed WDM application.
  • the channel intensity was externally modulated at 10Gb/s by a 2 31 -1 pseudorandom binary non-return-to-zero sequence using a pulse pattern generator and a lithium niobate digital modulator.
  • Figure 5a shows an eye diagram for the 1265.48nm mode at -3dBm received power.
  • Figure 5a shows an "open eye", i.e. no error points in the central region.
  • An open eye pattern corresponds to minimal signal distortion.
  • Table 1 shows some of the data obtained from the eye diagram of Figure 5a.
  • the extinction ratio is defined as the ratio Pi/Po, where P 1 is the optical power level generated when the light source is "on,” and P 0 is the power level generated when the light source is “off.”
  • Figure 5a corresponds to an extinction ratio of approximately 7dB, which is sufficient for use in WDM applications.
  • the column labeled "current” includes data from a particular reading.
  • the column labeled “minimum” includes the minimum values obtained during the experiment and the column labeled "maximum” includes the maximum values obtained during the experiment.
  • the Q-factor (also called the “signal-to-noise ratio”) is defined as the signal difference between Pi and Po levels divided by the sum of noise at both levels ( ⁇ i and ⁇ 0 ):
  • FIG. 5b shows an eye diagram generated by a 10Gb/s digital modulation of a single- frequency emission of a prior-art laser.
  • Table 2 shows some of the data obtained from the eye diagram of Figure 5b.
  • a Q-factor of 11.8 was measured with a similar extinction ratio of approximately 7dB.
  • performance of the transmission system only slightly degrades when the single-frequency prior-art laser is substituted with the multi-mode laser of the present invention.
  • Comparison of Figure 5a and Figure 5b also reveals that a multi-mode laser of the present invention demonstrates a similar eye diagram at 10Gb/s modulation as the prior-art single-frequency laser.

Abstract

An optical transmission system includes a Fabry-Perot semiconductor diode laser, a transmitter and a receiver. The laser operates in a continuous-wave regime on an inhomogeneously broadened optical transition of the active region of the laser. A spectral bandwidth of an output lasing spectrum of the laser is greater than 5nm and a spectral power density of the laser is greater than 2mW/nm such that an optical power of the laser is greater than 1OmW. The laser provides a plurality of longitudinal modes (optical signals) of the resonator at different wavelengths. A relative intensity noise of at least ten longitudinal modes does not exceed -120 dB /Hz at 0.1GHz, -130 dB /Hz at 1.0GHz and - 140 dB /Hz at 10GHz. The transmitter is capable of providing modulation to each lasing wavelength independently and the receiver is capable of providing detection to each lasing wavelength independently.

Description

MULTICOLOUR QUANTUM DOT LASER DIODE WITH LOW RIN FOR OPTICAL TRANSMISSION SYSTEM
REFERENCE TO RELATED APPLICATIONS
This application claims one or more inventions which were disclosed in Provisional Application Number 60/867,952, filed November 30, 2006, entitled "OPTICAL TRANSMISSION SYSTEM" . The benefit under 35 USC § 119(e) of the United States provisional application is hereby claimed, and the aforementioned application is hereby incorporated herein by reference.
This application also claims the benefit of U.S. patent application serial number 11/938,472, filed November 12, 2007, entitled "OPTICAL TRANSMISSION SYSTEM".
BACKGROUND OF THE INVENTION
FEELD OF THE INVENTION
The present invention relates to an optical transmission system and, more particularly, to an optical transmission system that uses a plurality of optical signals at different wavelengths.
DESCRIPTION OF RELATED ART
The use of optical signals having different wavelengths results in greatly increased information carrying capacity. This technique is known as wavelength-division- multiplexing (WDM). This technique requires an optical source which is capable of providing a sufficiently large number of signals having different wavelengths (channels) and is also capable of providing a sufficiently high optical power per channel.
Modulating and detecting each channel independently is also required in order to carry information by means of an optical signal.
There is a need in the art for an optical transmission system based on a single laser instead of a plurality of lasers. SUMMARY OF THE INVENTION
An optical transmission system includes a Fabry-Perot semiconductor diode laser, a transmitter and a receiver. The laser operates in a continuous-wave regime on an inhomogeneously broadened optical transition of the active region of the laser. A spectral bandwidth of an output lasing spectrum of the laser is greater than 5nm and a spectral power density of the laser is greater than 2mW/nm such that an optical power of the laser is greater than 1OmW. The laser provides a plurality of longitudinal modes of the resonator, i.e. a plurality of optical signals at different wavelengths. A relative intensity noise (RIN) of at least ten longitudinal modes does not exceed -120 dB /Hz at 0.1GHz, - 130 dB /Hz at l.OGHz and -140 dB /Hz at 10GHz. The transmitter is capable of providing modulation to each lasing wavelength independently and the receiver is capable of providing detection to each lasing wavelength independently.
The laser may further include a bandpass filter in order to restrict the spectral range of emission to a desired number of optical channels.
A laser based on an active region with an inhomogeneously broadened optical transition achieves a broad spectrum of the laser emission in combination with sufficiently high spectral power density. The temporal stability of spectral distribution of the emitted optical power may be very high and a relative intensity noise may be sufficiently low. This allows splitting an output spectrum into several independent optical channels and manipulating them separately for the use in a WDM system. In a preferred embodiment, the active region is an array of semiconductor quantum dots formed by self-organization phenomena in epitaxial growth.
BRIEF DESCRIPTION OF THE DRAWINGS
Figure 1 schematically shows an optical transmission system according to a preferred embodiment of the present invention.
Figure 2a schematically illustrates a spectrum of a plurality of CW (continuous wave) optical signals 21, 22, and 23. Figure 2b shows the intensity of the CW optical signals 21, 22 and 23 in Figure 2a over time.
Figure 2c schematically illustrates a spectrum of a plurality of intensity modulated optical signals 41, 42, and 43.
Figure 2d shows the intensity of the intensity modulated optical signals 41, 42, and 43 over time.
Figure 3a shows an example of experimental emission spectrum of a semiconductor laser fabricated in accordance with an embodiment of the present invention.
Figure 3b shows in more detail part of the experimental emission spectrum of a semiconductor laser of Figure 3a.
Figure 4a shows an experimental spectrum of one spectrally filtered longitudinal mode (one optical channel) of a laser fabricated in accordance with a preferred embodiment of the present invention.
Figure 4b shows a frequency spectrum of relative intensity noise for one optical channel of an optical source fabricated in accordance with a preferred embodiment of the present invention.
Figure 5 a shows an eye diagram generated by a 10Gb/s digital modulation of one spectrally filtered longitudinal mode (one optical channel) of a laser fabricated in accordance with a preferred embodiment of the present invention.
Figure 5b shows an eye diagram generated by a 10Gb/s digital modulation of a single- frequency emission of a prior-art laser.
DETAILED DESCRIPTION OF THE INVENTION
An optical source for an optical transmission system based on a single laser instead of a plurality of lasers would be economically beneficial. For example, U.S. patent application serial number 11/737,946, filed April 20, 2007, entitled "LASER SOURCE WITH BROADBAND SPECTRUM EMISSION, herein incorporated by reference, discloses a laser based on semiconductor quantum dots having a broadband spectrum of emission and a high output power.
A conventional laser, for example a semiconductor diode laser based on a quantum well, is sometimes capable of providing a relatively broad optical spectrum. This is termed multi-frequency laser operation, when the laser emits a number of longitudinal modes of the resonator. However, in a conventional laser, there are two limitations which prevent the use of such an output in a WDM system. First, the spectral bandwidth is typically only a few nanometers. Therefore, it is difficult to split such a spectrum into many channels. Second, temporal stability of a spectral distribution of the optical power is very low (i.e. RIN of a longitudinal mode is high). Therefore, a split optical channel is very noisy.
The first limitation comes from the fact that, in the active region of a conventional laser, there exists a fast rate of carrier capture and relaxation to the energy levels. As a result, an optical gain saturation is not very pronounced and a tendency to lase at several longitudinal modes is apparent to a lesser degree. The second limitation is due to a competition between different longitudinal modes for a common gain (mode partition noise) because the laser medium is homogeneously broadened.
These limitations can be eliminated if the laser is based on an active region with an increased time of energy relaxation and inhomogeneously broadened optical transition. It is possible to achieve a broad spectrum of the laser emission in combination with sufficiently high spectral power density. The temporal stability of spectral distribution of the emitted optical power can be very high, i.e. a relative intensity noise can be sufficiently low. This allows splitting an output spectrum into several independent optical channels and manipulating them separately for the use in a WDM system.
One example of such an active region is an array of semiconductor quantum dots formed by self-organization phenomena in epitaxial growth. In such an array, quantum dot electronic states of different energy within an inhomogeneously broadened ground-state level belong to spatially separated quantum dots having different sizes, shapes or other parameters which affect the quantum energy. Therefore, in a quantum dot laser, only a certain portion of the available quantum dots contributes to the lasing process, namely those quantum dots which have an optical transition energy approximately equal to the lasing transition. Other quantum dots act as a reservoir providing charge carriers to the lasing dots. However, such an interaction can be strongly suppressed because a charge carrier should be first excited from the first quantum dot to a matrix or a wetting layer, then travel across the active region to a second dot, and finally be captured by the second dot. As a result, a refilling process may be significantly slowed down in a quantum dot laser, and therefore, broadening of the laser emission spectrum by side modes can be significantly enhanced. U.S. patent application serial number 11/737,946, filed April 20, 2007, entitled "LASER SOURCE WITH BROADBAND SPECTRUM EMISSION", discloses a method for increasing the spectral bandwidth and the spectral power density from a quantum dot diode laser.
A high degree of temporal stability in such a laser system means that an optical power of each split optical channel remains stable for a long period of time which makes it possible to achieve low levels of noise and acceptable error bit rates. This improvement in temporal stability likely originates from being able to easily saturate the optical gain of an inhomogeneously broadened active region. When the laser operates in a regime of the saturated gain in a significant part of the spectrum, there is no possibility for different longitudinal modes to compete for a gain. Therefore, the optical gain in a significant part of the spectrum remains at its saturated level being stable in time. This results in high stability of intensities of emitted longitudinal modes. In one embodiment, this results in high stability of intensities of a multimode laser, for example a Fabry-Perot laser.
An optical transmission system 100 according to a preferred embodiment of the present invention is schematically shown in Figure 1. The transmission system 100 includes a laser 10, a transmitter 60 and a receiver 90. The laser emits a plurality 20 of optical signals at different wavelengths. In Figure 1, only three different wavelengths are illustrated by numerals 21, 22, 23. However, it is preferred that the laser emits more optical signals at different wavelengths. In a preferred embodiment, the laser may further include a bandpass filter, for example a distributed Bragg reflector, in order to restrict a number of emitting longitudinal modes to a desired number of optical channels. It is preferred that the laser 10 operates in a continuous- wave (CW) mode such that the intensities of the optical signals 21, 22, 23 are nearly constant in time. The intensities of optical signals 21, 22, 23 at different wavelengths are also preferably nearly equal to each other.
The transmitter 60 may include waveguides, modulators, as well as lenses, prisms, arrayed waveguide gratings, and other standard optical components. The waveguides, modulators, and other optical components of the transmitter 60 are preferably embedded into a semiconductor chip. The semiconductor chip is preferably based on a material including, but not limited to, silicon, gallium arsenide, or indium phosphide.
The optical signals 20 enter the transmitter 60. The transmitter is capable of providing modulation to each lasing wavelength independently in response to a plurality of control signals 51, 52, 53. As a result, the transmitter 60 outputs a plurality 40 of the intensity modulated optical signals 41, 42, and 43 at different wavelengths. It is preferred that the number of modulated optical signals 41, 42, and 43 corresponds to a number of CW optical signals 21, 22, and 23, while their wavelengths remain unchanged.
The optical transmission system 100 may further include a transmission line 15 that is intended to guide the modulated optical signals 41, 42, and 43 at different wavelengths outputted from the transmitter 60 to the receiver 90. The transmission line 15 may include optical fibers, planar waveguides, mirrors, lenses and other standard optical components suitable for guiding the light.
The receiver 90 may include waveguides and detectors as well as lenses, prisms, arrayed waveguide gratings, and other standard optical components. The waveguides, detectors, and other optical components of the receiver 90 are preferably embedded into a semiconductor chip. The semiconductor chip is preferably based on a material including, but not limited to, silicon, gallium arsenide, or indium phosphide.
The plurality 40 of the intensity modulated optical signals enter the receiver 90. The receiver 90 is capable of providing detection to each lasing wavelength independently. As a result, the receiver 90 extracts as many information signals 81, 82, and 83 as different wavelengths are inputted. Figures 2a and 2b schematically illustrate a spectrum of a plurality of CW optical signals 21, 22, and 23 and temporal variation of their intensity. The laser emits a plurality of optical signals at different wavelengths λl, λ2 and λ3. Each optical signal may represent a group of a few neighboring longitudinal modes. Preferably, each optical signal represents a single longitudinal mode.
Figure 1, Figure 2a and Figure 2b illustrate only three different wavelengths. However, the laser preferably emits more optical signals at different wavelengths. Neighboring different wavelengths are preferably equally spaced. The intensities of the optical signals 21, 22, 23 are nearly constant in time and the intensities of the optical signals 21, 22, 23 are nearly equal to each other.
Figures 2c and 2d schematically illustrate a spectrum of a plurality of intensity modulated optical signals 41, 42, and 43 and temporal variation of their intensity. The set of wavelengths λl, λ2 and λ3 remains unchanged while the intensities of the optical signals 41, 42, and 43 are modulated in time in accordance with carrying information.
Figure 2d schematically shows that the intensity of an optical signal at certain wavelengths (e.g. of optical signal 41 at wavelength λl) is encoded. There are different schemes of encoding. For example, the high intensity of signal 41 may correspond to level "1" of a binary sequence and the low intensity of signal 41 may correspond to level "0" of a binary sequence. Thus, it is possible to carry certain information as a sequence of "0" and "1" binary codes by changing the intensity of the optical signal 41. Because signal 42 at wavelength λ2 can be modulated independently, signal 42 (and other signals at other wavelengths) may carry another sequence of binary codes, thereby providing an additional information bearing channel.
The laser 10 is capable of operating on an inhomogeneously broadened ground- state optical transition of the active region of the laser. In a preferred embodiment, the laser 100 is a semiconductor diode laser. In one embodiment, the active region of the laser includes a plurality of semiconductor quantum dots embedded in a semiconductor matrix having fluctuations in a parameter affecting the optical transition energy, including, but not limited to, solely or in combination: size, shape, chemical composition, strain and matrix. In another embodiment, the active region of the laser includes a plurality of two- dimensional quantum wells in a semiconductor matrix having fluctuations in a parameter affecting the optical transition energy, including, but not limited to, solely or in combination: thickness, chemical composition, compositional profile, strain and matrix.
In yet another embodiment, the laser is a fiber laser and the active region of the laser includes a plurality of ions embedded in a fiber core having fluctuations in a parameter affecting the optical transition energy, including, but not limited to, solely or in combination: chemical composition, degree of ionization and the distance between neighboring ions.
Other kinds of lasers may be used in the system 100, provided that the laser 10 is capable of operating on an inhomogeneously broadened ground-state optical transition of the active region of the laser. For example, the laser may optionally include active regions with any combination of quantum dots and quantum wells.
A spectral bandwidth of an output lasing spectrum of the laser 10 is preferably greater than IOnm and a spectral power density of the laser 10 is preferably greater than 3mW/nm such that an optical power of the laser 10 is preferably greater than 3OmW. One example of such a laser based on self-organized quantum dots is disclosed in U.S. patent application number 11/737,946, filed April 20, 2007, entitled "LASER SOURCE WITH BROADB AND SPECTRUM EMISSION".
In a preferred embodiment, the laser represents an edge-emitting Fabry-Perot laser in a pigtailed package. A pigtailed package is a standard laser package having an optical fiber for outputting the laser radiation. Different wavelengths λl, λ2, and λ3 correspond to different longitudinal modes of the Fabry-Perot resonator of the laser. The laser 10 may further include a bandpass filter in order to restrict a number of emitting longitudinal modes to a desired number of optical channels. Thus, the laser 10 provides a plurality 20 of optical signals at different wavelengths.
Examples
Figure 3a shows an example of an experimental emission spectrum of a semiconductor laser according to an embodiment of the present invention. The active region of the laser represents an array of self-organized InAs/InGaAs quantum dots with inhomogeneously broadened optical transitions due to fluctuation of the quantum dot size. The laser in this example operates in a CW regime at 250C with a total optical power of 30OmW at a pump current of 550mA. The laser spectrum ranges from approximately 1184nm to approximately 1228nm so that the spectral bandwidth is approximately 44nm and the average spectral power density is approximately 6.8 mW/nm.
As shown in Figure 3b, where the 1218-1220nm interval of the spectrum is shown in more detail, the spectrum includes a number of longitudinal modes separated from each other by approximately 0.2 nm. Therefore, the laser spectrum may include as many as approximately 220 longitudinal modes. An average optical power of one longitudinal mode is therefore greater than 1.3 mW.
In another example, relative intensity noise spectra for several longitudinal modes of a broadband quantum-dot Fabry-Perot laser was measured to demonstrate high temporal stability of optical channels. The laser active region represents ten non-identical planes of self-organized quantum dots. Each quantum dot plane was formed by epitaxial deposition of 0.8nm-thick InAs insertions covered with Ino.i5Gao.85As capping layers and embedded into a GaAs matrix. The epitaxial wafer was processed into 3-μm-wide ridge structures. The cavity length is approximately 1 mm as terminated by as-cleaved facets forming two laser mirrors. The laser was driven by a forward CW current of 85mA, which is 5-times above the lasing threshold.
In this example, a separation between neighboring longitudinal modes (neighboring optical channels) is 0.22nm. The laser emission bandwidth was restricted to 2nm (from 1264 to 1266nm) in order to include 10 longitudinal modes. The average spectral power density of the laser was ~25mW/nm (total power is 5OmW), and an average optical power per one channel was more than 2 mW.
An individual line mode was filtered out using a fiber Fabry-Perot tunable filter. Figure 4a shows a filtered intensity of one of the longitudinal modes. In this case, as well as for other filtered modes, side mode suppression ratio is ~20dB. Figure 4b shows frequency dependence of relative intensity noise for one optical channel. The relative intensity noise is approximately -120 dB /Hz at 0.1GHz, -133 dB /Hz at 1.0GHz and -140 dB /Hz at 10GHz. Such a very low level of the relative intensity noise for a single wavelength line makes it suitable for an independent optical channel of a multi-channel transmission system.
Bit error rate and an eye diagram were measured for ten spectrally filtered optical channels to show that the optical source of the present invention is compatible with a highspeed WDM application. The channel intensity was externally modulated at 10Gb/s by a 231-1 pseudorandom binary non-return-to-zero sequence using a pulse pattern generator and a lithium niobate digital modulator.
Figure 5a shows an eye diagram for the 1265.48nm mode at -3dBm received power. Figure 5a shows an "open eye", i.e. no error points in the central region. An open eye pattern corresponds to minimal signal distortion.
Table 1 shows some of the data obtained from the eye diagram of Figure 5a. The extinction ratio is defined as the ratio Pi/Po, where P1 is the optical power level generated when the light source is "on," and P0 is the power level generated when the light source is "off." Figure 5a corresponds to an extinction ratio of approximately 7dB, which is sufficient for use in WDM applications. The column labeled "current" includes data from a particular reading. The column labeled "minimum" includes the minimum values obtained during the experiment and the column labeled "maximum" includes the maximum values obtained during the experiment.
Table 1
Figure imgf000011_0001
The Q-factor (also called the "signal-to-noise ratio") is defined as the signal difference between Pi and Po levels divided by the sum of noise at both levels (σi and σ0):
P - P Q = — — . The Q-factor depends on the laser noise and the noise of the other elements
of the system (modulator noise, photodetector noise, electronics noise, oscilloscope noise, etc.).
For the data of Figure 5a, a Q-factor of 10.3 was measured, which is sufficient for error-free transmission. A bit error rate (BER) of less than 10'13 was experimentally obtained, which is usually considered as an error-free transmission level. Similar BER and eye diagrams were achieved for other modes within the bandwidth interval of 1264- 1266nm.
For comparison, a similar experiment was performed using a commercially available prior-art laser. The laser is a 1.3/xm InP-based DBF laser in an external cavity configuration having a single-frequency emission spectrum (i.e. emitting one mode). Figure 5b shows an eye diagram generated by a 10Gb/s digital modulation of a single- frequency emission of a prior-art laser. Table 2 shows some of the data obtained from the eye diagram of Figure 5b. For the data of Figure 5b, a Q-factor of 11.8 was measured with a similar extinction ratio of approximately 7dB. Thus, performance of the transmission system only slightly degrades when the single-frequency prior-art laser is substituted with the multi-mode laser of the present invention. Comparison of Figure 5a and Figure 5b also reveals that a multi-mode laser of the present invention demonstrates a similar eye diagram at 10Gb/s modulation as the prior-art single-frequency laser.
Table 2
Figure imgf000012_0001
Accordingly, it is to be understood that the embodiments of the invention herein described are merely illustrative of the application of the principles of the invention. Reference herein to details of the illustrated embodiments is not intended to limit the scope of the claims, which themselves recite those features regarded as essential to the invention.

Claims

What is claimed is:
1. An optical transmission system comprising:
a) a Fabry-Perot semiconductor diode laser comprising an active region and a resonator;
wherein the laser operates in a continuous-wave regime on an inhomogeneously broadened optical transition of the active region;
wherein a spectral bandwidth of an output lasing spectrum of the laser is greater than 5nm and a spectral power density of the laser is greater than 2mW/nm such that an optical power of the laser is greater than 1OmW;
wherein the laser provides a plurality of longitudinal modes of the resonator at a plurality of different lasing wavelengths; and
wherein a relative intensity noise of at least ten longitudinal modes does not exceed -120 dB /Hz at 0.1GHz, -130 dB /Hz at l.OGHz and -140 dB /Hz at 10GHz;
b) a transmitter that provides modulation to each optical signal independently; and
c) a receiver that provides detection to each optical signal independently.
2. The optical transmission system of claim 1 wherein the active region of the laser comprises a plurality of semiconductor quantum dots embedded in a semiconductor matrix having fluctuations in a parameter affecting the optical transition energy, wherein the parameter is selected from the group consisting of:
a) size;
b) shape; c) chemical composition;
d) strain;
e) matrix; and
f) any combination of a) through e).
3. The optical transmission system of claim 1 wherein the active region of the laser comprises a plurality of two-dimensional quantum wells in a semiconductor matrix having fluctuations in a parameter affecting the optical transition energy, wherein the parameter is selected from the group consisting of:
a) thickness;
b) chemical composition;
c) compositional profile;
d) strain;
e) matrix; and
f) any combination of a) through e).
4. The optical transmission system of claim 1 further comprising a bandpass filter that restricts a width of an emission spectrum of the laser to a desired number of optical signals; wherein a relative intensity noise of each of the longitudinal modes within the restricted emission spectrum does not exceed -120 dB /Hz at 0.1GHz, -130 dB /Hz at l.OGHz and -140 dB /Hz at 10GHz.
5. The optical transmission system of claim 1, wherein the transmitter comprises at least one waveguide and at least one modulator embedded into a first semiconductor chip and the receiver comprises at least one waveguide and at least one detector embedded into a second semiconductor chip.
6. The optical transmission system of claim 5, wherein the semiconductor chip comprises a material selected from the group consisting of: silicon, gallium arsenide, indium phosphide.
7. The optical transmission system of claim 1, further comprising a transmission line to guide the optical signals from the transmitter to the receiver.
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