WO2008086066A3 - Power supply for an ion implantation system - Google Patents

Power supply for an ion implantation system Download PDF

Info

Publication number
WO2008086066A3
WO2008086066A3 PCT/US2008/050062 US2008050062W WO2008086066A3 WO 2008086066 A3 WO2008086066 A3 WO 2008086066A3 US 2008050062 W US2008050062 W US 2008050062W WO 2008086066 A3 WO2008086066 A3 WO 2008086066A3
Authority
WO
WIPO (PCT)
Prior art keywords
power
power supply
high voltage
generation unit
supply system
Prior art date
Application number
PCT/US2008/050062
Other languages
French (fr)
Other versions
WO2008086066A2 (en
Inventor
Piotr R Lubicki
Russell J Low
Stephen E Krause
Eric Hermanson
Original Assignee
Varian Semiconductor Equipment
Piotr R Lubicki
Russell J Low
Stephen E Krause
Eric Hermanson
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Varian Semiconductor Equipment, Piotr R Lubicki, Russell J Low, Stephen E Krause, Eric Hermanson filed Critical Varian Semiconductor Equipment
Publication of WO2008086066A2 publication Critical patent/WO2008086066A2/en
Publication of WO2008086066A3 publication Critical patent/WO2008086066A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/02—Conversion of ac power input into dc power output without possibility of reversal
    • H02M7/04—Conversion of ac power input into dc power output without possibility of reversal by static converters
    • H02M7/06—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes without control electrode or semiconductor devices without control electrode
    • H02M7/10—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes without control electrode or semiconductor devices without control electrode arranged for operation in series, e.g. for multiplication of voltage
    • H02M7/103—Containing passive elements (capacitively coupled) which are ordered in cascade on one source
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/248—Components associated with high voltage supply
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/02—Conversion of ac power input into dc power output without possibility of reversal
    • H02M7/04—Conversion of ac power input into dc power output without possibility of reversal by static converters
    • H02M7/06—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes without control electrode or semiconductor devices without control electrode
    • H02M7/10—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes without control electrode or semiconductor devices without control electrode arranged for operation in series, e.g. for multiplication of voltage

Abstract

A power supply system for an ion implantation system. In one particular exemplary embodiment, the system may be realized as a power supply system that includes a low frequency power inverter, a stack driver and a high voltage power generation unit that receives source power from the power inverter. The high voltage generation unit may include a high voltage transformer for providing an output power that is multiplied to a desired output level and delivered to an input terminal of an ion beam accelerator. The power supply system may also include a dielectric enclosure that encases at least a portion of the high voltage power generation unit, thereby preventing variation in the break down strength of the internal components.
PCT/US2008/050062 2007-01-05 2008-01-03 Power supply for an ion implantation system WO2008086066A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/620,595 US7576337B2 (en) 2007-01-05 2007-01-05 Power supply for an ion implantation system
US11/620,595 2007-01-05

Publications (2)

Publication Number Publication Date
WO2008086066A2 WO2008086066A2 (en) 2008-07-17
WO2008086066A3 true WO2008086066A3 (en) 2008-12-18

Family

ID=39358891

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2008/050062 WO2008086066A2 (en) 2007-01-05 2008-01-03 Power supply for an ion implantation system

Country Status (5)

Country Link
US (1) US7576337B2 (en)
KR (1) KR20090115129A (en)
CN (1) CN101627529A (en)
TW (1) TWI430318B (en)
WO (1) WO2008086066A2 (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8143604B2 (en) * 2006-03-31 2012-03-27 Varian Semiconductor Equipment Associates, Inc. Insulator system for a terminal structure of an ion implantation system
US20090057573A1 (en) * 2007-08-29 2009-03-05 Varian Semiconductor Equipment Associates, Inc. Techniques for terminal insulation in an ion implanter
WO2010037832A2 (en) 2008-10-01 2010-04-08 Mapper Lithography Ip B.V. Electrostatic lens structure
CN103310865B (en) * 2013-05-28 2016-01-20 中国工程物理研究院激光聚变研究中心 A kind of light anode proton source
CN103812084A (en) * 2014-03-06 2014-05-21 上海华虹宏力半导体制造有限公司 Power supply device
JP6691573B2 (en) * 2018-04-27 2020-04-28 横河電機株式会社 Electric transmission mechanism and ion measuring instrument
JP6752449B2 (en) * 2018-08-09 2020-09-09 日新イオン機器株式会社 Ion beam neutralization method and equipment

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2823347A (en) * 1953-10-13 1958-02-11 Samuel A Procter High-voltage power supply
US3418526A (en) * 1966-05-13 1968-12-24 Westinghouse Electric Corp Compact high voltage supply
GB1209228A (en) * 1967-06-09 1970-10-21 Comp Generale Electricite High voltage d.c. apparatus
US3708740A (en) * 1971-01-15 1973-01-02 Commissariat Energie Atomique Device for producing a large direct-current potential difference
US5231564A (en) * 1992-03-30 1993-07-27 Lorad Corporation Power supply for producing excitation voltage for an x-ray tube filament
EP0753923A1 (en) * 1995-07-10 1997-01-15 Sames S.A. Method, device for producing a high voltage and installation for electrostatic spraying of a coating product
EP0973249A1 (en) * 1998-07-14 2000-01-19 High Voltage Engineering Europa B.V. Inherently stabilised DC high voltage generator
US20030058659A1 (en) * 2001-07-17 2003-03-27 Klinkowstein Robert E. High voltage generator

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4733137A (en) * 1986-03-14 1988-03-22 Walker Magnetics Group, Inc. Ion nitriding power supply
FR2611983A1 (en) * 1987-04-29 1988-09-09 Vtu Angel Kantchev ELECTRICAL SUPPLY CIRCUIT FOR AN ELECTRON BEAM EVAPORATOR
US5093646A (en) * 1988-04-29 1992-03-03 Fmtt, Inc. High frequency matrix transformer
NL9201391A (en) * 1992-07-31 1994-02-16 Deltec Fuel Systems Bv Control system for supplying a gas flow to a gas appliance.
US5350926A (en) * 1993-03-11 1994-09-27 Diamond Semiconductor Group, Inc. Compact high current broad beam ion implanter
US6348122B1 (en) * 1998-01-08 2002-02-19 Compression Polymers Group Fire retarding polypropylene composition
US7250617B2 (en) * 2004-02-12 2007-07-31 Varian Semiconductor Equipment Associates, Inc. Ion beam neutral detection
US8350657B2 (en) * 2005-06-30 2013-01-08 Derochemont L Pierre Power management module and method of manufacture
US8143604B2 (en) * 2006-03-31 2012-03-27 Varian Semiconductor Equipment Associates, Inc. Insulator system for a terminal structure of an ion implantation system
US7675046B2 (en) * 2006-09-27 2010-03-09 Varian Semiconductor Equipment Associates, Inc Terminal structure of an ion implanter

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2823347A (en) * 1953-10-13 1958-02-11 Samuel A Procter High-voltage power supply
US3418526A (en) * 1966-05-13 1968-12-24 Westinghouse Electric Corp Compact high voltage supply
GB1209228A (en) * 1967-06-09 1970-10-21 Comp Generale Electricite High voltage d.c. apparatus
US3708740A (en) * 1971-01-15 1973-01-02 Commissariat Energie Atomique Device for producing a large direct-current potential difference
US5231564A (en) * 1992-03-30 1993-07-27 Lorad Corporation Power supply for producing excitation voltage for an x-ray tube filament
EP0753923A1 (en) * 1995-07-10 1997-01-15 Sames S.A. Method, device for producing a high voltage and installation for electrostatic spraying of a coating product
EP0973249A1 (en) * 1998-07-14 2000-01-19 High Voltage Engineering Europa B.V. Inherently stabilised DC high voltage generator
US20030058659A1 (en) * 2001-07-17 2003-03-27 Klinkowstein Robert E. High voltage generator

Also Published As

Publication number Publication date
WO2008086066A2 (en) 2008-07-17
CN101627529A (en) 2010-01-13
TW200837801A (en) 2008-09-16
KR20090115129A (en) 2009-11-04
US20080164408A1 (en) 2008-07-10
TWI430318B (en) 2014-03-11
US7576337B2 (en) 2009-08-18

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