WO2008088599A8 - Forced ion migration for chalcogenide phase change memory device - Google Patents

Forced ion migration for chalcogenide phase change memory device Download PDF

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Publication number
WO2008088599A8
WO2008088599A8 PCT/US2007/082025 US2007082025W WO2008088599A8 WO 2008088599 A8 WO2008088599 A8 WO 2008088599A8 US 2007082025 W US2007082025 W US 2007082025W WO 2008088599 A8 WO2008088599 A8 WO 2008088599A8
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WO
WIPO (PCT)
Prior art keywords
phase change
devices
memory device
snte
layer
Prior art date
Application number
PCT/US2007/082025
Other languages
French (fr)
Other versions
WO2008088599A2 (en
WO2008088599A3 (en
WO2008088599B1 (en
Inventor
Kristy A Campbell
Original Assignee
Univ Boise State
Kristy A Campbell
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Boise State, Kristy A Campbell filed Critical Univ Boise State
Publication of WO2008088599A2 publication Critical patent/WO2008088599A2/en
Publication of WO2008088599A3 publication Critical patent/WO2008088599A3/en
Publication of WO2008088599B1 publication Critical patent/WO2008088599B1/en
Publication of WO2008088599A8 publication Critical patent/WO2008088599A8/en

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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20Multistable switching devices, e.g. memristors
    • H10N70/231Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011Manufacture or treatment of multistable switching devices
    • H10N70/021Formation of the switching material, e.g. layer deposition
    • H10N70/026Formation of the switching material, e.g. layer deposition by physical vapor deposition, e.g. sputtering
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011Manufacture or treatment of multistable switching devices
    • H10N70/041Modification of the switching material, e.g. post-treatment, doping
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011Manufacture or treatment of multistable switching devices
    • H10N70/061Patterning of the switching material
    • H10N70/066Patterning of the switching material by filling of openings, e.g. damascene method
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801Constructional details of multistable switching devices
    • H10N70/821Device geometry
    • H10N70/826Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801Constructional details of multistable switching devices
    • H10N70/881Switching materials
    • H10N70/882Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8825Selenides, e.g. GeSe
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801Constructional details of multistable switching devices
    • H10N70/881Switching materials
    • H10N70/882Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828Tellurides, e.g. GeSbTe
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00Nanotechnology
    • Y10S977/70Nanostructure
    • Y10S977/754Dendrimer, i.e. serially branching or "tree-like" structure

Abstract

Non-volatile memory devices with two stacked layers of chalcogenide materials comprising the active memory device have been investigated for their potential as phase change memories. The devices tested include GeTe/SnTe, Ge2Se3/SnTe, and Ge2Se3/SnSe stacks, all of which exhibit resistance switching behavior. The polarity of the applied voltage with respect to the SnTe or SnSe layer was critical to the memory switching properties, due to the electric field induced movement of either Sn or Te into the Ge-chalcogenide layer. The devices exhibit phase change switching only after a reverse polarity voltage potential is applied across the stack causing ion movement into an adjacent layer and thus 'activating' the device to act as a phase change random access memory device or a reconfigurable electronics device when the applied voltage potential is returned to the normal polarity. The devices may be capable of exhibiting more than two data states.
PCT/US2007/082025 2006-10-19 2007-10-19 Forced ion migration for chalcogenide phase change memory device WO2008088599A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US85306806P 2006-10-19 2006-10-19
US60/853,068 2006-10-19

Publications (4)

Publication Number Publication Date
WO2008088599A2 WO2008088599A2 (en) 2008-07-24
WO2008088599A3 WO2008088599A3 (en) 2008-10-16
WO2008088599B1 WO2008088599B1 (en) 2008-12-04
WO2008088599A8 true WO2008088599A8 (en) 2009-04-02

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2007/082025 WO2008088599A2 (en) 2006-10-19 2007-10-19 Forced ion migration for chalcogenide phase change memory device

Country Status (2)

Country Link
US (3) US7924608B2 (en)
WO (1) WO2008088599A2 (en)

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Also Published As

Publication number Publication date
US7924608B2 (en) 2011-04-12
US8611146B2 (en) 2013-12-17
US20110272662A1 (en) 2011-11-10
WO2008088599A2 (en) 2008-07-24
US20080121859A1 (en) 2008-05-29
US20130119336A1 (en) 2013-05-16
US8295081B2 (en) 2012-10-23
WO2008088599A3 (en) 2008-10-16
WO2008088599B1 (en) 2008-12-04

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