WO2008088599A8 - Forced ion migration for chalcogenide phase change memory device - Google Patents
Forced ion migration for chalcogenide phase change memory device Download PDFInfo
- Publication number
- WO2008088599A8 WO2008088599A8 PCT/US2007/082025 US2007082025W WO2008088599A8 WO 2008088599 A8 WO2008088599 A8 WO 2008088599A8 US 2007082025 W US2007082025 W US 2007082025W WO 2008088599 A8 WO2008088599 A8 WO 2008088599A8
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- phase change
- devices
- memory device
- snte
- layer
- Prior art date
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Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/021—Formation of the switching material, e.g. layer deposition
- H10N70/026—Formation of the switching material, e.g. layer deposition by physical vapor deposition, e.g. sputtering
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/041—Modification of the switching material, e.g. post-treatment, doping
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/061—Patterning of the switching material
- H10N70/066—Patterning of the switching material by filling of openings, e.g. damascene method
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8825—Selenides, e.g. GeSe
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8828—Tellurides, e.g. GeSbTe
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/70—Nanostructure
- Y10S977/754—Dendrimer, i.e. serially branching or "tree-like" structure
Abstract
Non-volatile memory devices with two stacked layers of chalcogenide materials comprising the active memory device have been investigated for their potential as phase change memories. The devices tested include GeTe/SnTe, Ge2Se3/SnTe, and Ge2Se3/SnSe stacks, all of which exhibit resistance switching behavior. The polarity of the applied voltage with respect to the SnTe or SnSe layer was critical to the memory switching properties, due to the electric field induced movement of either Sn or Te into the Ge-chalcogenide layer. The devices exhibit phase change switching only after a reverse polarity voltage potential is applied across the stack causing ion movement into an adjacent layer and thus 'activating' the device to act as a phase change random access memory device or a reconfigurable electronics device when the applied voltage potential is returned to the normal polarity. The devices may be capable of exhibiting more than two data states.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US85306806P | 2006-10-19 | 2006-10-19 | |
US60/853,068 | 2006-10-19 |
Publications (4)
Publication Number | Publication Date |
---|---|
WO2008088599A2 WO2008088599A2 (en) | 2008-07-24 |
WO2008088599A3 WO2008088599A3 (en) | 2008-10-16 |
WO2008088599B1 WO2008088599B1 (en) | 2008-12-04 |
WO2008088599A8 true WO2008088599A8 (en) | 2009-04-02 |
Family
ID=39636538
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2007/082025 WO2008088599A2 (en) | 2006-10-19 | 2007-10-19 | Forced ion migration for chalcogenide phase change memory device |
Country Status (2)
Country | Link |
---|---|
US (3) | US7924608B2 (en) |
WO (1) | WO2008088599A2 (en) |
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-
2007
- 2007-10-19 US US11/875,805 patent/US7924608B2/en active Active
- 2007-10-19 WO PCT/US2007/082025 patent/WO2008088599A2/en active Application Filing
-
2011
- 2011-04-12 US US13/085,265 patent/US8295081B2/en active Active
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2012
- 2012-10-22 US US13/657,495 patent/US8611146B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US7924608B2 (en) | 2011-04-12 |
US8611146B2 (en) | 2013-12-17 |
US20110272662A1 (en) | 2011-11-10 |
WO2008088599A2 (en) | 2008-07-24 |
US20080121859A1 (en) | 2008-05-29 |
US20130119336A1 (en) | 2013-05-16 |
US8295081B2 (en) | 2012-10-23 |
WO2008088599A3 (en) | 2008-10-16 |
WO2008088599B1 (en) | 2008-12-04 |
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