WO2008097448A3 - Methods of forming one or more covered voids in a semiconductor substrate, methods of forming field effect transistors, methods of forming semiconductor-on-insulator substrates, methods of forming a span comprising silicon dioxide, methods of cooling semiconductor devices, methods of forming electromagnetic radiation emitte - Google Patents
Methods of forming one or more covered voids in a semiconductor substrate, methods of forming field effect transistors, methods of forming semiconductor-on-insulator substrates, methods of forming a span comprising silicon dioxide, methods of cooling semiconductor devices, methods of forming electromagnetic radiation emitte Download PDFInfo
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- WO2008097448A3 WO2008097448A3 PCT/US2008/001126 US2008001126W WO2008097448A3 WO 2008097448 A3 WO2008097448 A3 WO 2008097448A3 US 2008001126 W US2008001126 W US 2008001126W WO 2008097448 A3 WO2008097448 A3 WO 2008097448A3
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- semiconductor
- electromagnetic radiation
- emitte
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/764—Air gaps
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02488—Insulating materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
- H01L21/02639—Preparation of substrate for selective deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
- H01L21/02647—Lateral overgrowth
- H01L21/0265—Pendeoepitaxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
- H01L21/2003—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
- H01L21/2015—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate the substrate being of crystalline semiconductor material, e.g. lattice adaptation, heteroepitaxy
Abstract
Some embodiments include methods of forming voids within semiconductor constructions. In some embodiments the voids may be utilized as microstructures for distributing coolant, for guiding electromagnetic radiation, or for separation and/or characterization of materials. Some embodiments include constructions having micro- structures therein which correspond to voids, conduits, insulative structures, semiconductor structures or conductive structures.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/704,466 US7989322B2 (en) | 2007-02-07 | 2007-02-07 | Methods of forming transistors |
US11/704,466 | 2007-02-07 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2008097448A2 WO2008097448A2 (en) | 2008-08-14 |
WO2008097448A3 true WO2008097448A3 (en) | 2009-03-19 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2008/001126 WO2008097448A2 (en) | 2007-02-07 | 2008-01-28 | Methods of forming one or more covered voids in a semiconductor substrate, methods of forming field effect transistors, methods of forming semiconductor-on-insulator substrates, methods of forming a span comprising silicon dioxide, methods of cooling semiconductor devices, methods of forming electromagnetic radiation emitte |
Country Status (3)
Country | Link |
---|---|
US (26) | US7989322B2 (en) |
TW (3) | TWI490976B (en) |
WO (1) | WO2008097448A2 (en) |
Families Citing this family (35)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7557002B2 (en) * | 2006-08-18 | 2009-07-07 | Micron Technology, Inc. | Methods of forming transistor devices |
US7989322B2 (en) | 2007-02-07 | 2011-08-02 | Micron Technology, Inc. | Methods of forming transistors |
KR101525590B1 (en) * | 2008-10-08 | 2015-06-04 | 삼성디스플레이 주식회사 | Display substrate and manufacturing method thereof |
TWI458129B (en) * | 2010-12-21 | 2014-10-21 | Lextar Electronics Corp | Light emitting diode chip structure and fabrication method thereof |
CN102769002B (en) * | 2011-04-30 | 2016-09-14 | 中国科学院微电子研究所 | Semiconductor device and forming method thereof, encapsulating structure |
US8648414B2 (en) | 2011-07-01 | 2014-02-11 | Micron Technology, Inc. | Semiconductor structures including bodies of semiconductor material, devices including such structures and related methods |
US8395217B1 (en) | 2011-10-27 | 2013-03-12 | International Business Machines Corporation | Isolation in CMOSFET devices utilizing buried air bags |
US10435812B2 (en) | 2012-02-17 | 2019-10-08 | Yale University | Heterogeneous material integration through guided lateral growth |
CN104380470B (en) * | 2012-05-18 | 2018-01-02 | 富士电机株式会社 | Semiconductor device |
KR102022658B1 (en) * | 2012-10-15 | 2019-09-18 | 서울바이오시스 주식회사 | Semiconductor device having insulation structure and method of fabricating the same |
CN104737310B (en) | 2012-10-15 | 2017-09-01 | 首尔伟傲世有限公司 | Semiconductor device and its manufacture method |
US8866204B2 (en) | 2013-01-30 | 2014-10-21 | Stmicroelectronics, Inc. | Method to form finFET/trigate devices on bulk semiconductor wafers |
US9059335B2 (en) * | 2013-02-27 | 2015-06-16 | Wisconsin Alumni Research Foundation | Anisotropic conducting films for electromagnetic radiation applications |
US8921992B2 (en) * | 2013-03-14 | 2014-12-30 | Raytheon Company | Stacked wafer with coolant channels |
US8753953B1 (en) * | 2013-03-15 | 2014-06-17 | International Business Machines Corporation | Self aligned capacitor fabrication |
WO2014144698A2 (en) * | 2013-03-15 | 2014-09-18 | Yale University | Large-area, laterally-grown epitaxial semiconductor layers |
US9978589B2 (en) | 2014-04-16 | 2018-05-22 | Yale University | Nitrogen-polar semipolar and gallium-polar semipolar GaN layers and devices on sapphire substrates |
WO2015160909A1 (en) | 2014-04-16 | 2015-10-22 | Yale University | Method of obtaining planar semipolar gallium nitride surfaces |
US9852902B2 (en) | 2014-10-03 | 2017-12-26 | Applied Materials, Inc. | Material deposition for high aspect ratio structures |
US10573627B2 (en) * | 2015-01-09 | 2020-02-25 | Silicon Genesis Corporation | Three dimensional integrated circuit |
US20180175008A1 (en) * | 2015-01-09 | 2018-06-21 | Silicon Genesis Corporation | Three dimensional integrated circuit |
JP6600476B2 (en) * | 2015-03-30 | 2019-10-30 | ルネサスエレクトロニクス株式会社 | Semiconductor device and manufacturing method thereof |
US9735161B2 (en) | 2015-09-09 | 2017-08-15 | Micron Technology, Inc. | Memory device and fabricating method thereof |
US9679897B1 (en) * | 2016-04-04 | 2017-06-13 | International Business Machines Corporation | High density nanofluidic structure with precisely controlled nano-channel dimensions |
TW201810383A (en) | 2016-08-12 | 2018-03-16 | 耶魯大學 | Stacking fault-free semipolar and nonpolar GaN grown on foreign substrates by eliminating the nitrogen polar facets during the growth |
KR102318560B1 (en) * | 2017-04-12 | 2021-11-01 | 삼성전자주식회사 | Semiconductor device |
JP7179825B2 (en) | 2017-08-21 | 2022-11-29 | イーライ リリー アンド カンパニー | Drug delivery device with sensing system |
JP6932836B2 (en) | 2017-08-21 | 2021-09-08 | イーライ リリー アンド カンパニー | Dose detection module for drug delivery device |
US11740226B2 (en) | 2017-10-13 | 2023-08-29 | Analog Devices International Unlimited Company | Designs and fabrication of nanogap sensors |
KR20190071227A (en) * | 2017-12-14 | 2019-06-24 | 에스케이하이닉스 주식회사 | Electronic device and method for fabricating the same |
US10553607B1 (en) | 2018-08-24 | 2020-02-04 | Micron Technology, Inc. | Method of forming an array of elevationally-extending strings of programmable memory cells and method of forming an array of elevationally-extending strings of memory cells |
US10446578B1 (en) | 2018-08-24 | 2019-10-15 | Micron Technology, Inc. | Methods used in forming an array of elevationally-extending strings of memory cells, methods of forming an array of elevationally-extending strings of memory cells, and methods of forming an array of vertical strings of memory cells |
FR3085536A1 (en) * | 2018-09-03 | 2020-03-06 | Soitec | CFET DEVICE AND METHOD FOR MANUFACTURING SUCH A DEVICE |
US11527623B2 (en) * | 2020-07-28 | 2022-12-13 | Micron Technology, Inc. | Integrated assemblies and methods of forming integrated assemblies |
US11355392B2 (en) * | 2020-08-07 | 2022-06-07 | Micron Technology, Inc | Conductive via of integrated circuitry, memory array comprising strings of memory cells, method of forming a conductive via of integrated circuitry, and method of forming a memory array comprising strings of memory cells |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020090816A1 (en) * | 2001-01-03 | 2002-07-11 | Ashby Carol I. | Cantilever epitaxial process |
WO2007074027A1 (en) * | 2005-12-27 | 2007-07-05 | Commissariat A L'energie Atomique | Simplified method of producing an epitaxially grown structure |
Family Cites Families (102)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH077826B2 (en) * | 1983-08-25 | 1995-01-30 | 忠弘 大見 | Semiconductor integrated circuit |
US4528047A (en) | 1984-06-25 | 1985-07-09 | International Business Machines Corporation | Method for forming a void free isolation structure utilizing etch and refill techniques |
US4820654A (en) * | 1987-12-09 | 1989-04-11 | Ncr Corporation | Isolation of regions in a CMOS structure using selective epitaxial growth |
US4993143A (en) * | 1989-03-06 | 1991-02-19 | Delco Electronics Corporation | Method of making a semiconductive structure useful as a pressure sensor |
US5849627A (en) * | 1990-02-07 | 1998-12-15 | Harris Corporation | Bonded wafer processing with oxidative bonding |
SG93197A1 (en) * | 1991-02-15 | 2002-12-17 | Canon Kk | Etching solution for etching porous silicon, etching method using the etching solution and method of preparing semiconductor member using the etching solution |
CA2061796C (en) * | 1991-03-28 | 2002-12-24 | Kalluri R. Sarma | High mobility integrated drivers for active matrix displays |
JPH05217824A (en) * | 1992-01-31 | 1993-08-27 | Canon Inc | Semiconductor wafer and its manufacture |
JP3416163B2 (en) * | 1992-01-31 | 2003-06-16 | キヤノン株式会社 | Semiconductor substrate and manufacturing method thereof |
JP3237888B2 (en) * | 1992-01-31 | 2001-12-10 | キヤノン株式会社 | Semiconductor substrate and method of manufacturing the same |
JP3542376B2 (en) * | 1994-04-08 | 2004-07-14 | キヤノン株式会社 | Manufacturing method of semiconductor substrate |
JP3532625B2 (en) * | 1994-10-06 | 2004-05-31 | 東芝マイクロエレクトロニクス株式会社 | Method for manufacturing semiconductor device |
JP3378135B2 (en) * | 1996-02-02 | 2003-02-17 | 三菱電機株式会社 | Semiconductor device and manufacturing method thereof |
US6509313B1 (en) * | 1996-02-28 | 2003-01-21 | Cornell Research Foundation, Inc. | Stimulation of immune response with low doses of cytokines |
JPH09298195A (en) * | 1996-05-08 | 1997-11-18 | Mitsubishi Electric Corp | Semiconductor device and its manufacture |
US5882532A (en) * | 1996-05-31 | 1999-03-16 | Hewlett-Packard Company | Fabrication of single-crystal silicon structures using sacrificial-layer wafer bonding |
FR2749977B1 (en) * | 1996-06-14 | 1998-10-09 | Commissariat Energie Atomique | QUANTUM WELL MOS TRANSISTOR AND METHODS OF MANUFACTURE THEREOF |
JP3320641B2 (en) * | 1996-09-13 | 2002-09-03 | 株式会社東芝 | Memory cell |
JP3602679B2 (en) * | 1997-02-26 | 2004-12-15 | 株式会社ルネサステクノロジ | Semiconductor device and manufacturing method thereof |
US5985742A (en) * | 1997-05-12 | 1999-11-16 | Silicon Genesis Corporation | Controlled cleavage process and device for patterned films |
JP3382840B2 (en) * | 1997-05-23 | 2003-03-04 | シャープ株式会社 | Method for manufacturing semiconductor device |
JP3222404B2 (en) * | 1997-06-20 | 2001-10-29 | 科学技術振興事業団 | Method and apparatus for forming insulating film on semiconductor substrate surface |
US6534380B1 (en) * | 1997-07-18 | 2003-03-18 | Denso Corporation | Semiconductor substrate and method of manufacturing the same |
EP0895282A3 (en) * | 1997-07-30 | 2000-01-26 | Canon Kabushiki Kaisha | Method of preparing a SOI substrate by using a bonding process, and SOI substrate produced by the same |
JP4301462B2 (en) | 1997-09-29 | 2009-07-22 | 川崎マイクロエレクトロニクス株式会社 | Field effect transistor |
DE69839780D1 (en) * | 1997-12-19 | 2008-09-04 | Advanced Micro Devices Inc | SILICON ON AN ISOLATOR CONFIGURATION WHICH IS COMPATIBLE WITH THE MASS CMOS ARCHITECTURE |
TW411589B (en) * | 1998-02-27 | 2000-11-11 | Mosel Vitelic Inc | Method of manufacturing capacitor bottom electrode and structure thereof |
JPH11317527A (en) * | 1998-05-06 | 1999-11-16 | Mitsubishi Electric Corp | Semiconductor device and manufacture thereof |
JP3762144B2 (en) * | 1998-06-18 | 2006-04-05 | キヤノン株式会社 | Method for manufacturing SOI substrate |
JP2000082679A (en) * | 1998-07-08 | 2000-03-21 | Canon Inc | Semiconductor substrate and production thereof |
US6093623A (en) * | 1998-08-04 | 2000-07-25 | Micron Technology, Inc. | Methods for making silicon-on-insulator structures |
US6071783A (en) * | 1998-08-13 | 2000-06-06 | Taiwan Semiconductor Manufacturing Company | Pseudo silicon on insulator MOSFET device |
US6177333B1 (en) * | 1999-01-14 | 2001-01-23 | Micron Technology, Inc. | Method for making a trench isolation for semiconductor devices |
US6268630B1 (en) * | 1999-03-16 | 2001-07-31 | Sandia Corporation | Silicon-on-insulator field effect transistor with improved body ties for rad-hard applications |
DE60030279T2 (en) | 1999-03-17 | 2007-08-30 | Mitsubishi Cable Industries, Ltd. | SEMICONDUCTOR BASIS, ITS MANUFACTURING METHOD AND SEMICONDUCTOR CRYSTAL MANUFACTURING METHOD |
US6433401B1 (en) * | 1999-04-06 | 2002-08-13 | Analog Devices Imi, Inc. | Microfabricated structures with trench-isolation using bonded-substrates and cavities |
EP1043770B1 (en) * | 1999-04-09 | 2006-03-01 | STMicroelectronics S.r.l. | Formation of buried cavities in a monocrystalline semiconductor wafer and a wafer |
US6358791B1 (en) * | 1999-06-04 | 2002-03-19 | International Business Machines Corporation | Method for increasing a very-large-scale-integrated (VLSI) capacitor size on bulk silicon and silicon-on-insulator (SOI) wafers and structure formed thereby |
TW515109B (en) * | 1999-06-28 | 2002-12-21 | Semiconductor Energy Lab | EL display device and electronic device |
US6204524B1 (en) * | 1999-07-14 | 2001-03-20 | Micron Technology, Inc. | CMOS imager with storage capacitor |
US6245636B1 (en) * | 1999-10-20 | 2001-06-12 | Advanced Micro Devices, Inc. | Method of formation of pseudo-SOI structures with direct contact of transistor body to the substrate |
TW473917B (en) * | 2000-03-07 | 2002-01-21 | United Microelectronics Corp | Step-like structure of silicon on insulation (SOI) |
JP2004501503A (en) * | 2000-03-07 | 2004-01-15 | マイクロン・テクノロジー・インコーポレーテッド | Method of forming almost flat insulating film in integrated circuit |
US6552396B1 (en) * | 2000-03-14 | 2003-04-22 | International Business Machines Corporation | Matched transistors and methods for forming the same |
US6406982B2 (en) * | 2000-06-05 | 2002-06-18 | Denso Corporation | Method of improving epitaxially-filled trench by smoothing trench prior to filling |
DE60023464T2 (en) | 2000-06-05 | 2006-07-20 | Stmicroelectronics S.R.L., Agrate Brianza | Process for the production of integrated chemical microreactors made of semiconductor material and integrated microreactor |
US6541861B2 (en) * | 2000-06-30 | 2003-04-01 | Kabushiki Kaisha Toshiba | Semiconductor device manufacturing method including forming step of SOI structure and semiconductor device having SOI structure |
JP2002076336A (en) * | 2000-09-01 | 2002-03-15 | Mitsubishi Electric Corp | Semiconductor device and soi substrate |
JP2002134375A (en) * | 2000-10-25 | 2002-05-10 | Canon Inc | Semiconductor base body and its manufacturing method, and surface shape measurement method of laminated base body |
DE10054484A1 (en) | 2000-11-03 | 2002-05-08 | Bosch Gmbh Robert | Micromechanical component and corresponding manufacturing method |
US6610615B1 (en) * | 2000-11-15 | 2003-08-26 | Intel Corporation | Plasma nitridation for reduced leakage gate dielectric layers |
US6583440B2 (en) * | 2000-11-30 | 2003-06-24 | Seiko Epson Corporation | Soi substrate, element substrate, semiconductor device, electro-optical apparatus, electronic equipment, method of manufacturing the soi substrate, method of manufacturing the element substrate, and method of manufacturing the electro-optical apparatus |
US20020134503A1 (en) * | 2001-03-20 | 2002-09-26 | Accucorp Technical Services, Inc. | Silicon wafers bonded to insulator substrates by low viscosity epoxy wicking |
US6410938B1 (en) * | 2001-04-03 | 2002-06-25 | Advanced Micro Devices, Inc. | Semiconductor-on-insulator device with nitrided buried oxide and method of fabricating |
US6403485B1 (en) * | 2001-05-02 | 2002-06-11 | Chartered Semiconductor Manufacturing Ltd | Method to form a low parasitic capacitance pseudo-SOI CMOS device |
US6509613B1 (en) * | 2001-05-04 | 2003-01-21 | Advanced Micro Devices, Inc. | Self-aligned floating body control for SOI device through leakage enhanced buried oxide |
US6512244B1 (en) * | 2001-05-07 | 2003-01-28 | Advanced Micro Devices, Inc. | SOI device with structure for enhancing carrier recombination and method of fabricating same |
US6664146B1 (en) * | 2001-06-01 | 2003-12-16 | Advanced Micro Devices, Inc. | Integration of fully depleted and partially depleted field effect transistors formed in SOI technology |
US7023989B1 (en) * | 2001-06-19 | 2006-04-04 | Cisco Technology, Inc. | Arrangement for delivering applications to a network enabled telephony device |
US6680243B1 (en) * | 2001-06-29 | 2004-01-20 | Lsi Logic Corporation | Shallow junction formation |
KR100421046B1 (en) * | 2001-07-13 | 2004-03-04 | 삼성전자주식회사 | Semiconductor device and method for manufacturing the same |
US6642579B2 (en) * | 2001-08-28 | 2003-11-04 | International Business Machines Corporation | Method of reducing the extrinsic body resistance in a silicon-on-insulator body contacted MOSFET |
US6808954B2 (en) * | 2001-09-07 | 2004-10-26 | Intel Corporation | Vacuum-cavity MEMS resonator |
US6531375B1 (en) * | 2001-09-18 | 2003-03-11 | International Business Machines Corporation | Method of forming a body contact using BOX modification |
US6870225B2 (en) * | 2001-11-02 | 2005-03-22 | International Business Machines Corporation | Transistor structure with thick recessed source/drain structures and fabrication process of same |
US20030116552A1 (en) | 2001-12-20 | 2003-06-26 | Stmicroelectronics Inc. | Heating element for microfluidic and micromechanical applications |
JP4277481B2 (en) * | 2002-05-08 | 2009-06-10 | 日本電気株式会社 | Semiconductor substrate manufacturing method and semiconductor device manufacturing method |
DE10221799A1 (en) * | 2002-05-15 | 2003-11-27 | Fujitsu Ltd | Semiconductor sensor for detecting target molecules and molecular change effects in protein recognition, analysis and quantification comprises a field effect transistor with a gate produced from SOI substrates |
KR100473733B1 (en) | 2002-10-14 | 2005-03-10 | 매그나칩 반도체 유한회사 | Semiconductor device and method for manufacturing the same |
DE60228856D1 (en) | 2002-12-04 | 2008-10-23 | St Microelectronics Srl | Process for producing microchannels in an integrated structure |
US7009272B2 (en) * | 2002-12-28 | 2006-03-07 | Intel Corporation | PECVD air gap integration |
US6936851B2 (en) | 2003-03-21 | 2005-08-30 | Tien Yang Wang | Semiconductor light-emitting device and method for manufacturing the same |
US7041575B2 (en) * | 2003-04-29 | 2006-05-09 | Micron Technology, Inc. | Localized strained semiconductor on insulator |
US7153753B2 (en) * | 2003-08-05 | 2006-12-26 | Micron Technology, Inc. | Strained Si/SiGe/SOI islands and processes of making same |
KR100559990B1 (en) * | 2003-12-30 | 2006-03-13 | 동부아남반도체 주식회사 | Active cell isolation body of a semiconductor device and method for forming the same |
KR100549007B1 (en) * | 2004-03-10 | 2006-02-02 | 삼성전자주식회사 | Transistors Of A Semiconductor Device Having A Punchthrough Protecton Layer And Methods Of Forming The Same |
US7157350B2 (en) | 2004-05-17 | 2007-01-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of forming SOI-like structure in a bulk semiconductor substrate using self-organized atomic migration |
US7755445B2 (en) | 2004-08-03 | 2010-07-13 | Banpil Photonics, Inc. | Multi-layered high-speed printed circuit boards comprised of stacked dielectric systems |
US7335963B2 (en) * | 2004-08-25 | 2008-02-26 | Micron Technology, Inc. | Light block for pixel arrays |
US7653281B2 (en) | 2004-09-02 | 2010-01-26 | Ramot At Tel-Aviv University Ltd. | Embedded channels, embedded waveguides and methods of manufacturing and using the same |
US7229895B2 (en) * | 2005-01-14 | 2007-06-12 | Micron Technology, Inc | Memory array buried digit line |
DE102005010821B4 (en) | 2005-03-07 | 2007-01-25 | Technische Universität Berlin | Method for producing a component |
PL3006458T3 (en) | 2005-07-29 | 2018-05-30 | The Government Of The United States Of America, As Represented By The Secretary Of Health And Human Services | Mutated pseudomonas exotoxins with reduced antigenicity |
JP4534041B2 (en) * | 2005-08-02 | 2010-09-01 | 株式会社デンソー | Manufacturing method of semiconductor device |
US7572572B2 (en) * | 2005-09-01 | 2009-08-11 | Micron Technology, Inc. | Methods for forming arrays of small, closely spaced features |
US7416943B2 (en) * | 2005-09-01 | 2008-08-26 | Micron Technology, Inc. | Peripheral gate stacks and recessed array gates |
US7393789B2 (en) * | 2005-09-01 | 2008-07-01 | Micron Technology, Inc. | Protective coating for planarization |
US7952158B2 (en) | 2007-01-24 | 2011-05-31 | Micron Technology, Inc. | Elevated pocket pixels, imaging devices and systems including the same and method of forming the same |
US7378704B2 (en) * | 2006-03-16 | 2008-05-27 | Micron Technology, Inc. | Semiconductor constructions, and methods of forming semiconductor constructions |
US20070249138A1 (en) | 2006-04-24 | 2007-10-25 | Micron Technology, Inc. | Buried dielectric slab structure for CMOS imager |
US7709341B2 (en) * | 2006-06-02 | 2010-05-04 | Micron Technology, Inc. | Methods of shaping vertical single crystal silicon walls and resulting structures |
US7625776B2 (en) * | 2006-06-02 | 2009-12-01 | Micron Technology, Inc. | Methods of fabricating intermediate semiconductor structures by selectively etching pockets of implanted silicon |
US7628932B2 (en) * | 2006-06-02 | 2009-12-08 | Micron Technology, Inc. | Wet etch suitable for creating square cuts in si |
US7557002B2 (en) * | 2006-08-18 | 2009-07-07 | Micron Technology, Inc. | Methods of forming transistor devices |
US7498265B2 (en) * | 2006-10-04 | 2009-03-03 | Micron Technology, Inc. | Epitaxial silicon growth |
US20080113483A1 (en) * | 2006-11-15 | 2008-05-15 | Micron Technology, Inc. | Methods of etching a pattern layer to form staggered heights therein and intermediate semiconductor device structures |
US7989322B2 (en) * | 2007-02-07 | 2011-08-02 | Micron Technology, Inc. | Methods of forming transistors |
JP2008277696A (en) * | 2007-05-07 | 2008-11-13 | Toshiba Corp | Method of manufacturing semiconductor device |
CN100565562C (en) | 2007-10-15 | 2009-12-02 | 北京派瑞根科技开发有限公司 | Electronic label safety identification method |
US7682944B2 (en) * | 2007-12-14 | 2010-03-23 | Cree, Inc. | Pendeo epitaxial structures and devices |
EP2816453B1 (en) | 2012-02-15 | 2019-03-27 | Murata Manufacturing Co., Ltd. | Touch-style input terminal |
FR3037442B1 (en) * | 2015-06-11 | 2018-07-06 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | SPAD PHOTODIODE COVERED BY A NETWORK |
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Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020090816A1 (en) * | 2001-01-03 | 2002-07-11 | Ashby Carol I. | Cantilever epitaxial process |
WO2007074027A1 (en) * | 2005-12-27 | 2007-07-05 | Commissariat A L'energie Atomique | Simplified method of producing an epitaxially grown structure |
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