WO2008118201A2 - Transparent and electrically conductive single wall carbon nanotube films - Google Patents
Transparent and electrically conductive single wall carbon nanotube films Download PDFInfo
- Publication number
- WO2008118201A2 WO2008118201A2 PCT/US2007/081770 US2007081770W WO2008118201A2 WO 2008118201 A2 WO2008118201 A2 WO 2008118201A2 US 2007081770 W US2007081770 W US 2007081770W WO 2008118201 A2 WO2008118201 A2 WO 2008118201A2
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- film
- swnt
- nanotubes
- nanotube
- swnts
- Prior art date
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
- B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
- B82B3/0009—Forming specific nanostructures
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/15—Nano-sized carbon materials
- C01B32/158—Carbon nanotubes
- C01B32/159—Carbon nanotubes single-walled
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/15—Nano-sized carbon materials
- C01B32/158—Carbon nanotubes
- C01B32/168—After-treatment
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/15—Nano-sized carbon materials
- C01B32/158—Carbon nanotubes
- C01B32/168—After-treatment
- C01B32/174—Derivatisation; Solubilisation; Dispersion in solvents
-
- D—TEXTILES; PAPER
- D01—NATURAL OR MAN-MADE THREADS OR FIBRES; SPINNING
- D01F—CHEMICAL FEATURES IN THE MANUFACTURE OF ARTIFICIAL FILAMENTS, THREADS, FIBRES, BRISTLES OR RIBBONS; APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OF CARBON FILAMENTS
- D01F9/00—Artificial filaments or the like of other substances; Manufacture thereof; Apparatus specially adapted for the manufacture of carbon filaments
- D01F9/08—Artificial filaments or the like of other substances; Manufacture thereof; Apparatus specially adapted for the manufacture of carbon filaments of inorganic material
- D01F9/12—Carbon filaments; Apparatus specially adapted for the manufacture thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/04—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of carbon-silicon compounds, carbon or silicon
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/81—Electrodes
- H10K30/82—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes
- H10K30/821—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes comprising carbon nanotubes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
- H10K85/221—Carbon nanotubes
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B2202/00—Structure or properties of carbon nanotubes
- C01B2202/02—Single-walled nanotubes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/70—Nanostructure
- Y10S977/734—Fullerenes, i.e. graphene-based structures, such as nanohorns, nanococoons, nanoscrolls or fullerene-like structures, e.g. WS2 or MoS2 chalcogenide nanotubes, planar C3N4, etc.
- Y10S977/742—Carbon nanotubes, CNTs
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/30—Self-sustaining carbon mass or layer with impregnant or other layer
Definitions
- This invention relates to the field of carbon nanotubes, and more particularly, to uniform films of single-walled carbon nanotubes (SWNTs) which are electrically conductive and optically transparent.
- SWNTs single-walled carbon nanotubes
- Carbon has four known general structures including diamond, graphite, fullerene and carbon nanotubes.
- Crystalline structure refers to the lattice arrangement of atoms.
- Carbon nanotubes refer to tubular structures grown with a single wall or multi-wall, which can be thought of as a rolled up sheet formed of a plurality of hexagons, the sheet formed by combining each carbon atom thereof with three neighboring carbon atoms.
- the carbon nanotubes have a diameter on the order of a few angstroms to a few hundred nanometers.
- Carbon nanotubes can function as either an electrical conductor, similar to a metal, or a semiconductor, according to the orientation of the hexagonal carbon atom lattice relative to the tube axis and the diameter of the tubes.
- Nanotubes can be uniformly suspended in solutions with the aid of stabilizing agents, such as surfactants and polymers, or by chemical modification of the nanotube sidewalls.
- stabilizing agents interfere with the required electrical continuity of the nanotube film.
- Stabilizing agents are generally electrical insulators. Once the solvent is evaporated, both the nanotubes and the stabilizing agent remain, the stabilizing agents interfering with the intertube electrical contact. In the case of chemical modification of the nanotube sidewall, the electrical conductivity of the nanotubes themselves is degraded.
- An optically transparent and electrically conductive single walled carbon nanotubes (SWNT) film comprises a plurality of interpenetrated single walled carbon nano tubes SWNTs, wherein for a 100 nm film the film has sufficient interpenetration to provide a 25 0 C sheet resistance of less than 200 ohm/sq.
- the film also provides at least 20% optical transmission throughout a wavelength range from 0.4 ⁇ m to 5 ⁇ m.
- a morphology of the film comprises stacked planes, the SWNTs having random orientation in the planes.
- the optical transmission can be at least 30% from 0.4 ⁇ m to 5 ⁇ m.
- the SWNT film can include at least one dopant.
- the sheet resistance is generally ⁇ 50 ohm/square.
- the dopant can selected from the group consisting of halogens and graphite intercalants, such as alkali metals.
- the film generally consists essentially of (> 99% per weight) SWNTs.
- FIG. 1 illustrates a scanned image of a transparent 300 nm thick SWNT film stretched across a hole on an aluminum plate, the film formed according to a preferred method for forming films according to the invention.
- the invention provides single wall carbon nanotube (SWNT) films which simultaneously exhibit high electrically conductivity, optical transparency and uniform optical density across their area, and methods for producing these films. Films according to the invention transmit light in both the visible and infrared portion of the electromagnetic spectrum.
- SWNT single wall carbon nanotube
- a first source is from the metallic nanotubes in the sample, which comprise about 1/3 of the nanotubes in SWNT material obtained commercially.
- a second source can come from semiconducting nanotubes in the sample, provided the semiconducting nanotubes are doped with a suitable charge transfer species.
- halogens such as bromine and iodine, or alkali metal atoms, as well as certain other atoms or molecules, can be used as charge transfer species.
- Films according to the present invention are generally essentially pure nanotube films, defined herein as films having at least 99% nanotubes by weight. However, the present invention includes nanotube composites, which can include a lower percentage of nanotubes, such as 80 or 90% by weight nanotubes, along with one or more generally electrically conductive materials.
- the film thickness can be tailored to range from a few tens of nanometers to several micrometers.
- the films produced using the invention have a substantially uniform nanotube density across their area which results in optical clarity.
- Optical transparency is enhanced for thin films(e.g. ⁇ 100 nm) as compared to thicker films (e.g. 3 ⁇ m).
- Film thicknesses in the upper range generally become opaque.
- optical transparency is believed to be enhanced by a low nanotube carrier density.
- a preferred method for forming electrically conductive and optical transparent SWNT films which exhibit uniform optical density across their area includes the step of dispersing a low concentration of SWNTs, such as 0.005 mg/ml, in a solution, such as an aqueous solution, containing a sufficient concentration of stabilizing agent to suspend the nanotubes.
- a low concentration of SWNTs such as 0.005 mg/ml
- a solution such as an aqueous solution
- stabilizing agent to suspend the nanotubes.
- Commercially available single walled carbon nanotubes such as from Carbon Nanotechnologies Incorporated, Houston, TX provide roughly 1/3 metallic nanotubes and 2/3 semiconducting nanotubes.
- the nanotubes used are purified to remove the large catalyst particles which are utilized in their formation.
- the stabilizing agent can comprise a variety of surfactants such as sodium dodecyl sulfate (SDS) and TRITON X- 100TM, or surface stabilizing polymers.
- SDS sodium dodecyl sulfate
- TRITON X- 100TM is manufactured by the Dow Chemical Corporation, MI (formerly the Union Carbide Corporation).
- TRITON X- 100TM is octylphenol ethylene oxide condensate and is also referred to as OCTOXYNOL-9TM. This material has a molecular weight of 625 amu.
- the SWNT solution is then applied to a porous material.
- the porous material preferably comprises a filter membrane material, such as polycarbonate or mixed cellulose ester.
- the filter membrane preferably provides the following features:
- composition that permits removal of the membrane material without disruption of the thin SWNT film, such as through dissolution of the membrane material in a solvent or digestion of the membrane material in an acid.
- the solution is then removed leaving the nanotube film deposited on the membrane surface.
- the resulting nanotube film is generally quite flexible.
- the solution is vacuum filtered off, with the SWNT film formed on the filter membrane surface. Any remaining surface stabilizing agent (e.g. surfactant) can be subsequently washed away and the film can then be allowed to dry.
- surface stabilizing agent e.g. surfactant
- the first bundles to land on the flat filtration membrane surface are forced to lie essentially parallel to the surface. Because the film generally grows at a uniform rate (with nanotube bundles lying across those deposited before them), subsequently deposited bundles take on the same planar orientations. The result is a film morphology wherein the nanotubes have random in plane orientations, but lie in stacked planes, with two-dimensional anisotropy similar to a biaxial oriented polymer film.
- the nanotubes preferentially tend to lie across one another when forced during the filtration process onto the membrane surface.
- the filtration results in films having a high degree of compositional, structural and thickness uniformity, which translates to a high degree of optical uniformity and clarity.
- the optical uniformity and clarity requires that variation in the film thickness averaged over regions that are half the wavelength of the visible radiation be small. Such variations are within 10% for the films according to the invention.
- the film In most applications once the nanotube film is formed on the porous material, such as a filtration membrane, the film must be removed from the typically opaque porous material using a suitable method. For example, one of the following exemplary methods may be used:
- Membrane dissolution can be used.
- the membrane can be soaked in acetone or methanol, which dissolves the membrane leaving the nanotube film floating in the solvent.
- the film can be transferred to fresh solvent, before being laid on a second layer for drying. The surface tension of the drying solvent ensures intimate contact between the nanotube film and the selected layer once they are dry.
- the nanotube side of the membrane can be pressed against a selected layer.
- a small quantity of a solution that does not dissolve the membrane such as purified water, can be placed between the selected layer and the nanotube film using surface tension to bring the two respective surfaces into intimate contact.
- the assembly including the membrane, the nanotube film and the selected layer can then be allowed to dry.
- the membrane can then be dissolved in a solvent in which it is soluble leaving the nanotube film disposed on the selected layer.
- a separation step is not necessarily required. For example, if the porous material selected is optically transparent in the wavelength range of interest, a separation step will not generally be necessary.
- a possible limitation of the above-described method is that the film area can only be as large as the vacuum filtration apparatus provides. This is generally not a major limitation since such an apparatus can be made arbitrarily large, or alternatively, the films can be formed using a continuous process as described below.
- the filtration membrane can roll off a spool on one side of a vacuum filtration frit and be wound up, with the nanotube film, on the other side of the frit.
- the filter frit can have a rectangular shape, the width of the membrane in its longer direction, but narrow in the direction of travel of the membrane.
- the filter funnel, with its lower opening matching the frit, containing the nanotube solution can sit over the frit, with a magnetorheological fluid to make the seal between the funnel and the membrane moving by underneath. Keeping the frit narrow can reduce the force due to suction on the membrane, allowing it to be more easily drawn through the device.
- the SWNT film thickness can be controlled by the SWNT concentration in suspension and the rate of travel of the membrane.
- the invention provides methods for forming electrically conductive and optically clear SWNT films.
- transparent electrode film deposition techniques for making non-SWNT films which can cover large areas and are compatible with thin film processing technologies for making displays, solar cells and similar devices.
- these transparent electrode film deposition methods are technologically demanding as they require expensive high vacuum equipment.
- a significant advantage of the invention is that optically transparent and electrically conductive SWNT films can be formed without the need for expensive high vacuum equipment.
- SWNT films formed using the invention exhibit high mechanical integrity, including a high degree of flexibility.
- SWNT films can be made freestanding, provided that the film has sufficient thickness. Above some thickness, which depends on the optical aperture desired, the films can be made freestanding. Freestanding films provide a clear aperture free of any supporting substrate.
- a 240 nm thick freestanding SWNT film has been demonstrated over a 1 cm 2 aperture. Such a film can be supported on a frame containing a hole, which when coated by the transparent nanotube film comprises an optically clear aperture.
- Figure 1 shows a back lit SWNT film according to the invention stretched across a hole on an aluminum plate.
- Figure 2 is a scanned image demonstrating the transparency and clarity of a larger diameter, but thinner ( ⁇ 90 nm) SWNT film mounted on a plastic sheet, such as a biaxially- oriented polyethylene terephthalate (boPET) polyester film marketed as MYLAR®.
- a plastic sheet such as a biaxially- oriented polyethylene terephthalate (boPET) polyester film marketed as MYLAR®.
- the resistance of a similar film measured on an electrically insulating support (MYLAR®) exhibited a sheet resistance of about 35 ohms/square when acid doped and about 175 ohms/square when de-doped.
- De-doped films generally provide greater transmittance in the IR as compared to doped films. This is a very high electrical conductivity given the optical transparency, particularly since high levels of optical transmission were found to continue well into the IR portion of the electromagnetic spectrum.
- Figure 3 shows the transmission spectrum experimentally obtained for 50 nm and 240 nm thick SWNT films formed according to an embodiment of the invention showing high transmittance in both the visible and the NIR range.
- the surface resistance when acid doped is seen to be about 60 ohms/square and when de-doped by baking to 600 0 C in inert gas (gray spectral curve ) is about 300 Ohms/square.
- the transmittance spectrum for the doped 50 nm thick film is seen to be 70% or greater over the visible spectrum (0.4 to 0.75 microns).
- the depth of transparency into the IR is believed to be primarily limited by the free carrier absorption of the metallic nanotubes which make up about 1/3 of the film. Should pure or increasingly semiconducting SWNTs become available, the films can remain optically transparent further into the IR, such as to a wavelength of at least 40 ⁇ m as compared to more metallic nanotubes. As noted above, semiconducting films can be made electrically conducting by charge transfer doping, such as bromine or iodine doping. [0037] The absorbance on the short wavelength side of the peak labeled Ml in Fig. 3 is due to many combined interband transitions. A characteristic feature of the nanotubes is a sharp Van Hove (VH) singularity structure in the electronic density of states.
- VH Van Hove
- the absorbance feature labeled Ml arises due to transitions from the highest occupied valence band VH singularity to the lowest empty conduction band VH singularity for the metallic nanotubes in the sample.
- the absorbance features labeled Sl and S2 arise due to transitions from the highest valence VH singularity to the lowest conduction VH singularity and the second highest to the second lowest valence-to-conduction band VH singularities for the semiconducting nanotubes in the sample, respectively.
- the absorption just beginning at a wavelength of about 2.4 ⁇ m in the unbaked sample and at a wavelength of about 4 ⁇ m in the baked sample is believed to be ascribed to free carriers.
- the charge transfer doping by the acid is a hole dopant meaning that electrons are removed from the nanotubes and transferred to the dopant molecules which function as electron acceptors.
- This depletion of the valence band electrons from the VH singularities results in the smaller absorbance feature seen at Sl in the unbaked (doped) versus the baked (dedoped) spectra shown in Fig. 3.
- Another consequence is the enhanced free carrier absorption in the IR for the doped relative to the undoped case, arising because of hole carriers injected into the semiconducting nanotubes. This provides evidence that the absorbance seen for wavelengths above 4 microns in the baked (dedoped) sample is largely due to the free carrier absorption in the metallic nanotubes alone.
- a SWNT film comprised of only semiconducting nanotubes would be transparent much further into the IR.
- metallic nanotubes in the SWNT film a loss of electrical conductivity would result.
- semiconducting nanotubes can be doped to become more electrically conductive.
- electrical conductivity can be enhanced by controlled doping with some accompanying loss of the additional depth of transparency into the IR.
- controlled doping could be effected by exposure of the nanotubes to other air stable hole dopants besides nitric acid, such as vapors of bromine or iodine.
- electron donor dopants such as the alkali metals could be used.
- SWNT films formed from presently available nanotube sources which include about 1/3 metallic nanotubes, doping provides some measure of control over the transparency and electrical conductivity of the resulting films.
- SWNT films produced using the invention can be used for a variety of applications.
- SWNT films formed using the invention can be used for solar cells, video displays, solid state light sources, receivers, or applications requiring an electrically conductive layer which is also optically transparent.
- the SWNT films formed using the invention provide at least two significant advantages over conventional optically transparent electrode materials.
- First, the SWNT films provide good optical transmission in the 0.4 to 5 ⁇ m spectral range as well as high electrical conductivity.
- Second, the films formed are compatible with many other materials, such as upcoming polymer active layers in a wide variety of devices.
- a possible additional advantage for some applications is that by obtaining purified SWNTs or adding a purification step, SWNTs essentially free of metal catalyst(s) can be provided for filtration according to the invention, and as a result, resulting films according to the invention can tolerate 450 0 C in air or over 1000 0 C in inert atmospheres.
- SWNT films can provide significant advantages.
- One example is in transparent spectrochemical electrodes, where the inertness of the nanotubes may provide added advantages.
- Optical modulators may also be formed based on the thin SWNT films produced using the invention.
- the SWNT film can provide one electrode of a capacitor like device consisting of indium tin oxide (ITO) on glass covered with a thin aluminum oxide layer covered with the thin transparent SWNT film.
- ITO indium tin oxide
- the SWNT film charges slightly, thus changing its optical transmittance over a particular absorption band of the SWNT film.
- the invention can also be used to form chemical sensors.
- the optical properties of the SWNT films can change in the presence of halogens or alkali ions, or possibly other species. It may be possible to distinguish the presence of particular species from others through identification of particular resulting optical properties of the SWNT film in the presence of particular species. For example, by monitoring transmission levels through a SWNT film formed using the invention, the presence of certain chemicals can be detected.
- One advantage of the electrical conductivity of the films in such applications is that by driving sufficient current through them they can be self heated, desorbing the chemical species after it has been detected. Such sensitivity recovery is enhanced by making the film freestanding over the optical aperture allowing efficient self heating at lower current.
Abstract
Description
Claims
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009533521A JP2010506824A (en) | 2006-10-19 | 2007-10-18 | Transparent conductive single-walled carbon nanotube film |
CA002667048A CA2667048A1 (en) | 2006-10-19 | 2007-10-18 | Transparent and electrically conductive single wall carbon nanotube films |
EP07874463A EP2082404A2 (en) | 2006-10-19 | 2007-10-18 | Transparent and electrically conductive single wall carbon nanotube films |
CN2007800466692A CN101578666B (en) | 2006-10-19 | 2007-10-18 | Transparent and electrically conductive single wall carbon nanotube |
KR1020097010034A KR101434698B1 (en) | 2006-10-19 | 2007-10-18 | Transparent and electrically conductive single wall carbon nanotube films |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/583,545 US7776444B2 (en) | 2002-07-19 | 2006-10-19 | Transparent and electrically conductive single wall carbon nanotube films |
US11/583,545 | 2006-10-19 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2008118201A2 true WO2008118201A2 (en) | 2008-10-02 |
WO2008118201A3 WO2008118201A3 (en) | 2008-12-04 |
Family
ID=39740061
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2007/081770 WO2008118201A2 (en) | 2006-10-19 | 2007-10-18 | Transparent and electrically conductive single wall carbon nanotube films |
Country Status (8)
Country | Link |
---|---|
US (2) | US7776444B2 (en) |
EP (1) | EP2082404A2 (en) |
JP (1) | JP2010506824A (en) |
KR (1) | KR101434698B1 (en) |
CN (1) | CN101578666B (en) |
CA (1) | CA2667048A1 (en) |
SG (1) | SG175653A1 (en) |
WO (1) | WO2008118201A2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012516277A (en) * | 2009-01-28 | 2012-07-19 | カナトゥ オイ | Structure containing high aspect ratio molecular structure and method for producing the same |
Families Citing this family (36)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4864093B2 (en) | 2005-07-28 | 2012-01-25 | ナノコンプ テクノロジーズ インコーポレイテッド | Systems and methods for the formation and harvesting of nanofibrous materials |
SG174798A1 (en) * | 2006-09-12 | 2011-10-28 | Univ Florida | Highly accessible, nanotube electrodes for large surface area contact applications |
US20080187725A1 (en) * | 2006-12-28 | 2008-08-07 | Exatec, Llc | Functional layers for polycarbonate glazing |
US20080292979A1 (en) * | 2007-05-22 | 2008-11-27 | Zhe Ding | Transparent conductive materials and coatings, methods of production and uses thereof |
US20090045061A1 (en) * | 2007-06-20 | 2009-02-19 | New Jersey Institute Of Technology | Nanotube Devices and Vertical Field Effect Transistors |
FI20075482L (en) * | 2007-06-25 | 2008-12-26 | Canatu Oy | Fiber networks and method and device for continuous or batch production of fiber networks |
US8123745B2 (en) * | 2007-06-29 | 2012-02-28 | Biosense Webster, Inc. | Ablation catheter with optically transparent, electrically conductive tip |
CN101842446A (en) * | 2007-08-29 | 2010-09-22 | 西北大学 | Transparent electrical conductors prepared from sorted carbon nanotubes and methods of preparing same |
US20090056589A1 (en) * | 2007-08-29 | 2009-03-05 | Honeywell International, Inc. | Transparent conductors having stretched transparent conductive coatings and methods for fabricating the same |
US20090169819A1 (en) * | 2007-10-05 | 2009-07-02 | Paul Drzaic | Nanostructure Films |
EP2219995B1 (en) * | 2007-10-26 | 2017-08-23 | Battelle Memorial Institute | Carbon nanotube films and methods of forming films of carbon nanotubes by dispersing in a superacid |
KR101435999B1 (en) * | 2007-12-07 | 2014-08-29 | 삼성전자주식회사 | Reduced graphene oxide doped by dopant, thin layer and transparent electrode |
US7727578B2 (en) | 2007-12-27 | 2010-06-01 | Honeywell International Inc. | Transparent conductors and methods for fabricating transparent conductors |
US7642463B2 (en) | 2008-01-28 | 2010-01-05 | Honeywell International Inc. | Transparent conductors and methods for fabricating transparent conductors |
US7960027B2 (en) * | 2008-01-28 | 2011-06-14 | Honeywell International Inc. | Transparent conductors and methods for fabricating transparent conductors |
CN101508432A (en) * | 2008-02-14 | 2009-08-19 | 索尼株式会社 | Method for producing carbon nano-tube film, carbon nano-tube film with laminated structure, anode, organic LED and carbon nano-tube element |
WO2009137722A1 (en) * | 2008-05-07 | 2009-11-12 | Nanocomp Technologies, Inc. | Carbon nanotube-based coaxial electrical cables and wiring harness |
KR20100102381A (en) * | 2009-03-11 | 2010-09-24 | 고려대학교 산학협력단 | Forming method for electronic material layer and method of fabricating electronic device |
RU2011137967A (en) | 2009-04-30 | 2013-06-10 | Юниверсити Оф Флорида Рисерч Фаундейшн Инк. | Air cathodes based on single-walled carbon nanotubes |
KR20110061909A (en) * | 2009-12-02 | 2011-06-10 | 삼성전자주식회사 | Graphene doped by dopant and device using the same |
FR2952366A1 (en) * | 2010-04-07 | 2011-05-13 | Commissariat Energie Atomique | Developing carbon nanotubes for e.g. LCD and organic LEDs, comprises depositing a network of carbon nanotubes on a substrate, and irradiating the carbon nanotubes network by laser impulsion having specified power |
EP2439779B1 (en) | 2010-10-05 | 2014-05-07 | Samsung Electronics Co., Ltd. | Transparent Electrode Comprising Doped Graphene, Process of Preparing the Same, and Display Device and Solar Cell Comprising the Electrode |
CN103403935B (en) | 2010-12-17 | 2016-08-24 | 佛罗里达大学研究基金会有限公司 | The oxidation of hydrogen based on carbon film and generation |
EP2681153A4 (en) * | 2011-02-28 | 2015-07-22 | Univ Rice William M | Doped multiwalled carbon nanotube fibers and methods of making the same |
AU2012240367A1 (en) * | 2011-04-04 | 2013-11-07 | University Of Florida Research Foundation, Inc. | Nanotube dispersants and dispersant free nanotube films therefrom |
WO2013043148A1 (en) | 2011-09-19 | 2013-03-28 | Hewlett-Packard Development Company, L.P. | Sensing water vapour |
US8808792B2 (en) * | 2012-01-17 | 2014-08-19 | Northrop Grumman Systems Corporation | Carbon nanotube conductor with enhanced electrical conductivity |
US20150228371A1 (en) * | 2012-07-30 | 2015-08-13 | National Institute Of Advanced Industrial Science And Techmology | Method for producing electrically conductive thin film, and electrically conductive thin film produced by said method |
US9378900B2 (en) | 2013-07-05 | 2016-06-28 | Her Majesty The Queen In Right Of Canada, Represented By The Minister Of National Defence | Solid electrochemical supercapacitor |
EP3071516A4 (en) * | 2013-11-20 | 2017-06-28 | University of Florida Research Foundation, Inc. | Carbon dioxide reduction over carbon-containing materials |
CN105097429B (en) * | 2014-04-24 | 2018-03-02 | 清华大学 | The preparation method of carbon nano-tube compound film |
WO2017044805A1 (en) | 2015-09-11 | 2017-03-16 | University Of Florida Research Foundation, Incorporated | Light emitting phototransistor |
EP3347915A4 (en) | 2015-09-11 | 2019-05-08 | University of Florida Research Foundation, Inc. | Vertical field-effect transistor |
US10581082B2 (en) | 2016-11-15 | 2020-03-03 | Nanocomp Technologies, Inc. | Systems and methods for making structures defined by CNT pulp networks |
KR102316218B1 (en) * | 2017-10-13 | 2021-10-22 | 저지앙 대학 | Independent self-supporting graphene film and method for manufacturing the same |
CN114747037A (en) * | 2020-01-31 | 2022-07-12 | 日本瑞翁株式会社 | Photoelectric conversion element and method for manufacturing same |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL9000268A (en) | 1990-02-05 | 1991-09-02 | Oce Nederland Bv | Doped tin oxide powder, a process for its preparation, and its use in electrically conductive or anti-static coatings. |
FR2704848B1 (en) | 1993-05-03 | 1995-07-21 | Prod Chim Auxil Synthese | Liquid precursor for the production of fluorine-doped tin oxide coatings and corresponding coating process. |
JPH0822733B2 (en) | 1993-08-04 | 1996-03-06 | 工業技術院長 | Separation and purification method of carbon nanotube |
DE4329651A1 (en) | 1993-09-03 | 1995-03-09 | Goldschmidt Ag Th | Process for the production of electrically conductive, infrared reflecting layers on glass, glass ceramic or enamel surfaces |
US6369934B1 (en) * | 1996-05-30 | 2002-04-09 | Midwest Research Institute | Self bleaching photoelectrochemical-electrochromic device |
US5853877A (en) | 1996-05-31 | 1998-12-29 | Hyperion Catalysis International, Inc. | Method for disentangling hollow carbon microfibers, electrically conductive transparent carbon microfibers aggregation film amd coating for forming such film |
US6683783B1 (en) * | 1997-03-07 | 2004-01-27 | William Marsh Rice University | Carbon fibers formed from single-wall carbon nanotubes |
JP4746183B2 (en) | 1998-09-18 | 2011-08-10 | ウィリアム・マーシュ・ライス・ユニバーシティ | Chemical derivatization of single-walled carbon nanotubes and the use of derivatized nanotubes to facilitate solvation |
US6331262B1 (en) * | 1998-10-02 | 2001-12-18 | University Of Kentucky Research Foundation | Method of solubilizing shortened single-walled carbon nanotubes in organic solutions |
CN100457609C (en) * | 2000-11-13 | 2009-02-04 | 国际商业机器公司 | Manufacturing method and application of single wall carbon nano tube |
CN1541185A (en) * | 2000-11-13 | 2004-10-27 | �Ҵ���˾ | Crystals comprising single-walled carbon nanotubes |
US6782154B2 (en) * | 2001-02-12 | 2004-08-24 | Rensselaer Polytechnic Institute | Ultrafast all-optical switch using carbon nanotube polymer composites |
CA2442310A1 (en) * | 2001-03-26 | 2002-10-03 | Eikos, Inc. | Coatings containing carbon nanotubes |
US8029734B2 (en) * | 2001-03-29 | 2011-10-04 | The Board Of Trustees Of The Leland Stanford Junior University | Noncovalent sidewall functionalization of carbon nanotubes |
WO2004009884A1 (en) * | 2002-07-19 | 2004-01-29 | University Of Florida | Transparent electrodes from single wall carbon nanotubes |
US9365728B2 (en) * | 2006-03-09 | 2016-06-14 | Battelle Memorial Institute | Modified carbon nanotubes and methods of forming carbon nanotubes |
-
2006
- 2006-10-19 US US11/583,545 patent/US7776444B2/en not_active Expired - Lifetime
-
2007
- 2007-10-18 CA CA002667048A patent/CA2667048A1/en not_active Abandoned
- 2007-10-18 EP EP07874463A patent/EP2082404A2/en not_active Withdrawn
- 2007-10-18 SG SG2011076262A patent/SG175653A1/en unknown
- 2007-10-18 KR KR1020097010034A patent/KR101434698B1/en active IP Right Grant
- 2007-10-18 WO PCT/US2007/081770 patent/WO2008118201A2/en active Application Filing
- 2007-10-18 JP JP2009533521A patent/JP2010506824A/en active Pending
- 2007-10-18 CN CN2007800466692A patent/CN101578666B/en active Active
-
2010
- 2010-07-07 US US12/831,798 patent/US7972699B2/en not_active Expired - Fee Related
Non-Patent Citations (1)
Title |
---|
None |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012516277A (en) * | 2009-01-28 | 2012-07-19 | カナトゥ オイ | Structure containing high aspect ratio molecular structure and method for producing the same |
US9133022B2 (en) | 2009-01-28 | 2015-09-15 | Canatu Oy | Structures comprising high aspect ratio molecular structures and methods of fabrication |
Also Published As
Publication number | Publication date |
---|---|
KR101434698B1 (en) | 2014-08-27 |
EP2082404A2 (en) | 2009-07-29 |
SG175653A1 (en) | 2011-11-28 |
WO2008118201A3 (en) | 2008-12-04 |
US20100272981A1 (en) | 2010-10-28 |
US7776444B2 (en) | 2010-08-17 |
JP2010506824A (en) | 2010-03-04 |
CN101578666A (en) | 2009-11-11 |
US20070141345A1 (en) | 2007-06-21 |
CN101578666B (en) | 2012-02-29 |
CA2667048A1 (en) | 2008-10-02 |
KR20090074803A (en) | 2009-07-07 |
US7972699B2 (en) | 2011-07-05 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US7972699B2 (en) | Transparent and electrically conductive single wall carbon nanotube films | |
US7261852B2 (en) | Transparent electrodes from single wall carbon nanotubes | |
Gupta et al. | Carbon nanotubes: Synthesis, properties and engineering applications | |
EP1996512B1 (en) | Doped carbon nanotube composition | |
US8540542B2 (en) | Transparent conductive nano-composites | |
US7056455B2 (en) | Process for the preparation of nanostructured materials | |
JP5034544B2 (en) | Carbon nanotube aggregate and method for producing the same | |
US7956345B2 (en) | CNT devices, low-temperature fabrication of CNT and CNT photo-resists | |
US8513804B2 (en) | Nanotube-based electrodes | |
Esconjauregui et al. | Efficient transfer doping of carbon nanotube forests by MoO3 | |
Kim et al. | Double-walled carbon nanotubes: synthesis, structural characterization, and application | |
KR20120120363A (en) | Fullerene-doped nanostructures and methods therefor | |
US8309226B2 (en) | Electrically conductive transparent coatings comprising organized assemblies of carbon and non-carbon compounds | |
KR20130091758A (en) | Fabrication method of composite carbon nanotube fibers/yarns | |
Hou et al. | Applications of carbon nanotubes and graphene produced by chemical vapor deposition | |
KR101878735B1 (en) | Process for preparing graphene sheet | |
US20130025662A1 (en) | Water Soluble Dopant for Carbon Films | |
Cui et al. | Optimizing reaction condition for synthesizing spinnable carbon nanotube arrays by chemical vapor deposition | |
JP4337396B2 (en) | Anisotropic polymer composite film | |
Tian et al. | Improved resistance stability of transparent conducting films prepared by PEDOT: PSS hybrid CNTs treated by a two-step method | |
Umnov et al. | Field emission from flexible arrays of carbon nanotubes | |
US11935668B2 (en) | Conductive material, and conductive film and solar cell using same | |
Nakayama et al. | Photovoltaic device using composite films of polymer and carbon nanotube cut by acid treatment | |
Patole et al. | Filtration-wet transferred transparent conducting films of mm long carbon nanotubes grown using water-assisted chemical vapor deposition | |
Ye et al. | Fabrication of carbon nanotubes field emission backlight unit applied to LCD |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
WWE | Wipo information: entry into national phase |
Ref document number: 200780046669.2 Country of ref document: CN |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2007874463 Country of ref document: EP |
|
ENP | Entry into the national phase |
Ref document number: 2009533521 Country of ref document: JP Kind code of ref document: A |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2667048 Country of ref document: CA |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2563/CHENP/2009 Country of ref document: IN |
|
WWE | Wipo information: entry into national phase |
Ref document number: 1020097010034 Country of ref document: KR |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 07874463 Country of ref document: EP Kind code of ref document: A2 |