WO2008137439A3 - Image sensing cell with floating charge storage, device, method of operation, and method of manufacture - Google Patents

Image sensing cell with floating charge storage, device, method of operation, and method of manufacture Download PDF

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Publication number
WO2008137439A3
WO2008137439A3 PCT/US2008/061941 US2008061941W WO2008137439A3 WO 2008137439 A3 WO2008137439 A3 WO 2008137439A3 US 2008061941 W US2008061941 W US 2008061941W WO 2008137439 A3 WO2008137439 A3 WO 2008137439A3
Authority
WO
WIPO (PCT)
Prior art keywords
image sensing
sensing cell
store element
manufacture
charge store
Prior art date
Application number
PCT/US2008/061941
Other languages
French (fr)
Other versions
WO2008137439A2 (en
Inventor
Madhu P Vora
Original Assignee
Dsm Solutions Inc
Madhu P Vora
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dsm Solutions Inc, Madhu P Vora filed Critical Dsm Solutions Inc
Publication of WO2008137439A2 publication Critical patent/WO2008137439A2/en
Publication of WO2008137439A3 publication Critical patent/WO2008137439A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14679—Junction field effect transistor [JFET] imagers; static induction transistor [SIT] imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof

Abstract

An image sensing device includes one or more image sensing cells. Each image sensing cell has a charge store element (102, 204) formed from a semiconductor material doped to a first conductivity type. The charge store element is in contact with a channel region (102, 208) formed from a semiconductor material of a second conductivity type. The charge store element has one or more surfaces for exposure to an image spurce. Each image sensing cell also includes a charge electrode (202) formed from a semiconductor material of the first conductivity type that is separated from the charge store element by the channel region (208). In addition, one or more current detection electrodes (206) are included in each image sensing cell. A current detection electrode passes a current flowing through the channel region in a read operation. Such an image sensing cell can be compact in size and/or have a large image sensing area.
PCT/US2008/061941 2007-05-01 2008-04-30 Image sensing cell with floating charge storage, device, method of operation, and method of manufacture WO2008137439A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/799,571 US7727821B2 (en) 2007-05-01 2007-05-01 Image sensing cell, device, method of operation, and method of manufacture
US11/799,571 2007-05-01

Publications (2)

Publication Number Publication Date
WO2008137439A2 WO2008137439A2 (en) 2008-11-13
WO2008137439A3 true WO2008137439A3 (en) 2009-01-29

Family

ID=39810290

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2008/061941 WO2008137439A2 (en) 2007-05-01 2008-04-30 Image sensing cell with floating charge storage, device, method of operation, and method of manufacture

Country Status (3)

Country Link
US (1) US7727821B2 (en)
TW (1) TW200903791A (en)
WO (1) WO2008137439A2 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5513326B2 (en) * 2010-09-07 2014-06-04 キヤノン株式会社 Imaging device and imaging apparatus
CN105830219B (en) * 2013-12-25 2019-01-01 佳能株式会社 Imaging device, imaging system and the method for manufacturing imaging device
CN110213540A (en) * 2019-06-04 2019-09-06 北京合锐赛尔电力科技股份有限公司 Line feed terminals control method based on image recognition on-pole switch state acquisition
TWI735349B (en) * 2020-10-13 2021-08-01 友達光電股份有限公司 Light detecting device and detecting method thereof

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Patent Citations (4)

* Cited by examiner, † Cited by third party
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US3964083A (en) * 1973-06-14 1976-06-15 U.S. Philips Corporation Punchthrough resetting jfet image sensor
US5298778A (en) * 1992-05-15 1994-03-29 Sony Corporation Solid state image pickup device
US20040217395A1 (en) * 2003-03-10 2004-11-04 Seiko Epson Corporation Solid-state imaging device
DE102004004283A1 (en) * 2004-01-28 2005-08-25 MAX-PLANCK-Gesellschaft zur Förderung der Wissenschaften e.V. Semiconductor structure

Also Published As

Publication number Publication date
WO2008137439A2 (en) 2008-11-13
US7727821B2 (en) 2010-06-01
TW200903791A (en) 2009-01-16
US20080272414A1 (en) 2008-11-06

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