WO2009005624A3 - Inductively coupled dual zone processing chamber with single planar antenna - Google Patents

Inductively coupled dual zone processing chamber with single planar antenna Download PDF

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Publication number
WO2009005624A3
WO2009005624A3 PCT/US2008/007821 US2008007821W WO2009005624A3 WO 2009005624 A3 WO2009005624 A3 WO 2009005624A3 US 2008007821 W US2008007821 W US 2008007821W WO 2009005624 A3 WO2009005624 A3 WO 2009005624A3
Authority
WO
WIPO (PCT)
Prior art keywords
processing chamber
support
substrate
substrate support
inductively coupled
Prior art date
Application number
PCT/US2008/007821
Other languages
French (fr)
Other versions
WO2009005624A2 (en
Inventor
Sanket P Sant
Original Assignee
Lam Res Corp
Sanket P Sant
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Res Corp, Sanket P Sant filed Critical Lam Res Corp
Priority to CN2008800223267A priority Critical patent/CN101720500B/en
Priority to JP2010514774A priority patent/JP5519498B2/en
Priority to KR1020107002086A priority patent/KR101495940B1/en
Publication of WO2009005624A2 publication Critical patent/WO2009005624A2/en
Publication of WO2009005624A3 publication Critical patent/WO2009005624A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma

Abstract

A dual zone plasma processing chamber is provided. The plasma processing chamber includes a first substrate support having a first support surface adapted to support a first substrate within the processing chamber and a second substrate support having a second support surface adapted to support a second substrate within the processing chamber. One or more gas sources in fluid communication with one or more gas distribution members supply process gas to a first zone adjacent to the first substrate support and a second zone adjacent to the second substrate support. A radio-frequency (RF) antenna adapted to inductively couple RF energy into the interior of the processing chamber and energize the process gas into a plasma state in the first and second zones. The antenna is located between the first substrate support and the second substrate support.
PCT/US2008/007821 2007-06-29 2008-06-24 Inductively coupled dual zone processing chamber with single planar antenna WO2009005624A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN2008800223267A CN101720500B (en) 2007-06-29 2008-06-24 Inductively coupled dual zone processing chamber with single planar antenna
JP2010514774A JP5519498B2 (en) 2007-06-29 2008-06-24 Inductively coupled dual zone processing chamber with a single planar antenna
KR1020107002086A KR101495940B1 (en) 2007-06-29 2008-06-24 Inductively coupled dual zone processing chamber with single planar antenna

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/819,898 2007-06-29
US11/819,898 US7972471B2 (en) 2007-06-29 2007-06-29 Inductively coupled dual zone processing chamber with single planar antenna

Publications (2)

Publication Number Publication Date
WO2009005624A2 WO2009005624A2 (en) 2009-01-08
WO2009005624A3 true WO2009005624A3 (en) 2009-02-19

Family

ID=40161116

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2008/007821 WO2009005624A2 (en) 2007-06-29 2008-06-24 Inductively coupled dual zone processing chamber with single planar antenna

Country Status (6)

Country Link
US (2) US7972471B2 (en)
JP (1) JP5519498B2 (en)
KR (1) KR101495940B1 (en)
CN (1) CN101720500B (en)
TW (1) TWI416623B (en)
WO (1) WO2009005624A2 (en)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8318131B2 (en) 2008-01-07 2012-11-27 Mcalister Technologies, Llc Chemical processes and reactors for efficiently producing hydrogen fuels and structural materials, and associated systems and methods
US9188086B2 (en) 2008-01-07 2015-11-17 Mcalister Technologies, Llc Coupled thermochemical reactors and engines, and associated systems and methods
US8441361B2 (en) 2010-02-13 2013-05-14 Mcallister Technologies, Llc Methods and apparatuses for detection of properties of fluid conveyance systems
US8318269B2 (en) * 2009-02-17 2012-11-27 Mcalister Technologies, Llc Induction for thermochemical processes, and associated systems and methods
US20110203776A1 (en) * 2009-02-17 2011-08-25 Mcalister Technologies, Llc Thermal transfer device and associated systems and methods
TW201511122A (en) * 2009-09-25 2015-03-16 Applied Materials Inc Method and apparatus for high efficiency gas dissociation in inductive coupled plasma reactor
WO2011059749A2 (en) * 2009-10-28 2011-05-19 Applied Materials, Inc. Vertically integrated processing chamber
US8397739B2 (en) 2010-01-08 2013-03-19 Applied Materials, Inc. N-channel flow ratio controller calibration
AU2011216244A1 (en) 2010-02-13 2012-09-06 Mcalister Technologies, Llc Reactor vessels with transmissive surfaces for producing hydrogen-based fuels and structural elements, and associated systems and methods
CA2789691A1 (en) * 2010-02-13 2011-08-18 Mcalister Technologies, Llc Chemical reactors with re-radiating surfaces and associated systems and methods
KR101796656B1 (en) * 2010-04-30 2017-11-13 어플라이드 머티어리얼스, 인코포레이티드 Vertical inline cvd system
KR101205242B1 (en) * 2010-04-30 2012-11-27 주식회사 테라세미콘 Plasma processing apparatus
DE102011013467A1 (en) * 2011-03-09 2012-09-13 Manz Ag Apparatus and method for plasma enhanced treatment of at least two substrates
US20120279943A1 (en) * 2011-05-03 2012-11-08 Applied Materials, Inc. Processing chamber with cooled gas delivery line
WO2013025650A1 (en) 2011-08-12 2013-02-21 Mcalister Technologies, Llc Mobile transport platforms for producing hydrogen and structural materials and associated systems and methods
WO2013025659A1 (en) 2011-08-12 2013-02-21 Mcalister Technologies, Llc Reducing and/or harvesting drag energy from transport vehicles, includings for chemical reactors, and associated systems and methods
US8734546B2 (en) 2011-08-12 2014-05-27 Mcalister Technologies, Llc Geothermal energization of a non-combustion chemical reactor and associated systems and methods
US8911703B2 (en) 2011-08-12 2014-12-16 Mcalister Technologies, Llc Reducing and/or harvesting drag energy from transport vehicles, including for chemical reactors, and associated systems and methods
EP2742207A4 (en) 2011-08-12 2016-06-29 Mcalister Technologies Llc Systems and methods for extracting and processing gases from submerged sources
US8821602B2 (en) 2011-08-12 2014-09-02 Mcalister Technologies, Llc Systems and methods for providing supplemental aqueous thermal energy
CN204570033U (en) * 2012-01-24 2015-08-19 应用材料公司 Base board carrier
CN104080947B (en) * 2012-01-27 2016-08-24 应用材料公司 Sectional antenna assembly
US20130206068A1 (en) * 2012-02-13 2013-08-15 Jozef Kudela Linear pecvd apparatus
US9437400B2 (en) 2012-05-02 2016-09-06 Lam Research Corporation Insulated dielectric window assembly of an inductively coupled plasma processing apparatus
KR101209298B1 (en) * 2012-07-13 2012-12-06 주식회사한국큐텍 Etching chamber for semiconductor led manufacturing
US8669538B1 (en) 2013-03-12 2014-03-11 Varian Semiconductor Equipment Associates, Inc. Method of improving ion beam quality in an implant system
WO2014160301A1 (en) 2013-03-14 2014-10-02 Mcalister Technologies, Llc Method and apparatus for generating hydrogen from metal
CN104752140B (en) * 2013-12-31 2017-06-06 北京北方微电子基地设备工艺研究中心有限责任公司 A kind of reaction chamber and plasma processing device
US20180230624A1 (en) * 2017-02-10 2018-08-16 Applied Materials, Inc. Method and apparatus for low temperature selective epitaxy in a deep trench

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6083344A (en) * 1997-05-29 2000-07-04 Applied Materials, Inc. Multi-zone RF inductively coupled source configuration
US6893907B2 (en) * 2002-06-05 2005-05-17 Applied Materials, Inc. Fabrication of silicon-on-insulator structure using plasma immersion ion implantation
US7037813B2 (en) * 2000-08-11 2006-05-02 Applied Materials, Inc. Plasma immersion ion implantation process using a capacitively coupled plasma source having low dissociation and low minimum plasma voltage

Family Cites Families (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5262029A (en) * 1988-05-23 1993-11-16 Lam Research Method and system for clamping semiconductor wafers
US4948458A (en) * 1989-08-14 1990-08-14 Lam Research Corporation Method and apparatus for producing magnetically-coupled planar plasma
JPH04362091A (en) * 1991-06-05 1992-12-15 Mitsubishi Heavy Ind Ltd Plasma chemical vapor deposition apparatus
JPH05326452A (en) * 1991-06-10 1993-12-10 Kawasaki Steel Corp Equipment and method for plasma treatment
US6518195B1 (en) * 1991-06-27 2003-02-11 Applied Materials, Inc. Plasma reactor using inductive RF coupling, and processes
US5330615A (en) * 1991-11-04 1994-07-19 Cheng Chu Symmetric double water plasma etching system
US5309063A (en) * 1993-03-04 1994-05-03 David Sarnoff Research Center, Inc. Inductive coil for inductively coupled plasma production apparatus
US5430355A (en) * 1993-07-30 1995-07-04 Texas Instruments Incorporated RF induction plasma source for plasma processing
US5571366A (en) * 1993-10-20 1996-11-05 Tokyo Electron Limited Plasma processing apparatus
JPH07161493A (en) * 1993-12-08 1995-06-23 Fujitsu Ltd Method and device for generating plasma
US5811022A (en) * 1994-11-15 1998-09-22 Mattson Technology, Inc. Inductive plasma reactor
US5556521A (en) * 1995-03-24 1996-09-17 Sony Corporation Sputter etching apparatus with plasma source having a dielectric pocket and contoured plasma source
US6140612A (en) * 1995-06-07 2000-10-31 Lam Research Corporation Controlling the temperature of a wafer by varying the pressure of gas between the underside of the wafer and the chuck
JPH0950992A (en) * 1995-08-04 1997-02-18 Sharp Corp Film forming device
US6253704B1 (en) * 1995-10-13 2001-07-03 Mattson Technology, Inc. Apparatus and method for pulsed plasma processing of a semiconductor substrate
US5838529A (en) * 1995-12-22 1998-11-17 Lam Research Corporation Low voltage electrostatic clamp for substrates such as dielectric substrates
US5820723A (en) * 1996-06-05 1998-10-13 Lam Research Corporation Universal vacuum chamber including equipment modules such as a plasma generating source, vacuum pumping arrangement and/or cantilevered substrate support
US5863376A (en) * 1996-06-05 1999-01-26 Lam Research Corporation Temperature controlling method and apparatus for a plasma processing chamber
US6013155A (en) * 1996-06-28 2000-01-11 Lam Research Corporation Gas injection system for plasma processing
US5993594A (en) * 1996-09-30 1999-11-30 Lam Research Corporation Particle controlling method and apparatus for a plasma processing chamber
US6184158B1 (en) * 1996-12-23 2001-02-06 Lam Research Corporation Inductively coupled plasma CVD
US6132517A (en) * 1997-02-21 2000-10-17 Applied Materials, Inc. Multiple substrate processing apparatus for enhanced throughput
US6379576B2 (en) * 1997-11-17 2002-04-30 Mattson Technology, Inc. Systems and methods for variable mode plasma enhanced processing of semiconductor wafers
US6230651B1 (en) * 1998-12-30 2001-05-15 Lam Research Corporation Gas injection system for plasma processing
JP2000299306A (en) * 1999-04-13 2000-10-24 Nec Corp Inductively coupled plasma etching system
JP2000353690A (en) * 1999-06-11 2000-12-19 Sharp Corp Plasma reactor apparatus
US6706142B2 (en) * 2000-11-30 2004-03-16 Mattson Technology, Inc. Systems and methods for enhancing plasma processing of a semiconductor substrate
US6830622B2 (en) * 2001-03-30 2004-12-14 Lam Research Corporation Cerium oxide containing ceramic components and coatings in semiconductor processing equipment and methods of manufacture thereof
US6962644B2 (en) * 2002-03-18 2005-11-08 Applied Materials, Inc. Tandem etch chamber plasma processing system
JP3820188B2 (en) * 2002-06-19 2006-09-13 三菱重工業株式会社 Plasma processing apparatus and plasma processing method
US7396431B2 (en) * 2004-09-30 2008-07-08 Tokyo Electron Limited Plasma processing system for treating a substrate
JP2007150012A (en) * 2005-11-29 2007-06-14 Matsushita Electric Ind Co Ltd Device and method for processing plasma

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6083344A (en) * 1997-05-29 2000-07-04 Applied Materials, Inc. Multi-zone RF inductively coupled source configuration
US7037813B2 (en) * 2000-08-11 2006-05-02 Applied Materials, Inc. Plasma immersion ion implantation process using a capacitively coupled plasma source having low dissociation and low minimum plasma voltage
US6893907B2 (en) * 2002-06-05 2005-05-17 Applied Materials, Inc. Fabrication of silicon-on-insulator structure using plasma immersion ion implantation

Also Published As

Publication number Publication date
TW200917362A (en) 2009-04-16
US7972471B2 (en) 2011-07-05
CN101720500B (en) 2011-09-21
US8119532B2 (en) 2012-02-21
US20090004874A1 (en) 2009-01-01
TWI416623B (en) 2013-11-21
WO2009005624A2 (en) 2009-01-08
CN101720500A (en) 2010-06-02
JP2010532565A (en) 2010-10-07
KR101495940B1 (en) 2015-02-25
KR20100047237A (en) 2010-05-07
US20110230040A1 (en) 2011-09-22
JP5519498B2 (en) 2014-06-11

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