WO2009006515A3 - Small gauge pressure sensor using wafer bonding and electrochemical etch stopping - Google Patents

Small gauge pressure sensor using wafer bonding and electrochemical etch stopping Download PDF

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Publication number
WO2009006515A3
WO2009006515A3 PCT/US2008/068994 US2008068994W WO2009006515A3 WO 2009006515 A3 WO2009006515 A3 WO 2009006515A3 US 2008068994 W US2008068994 W US 2008068994W WO 2009006515 A3 WO2009006515 A3 WO 2009006515A3
Authority
WO
WIPO (PCT)
Prior art keywords
diaphragm
wafer
pressure sensor
gauge pressure
bonding
Prior art date
Application number
PCT/US2008/068994
Other languages
French (fr)
Other versions
WO2009006515A2 (en
Inventor
Carl E Stewart
Gilberto Morales
Richard A Davis
Original Assignee
Honeywell Int Inc
Carl E Stewart
Gilberto Morales
Richard A Davis
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Honeywell Int Inc, Carl E Stewart, Gilberto Morales, Richard A Davis filed Critical Honeywell Int Inc
Priority to EP08772350A priority Critical patent/EP2168164A2/en
Priority to CN200880023226A priority patent/CN101743637A/en
Publication of WO2009006515A2 publication Critical patent/WO2009006515A2/en
Publication of WO2009006515A3 publication Critical patent/WO2009006515A3/en

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01LMEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0042Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01LMEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0051Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance
    • G01L9/0052Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements
    • G01L9/0054Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements integral with a semiconducting diaphragm

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Pressure Sensors (AREA)
  • Measuring Fluid Pressure (AREA)

Abstract

A gauge pressure sensor apparatus and a method of forming the same. A constraint wafer can be partially etched to set the diaphragm size, followed by bonding to a top wafer. The thickness of the top wafer is either the desired diaphragm thickness or is thinned to the desired thickness after bonding. The bonding of top wafer and constraint wafer enables electrochemical etch stopping. This allows the media conduit to be etched through the back of the constraint wafer and an electrical signal produced when the etching reaches the diaphragm. The process prevents the diaphragm from being over-etched. The invention allows the die size to be smaller than die where the diaphragm size is set by etching from the back side.
PCT/US2008/068994 2007-07-05 2008-07-02 Small gauge pressure sensor using wafer bonding and electrochemical etch stopping WO2009006515A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
EP08772350A EP2168164A2 (en) 2007-07-05 2008-07-02 Small gauge pressure sensor using wafer bonding and electrochemical etch stopping
CN200880023226A CN101743637A (en) 2007-07-05 2008-07-02 The small gauge pressure sensor that utilizes wafer combination and chemical etching to stop

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/825,237 US7493822B2 (en) 2007-07-05 2007-07-05 Small gauge pressure sensor using wafer bonding and electrochemical etch stopping
US11/825,237 2007-07-05

Publications (2)

Publication Number Publication Date
WO2009006515A2 WO2009006515A2 (en) 2009-01-08
WO2009006515A3 true WO2009006515A3 (en) 2009-05-07

Family

ID=40220404

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2008/068994 WO2009006515A2 (en) 2007-07-05 2008-07-02 Small gauge pressure sensor using wafer bonding and electrochemical etch stopping

Country Status (4)

Country Link
US (1) US7493822B2 (en)
EP (1) EP2168164A2 (en)
CN (1) CN101743637A (en)
WO (1) WO2009006515A2 (en)

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US8934263B2 (en) 2011-08-01 2015-01-13 Honeywell International Inc. Protective cover for pressure sensor assemblies
US8459125B2 (en) 2011-08-01 2013-06-11 Honeywell International Inc. Pressure sensor assembly
US8671753B2 (en) 2011-08-01 2014-03-18 Honeywell International Inc. Cable harness for a sensor
US8656786B2 (en) 2011-08-01 2014-02-25 Honeywell International Inc. Interchangeable pressure sensor assembly and methods of assembly
US8817483B2 (en) 2011-08-01 2014-08-26 Honeywell International Inc. Connector assembly for a sensor
US8534130B2 (en) 2011-08-01 2013-09-17 Honeywell International Inc. Joint between a pressure sensor and a pressure port of a sensor assembly
US20130098160A1 (en) 2011-10-25 2013-04-25 Honeywell International Inc. Sensor with fail-safe media seal
US9995486B2 (en) 2011-12-15 2018-06-12 Honeywell International Inc. Gas valve with high/low gas pressure detection
US9074770B2 (en) 2011-12-15 2015-07-07 Honeywell International Inc. Gas valve with electronic valve proving system
US9846440B2 (en) 2011-12-15 2017-12-19 Honeywell International Inc. Valve controller configured to estimate fuel comsumption
US9557059B2 (en) 2011-12-15 2017-01-31 Honeywell International Inc Gas valve with communication link
US8905063B2 (en) 2011-12-15 2014-12-09 Honeywell International Inc. Gas valve with fuel rate monitor
US8899264B2 (en) 2011-12-15 2014-12-02 Honeywell International Inc. Gas valve with electronic proof of closure system
US9851103B2 (en) 2011-12-15 2017-12-26 Honeywell International Inc. Gas valve with overpressure diagnostics
US9835265B2 (en) 2011-12-15 2017-12-05 Honeywell International Inc. Valve with actuator diagnostics
US8947242B2 (en) 2011-12-15 2015-02-03 Honeywell International Inc. Gas valve with valve leakage test
US8839815B2 (en) 2011-12-15 2014-09-23 Honeywell International Inc. Gas valve with electronic cycle counter
DE102012206531B4 (en) * 2012-04-17 2015-09-10 Infineon Technologies Ag Method for producing a cavity within a semiconductor substrate
US9234661B2 (en) 2012-09-15 2016-01-12 Honeywell International Inc. Burner control system
US10422531B2 (en) 2012-09-15 2019-09-24 Honeywell International Inc. System and approach for controlling a combustion chamber
US9450066B2 (en) * 2012-10-12 2016-09-20 Texas State University Vertically movable gate field effect transistor (VMGFET) on a silicon-on-insulator (SOI) wafer and method of forming a VMGFET
US9156676B2 (en) 2013-04-09 2015-10-13 Honeywell International Inc. Sensor with isolated diaphragm
US9136136B2 (en) 2013-09-19 2015-09-15 Infineon Technologies Dresden Gmbh Method and structure for creating cavities with extreme aspect ratios
EP2868970B1 (en) 2013-10-29 2020-04-22 Honeywell Technologies Sarl Regulating device
US10024439B2 (en) 2013-12-16 2018-07-17 Honeywell International Inc. Valve over-travel mechanism
US9410861B2 (en) 2014-03-25 2016-08-09 Honeywell International Inc. Pressure sensor with overpressure protection
US9841122B2 (en) 2014-09-09 2017-12-12 Honeywell International Inc. Gas valve with electronic valve proving system
US9513242B2 (en) 2014-09-12 2016-12-06 Honeywell International Inc. Humidity sensor
US9645584B2 (en) 2014-09-17 2017-05-09 Honeywell International Inc. Gas valve with electronic health monitoring
WO2016134079A1 (en) 2015-02-17 2016-08-25 Honeywell International Inc. Humidity sensor and method for manufacturing the sensor
US10215655B2 (en) 2015-12-31 2019-02-26 Honeywell International Inc. Pressure sensor assembly
US10503181B2 (en) 2016-01-13 2019-12-10 Honeywell International Inc. Pressure regulator
EP3244201B1 (en) 2016-05-13 2021-10-27 Honeywell International Inc. Fet based humidity sensor with barrier layer protecting gate dielectric
US10221062B2 (en) * 2016-10-03 2019-03-05 Continental Automotive Systems, Inc. Cavity with silicon on insulator MEMS pressure sensing device with an extended shallow cross-shaped cavity
US9945747B1 (en) 2016-10-13 2018-04-17 Honeywell International Inc. Gel filled port pressure sensor for robust media sealing
US10564062B2 (en) 2016-10-19 2020-02-18 Honeywell International Inc. Human-machine interface for gas valve
US10481024B2 (en) 2017-04-20 2019-11-19 Honeywell International Inc. Pressure sensor assembly including a cured elastomeric force transmitting member
US10684184B2 (en) 2017-04-20 2020-06-16 Honeywell International Inc. Pressure sensor assembly having a cavity filled with gel or fluid
US11073281B2 (en) 2017-12-29 2021-07-27 Honeywell International Inc. Closed-loop programming and control of a combustion appliance
US10697815B2 (en) 2018-06-09 2020-06-30 Honeywell International Inc. System and methods for mitigating condensation in a sensor module
CN209326840U (en) 2018-12-27 2019-08-30 热敏碟公司 Pressure sensor and pressure transmitter

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US5286341A (en) * 1990-04-14 1994-02-15 Robert Bosch Gmbh Process for producing micro-mechanical structures
US5344523A (en) * 1992-05-12 1994-09-06 The Foxboro Comany Overpressure-protected, polysilicon, capacitive differential pressure sensor and method of making the same
WO1998015807A1 (en) * 1996-10-07 1998-04-16 Lucas Novasensor Silicon at least 5 micron high acute cavity with channel by oxidizing fusion bonding and stop etching
US20050199973A1 (en) * 2004-02-17 2005-09-15 Hubert Benzel Differential pressure sensor

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US5578843A (en) * 1994-10-06 1996-11-26 Kavlico Corporation Semiconductor sensor with a fusion bonded flexible structure
US5614678A (en) * 1996-02-05 1997-03-25 Kulite Semiconductor Products, Inc. High pressure piezoresistive transducer
US6830939B2 (en) * 2002-08-28 2004-12-14 Verity Instruments, Inc. System and method for determining endpoint in etch processes using partial least squares discriminant analysis in the time domain of optical emission spectra

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5286341A (en) * 1990-04-14 1994-02-15 Robert Bosch Gmbh Process for producing micro-mechanical structures
US5344523A (en) * 1992-05-12 1994-09-06 The Foxboro Comany Overpressure-protected, polysilicon, capacitive differential pressure sensor and method of making the same
WO1998015807A1 (en) * 1996-10-07 1998-04-16 Lucas Novasensor Silicon at least 5 micron high acute cavity with channel by oxidizing fusion bonding and stop etching
US20050199973A1 (en) * 2004-02-17 2005-09-15 Hubert Benzel Differential pressure sensor

Also Published As

Publication number Publication date
CN101743637A (en) 2010-06-16
WO2009006515A2 (en) 2009-01-08
US7493822B2 (en) 2009-02-24
US20090007681A1 (en) 2009-01-08
EP2168164A2 (en) 2010-03-31

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