WO2009030662A3 - Process for obtaining a hybrid substrate comprising at least one layer of a nitrided material - Google Patents

Process for obtaining a hybrid substrate comprising at least one layer of a nitrided material Download PDF

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Publication number
WO2009030662A3
WO2009030662A3 PCT/EP2008/061488 EP2008061488W WO2009030662A3 WO 2009030662 A3 WO2009030662 A3 WO 2009030662A3 EP 2008061488 W EP2008061488 W EP 2008061488W WO 2009030662 A3 WO2009030662 A3 WO 2009030662A3
Authority
WO
WIPO (PCT)
Prior art keywords
nitrided material
active layer
source substrate
implantation
obtaining
Prior art date
Application number
PCT/EP2008/061488
Other languages
French (fr)
Other versions
WO2009030662A2 (en
Inventor
Arnaud Garnier
Original Assignee
Soitec Silicon On Insulator
Arnaud Garnier
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Soitec Silicon On Insulator, Arnaud Garnier filed Critical Soitec Silicon On Insulator
Priority to US12/672,819 priority Critical patent/US8093686B2/en
Priority to JP2010523487A priority patent/JP2010537936A/en
Priority to CN2008801053329A priority patent/CN101796627B/en
Priority to EP08803470A priority patent/EP2186127A2/en
Publication of WO2009030662A2 publication Critical patent/WO2009030662A2/en
Publication of WO2009030662A3 publication Critical patent/WO2009030662A3/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate

Abstract

The invention relates to a process for obtaining a hybrid substrate comprising at least one active layer of a nitrided material of the III/N type intended for applications in the field of electronics, characterized in that it comprises the steps consisting in: selecting a source substrate (1) made of nitrided material of the III/N type, having a hexagonal single crystal crystallographic structure; carrying out an implantation of He+ helium ions into this source substrate (1), through one of its faces, called the 'implantation face' (10), which lies in a plane parallel or approximately parallel with the 'c' crystallographic axis of said nitrided material, at an implantation dose equal to or greater than 1 x 1O16 He+ /cm2 and 1 x 1O17 He +/cm2, for the purpose of forming therein a number of nanocavities defining a weakened zone (13) which delimits said active layer (14); and transferring said active layer (14), by applying an overall energy budget capable of causing it to be detached from the source substrate (1), which budget comprises at least the application of a thermal budget capable of causing said nanocavities to grow into cavities (12').
PCT/EP2008/061488 2007-09-04 2008-09-01 Process for obtaining a hybrid substrate comprising at least one layer of a nitrided material WO2009030662A2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
US12/672,819 US8093686B2 (en) 2007-09-04 2008-09-01 Process for obtaining a hybrid substrate comprising at least one layer of a nitrided material
JP2010523487A JP2010537936A (en) 2007-09-04 2008-09-01 Method for manufacturing a hybrid substrate having at least one nitride material layer
CN2008801053329A CN101796627B (en) 2007-09-04 2008-09-01 Process for obtaining a hybrid substrate comprising at least one layer of a nitrided material
EP08803470A EP2186127A2 (en) 2007-09-04 2008-09-01 Process for obtaining a hybrid substrate comprising at least one layer of a nitrided material

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR07/06180 2007-09-04
FR0706180A FR2920589B1 (en) 2007-09-04 2007-09-04 "PROCESS FOR OBTAINING A HYBRID SUBSTRATE COMPRISING AT LEAST ONE LAYER OF NITRIDE MATERIAL"

Publications (2)

Publication Number Publication Date
WO2009030662A2 WO2009030662A2 (en) 2009-03-12
WO2009030662A3 true WO2009030662A3 (en) 2009-06-25

Family

ID=39345309

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2008/061488 WO2009030662A2 (en) 2007-09-04 2008-09-01 Process for obtaining a hybrid substrate comprising at least one layer of a nitrided material

Country Status (7)

Country Link
US (1) US8093686B2 (en)
EP (1) EP2186127A2 (en)
JP (1) JP2010537936A (en)
KR (1) KR20100075877A (en)
CN (1) CN101796627B (en)
FR (1) FR2920589B1 (en)
WO (1) WO2009030662A2 (en)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7538010B2 (en) * 2003-07-24 2009-05-26 S.O.I.Tec Silicon On Insulator Technologies Method of fabricating an epitaxially grown layer
JP5581619B2 (en) * 2009-07-07 2014-09-03 株式会社村田製作所 Method for manufacturing piezoelectric device and piezoelectric device
WO2011025149A2 (en) * 2009-08-26 2011-03-03 서울옵토디바이스주식회사 Method for manufacturing a semiconductor substrate and method for manufacturing a light-emitting device
JP5544875B2 (en) * 2009-12-25 2014-07-09 住友電気工業株式会社 Composite board
WO2011132654A1 (en) * 2010-04-20 2011-10-27 住友電気工業株式会社 Method for producing composite substrate
FR2961948B1 (en) * 2010-06-23 2012-08-03 Soitec Silicon On Insulator PROCESS FOR TREATING A COMPOUND MATERIAL PART
FR2961719B1 (en) * 2010-06-24 2013-09-27 Soitec Silicon On Insulator PROCESS FOR PROCESSING A PIECE OF A COMPOUND MATERIAL
CN103262210B (en) * 2010-09-10 2017-09-08 维尔雷思科技有限公司 The device that the method for electrooptical device is manufactured using the layer separated with semiconductor donor and is made up of this method
RU2469433C1 (en) * 2011-07-13 2012-12-10 Юрий Георгиевич Шретер Method for laser separation of epitaxial film or layer of epitaxial film from growth substrate of epitaxial semiconductor structure (versions)
CN107112205B (en) * 2015-01-16 2020-12-22 住友电气工业株式会社 Semiconductor substrate and method of manufacturing the same, combined semiconductor substrate and method of manufacturing the same
KR101951902B1 (en) * 2016-04-12 2019-02-26 주식회사 루미스탈 Nitride semiconductor substrate having a plurality voids and method formanufacturing the same
WO2017179868A1 (en) * 2016-04-12 2017-10-19 주식회사 루미스탈 Method for manufacturing nitride semiconductor substrate including semi-insulating nitride semiconductor layer, and nitride semiconductor substrate manufactured thereby
KR102001791B1 (en) * 2018-12-26 2019-07-18 한양대학교 산학협력단 Method of manufacturing gallium nitride substrate using ion implantation

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001093325A1 (en) * 2000-05-30 2001-12-06 Commissariat A L'energie Atomique Embrittled substrate and method for making same
EP1429381A2 (en) * 2002-12-10 2004-06-16 S.O.I.Tec Silicon on Insulator Technologies A method for manufacturing a material compound
EP1811560A1 (en) * 2006-01-23 2007-07-25 S.O.I.TEC. Silicon on Insulator Technologies S.A. Method of manufacturing a composite substrate with improved electrical properties

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FR2816445B1 (en) * 2000-11-06 2003-07-25 Commissariat Energie Atomique METHOD FOR MANUFACTURING A STACKED STRUCTURE COMPRISING A THIN LAYER ADHERING TO A TARGET SUBSTRATE
US20040262686A1 (en) * 2003-06-26 2004-12-30 Mohamad Shaheen Layer transfer technique
EP1519409B1 (en) * 2003-09-26 2008-08-20 S.O.I. Tec Silicon on Insulator Technologies S.A. A method of fabrication of a substrate for an epitaxial growth
US20060021565A1 (en) * 2004-07-30 2006-02-02 Aonex Technologies, Inc. GaInP / GaAs / Si triple junction solar cell enabled by wafer bonding and layer transfer
DE102005003884A1 (en) * 2005-01-24 2006-08-03 Forschungsverbund Berlin E.V. Process for the preparation of c-plane oriented GaN or AlxGa1-xN substrates
US10374120B2 (en) * 2005-02-18 2019-08-06 Koninklijke Philips N.V. High efficiency solar cells utilizing wafer bonding and layer transfer to integrate non-lattice matched materials
TW200707799A (en) * 2005-04-21 2007-02-16 Aonex Technologies Inc Bonded intermediate substrate and method of making same
US8334155B2 (en) * 2005-09-27 2012-12-18 Philips Lumileds Lighting Company Llc Substrate for growing a III-V light emitting device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001093325A1 (en) * 2000-05-30 2001-12-06 Commissariat A L'energie Atomique Embrittled substrate and method for making same
EP1429381A2 (en) * 2002-12-10 2004-06-16 S.O.I.Tec Silicon on Insulator Technologies A method for manufacturing a material compound
EP1811560A1 (en) * 2006-01-23 2007-07-25 S.O.I.TEC. Silicon on Insulator Technologies S.A. Method of manufacturing a composite substrate with improved electrical properties

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
KATSU T ET AL: "Transfers of 2-inch GaN films onto sapphire substrates using Smart Cut<E6>TM</E6> technology", LETTERS, IEE STEVENAGE, GB, vol. 41, no. 11, 26 May 2005 (2005-05-26), pages 668 - 670, XP006024168, ISSN: 0013-5194 *
KO ET AL: "Study on optimal growth conditions of a-plane GaN grown on r-plane sapphire by metal-organic chemical vapor deposition", JOURNAL OF CRYSTAL GROWTH, ELSEVIER, AMSTERDAM, NL, vol. 300, no. 2, 13 March 2007 (2007-03-13), pages 308 - 313, XP005932313, ISSN: 0022-0248 *

Also Published As

Publication number Publication date
CN101796627A (en) 2010-08-04
US8093686B2 (en) 2012-01-10
KR20100075877A (en) 2010-07-05
EP2186127A2 (en) 2010-05-19
US20110095400A1 (en) 2011-04-28
JP2010537936A (en) 2010-12-09
FR2920589A1 (en) 2009-03-06
WO2009030662A2 (en) 2009-03-12
CN101796627B (en) 2013-03-27
FR2920589B1 (en) 2010-12-03

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