WO2009031042A2 - N-way doherty distributed power amplifier - Google Patents

N-way doherty distributed power amplifier Download PDF

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Publication number
WO2009031042A2
WO2009031042A2 PCT/IB2008/003079 IB2008003079W WO2009031042A2 WO 2009031042 A2 WO2009031042 A2 WO 2009031042A2 IB 2008003079 W IB2008003079 W IB 2008003079W WO 2009031042 A2 WO2009031042 A2 WO 2009031042A2
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WIPO (PCT)
Prior art keywords
amplifier
distributed
peaking
main
way doherty
Prior art date
Application number
PCT/IB2008/003079
Other languages
French (fr)
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WO2009031042A3 (en
Inventor
Wan-Jong Kim
Kyoung-Joon Cho
Shawn Patrick Stapleton
Jong-Heon Kim
Original Assignee
Dali Systems, Co., Ltd.
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Application filed by Dali Systems, Co., Ltd. filed Critical Dali Systems, Co., Ltd.
Priority to JP2010504909A priority Critical patent/JP5474764B2/en
Priority to EP08829011.9A priority patent/EP2145385B1/en
Priority to KR20097024268A priority patent/KR101484796B1/en
Priority to CN200880021149.0A priority patent/CN102089966B/en
Publication of WO2009031042A2 publication Critical patent/WO2009031042A2/en
Publication of WO2009031042A3 publication Critical patent/WO2009031042A3/en

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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0288—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers using a main and one or several auxiliary peaking amplifiers whereby the load is connected to the main amplifier using an impedance inverter, e.g. Doherty amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/32—Modifications of amplifiers to reduce non-linear distortion
    • H03F1/3223—Modifications of amplifiers to reduce non-linear distortion using feed-forward
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/32—Modifications of amplifiers to reduce non-linear distortion
    • H03F1/3241—Modifications of amplifiers to reduce non-linear distortion using predistortion circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/56—Modifications of input or output impedances, not otherwise provided for
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/60—Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators
    • H03F3/602—Combinations of several amplifiers
    • H03F3/604—Combinations of several amplifiers using FET's
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/60—Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators
    • H03F3/605—Distributed amplifiers
    • H03F3/607—Distributed amplifiers using FET's
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/02—Transmitters
    • H04B1/04—Circuits
    • H04B2001/0408—Circuits with power amplifiers
    • H04B2001/0425—Circuits with power amplifiers with linearisation using predistortion
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/02—Transmitters
    • H04B1/04—Circuits
    • H04B2001/0408—Circuits with power amplifiers
    • H04B2001/0441—Circuits with power amplifiers with linearisation using feed-forward
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/02—Transmitters
    • H04B1/04—Circuits
    • H04B2001/0408—Circuits with power amplifiers
    • H04B2001/045—Circuits with power amplifiers with means for improving efficiency

Definitions

  • the present invention generally relates to high power communication systems. More specially, the present invention relates to high efficiency high power amplifiers for such systems.
  • the OFDM signal consists of a number of independently modulated sub-carriers, it produces a higher peak-to-average power ratio (PAR) signal.
  • PAR peak-to-average power ratio
  • a typical PAR for a 64-subcarrier OFDM signal is around 8-13 dB.
  • the PAR also increases, typically from 11 to 16 dB.
  • the power amplifiers designed to operate with these high PARs typically have significantly deteriorated efficiency.
  • the Doherty amplifier is known as a technique for improving the efficiency at high output back-off power. Its primary advantage is the ease of configuration when applied to high power amplifiers, unlike other efficiency enhancement amplifiers or techniques such as switching mode amplifiers, EER, LINC and so on. Recent results have been reported on its use as: a symmetric Doherty structure, an asymmetric Doherty structure with uneven power transistors, and a N-way Doherty structure using multi-paralleled transistors. In the case of the symmetric Doherty amplifier, the maximum efficiency point is obtained at 6 dB back-off power.
  • the asymmetric Doherty amplifier can obtain, a high efficiency at various back-off powers using a combination of different power device sizes for the main and peaking amplifiers. Unfortunately, it is difficult to optimize the gain and output power of the asymmetric Doherty amplifier because of the different device matching circuits and the delay mismatch between the main amplifier and the peaking amplifier.
  • the conventional N-way Doherty amplifier has an efficiency enhancement over a conventional 2-way Doherty structure by using multiple parallel transistors of identical devices. Its one drawback is that the total gain will be reduced due to the loss of the N-way input power splitter. Under low gain situations this will increase the power dissipation of the driving amplifier.
  • the present invention has been made in view of the above problems, and it is an object of the present invention to provide a method for improving the gain and efficiency performance of the Doherty amplifying structure at high output back-off power for high power communication system applications.
  • the technique employs dual-feed distributed amplifying.
  • the power splitter and combiner of the conventional N-way Doherty amplifier are replaced by hybrid couplers with transmission lines.
  • the present invention is able to achieve good isolation at the input and output as well as high gain performance with high efficiency.
  • Figure 1 is schematic diagram showing an embodiment of an N- way Doherty amplifier using a dual-feed distributed (DFD) method in accordance with the present invention.
  • Figure 2 is a graph showing efficiency characteristics of an N-way Doherty dual-feed distributed amplifier at various levels of output back-off power.
  • Figure 3 is a schematic diagram showing an embodiment of a 3- way Doherty distributed amplifier in accordance with the present invention.
  • Figure 4 is a graph showing simulation results of gain and power " added efficiency performance (PAE) of ⁇ an embodiment of a 3-way Doherty distributed amplifier in accordance with the present invention.
  • PAE gain and power " added efficiency performance
  • Figure 5 is a graph showing measurement results of gain and power added efficiency performance (PAE) of an embodiment of a 3-way Doherty distributed amplifier in accordance with the present invention.
  • PAE gain and power added efficiency performance
  • Figure 6 is a graph showing measurement results of gain and PAE performance variation as a function of the shunt capacitor and bias voltage of peaking amplifiers for a single-tone signal using an embodiment of a 3-way Doherty distributed amplifier in accordance with the present invention.
  • Figure 7 is a graph showing measurement results of spectrum for a single WCDMA carrier using the 3-way Doherty distributed amplifier of the present invention.
  • Figure 8 shows a hybrid mode power amplifier system in accordance with the invention. DETAILED DESCRIPTION OF THE INVENTION
  • the present invention involves the use of a single- ended dual-feed distributed (SEDFD) amplifying method with an N-way Doherty amplifier structure, so as to achieve high gain and high efficiency performances at high output back-off power.
  • the gain and efficiency performance is also maximized by adjusting the gate bias of N-way peaking amplifiers and shunt capacitors at the-end of the-half-wave length gate and drain lines, respectively.
  • the present invention achieves higher power added efficiency (PAE) and higher gain for the multiplexing modulated signals.
  • PAE power added efficiency
  • the method and apparatus provided by the present invention is therefore referred as an N-way
  • NWDPA Doherty Distributed Power Amplifier
  • FIG. 1 is a schematic diagram showing an N-way Doherty amplifier using the SEDFD method of the present invention.
  • the RF input signal 101 is provided as an input to main SEDFD amplifier 108 and peaking SEFDF amplifier 107 by means of a power splitter.
  • Each SEDFD amplifier consists of two transmission lines 109, 110, 111 , 112 and N multiple transistors 113, 114. All transistors 113, 114 in the SEDFD main amplifier 107 and peaking amplifier 108 are connected by both gate and drain lines 109, 110, 111 , 112 with a half- wave length at the center frequency and operate identically.
  • the input signal of the SEDFD amplifier 107, 108 is distributed along the gate line 109, 111 and the amplified output signal is combined along the drain line 110, 112. Since each transistor adds power in phase to the signal, the SEDFD amplifier 107, 108 is able to provide higher gain.
  • a ⁇ /4 microstrip line 103 is prior to the SEDFD peaking amplifier 107 in order to synchronize the phases between the SEDFD main amplifier 108 and the SEDFD peaking amplifier 107.
  • the output signal of the SEDFD main amplifier 108 is passed through a microstrip ⁇ /4 impedance transformer 104 and combined with the output signal of the SEDFD peaking amplifier 107 by the power combiner- 105-
  • Figure 2 is a graph showing efficiency characteristics of an
  • NWDPA at various output back-off power.
  • the efficiency of the NWDPA for the maximum power level is given by ⁇
  • v 0 and v max are the output voltage and the maximum output voltage, respectively
  • M is the number of transistors for the main amplifier
  • P the number of transistors for the peaking amplifier.
  • the main and peaking amplifiers can be either single transistors or multiple transistors, or other forms of amplifiers.
  • the transistors can be discrete or integrated, again depending upon the embodiment.
  • FIG 3. is a schematic diagram showing an embodiment of a 3-way Doherty SEDFD amplifier of the present invention.
  • the amplifier consists of one main amplifier 203 and two peaking amplifiers 204, 205 using the same type of transistors.
  • the RF input signal 201 is passed through a 90° hybrid coupler 202 and divided to a main amplifier 203 and two peaking amplifiers 204, 205.
  • Input impedance matching circuits 206, 207, 208 are connected between the coupler and the main amplifier 203 and the peaking amplifiers 204, 205, respectively.
  • the main amplifier 203 is biased as a Class-AB amplifier and the peaking amplifiers 204, 205 biased as Class-C amplifiers. If the main amplifier is generally biased in Class AB mode, it will have a gain compression characteristic. In contrast, if the peaking amplifier is generally biased in Class C mode, it will have a gain expansion characteristic. In at least some embodiments, the present invention takes advantage of the complimentary characterists, so that the gain compression of the Class AB main amplifier will be compensated by the gain expansion of the Class C peaking amplifiers to create a more linear power amplifier.
  • output impedance matching circuits 209, 210, 211 are connected to the outputs of the main amplifier 203 and the peaking amplifiers 204, 205.
  • a shunt capacitor C M 212 is connected to the output impedance matching circuit 209 of the main amplifier 203 so as to optimize the linearity of the NWDPA based on the linearity optimized Doherty amplifier method of U.S. provisional application No. 60/846,905 filed on Nov.
  • the peaking amplifiers 204, 205 are combined using the dual-feed distributed structure which has, in some embodiments, half-wave micro-strip lines 217, 218 at each gate and drain of the first peaking amplifier, shown as a FET for purposes of illustration and clarity.
  • the peaking amplifier 1 is combined with the peaking amplifier 2 using a dual-feed distributed structure.
  • the dual-feed distributed structure comprises the half wavelength and quarter wavelength lines and short-circuited quarter-wave length micro-strip lines 219, 220 at each gate and drain of the second peaking amplifier, respectively, connected through the associated input and output impedance matching circuits.
  • the second peaking amplifier is shown in the illustrated embodiment as a single transistor for purposes of simplicity, but could be one or more transistors.
  • the quarter wavelength transmission lines at the output could in some embodiments be replaced by a hybrid coupler.
  • the half-wave lines 217 and 218 are, in some embodiments, set at the center frequency of the operating power amplifier bandwidth.
  • Shunt capacitors C P 221 , 222 are connected in some embodiments to both ends of the short-circuited quarter-wave length micro-strip lines 219, 220 for optimizing both gain and efficiency characteristics of the NWDPA.
  • Offset line 213 can be included to prevent leakage power between the main amplifier 203 and the peaking amplifiers 204, 205.
  • the hybrid coupler 202 will cause some gain compression, and this can be compensated by the gain expansion of the peaking amplifiers.
  • An additional hybrid coupler can be connected at the output in some embodiments.
  • the main distributed amplifiers and peaking distributed amplifiers can be constructed either as separate miniature microwave integrated circuits or on one integrated MMIC. [0025] In examining the performance of NWDPA, a 42 dBm high power amplifier is designed and implemented by using LDMOS FET's with p1dB of
  • Figure 4 is a graph showing simulation results of gain and PAE for a single tone signal at the frequency of 2140 MHz using a 3-way Doherty distributed amplifier such as shown in Figure 3.
  • the output impedance of the combined peaking amplifier using a dual-feed distributed structure is 4.65+J2.1 ⁇ . An offset line of approximately 0.25 ⁇ was inserted; this corresponds to an optimum output resistance of 521 ⁇ . From the simulated results, 43% PAE was obtained at a peak envelope power (PEP) of around 200 W. Consequently, a 40% PAE at 9.5 dB back-off power from the peak efficiency point was achieved.
  • FIG. 5 is a graph showing measurement results of gain and PAE of the 3-way Doherty distributed amplifier of the present invention.
  • the shunt capacitors, C P and C M of 15pF and 0.5 pF are used, respectively.
  • a 42.7% PAE at PEP of 131 W and 39.5% PAE at 9.5 dB- back off are- achieved, respectively.
  • -A gain of approximately 11 dB was obtained at 9.5 dB back off.
  • Figure 6 is a graph showing measurement results of gain and PAE performance variation as a function of the shunt capacitor and bias voltage of peaking amplifiers for single-tone signal using the 3-way Doherty distributed amplifier of the present invention. Optimization of O and the bias point of the two-peaking amplifiers produced efficiency and gain improvement of approximately 8% and 2 dB at 9.5 dB back off, even though the PAE is reduced at PEP.
  • FIG. 7 is a graph showing measurement results of spectrum for a single WCDMA carrier using a 3-way Doherty distributed amplifier in accordance with the present invention.
  • the shunt capacitors, Cp and CM, of 9.1 pF and 0.5 pF were used, respectively.
  • both memoryless and memory- based digital predistortion were applied.
  • the ACLR performances of -51 dBc after memoryless and -54 dBc after memory compensation were obtained at 41 dBm output power and +2.5 MHz offset frequency.
  • the NWDPA of the present invention compared to the conventional N-way Doherty amplifier, improves the gain performance more effectively since the NWDPA uses a SEDFD structure in conjunction with a Doherty amplifier.
  • a hybrid mode power amplifier system in accordance with the invention is shown in Figure ⁇ , in which a modulated RF input signal 800 is provided to a digital predistortion controller 805, which in turn provides its output to a power amplifier 810 in accordance with the present invention.
  • the RF output 815 is monitored, and a signal representative of the output is fed back to the controller 805 as a feedback signal 820.

Abstract

A power amplifier using N-way Doherty structure for extending the efficiency region over the high peak-to-average power ratio of the multiplexing modulated signals such as wideband code division multiple access and orthogonal frequency division multiplexing is disclosed. In an embodiment, the present invention uses a dual-feed distributed structure to an N-way Doherty amplifier to improve the isolation between at least one main amplifier and at least one peaking amplifier and, and also to improve both gain and efficiency performance at high output back-off power. Hybrid couplers can be used at either or both of the input and output. In at least some implementations, circuit space is also conserved due to the integration of amplification, power splitting and combining.

Description

N-WAY DOHERTY DISTRIBUTED POWER AMPLIFIER
BACKGROUND OF THE INVENTION
FIELD OF THE INVENTION
[001] The present invention generally relates to high power communication systems. More specially, the present invention relates to high efficiency high power amplifiers for such systems.
THE PRIOR ART
[002] In modern digital wireless communication systems, such as IS-95,
PCS, WCDIvIA1 OFDM and so on, the power amplifiers have advanced towards having a wide bandwidth and large number of carriers. Recently, orthogonal frequency division multiplexing (OFDM) modulation is an attractive technique for transmitting information efficiently within a limited bandwidth like WiBRO and
WiMAX. However, since the OFDM signal consists of a number of independently modulated sub-carriers, it produces a higher peak-to-average power ratio (PAR) signal. A typical PAR for a 64-subcarrier OFDM signal is around 8-13 dB. When the number of sub-carriers is increased to 2048, the PAR also increases, typically from 11 to 16 dB. The power amplifiers designed to operate with these high PARs typically have significantly deteriorated efficiency.
[003] The Doherty amplifier is known as a technique for improving the efficiency at high output back-off power. Its primary advantage is the ease of configuration when applied to high power amplifiers, unlike other efficiency enhancement amplifiers or techniques such as switching mode amplifiers, EER, LINC and so on. Recent results have been reported on its use as: a symmetric Doherty structure, an asymmetric Doherty structure with uneven power transistors, and a N-way Doherty structure using multi-paralleled transistors. In the case of the symmetric Doherty amplifier, the maximum efficiency point is obtained at 6 dB back-off power.
[004] _ _ . The asymmetric Doherty amplifier can obtain, a high efficiency at various back-off powers using a combination of different power device sizes for the main and peaking amplifiers. Unfortunately, it is difficult to optimize the gain and output power of the asymmetric Doherty amplifier because of the different device matching circuits and the delay mismatch between the main amplifier and the peaking amplifier. [005] The conventional N-way Doherty amplifier has an efficiency enhancement over a conventional 2-way Doherty structure by using multiple parallel transistors of identical devices. Its one drawback is that the total gain will be reduced due to the loss of the N-way input power splitter. Under low gain situations this will increase the power dissipation of the driving amplifier. [006] Further, while the conventional N-way Doherty amplifier can offer improved efficiency at high output back-off power, the performance of conventional N-way Doherty amplifiers deteriorates as to both gain and efficiency for higher peak-to-average power ratio (PAPR) signals. [007] Hence, a need remains in the arts for a method of applying both circuit-level and system-level techniques simultaneously for improving the gain and efficiency performance of N-way Doherty amplifier at high output back-off power in the high power communication systems.
SUMMARY OF INVENTION [008] Accordingly, the present invention has been made in view of the above problems, and it is an object of the present invention to provide a method for improving the gain and efficiency performance of the Doherty amplifying structure at high output back-off power for high power communication system applications. To achieve the above objects, according to the present invention, the technique employs dual-feed distributed amplifying.
The power splitter and combiner of the conventional N-way Doherty amplifier are replaced by hybrid couplers with transmission lines. Compared to the conventional N-way Doherty amplifier, the present invention is able to achieve good isolation at the input and output as well as high gain performance with high efficiency.
BRIEF DESCRIPTION OF DRAWINGS
[009] Further objects and advantages of the invention can be more fully understood from the following detailed description taken in conjunction with the accompanying drawings in which:
[0010] Figure 1 is schematic diagram showing an embodiment of an N- way Doherty amplifier using a dual-feed distributed (DFD) method in accordance with the present invention. [0011] Figure 2 is a graph showing efficiency characteristics of an N-way Doherty dual-feed distributed amplifier at various levels of output back-off power.
[0012] Figure 3 is a schematic diagram showing an embodiment of a 3- way Doherty distributed amplifier in accordance with the present invention.
[0013] Figure 4 is a graph showing simulation results of gain and power "added efficiency performance (PAE) of~an embodiment of a 3-way Doherty distributed amplifier in accordance with the present invention.
[0014] Figure 5 is a graph showing measurement results of gain and power added efficiency performance (PAE) of an embodiment of a 3-way Doherty distributed amplifier in accordance with the present invention.
[0015] Figure 6 is a graph showing measurement results of gain and PAE performance variation as a function of the shunt capacitor and bias voltage of peaking amplifiers for a single-tone signal using an embodiment of a 3-way Doherty distributed amplifier in accordance with the present invention.
[0016] Figure 7 is a graph showing measurement results of spectrum for a single WCDMA carrier using the 3-way Doherty distributed amplifier of the present invention.
[0017] Figure 8 shows a hybrid mode power amplifier system in accordance with the invention. DETAILED DESCRIPTION OF THE INVENTION
[0018] In general, the present invention, involves the use of a single- ended dual-feed distributed (SEDFD) amplifying method with an N-way Doherty amplifier structure, so as to achieve high gain and high efficiency performances at high output back-off power. In some embodiments, the gain and efficiency performance is also maximized by adjusting the gate bias of N-way peaking amplifiers and shunt capacitors at the-end of the-half-wave length gate and drain lines, respectively. Compared to conventional N-way Doherty amplifiers, therefore, the present invention achieves higher power added efficiency (PAE) and higher gain for the multiplexing modulated signals. The method and apparatus provided by the present invention is therefore referred as an N-way
Doherty Distributed Power Amplifier (NWDPA) hereafter.
Various embodiments of the NWDPA according to the present invention will now be described in detail with reference to the accompanying drawings.
[0019] Figure 1 is a schematic diagram showing an N-way Doherty amplifier using the SEDFD method of the present invention. The RF input signal 101 is provided as an input to main SEDFD amplifier 108 and peaking SEFDF amplifier 107 by means of a power splitter. Each SEDFD amplifier consists of two transmission lines 109, 110, 111 , 112 and N multiple transistors 113, 114. All transistors 113, 114 in the SEDFD main amplifier 107 and peaking amplifier 108 are connected by both gate and drain lines 109, 110, 111 , 112 with a half- wave length at the center frequency and operate identically. The input signal of the SEDFD amplifier 107, 108 is distributed along the gate line 109, 111 and the amplified output signal is combined along the drain line 110, 112. Since each transistor adds power in phase to the signal, the SEDFD amplifier 107, 108 is able to provide higher gain. A λ/4 microstrip line 103 is prior to the SEDFD peaking amplifier 107 in order to synchronize the phases between the SEDFD main amplifier 108 and the SEDFD peaking amplifier 107. The output signal of the SEDFD main amplifier 108 is passed through a microstrip λ/4 impedance transformer 104 and combined with the output signal of the SEDFD peaking amplifier 107 by the power combiner- 105-
[0020] Figure 2 is a graph showing efficiency characteristics of an
NWDPA at various output back-off power. The efficiency of the NWDPA for the maximum power level is given by π
and the efficiency for the medium power level is given by
Figure imgf000007_0001
where v0 and vmax are the output voltage and the maximum output voltage, respectively, M is the number of transistors for the main amplifier, and P the number of transistors for the peaking amplifier. Depending upon the embodiment, the main and peaking amplifiers can be either single transistors or multiple transistors, or other forms of amplifiers. In addition, the transistors can be discrete or integrated, again depending upon the embodiment. For the low power level, the efficiency of the NWDPA is expressed as π ( P Λ v η = - \ — + 1 — — ■
4 U J vmκ [0021] The efficiency of the amplifier for various levels of output back-off power is calculated as a function of the number of the main and peaking amplifiers. The relationship between the extended back-off state XBO and the number of main and peaking amplifiers is given by
Λfβo = 20 logl0(-£- + l) .
M
[0022] FIG 3. is a schematic diagram showing an embodiment of a 3-way Doherty SEDFD amplifier of the present invention. In order to provide high efficiency at a back-off power of 9.5 dB, the amplifier consists of one main amplifier 203 and two peaking amplifiers 204, 205 using the same type of transistors. The RF input signal 201 is passed through a 90° hybrid coupler 202 and divided to a main amplifier 203 and two peaking amplifiers 204, 205. Input impedance matching circuits 206, 207, 208 are connected between the coupler and the main amplifier 203 and the peaking amplifiers 204, 205, respectively. In at least some embodiments, the main amplifier 203 is biased as a Class-AB amplifier and the peaking amplifiers 204, 205 biased as Class-C amplifiers. If the main amplifier is generally biased in Class AB mode, it will have a gain compression characteristic. In contrast, if the peaking amplifier is generally biased in Class C mode, it will have a gain expansion characteristic. In at least some embodiments, the present invention takes advantage of the complimentary characterists, so that the gain compression of the Class AB main amplifier will be compensated by the gain expansion of the Class C peaking amplifiers to create a more linear power amplifier. [0023] In order to achieve optimized power, output impedance matching circuits 209, 210, 211 are connected to the outputs of the main amplifier 203 and the peaking amplifiers 204, 205. A shunt capacitor CM 212 is connected to the output impedance matching circuit 209 of the main amplifier 203 so as to optimize the linearity of the NWDPA based on the linearity optimized Doherty amplifier method of U.S. provisional application No. 60/846,905 filed on Nov.
2006, incorporated herein by reference. To obtain peak efficiency point at a desired output back-off power, compensation lines 213 are inserted between
-output - impedance matching circuits 209, 210, 211 and λ/4 impedance transformers 214, 215. The peaking amplifiers 204, 205 are combined using the dual-feed distributed structure which has, in some embodiments, half-wave micro-strip lines 217, 218 at each gate and drain of the first peaking amplifier, shown as a FET for purposes of illustration and clarity. In Figure 3, the peaking amplifier 1 is combined with the peaking amplifier 2 using a dual-feed distributed structure. The dual-feed distributed structure comprises the half wavelength and quarter wavelength lines and short-circuited quarter-wave length micro-strip lines 219, 220 at each gate and drain of the second peaking amplifier, respectively, connected through the associated input and output impedance matching circuits. The second peaking amplifier is shown in the illustrated embodiment as a single transistor for purposes of simplicity, but could be one or more transistors. The quarter wavelength transmission lines at the output could in some embodiments be replaced by a hybrid coupler. [0024] The half-wave lines 217 and 218 are, in some embodiments, set at the center frequency of the operating power amplifier bandwidth. Shunt capacitors CP 221 , 222 are connected in some embodiments to both ends of the short-circuited quarter-wave length micro-strip lines 219, 220 for optimizing both gain and efficiency characteristics of the NWDPA. Offset line 213 can be included to prevent leakage power between the main amplifier 203 and the peaking amplifiers 204, 205. In some embodiments, the hybrid coupler 202 will cause some gain compression, and this can be compensated by the gain expansion of the peaking amplifiers. An additional hybrid coupler can be connected at the output in some embodiments. Further, those skilled in the art will appreciate that the main distributed amplifiers and peaking distributed amplifiers can be constructed either as separate miniature microwave integrated circuits or on one integrated MMIC. [0025] In examining the performance of NWDPA, a 42 dBm high power amplifier is designed and implemented by using LDMOS FET's with p1dB of
150 W.
[0026] Figure 4 is a graph showing simulation results of gain and PAE for a single tone signal at the frequency of 2140 MHz using a 3-way Doherty distributed amplifier such as shown in Figure 3. The operating point of the Class AB biased main amplifier is: /DQ = 510 mA, VGs = 3.82 V and VDs = 27 V.
The operating points of the Class C biased peaking amplifiers are: 1) Peaking amplifier 1; IDQ = 0 mA, VGS = 2.4 V and VDs = 27 V, 2) Peaking amplifier 2; IDQ = 0 mA, VGS = 2.6 V and VDS = 27 V. The output impedance of the combined peaking amplifier using a dual-feed distributed structure is 4.65+J2.1Ω. An offset line of approximately 0.25λ was inserted; this corresponds to an optimum output resistance of 521 Ω. From the simulated results, 43% PAE was obtained at a peak envelope power (PEP) of around 200 W. Consequently, a 40% PAE at 9.5 dB back-off power from the peak efficiency point was achieved. This was an efficiency improvement of approximately 7 % in comparison to that of the 2-way conventional Doherty amplifier at a 6 dB peaking point, also shown in Figure 4. A gain of approximately 10.5 dB was obtained from 2130 to 2150 MHz. [0027] Figure 5 is a graph showing measurement results of gain and PAE of the 3-way Doherty distributed amplifier of the present invention. The main amplifier's operating point is: IDQ = 480 mA, VGS = 3.9 V. The operating points of the peaking amplifiers are: 1) Peaking amplifier 1; IDQ = 0 mA, VQS = 2.1 V; 2)
Peaking amplifier 2; IDQ = 0 mA, VGS = 1.9 V. The shunt capacitors, CP and CM, of 15pF and 0.5 pF are used, respectively. A 42.7% PAE at PEP of 131 W and 39.5% PAE at 9.5 dB- back off are- achieved, respectively. -A gain of approximately 11 dB was obtained at 9.5 dB back off. [0028] Figure 6 is a graph showing measurement results of gain and PAE performance variation as a function of the shunt capacitor and bias voltage of peaking amplifiers for single-tone signal using the 3-way Doherty distributed amplifier of the present invention. Optimization of O and the bias point of the two-peaking amplifiers produced efficiency and gain improvement of approximately 8% and 2 dB at 9.5 dB back off, even though the PAE is reduced at PEP.
[0029] Figure 7 is a graph showing measurement results of spectrum for a single WCDMA carrier using a 3-way Doherty distributed amplifier in accordance with the present invention. The operating points were VGs = 3.79 V (Main PA), VGS = 3.1 V (Peaking PA1) and VGS = 2.5V (Peaking PA2), respectively. The shunt capacitors, Cp and CM, of 9.1 pF and 0.5 pF were used, respectively. In order to achieve high linearity, both memoryless and memory- based digital predistortion were applied. The ACLR performances of -51 dBc after memoryless and -54 dBc after memory compensation were obtained at 41 dBm output power and +2.5 MHz offset frequency. [0030] In summary, the NWDPA of the present invention, compared to the conventional N-way Doherty amplifier, improves the gain performance more effectively since the NWDPA uses a SEDFD structure in conjunction with a Doherty amplifier. A hybrid mode power amplifier system in accordance with the invention is shown in Figure δ, in which a modulated RF input signal 800 is provided to a digital predistortion controller 805, which in turn provides its output to a power amplifier 810 in accordance with the present invention. The RF output 815 is monitored, and a signal representative of the output is fed back to the controller 805 as a feedback signal 820. [0031] Although the present invention has been described with reference to the preferred embodiments, it will be understood that the invention is not limited to the details described thereof. Various substitutions and modifications are disclosed in the foregoing description, and others will be apparent to those of ordinary skill in the art based on the teachings herein. Therefore, all such substitutions and modifications are intended to be embraced within the scope of the invention as defined in the appended claims.

Claims

What Is Claimed Is:
1. An N-way Doherty distributed amplifier comprising: an RF input, at least one main distributed amplifier, at least two peaking distributed amplifiers, hybrid coupler responsive to an input signal for providing input to the at least one main distributed amplifier and the at least two peaking disthr3uted~amplifιers,Tespectively, and phase synchronizer responsive to the RF input for synchronizing the phase between the at least one main distributed amplifier and the at least two peaking distributed amplifiers.
2. The N-way Doherty distributed amplifier of claim 1 wherein the RF input is single-ended dual-feed.
3. The N-way Doherty distributed amplifier of claim 1 wherein all transistors in the at least one main distributed amplifier and the at least two peaking distributed amplifiers operate substantially identically.
4. The N-way Doherty distributed amplifier of claim 1 wherein gain compression of the at least one main distributed amplifier is compensated by gain expansion of the at least two peaking distributed amplifiers.
5. The N-way Doherty distributed amplifier of claim 1 further comprising shunt capacitors operatively connected to the at least one main distributed amplifier and the at least two peaking distributed amplifiers, and wherein phase of the main and peaking distributed amplifiers is controlled by the capacitance of the shunt capacitors.
6. The N-way Doherty distributed amplifier of claim 1 wherein efficiency of the amplifier at various output back-off power is determined as a function of the number of the main and peaking amplifiers given by the following equation:
4 1 M J V. wherein v0 and vmax are the output voltage and the maximum output voltage, respectively, M is the number of transistor for the main amplifier, and P the number of transistors for the peaking amplifier.
7. A N-way Doherty distributed amplifier of claim 1 wherein an extended back-off state XBO is described by the following equation:
XBO = 20 \oglQ(-^- + \) . M
8. The N-way Doherty distributed amplifier of claim 1 wherein the N-way Doherty distributed amplifier configured as a main amplifier of a feed-forward linearization technique.
9. The N-way Doherty distributed amplifier of claim 1 wherein the N-way Doherty distributed amplifier receives an input from a digital pre-distorter.
10. The N-way Doherty distributed amplifier of claim 1 wherein the main distributed amplifiers and peaking distributed amplifiers one of a group comprising, first, separate miniature microwave integrated circuits and, second, one integrated MMIC.
11. The N-way Doherty distributed amplifier of claim 1 wherein the phase synchronizer delays the phase of the peaking amplifier later than the phase of the main amplifier by approximately 90°.
12. The N-way Doherty distributed amplifier of claim 1 wherein the phase synchronizer comprises a λ/4 microstrip line prior to the peaking amplifiers to synchronize the phases between the main distributed amplifiers and the peaking distributed amplifiers.
13. -The N-way Doherty distributed amplifier of claim 1-further comprising input impedance matching circuits connected to front ends of the main distributed amplifiers and the peaking distributed amplifiers, respectively.
14. The N-way Doherty distributed amplifier of claim 1 further comprising gate and drain lines connected to the at least one main distributed amplifier and the at least two peaking distributed amplifiers, the gate and drain lines having a half- wave length at the center frequency of the power amplifier.
15. The N-way Doherty distributed amplifier of claim 1 further comprising output impedance matching circuits connected to at least one output of the at least one main distributed amplifier and the at least two peaking distributed amplifier.
16. The N-way Doherty distributed amplifier of claim 1 further comprising at least one offset line inserted between ends of the output impedance matching circuits for the main distributed amplifiers and the peaking distributed amplifiers to prevent leakage of power from the main distributed amplifier to the peaking distributed amplifier.
17. The N-way Doherty distributed amplifier of claim 1 further comprising a λ/4 impedance transformer for characteristic impedance Z0 connected to the offset lines.
PCT/IB2008/003079 2007-04-23 2008-04-23 N-way doherty distributed power amplifier WO2009031042A2 (en)

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CN102089966B (en) 2016-02-03
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EP2145385A2 (en) 2010-01-20
KR101484796B1 (en) 2015-01-20
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US7688135B2 (en) 2010-03-30
US20080284509A1 (en) 2008-11-20
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EP2145385B1 (en) 2018-10-17
JP2010530148A (en) 2010-09-02

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