WO2009032153A3 - Memory device interface methods, apparatus, and systems - Google Patents
Memory device interface methods, apparatus, and systems Download PDFInfo
- Publication number
- WO2009032153A3 WO2009032153A3 PCT/US2008/010188 US2008010188W WO2009032153A3 WO 2009032153 A3 WO2009032153 A3 WO 2009032153A3 US 2008010188 W US2008010188 W US 2008010188W WO 2009032153 A3 WO2009032153 A3 WO 2009032153A3
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- WO
- WIPO (PCT)
- Prior art keywords
- memory die
- systems
- twi
- memory device
- device interface
- Prior art date
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F13/00—Interconnection of, or transfer of information or other signals between, memories, input/output devices or central processing units
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/06—Arrangements for interconnecting storage elements electrically, e.g. by wiring
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L25/0652—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00 the devices being arranged next and on each other, i.e. mixed assemblies
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L25/0657—Stacked arrangements of devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05573—Single external layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/1302—Disposition
- H01L2224/13025—Disposition the bump connector being disposed on a via connection of the semiconductor or solid-state body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16135—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/16145—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
- H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L2225/06503—Stacked arrangements of devices
- H01L2225/06513—Bump or bump-like direct electrical connections between devices, e.g. flip-chip connection, solder bumps
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
- H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L2225/06503—Stacked arrangements of devices
- H01L2225/06541—Conductive via connections through the device, e.g. vertical interconnects, through silicon via [TSV]
Abstract
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2008801087255A CN101809738B (en) | 2007-08-29 | 2008-08-28 | Memory device interface methods, apparatus, and systems |
KR1020147018063A KR101460955B1 (en) | 2007-08-29 | 2008-08-28 | Memory device interface methods, apparatus, and systems |
KR1020107006657A KR101382985B1 (en) | 2007-08-29 | 2008-08-28 | Memory device interface methods, apparatus, and systems |
JP2010522950A JP5354390B2 (en) | 2007-08-29 | 2008-08-28 | Memory device interface method, apparatus, and system |
KR1020137033071A KR101460936B1 (en) | 2007-08-29 | 2008-08-28 | Memory device interface methods, apparatus, and systems |
EP08795662A EP2195841A2 (en) | 2007-08-29 | 2008-08-28 | Memory device interface methods, apparatus, and systems |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/847,113 US7623365B2 (en) | 2007-08-29 | 2007-08-29 | Memory device interface methods, apparatus, and systems |
US11/847,113 | 2007-08-29 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2009032153A2 WO2009032153A2 (en) | 2009-03-12 |
WO2009032153A3 true WO2009032153A3 (en) | 2009-07-09 |
Family
ID=40344981
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2008/010188 WO2009032153A2 (en) | 2007-08-29 | 2008-08-28 | Memory device interface methods, apparatus, and systems |
Country Status (7)
Country | Link |
---|---|
US (5) | US7623365B2 (en) |
EP (1) | EP2195841A2 (en) |
JP (2) | JP5354390B2 (en) |
KR (3) | KR101460955B1 (en) |
CN (1) | CN101809738B (en) |
TW (1) | TWI470740B (en) |
WO (1) | WO2009032153A2 (en) |
Families Citing this family (103)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008204581A (en) * | 2007-02-22 | 2008-09-04 | Elpida Memory Inc | Nonvolatile ram |
US7623365B2 (en) * | 2007-08-29 | 2009-11-24 | Micron Technology, Inc. | Memory device interface methods, apparatus, and systems |
US8120958B2 (en) * | 2007-12-24 | 2012-02-21 | Qimonda Ag | Multi-die memory, apparatus and multi-die memory stack |
US9229887B2 (en) * | 2008-02-19 | 2016-01-05 | Micron Technology, Inc. | Memory device with network on chip methods, apparatus, and systems |
US7978721B2 (en) | 2008-07-02 | 2011-07-12 | Micron Technology Inc. | Multi-serial interface stacked-die memory architecture |
US8106520B2 (en) | 2008-09-11 | 2012-01-31 | Micron Technology, Inc. | Signal delivery in stacked device |
US8086913B2 (en) | 2008-09-11 | 2011-12-27 | Micron Technology, Inc. | Methods, apparatus, and systems to repair memory |
US9063874B2 (en) | 2008-11-10 | 2015-06-23 | SanDisk Technologies, Inc. | Apparatus, system, and method for wear management |
CN102272731A (en) * | 2008-11-10 | 2011-12-07 | 弗森-艾奥公司 | Apparatus, system, and method for predicting failures in solid-state storage |
US8549092B2 (en) | 2009-02-19 | 2013-10-01 | Micron Technology, Inc. | Memory network methods, apparatus, and systems |
US7894230B2 (en) | 2009-02-24 | 2011-02-22 | Mosaid Technologies Incorporated | Stacked semiconductor devices including a master device |
US9779057B2 (en) | 2009-09-11 | 2017-10-03 | Micron Technology, Inc. | Autonomous memory architecture |
US8612809B2 (en) | 2009-12-31 | 2013-12-17 | Intel Corporation | Systems, methods, and apparatuses for stacked memory |
US9922622B2 (en) * | 2010-02-26 | 2018-03-20 | Synaptics Incorporated | Shifting carrier frequency to avoid interference |
US20110230711A1 (en) * | 2010-03-16 | 2011-09-22 | Kano Akihito | Endoscopic Surgical Instrument |
US9123552B2 (en) * | 2010-03-30 | 2015-09-01 | Micron Technology, Inc. | Apparatuses enabling concurrent communication between an interface die and a plurality of dice stacks, interleaved conductive paths in stacked devices, and methods for forming and operating the same |
US9287239B2 (en) | 2010-04-26 | 2016-03-15 | Rambus Inc. | Techniques for interconnecting stacked dies using connection sites |
US8595429B2 (en) * | 2010-08-24 | 2013-11-26 | Qualcomm Incorporated | Wide input/output memory with low density, low latency and high density, high latency blocks |
US8793419B1 (en) * | 2010-11-22 | 2014-07-29 | Sk Hynix Memory Solutions Inc. | Interface between multiple controllers |
WO2012100087A2 (en) | 2011-01-19 | 2012-07-26 | Fusion-Io, Inc. | Apparatus, system, and method for managing out-of-service conditions |
CN102148761B (en) * | 2011-04-11 | 2013-11-20 | 北京星网锐捷网络技术有限公司 | Communication interface chip, communication equipment and method for realizing energy saving of communication interface |
KR101662576B1 (en) * | 2011-12-02 | 2016-10-05 | 인텔 코포레이션 | Stacked memory with interface providing offset interconnects |
US9236143B2 (en) | 2011-12-28 | 2016-01-12 | Intel Corporation | Generic address scrambler for memory circuit test engine |
US9239355B1 (en) * | 2012-03-06 | 2016-01-19 | Inphi Corporation | Memory test sequencer |
WO2013147841A1 (en) * | 2012-03-30 | 2013-10-03 | Intel Corporation | Generic address scrambler for memory circuit test engine |
US9298573B2 (en) | 2012-03-30 | 2016-03-29 | Intel Corporation | Built-in self-test for stacked memory architecture |
US9251019B2 (en) | 2012-05-29 | 2016-02-02 | SanDisk Technologies, Inc. | Apparatus, system and method for managing solid-state retirement |
US9697147B2 (en) | 2012-08-06 | 2017-07-04 | Advanced Micro Devices, Inc. | Stacked memory device with metadata management |
KR20140027859A (en) | 2012-08-27 | 2014-03-07 | 삼성전자주식회사 | Host device and system including the same |
JP5968736B2 (en) | 2012-09-14 | 2016-08-10 | ルネサスエレクトロニクス株式会社 | Semiconductor device |
US9431064B2 (en) * | 2012-11-02 | 2016-08-30 | Taiwan Semiconductor Manufacturing Company, Ltd. | Memory circuit and cache circuit configuration |
US20140138815A1 (en) * | 2012-11-20 | 2014-05-22 | Nvidia Corporation | Server processing module |
US9065722B2 (en) * | 2012-12-23 | 2015-06-23 | Advanced Micro Devices, Inc. | Die-stacked device with partitioned multi-hop network |
US9190133B2 (en) * | 2013-03-11 | 2015-11-17 | Micron Technology, Inc. | Apparatuses and methods for a memory die architecture including an interface memory |
US9679615B2 (en) | 2013-03-15 | 2017-06-13 | Micron Technology, Inc. | Flexible memory system with a controller and a stack of memory |
US10089043B2 (en) | 2013-03-15 | 2018-10-02 | Micron Technology, Inc. | Apparatus and methods for a distributed memory system including memory nodes |
US9286948B2 (en) | 2013-07-15 | 2016-03-15 | Advanced Micro Devices, Inc. | Query operations for stacked-die memory device |
US9779138B2 (en) | 2013-08-13 | 2017-10-03 | Micron Technology, Inc. | Methods and systems for autonomous memory searching |
US9230940B2 (en) * | 2013-09-13 | 2016-01-05 | Globalfoundries Inc. | Three-dimensional chip stack for self-powered integrated circuit |
US10003675B2 (en) | 2013-12-02 | 2018-06-19 | Micron Technology, Inc. | Packet processor receiving packets containing instructions, data, and starting location and generating packets containing instructions and data |
KR102197069B1 (en) | 2014-02-04 | 2020-12-30 | 삼성전자 주식회사 | Image sensor and image processing device |
US20150234726A1 (en) * | 2014-02-19 | 2015-08-20 | Brian P. Moran | Apparatus, system and method to provide platform support for multiple memory technologies |
US8947931B1 (en) * | 2014-06-13 | 2015-02-03 | Sandisk Technologies Inc. | Memory module |
US9875185B2 (en) * | 2014-07-09 | 2018-01-23 | Intel Corporation | Memory sequencing with coherent and non-coherent sub-systems |
KR102204391B1 (en) | 2014-08-18 | 2021-01-18 | 삼성전자주식회사 | Memory device having sharable ECC (Error Correction Code) cell array |
TWI556247B (en) | 2014-11-12 | 2016-11-01 | 財團法人工業技術研究院 | Fault-tolerance through silicon via interface and controlling method thereof |
US9917026B2 (en) | 2014-12-24 | 2018-03-13 | Renesas Electronics Corporation | Semiconductor device |
KR102336455B1 (en) | 2015-01-22 | 2021-12-08 | 삼성전자주식회사 | Integrated circuit and storage device including integrated circuit |
KR102222445B1 (en) | 2015-01-26 | 2021-03-04 | 삼성전자주식회사 | Memory system including plurality of dram devices operating selectively |
JP6429647B2 (en) | 2015-01-26 | 2018-11-28 | ルネサスエレクトロニクス株式会社 | Semiconductor device |
KR102373543B1 (en) * | 2015-04-08 | 2022-03-11 | 삼성전자주식회사 | Method and device for controlling operation using temperature deviation in multi-chip package |
US9570142B2 (en) | 2015-05-18 | 2017-02-14 | Micron Technology, Inc. | Apparatus having dice to perorm refresh operations |
KR102401109B1 (en) | 2015-06-03 | 2022-05-23 | 삼성전자주식회사 | Semiconductor package |
US10241941B2 (en) | 2015-06-29 | 2019-03-26 | Nxp Usa, Inc. | Systems and methods for asymmetric memory access to memory banks within integrated circuit systems |
CN106711139B (en) * | 2015-11-18 | 2019-09-17 | 凌阳科技股份有限公司 | Polycrystalline born of the same parents' chip |
KR102451156B1 (en) | 2015-12-09 | 2022-10-06 | 삼성전자주식회사 | Semiconductor memory device having rank interleaving operation in memory module |
US10390114B2 (en) * | 2016-07-22 | 2019-08-20 | Intel Corporation | Memory sharing for physical accelerator resources in a data center |
EP3518285A4 (en) * | 2016-09-23 | 2020-07-29 | Toshiba Memory Corporation | Memory device |
US10381327B2 (en) | 2016-10-06 | 2019-08-13 | Sandisk Technologies Llc | Non-volatile memory system with wide I/O memory die |
US10490251B2 (en) | 2017-01-30 | 2019-11-26 | Micron Technology, Inc. | Apparatuses and methods for distributing row hammer refresh events across a memory device |
WO2018182648A1 (en) * | 2017-03-30 | 2018-10-04 | Intel Corporation | Apparatus with multi-wafer based device and method for forming such |
US10541010B2 (en) * | 2018-03-19 | 2020-01-21 | Micron Technology, Inc. | Memory device with configurable input/output interface |
KR102457825B1 (en) * | 2018-04-10 | 2022-10-24 | 에스케이하이닉스 주식회사 | Semiconductor system |
US10998291B2 (en) * | 2018-05-07 | 2021-05-04 | Micron Technology, Inc. | Channel routing for memory devices |
CN112106138B (en) | 2018-05-24 | 2024-02-27 | 美光科技公司 | Apparatus and method for pure time adaptive sampling for row hammer refresh sampling |
US11152050B2 (en) | 2018-06-19 | 2021-10-19 | Micron Technology, Inc. | Apparatuses and methods for multiple row hammer refresh address sequences |
US10573370B2 (en) | 2018-07-02 | 2020-02-25 | Micron Technology, Inc. | Apparatus and methods for triggering row hammer address sampling |
US10685696B2 (en) | 2018-10-31 | 2020-06-16 | Micron Technology, Inc. | Apparatuses and methods for access based refresh timing |
WO2020117686A1 (en) | 2018-12-03 | 2020-06-11 | Micron Technology, Inc. | Semiconductor device performing row hammer refresh operation |
CN111354393B (en) | 2018-12-21 | 2023-10-20 | 美光科技公司 | Apparatus and method for timing interleaving for targeted refresh operations |
US10957377B2 (en) | 2018-12-26 | 2021-03-23 | Micron Technology, Inc. | Apparatuses and methods for distributed targeted refresh operations |
US10770127B2 (en) | 2019-02-06 | 2020-09-08 | Micron Technology, Inc. | Apparatuses and methods for managing row access counts |
US11615831B2 (en) | 2019-02-26 | 2023-03-28 | Micron Technology, Inc. | Apparatuses and methods for memory mat refresh sequencing |
US11043254B2 (en) | 2019-03-19 | 2021-06-22 | Micron Technology, Inc. | Semiconductor device having cam that stores address signals |
US11227649B2 (en) | 2019-04-04 | 2022-01-18 | Micron Technology, Inc. | Apparatuses and methods for staggered timing of targeted refresh operations |
US11264096B2 (en) | 2019-05-14 | 2022-03-01 | Micron Technology, Inc. | Apparatuses, systems, and methods for a content addressable memory cell with latch and comparator circuits |
US11158364B2 (en) | 2019-05-31 | 2021-10-26 | Micron Technology, Inc. | Apparatuses and methods for tracking victim rows |
US11069393B2 (en) | 2019-06-04 | 2021-07-20 | Micron Technology, Inc. | Apparatuses and methods for controlling steal rates |
US10978132B2 (en) | 2019-06-05 | 2021-04-13 | Micron Technology, Inc. | Apparatuses and methods for staggered timing of skipped refresh operations |
US11158373B2 (en) | 2019-06-11 | 2021-10-26 | Micron Technology, Inc. | Apparatuses, systems, and methods for determining extremum numerical values |
US11139015B2 (en) | 2019-07-01 | 2021-10-05 | Micron Technology, Inc. | Apparatuses and methods for monitoring word line accesses |
US10832792B1 (en) | 2019-07-01 | 2020-11-10 | Micron Technology, Inc. | Apparatuses and methods for adjusting victim data |
US11386946B2 (en) | 2019-07-16 | 2022-07-12 | Micron Technology, Inc. | Apparatuses and methods for tracking row accesses |
US10943636B1 (en) | 2019-08-20 | 2021-03-09 | Micron Technology, Inc. | Apparatuses and methods for analog row access tracking |
US10964378B2 (en) | 2019-08-22 | 2021-03-30 | Micron Technology, Inc. | Apparatus and method including analog accumulator for determining row access rate and target row address used for refresh operation |
US11200942B2 (en) | 2019-08-23 | 2021-12-14 | Micron Technology, Inc. | Apparatuses and methods for lossy row access counting |
US11302374B2 (en) | 2019-08-23 | 2022-04-12 | Micron Technology, Inc. | Apparatuses and methods for dynamic refresh allocation |
US11302377B2 (en) | 2019-10-16 | 2022-04-12 | Micron Technology, Inc. | Apparatuses and methods for dynamic targeted refresh steals |
WO2022015741A1 (en) * | 2020-07-14 | 2022-01-20 | Micron Technology, Inc. | Multiplexed memory device interface and method |
CN112088406B (en) * | 2020-08-06 | 2023-10-03 | 长江存储科技有限责任公司 | Multi-die peak power management for three-dimensional memory |
US11309010B2 (en) | 2020-08-14 | 2022-04-19 | Micron Technology, Inc. | Apparatuses, systems, and methods for memory directed access pause |
US11348631B2 (en) | 2020-08-19 | 2022-05-31 | Micron Technology, Inc. | Apparatuses, systems, and methods for identifying victim rows in a memory device which cannot be simultaneously refreshed |
US11380382B2 (en) | 2020-08-19 | 2022-07-05 | Micron Technology, Inc. | Refresh logic circuit layout having aggressor detector circuit sampling circuit and row hammer refresh control circuit |
US11222682B1 (en) | 2020-08-31 | 2022-01-11 | Micron Technology, Inc. | Apparatuses and methods for providing refresh addresses |
US11557331B2 (en) | 2020-09-23 | 2023-01-17 | Micron Technology, Inc. | Apparatuses and methods for controlling refresh operations |
US11222686B1 (en) | 2020-11-12 | 2022-01-11 | Micron Technology, Inc. | Apparatuses and methods for controlling refresh timing |
US11462291B2 (en) | 2020-11-23 | 2022-10-04 | Micron Technology, Inc. | Apparatuses and methods for tracking word line accesses |
KR20220083291A (en) | 2020-12-11 | 2022-06-20 | 삼성전자주식회사 | A memory system and an electronic system including the memory system |
US11264079B1 (en) | 2020-12-18 | 2022-03-01 | Micron Technology, Inc. | Apparatuses and methods for row hammer based cache lockdown |
US11482275B2 (en) | 2021-01-20 | 2022-10-25 | Micron Technology, Inc. | Apparatuses and methods for dynamically allocated aggressor detection |
US11600314B2 (en) | 2021-03-15 | 2023-03-07 | Micron Technology, Inc. | Apparatuses and methods for sketch circuits for refresh binning |
US11664063B2 (en) | 2021-08-12 | 2023-05-30 | Micron Technology, Inc. | Apparatuses and methods for countering memory attacks |
US11688451B2 (en) | 2021-11-29 | 2023-06-27 | Micron Technology, Inc. | Apparatuses, systems, and methods for main sketch and slim sketch circuit for row address tracking |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02287847A (en) * | 1989-04-28 | 1990-11-27 | Ricoh Co Ltd | Electronic equipment |
US6141744A (en) * | 1997-03-24 | 2000-10-31 | Texas Instruments Incorporated | PC circuits, systems and methods |
US20030197281A1 (en) * | 2002-04-19 | 2003-10-23 | Farnworth Warren M. | Integrated circuit package having reduced interconnects |
US20040064599A1 (en) * | 2002-09-27 | 2004-04-01 | Jahnke Steven R. | Configurable memory controller for advanced high performance bus system |
US20050189639A1 (en) * | 2004-03-01 | 2005-09-01 | Hitachi, Ltd. | Semiconductor device |
US20060233012A1 (en) * | 2005-03-30 | 2006-10-19 | Elpida Memory, Inc. | Semiconductor storage device having a plurality of stacked memory chips |
US20070048994A1 (en) * | 2005-09-01 | 2007-03-01 | Tuttle Mark E | Methods for forming through-wafer interconnects and structures resulting therefrom |
US20070120569A1 (en) * | 2005-11-02 | 2007-05-31 | Sony Corporation | Communication semiconductor chip, calibration method, and program |
Family Cites Families (50)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5347428A (en) | 1992-12-03 | 1994-09-13 | Irvine Sensors Corporation | Module comprising IC memory stack dedicated to and structurally combined with an IC microprocessor chip |
JP2605968B2 (en) * | 1993-04-06 | 1997-04-30 | 日本電気株式会社 | Semiconductor integrated circuit and method of forming the same |
JP3354937B2 (en) | 1993-04-23 | 2002-12-09 | イルビン センサーズ コーポレーション | An electronic module including a stack of IC chips each interacting with an IC chip fixed to the surface of the stack. |
US5567654A (en) * | 1994-09-28 | 1996-10-22 | International Business Machines Corporation | Method and workpiece for connecting a thin layer to a monolithic electronic module's surface and associated module packaging |
US5807791A (en) | 1995-02-22 | 1998-09-15 | International Business Machines Corporation | Methods for fabricating multichip semiconductor structures with consolidated circuitry and programmable ESD protection for input/output nodes |
US5815427A (en) | 1997-04-02 | 1998-09-29 | Micron Technology, Inc. | Modular memory circuit and method for forming same |
US7301748B2 (en) | 1997-04-08 | 2007-11-27 | Anthony Anthony A | Universal energy conditioning interposer with circuit architecture |
US6038133A (en) | 1997-11-25 | 2000-03-14 | Matsushita Electric Industrial Co., Ltd. | Circuit component built-in module and method for producing the same |
US5982027A (en) | 1997-12-10 | 1999-11-09 | Micron Technology, Inc. | Integrated circuit interposer with power and ground planes |
US6081463A (en) | 1998-02-25 | 2000-06-27 | Micron Technology, Inc. | Semiconductor memory remapping |
US6600364B1 (en) | 1999-01-05 | 2003-07-29 | Intel Corporation | Active interposer technology for high performance CMOS packaging application |
US6461895B1 (en) | 1999-01-05 | 2002-10-08 | Intel Corporation | Process for making active interposer for high performance packaging applications |
US20030214800A1 (en) | 1999-07-15 | 2003-11-20 | Dibene Joseph Ted | System and method for processor power delivery and thermal management |
US6376909B1 (en) | 1999-09-02 | 2002-04-23 | Micron Technology, Inc. | Mixed-mode stacked integrated circuit with power supply circuit part of the stack |
JP3879816B2 (en) * | 2000-06-02 | 2007-02-14 | セイコーエプソン株式会社 | SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD, LAMINATED SEMICONDUCTOR DEVICE, CIRCUIT BOARD AND ELECTRONIC DEVICE |
US6320812B1 (en) * | 2000-09-20 | 2001-11-20 | Agilent Technologies, Inc. | Error catch RAM for memory tester has SDRAM memory sets configurable for size and speed |
JP2002170844A (en) * | 2000-12-04 | 2002-06-14 | Oki Electric Ind Co Ltd | Semiconductor device |
JP4722305B2 (en) * | 2001-02-27 | 2011-07-13 | 富士通セミコンダクター株式会社 | Memory system |
JP2003060153A (en) * | 2001-07-27 | 2003-02-28 | Nokia Corp | Semiconductor package |
JP2004158595A (en) | 2002-11-06 | 2004-06-03 | Sanyo Electric Co Ltd | Circuit device, circuit module, and method for manufacturing circuit device |
US6856009B2 (en) | 2003-03-11 | 2005-02-15 | Micron Technology, Inc. | Techniques for packaging multiple device components |
JP4419049B2 (en) * | 2003-04-21 | 2010-02-24 | エルピーダメモリ株式会社 | Memory module and memory system |
JP4463503B2 (en) * | 2003-07-15 | 2010-05-19 | 株式会社ルネサステクノロジ | Memory module and memory system |
JP4205553B2 (en) * | 2003-11-06 | 2009-01-07 | エルピーダメモリ株式会社 | Memory module and memory system |
US7145249B2 (en) | 2004-03-29 | 2006-12-05 | Intel Corporation | Semiconducting device with folded interposer |
US7217994B2 (en) * | 2004-12-01 | 2007-05-15 | Kyocera Wireless Corp. | Stack package for high density integrated circuits |
US7400047B2 (en) | 2004-12-13 | 2008-07-15 | Agere Systems Inc. | Integrated circuit with stacked-die configuration utilizing substrate conduction |
JP4356683B2 (en) | 2005-01-25 | 2009-11-04 | セイコーエプソン株式会社 | Device mounting structure and device mounting method, droplet discharge head and connector, and semiconductor device |
JP4747621B2 (en) * | 2005-03-18 | 2011-08-17 | 日本電気株式会社 | Memory interface control circuit |
US7030317B1 (en) | 2005-04-13 | 2006-04-18 | Delphi Technologies, Inc. | Electronic assembly with stacked integrated circuit die |
JP4423453B2 (en) * | 2005-05-25 | 2010-03-03 | エルピーダメモリ株式会社 | Semiconductor memory device |
WO2007002324A2 (en) * | 2005-06-24 | 2007-01-04 | Metaram, Inc. | An integrated memory core and memory interface circuit |
US20070013080A1 (en) * | 2005-06-29 | 2007-01-18 | Intel Corporation | Voltage regulators and systems containing same |
JP4507101B2 (en) * | 2005-06-30 | 2010-07-21 | エルピーダメモリ株式会社 | Semiconductor memory device and manufacturing method thereof |
WO2007029253A2 (en) | 2005-09-06 | 2007-03-15 | Beyond Blades Ltd. | 3-dimensional multi-layered modular computer architecture |
US7464225B2 (en) * | 2005-09-26 | 2008-12-09 | Rambus Inc. | Memory module including a plurality of integrated circuit memory devices and a plurality of buffer devices in a matrix topology |
US7564066B2 (en) * | 2005-11-09 | 2009-07-21 | Intel Corporation | Multi-chip assembly with optically coupled die |
US20070126085A1 (en) | 2005-12-02 | 2007-06-07 | Nec Electronics Corporation | Semiconductor device and method of manufacturing the same |
JP2007157226A (en) | 2005-12-02 | 2007-06-21 | Fujitsu Ltd | Disk unit and data read/write method |
JP4799157B2 (en) * | 2005-12-06 | 2011-10-26 | エルピーダメモリ株式会社 | Multilayer semiconductor device |
US7279795B2 (en) | 2005-12-29 | 2007-10-09 | Intel Corporation | Stacked die semiconductor package |
JP2007188916A (en) | 2006-01-11 | 2007-07-26 | Renesas Technology Corp | Semiconductor device |
JP4753725B2 (en) | 2006-01-20 | 2011-08-24 | エルピーダメモリ株式会社 | Multilayer semiconductor device |
JP2008004853A (en) | 2006-06-26 | 2008-01-10 | Hitachi Ltd | Laminated semiconductor device, and module |
US20080001271A1 (en) * | 2006-06-30 | 2008-01-03 | Sony Ericsson Mobile Communications Ab | Flipped, stacked-chip IC packaging for high bandwidth data transfer buses |
EP3540736B1 (en) * | 2006-12-14 | 2023-07-26 | Rambus Inc. | Multi-die memory device |
US8143719B2 (en) * | 2007-06-07 | 2012-03-27 | United Test And Assembly Center Ltd. | Vented die and package |
US7623365B2 (en) | 2007-08-29 | 2009-11-24 | Micron Technology, Inc. | Memory device interface methods, apparatus, and systems |
US8106520B2 (en) | 2008-09-11 | 2012-01-31 | Micron Technology, Inc. | Signal delivery in stacked device |
US7872936B2 (en) * | 2008-09-17 | 2011-01-18 | Qimonda Ag | System and method for packaged memory |
-
2007
- 2007-08-29 US US11/847,113 patent/US7623365B2/en active Active
-
2008
- 2008-08-28 KR KR1020147018063A patent/KR101460955B1/en active IP Right Grant
- 2008-08-28 WO PCT/US2008/010188 patent/WO2009032153A2/en active Application Filing
- 2008-08-28 KR KR1020107006657A patent/KR101382985B1/en active IP Right Grant
- 2008-08-28 CN CN2008801087255A patent/CN101809738B/en active Active
- 2008-08-28 TW TW97132932A patent/TWI470740B/en active
- 2008-08-28 KR KR1020137033071A patent/KR101460936B1/en active IP Right Grant
- 2008-08-28 JP JP2010522950A patent/JP5354390B2/en active Active
- 2008-08-28 EP EP08795662A patent/EP2195841A2/en not_active Withdrawn
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- 2009-11-16 US US12/619,438 patent/US8174859B2/en active Active
-
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- 2012-05-04 US US13/464,565 patent/US8339827B2/en active Active
- 2012-11-27 US US13/686,438 patent/US8593849B2/en active Active
-
2013
- 2013-08-15 JP JP2013168771A patent/JP5643884B2/en active Active
- 2013-10-29 US US14/066,269 patent/US9001548B2/en active Active
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02287847A (en) * | 1989-04-28 | 1990-11-27 | Ricoh Co Ltd | Electronic equipment |
US6141744A (en) * | 1997-03-24 | 2000-10-31 | Texas Instruments Incorporated | PC circuits, systems and methods |
US20030197281A1 (en) * | 2002-04-19 | 2003-10-23 | Farnworth Warren M. | Integrated circuit package having reduced interconnects |
US20040064599A1 (en) * | 2002-09-27 | 2004-04-01 | Jahnke Steven R. | Configurable memory controller for advanced high performance bus system |
US20050189639A1 (en) * | 2004-03-01 | 2005-09-01 | Hitachi, Ltd. | Semiconductor device |
US20060233012A1 (en) * | 2005-03-30 | 2006-10-19 | Elpida Memory, Inc. | Semiconductor storage device having a plurality of stacked memory chips |
US20070048994A1 (en) * | 2005-09-01 | 2007-03-01 | Tuttle Mark E | Methods for forming through-wafer interconnects and structures resulting therefrom |
US20070120569A1 (en) * | 2005-11-02 | 2007-05-31 | Sony Corporation | Communication semiconductor chip, calibration method, and program |
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KR20140018383A (en) | 2014-02-12 |
JP5354390B2 (en) | 2013-11-27 |
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KR101460955B1 (en) | 2014-11-13 |
TWI470740B (en) | 2015-01-21 |
EP2195841A2 (en) | 2010-06-16 |
WO2009032153A2 (en) | 2009-03-12 |
US20120218803A1 (en) | 2012-08-30 |
KR101460936B1 (en) | 2014-11-12 |
US20140063942A1 (en) | 2014-03-06 |
KR20140100554A (en) | 2014-08-14 |
US20090059641A1 (en) | 2009-03-05 |
US8339827B2 (en) | 2012-12-25 |
US20100061134A1 (en) | 2010-03-11 |
CN101809738A (en) | 2010-08-18 |
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