WO2009032448A3 - Zwitterionic block copolymers and methods - Google Patents

Zwitterionic block copolymers and methods Download PDF

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Publication number
WO2009032448A3
WO2009032448A3 PCT/US2008/071916 US2008071916W WO2009032448A3 WO 2009032448 A3 WO2009032448 A3 WO 2009032448A3 US 2008071916 W US2008071916 W US 2008071916W WO 2009032448 A3 WO2009032448 A3 WO 2009032448A3
Authority
WO
WIPO (PCT)
Prior art keywords
block copolymers
methods
zwitterionic block
zwitterionic
disclosed
Prior art date
Application number
PCT/US2008/071916
Other languages
French (fr)
Other versions
WO2009032448A2 (en
Inventor
Dan B Millward
Eugene P Marsh
Original Assignee
Micron Technology Inc
Dan B Millward
Eugene P Marsh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc, Dan B Millward, Eugene P Marsh filed Critical Micron Technology Inc
Publication of WO2009032448A2 publication Critical patent/WO2009032448A2/en
Publication of WO2009032448A3 publication Critical patent/WO2009032448A3/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F293/00—Macromolecular compounds obtained by polymerisation on to a macromolecule having groups capable of inducing the formation of new polymer chains bound exclusively at one or both ends of the starting macromolecule
    • C08F293/005—Macromolecular compounds obtained by polymerisation on to a macromolecule having groups capable of inducing the formation of new polymer chains bound exclusively at one or both ends of the starting macromolecule using free radical "living" or "controlled" polymerisation, e.g. using a complexing agent
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/141—Organic polymers or oligomers comprising aliphatic or olefinic chains, e.g. poly N-vinylcarbazol, PVC or PTFE
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/151—Copolymers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/20—Organic diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
    • H10K71/441—Thermal treatment, e.g. annealing in the presence of a solvent vapour in the presence of solvent vapors, e.g. solvent vapour annealing

Abstract

Zwitterionic block copolymers having oppositely charged or chargeable terminal groups, and methods of making and using the same, are disclosed. The zwitterionic block copolymers can undergo microphase separation.
PCT/US2008/071916 2007-08-31 2008-08-01 Zwitterionic block copolymers and methods WO2009032448A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/897,593 2007-08-31
US11/897,593 US7732533B2 (en) 2007-08-31 2007-08-31 Zwitterionic block copolymers and methods

Publications (2)

Publication Number Publication Date
WO2009032448A2 WO2009032448A2 (en) 2009-03-12
WO2009032448A3 true WO2009032448A3 (en) 2009-08-06

Family

ID=40260486

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2008/071916 WO2009032448A2 (en) 2007-08-31 2008-08-01 Zwitterionic block copolymers and methods

Country Status (3)

Country Link
US (4) US7732533B2 (en)
TW (1) TWI434868B (en)
WO (1) WO2009032448A2 (en)

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US8394483B2 (en) 2007-01-24 2013-03-12 Micron Technology, Inc. Two-dimensional arrays of holes with sub-lithographic diameters formed by block copolymer self-assembly
US8083953B2 (en) 2007-03-06 2011-12-27 Micron Technology, Inc. Registered structure formation via the application of directed thermal energy to diblock copolymer films
US8557128B2 (en) 2007-03-22 2013-10-15 Micron Technology, Inc. Sub-10 nm line features via rapid graphoepitaxial self-assembly of amphiphilic monolayers
US8097175B2 (en) 2008-10-28 2012-01-17 Micron Technology, Inc. Method for selectively permeating a self-assembled block copolymer, method for forming metal oxide structures, method for forming a metal oxide pattern, and method for patterning a semiconductor structure
US7959975B2 (en) 2007-04-18 2011-06-14 Micron Technology, Inc. Methods of patterning a substrate
US8294139B2 (en) 2007-06-21 2012-10-23 Micron Technology, Inc. Multilayer antireflection coatings, structures and devices including the same and methods of making the same
US8372295B2 (en) 2007-04-20 2013-02-12 Micron Technology, Inc. Extensions of self-assembled structures to increased dimensions via a “bootstrap” self-templating method
US8404124B2 (en) 2007-06-12 2013-03-26 Micron Technology, Inc. Alternating self-assembling morphologies of diblock copolymers controlled by variations in surfaces
US8080615B2 (en) 2007-06-19 2011-12-20 Micron Technology, Inc. Crosslinkable graft polymer non-preferentially wetted by polystyrene and polyethylene oxide
US7732533B2 (en) * 2007-08-31 2010-06-08 Micron Technology, Inc. Zwitterionic block copolymers and methods
US8999492B2 (en) 2008-02-05 2015-04-07 Micron Technology, Inc. Method to produce nanometer-sized features with directed assembly of block copolymers
US8101261B2 (en) 2008-02-13 2012-01-24 Micron Technology, Inc. One-dimensional arrays of block copolymer cylinders and applications thereof
US8426313B2 (en) 2008-03-21 2013-04-23 Micron Technology, Inc. Thermal anneal of block copolymer films with top interface constrained to wet both blocks with equal preference
US8425982B2 (en) 2008-03-21 2013-04-23 Micron Technology, Inc. Methods of improving long range order in self-assembly of block copolymer films with ionic liquids
US8114300B2 (en) * 2008-04-21 2012-02-14 Micron Technology, Inc. Multi-layer method for formation of registered arrays of cylindrical pores in polymer films
US8114301B2 (en) 2008-05-02 2012-02-14 Micron Technology, Inc. Graphoepitaxial self-assembly of arrays of downward facing half-cylinders
US8114468B2 (en) 2008-06-18 2012-02-14 Boise Technology, Inc. Methods of forming a non-volatile resistive oxide memory array
NL2005956A (en) * 2010-02-26 2011-08-29 Asml Netherlands Bv Method and apparatus for treatment of self-assemblable polymer layers for use in lithography.
US8304493B2 (en) 2010-08-20 2012-11-06 Micron Technology, Inc. Methods of forming block copolymers
US8956804B2 (en) * 2011-06-23 2015-02-17 Asml Netherlands B.V. Self-assemblable polymer and methods for use in lithography
WO2012175342A2 (en) 2011-06-23 2012-12-27 Asml Netherlands B.V. Self-assemblable polymer and method for use in lithography
US8900963B2 (en) 2011-11-02 2014-12-02 Micron Technology, Inc. Methods of forming semiconductor device structures, and related structures
US9087699B2 (en) 2012-10-05 2015-07-21 Micron Technology, Inc. Methods of forming an array of openings in a substrate, and related methods of forming a semiconductor device structure
US11214691B2 (en) 2013-03-15 2022-01-04 Aculon, Inc Betaine polymer coatings prepared by living polymerization
US9229328B2 (en) 2013-05-02 2016-01-05 Micron Technology, Inc. Methods of forming semiconductor device structures, and related semiconductor device structures
FR3010414B1 (en) * 2013-09-09 2015-09-25 Arkema France PROCESS FOR OBTAINING NANO-STRUCTURED THICK FILMS OBTAINED FROM A BLOCK COPOLYMER COMPOSITION
FR3010413B1 (en) * 2013-09-09 2015-09-25 Arkema France METHOD FOR CONTROLLING THE PERIOD OF A NANO-STRUCTURE ASSEMBLY COMPRISING A MIXTURE OF BLOCK COPOLYMERS
US9177795B2 (en) 2013-09-27 2015-11-03 Micron Technology, Inc. Methods of forming nanostructures including metal oxides
US10150088B2 (en) 2013-11-08 2018-12-11 Tufts University Zwitterion-containing membranes

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Also Published As

Publication number Publication date
US20090062470A1 (en) 2009-03-05
US20110144275A1 (en) 2011-06-16
US8236899B2 (en) 2012-08-07
US7910660B2 (en) 2011-03-22
WO2009032448A2 (en) 2009-03-12
US20110293833A1 (en) 2011-12-01
TW200920753A (en) 2009-05-16
US8022147B2 (en) 2011-09-20
US20100204402A1 (en) 2010-08-12
TWI434868B (en) 2014-04-21
US7732533B2 (en) 2010-06-08

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