WO2009037797A1 - 表示装置の製造方法及び積層構造体 - Google Patents

表示装置の製造方法及び積層構造体 Download PDF

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Publication number
WO2009037797A1
WO2009037797A1 PCT/JP2008/001509 JP2008001509W WO2009037797A1 WO 2009037797 A1 WO2009037797 A1 WO 2009037797A1 JP 2008001509 W JP2008001509 W JP 2008001509W WO 2009037797 A1 WO2009037797 A1 WO 2009037797A1
Authority
WO
WIPO (PCT)
Prior art keywords
display device
device manufacturing
laminated structure
flexible substrate
substrate
Prior art date
Application number
PCT/JP2008/001509
Other languages
English (en)
French (fr)
Inventor
Hirohiko Nishiki
Tohru Okabe
Original Assignee
Sharp Kabushiki Kaisha
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Kabushiki Kaisha filed Critical Sharp Kabushiki Kaisha
Priority to CN200880104150XA priority Critical patent/CN101785086B/zh
Priority to US12/675,501 priority patent/US8168511B2/en
Publication of WO2009037797A1 publication Critical patent/WO2009037797A1/ja

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/1262—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate
    • H01L27/1266—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate the substrate on which the devices are formed not being the final device substrate, e.g. using a temporary substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs

Abstract

　表示装置の製造方法は、裏面に剥離層が形成された可撓性基板を準備するステップと、可撓性基板に形成した剥離層上に接着層を介して支持基板を貼り付けるステップと、支持基板を貼り付けた可撓性基板の表面に所定のデバイスを形成するステップと、デバイスを形成した可撓性基板に対し、剥離層を剥離させることにより支持基板を取り除くステップと、を備える。
PCT/JP2008/001509 2007-09-20 2008-06-12 表示装置の製造方法及び積層構造体 WO2009037797A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN200880104150XA CN101785086B (zh) 2007-09-20 2008-06-12 显示装置的制造方法和叠层构造体
US12/675,501 US8168511B2 (en) 2007-09-20 2008-06-12 Display device manufacturing method and laminated structure

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007243629 2007-09-20
JP2007-243629 2007-09-20

Publications (1)

Publication Number Publication Date
WO2009037797A1 true WO2009037797A1 (ja) 2009-03-26

Family

ID=40467627

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/001509 WO2009037797A1 (ja) 2007-09-20 2008-06-12 表示装置の製造方法及び積層構造体

Country Status (3)

Country Link
US (1) US8168511B2 (ja)
CN (1) CN101785086B (ja)
WO (1) WO2009037797A1 (ja)

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US20130105203A1 (en) * 2010-07-13 2013-05-02 Posco Flexible electronic device, method for manufacturing same, and a flexible substrate
CN103702828A (zh) * 2011-08-10 2014-04-02 英派尔科技开发有限公司 具有可去除涂层的涂布的热塑性制品
WO2014073191A1 (ja) * 2012-11-07 2014-05-15 富士フイルム株式会社 電子デバイスの製造方法および該製造方法に用いられる積層体
CN104009065A (zh) * 2014-03-20 2014-08-27 友达光电股份有限公司 面板结构及其制造方法
TWI457881B (zh) * 2010-12-28 2014-10-21 E Ink Holdings Inc 軟性電子紙顯示裝置及其製造方法
KR20150068442A (ko) 2012-11-08 2015-06-19 아사히 가세이 이-매터리얼즈 가부시키가이샤 플렉서블 디바이스용 기판, 플렉서블 디바이스 및 그 제조 방법, 적층체 및 그 제조 방법, 그리고 수지 조성물
JP2016115930A (ja) * 2014-12-11 2016-06-23 パナソニックＩｐマネジメント株式会社 電子素子の製造方法、可撓性基板の製造方法、積層基板および電子素子
JP2018065179A (ja) * 2016-10-20 2018-04-26 株式会社日本製鋼所 レーザ加工装置およびレーザ加工方法
JP2018117060A (ja) * 2017-01-19 2018-07-26 株式会社ブイ・テクノロジー 剥離基板及びレーザリフトオフ方法
JP2018195741A (ja) * 2017-05-18 2018-12-06 帝人株式会社 積層体及びフレキシブル電子デバイスの製造方法
WO2019130649A1 (ja) * 2017-12-27 2019-07-04 株式会社ジャパンディスプレイ 表示装置及びその製造方法
WO2020065856A1 (ja) * 2018-09-27 2020-04-02 シャープ株式会社 表示装置の製造方法
WO2020065966A1 (ja) * 2018-09-28 2020-04-02 シャープ株式会社 電子デバイスの製造方法
US10770672B2 (en) 2018-02-27 2020-09-08 Sakai Display Products Corporation Flexible OLED device, method for manufacturing same, and support substrate
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JP2021009849A (ja) * 2014-02-19 2021-01-28 株式会社半導体エネルギー研究所 表示装置
US11183674B2 (en) 2018-02-27 2021-11-23 Sakai Display Products Corporation Method for manufacturing flexible OLED device and support substrate

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US9991311B2 (en) 2008-12-02 2018-06-05 Arizona Board Of Regents On Behalf Of Arizona State University Dual active layer semiconductor device and method of manufacturing the same
JP5899220B2 (ja) * 2010-09-29 2016-04-06 ポスコ ロール状の母基板を利用したフレキシブル電子素子の製造方法、フレキシブル電子素子及びフレキシブル基板
KR20120042151A (ko) * 2010-10-22 2012-05-03 삼성모바일디스플레이주식회사 플렉서블 디스플레이 장치의 제조 방법
JP5926050B2 (ja) * 2011-12-22 2016-05-25 株式会社ジャパンディスプレイ 液晶表示装置
CN102769109B (zh) * 2012-07-05 2015-05-13 青岛海信电器股份有限公司 柔性显示器的制作方法以及制作柔性显示器的基板
TWI492373B (zh) * 2012-08-09 2015-07-11 Au Optronics Corp 可撓式顯示模組的製作方法
KR20140038161A (ko) * 2012-09-20 2014-03-28 한국전자통신연구원 박막 트랜지스터 및 그 제조 방법
US20140127857A1 (en) * 2012-11-07 2014-05-08 Taiwan Semiconductor Manufacturing Company, Ltd. Carrier Wafers, Methods of Manufacture Thereof, and Packaging Methods
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KR102065589B1 (ko) * 2013-04-17 2020-01-14 삼성디스플레이 주식회사 플렉서블 디스플레이 장치의 제조방법
CN104425514A (zh) * 2013-08-30 2015-03-18 群创光电股份有限公司 元件基板、显示装置及元件基板的制造方法
CN106410027B (zh) * 2013-09-24 2019-11-05 京东方科技集团股份有限公司 柔性显示基板及其制备方法、柔性显示装置
US10381224B2 (en) 2014-01-23 2019-08-13 Arizona Board Of Regents On Behalf Of Arizona State University Method of providing an electronic device and electronic device thereof
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EP3143641A4 (en) * 2014-05-13 2018-01-17 Arizona Board of Regents, a Body Corporate of the State of Arizona acting for and on behalf of Arizona State University Method of providing an electronic device and electronic device thereof
CN103985665B (zh) * 2014-05-15 2016-08-17 深圳市华星光电技术有限公司 一种柔性显示器的制作方法
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KR102296917B1 (ko) 2014-09-15 2021-09-02 삼성디스플레이 주식회사 플렉서블 디스플레이 장치 및 그 제조방법
US9741742B2 (en) 2014-12-22 2017-08-22 Arizona Board Of Regents, A Body Corporate Of The State Of Arizona, Acting For And On Behalf Of Arizona State University Deformable electronic device and methods of providing and using deformable electronic device
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CN104943320B (zh) * 2015-05-18 2017-03-08 京东方科技集团股份有限公司 一种基板的贴合方法
KR102288354B1 (ko) * 2015-08-10 2021-08-11 삼성디스플레이 주식회사 플렉서블 디스플레이 장치의 제조 방법
KR102443695B1 (ko) * 2015-08-25 2022-09-15 삼성전자주식회사 반도체 소자의 제조 방법
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KR102425705B1 (ko) * 2016-08-31 2022-07-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법
FR3068510B1 (fr) * 2017-07-03 2019-08-30 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procede de realisation d'une interface destinee a assembler temporairement un support microelectronique et une poignee de manipulation, et interface d'assemblage temporaire
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CN110556400B (zh) * 2018-05-31 2020-10-27 浙江清华柔性电子技术研究院 柔性器件的过渡装置、制备方法及柔性器件贴片的方法
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US20130105203A1 (en) * 2010-07-13 2013-05-02 Posco Flexible electronic device, method for manufacturing same, and a flexible substrate
TWI457881B (zh) * 2010-12-28 2014-10-21 E Ink Holdings Inc 軟性電子紙顯示裝置及其製造方法
CN103702828A (zh) * 2011-08-10 2014-04-02 英派尔科技开发有限公司 具有可去除涂层的涂布的热塑性制品
CN103702828B (zh) * 2011-08-10 2016-01-27 英派尔科技开发有限公司 具有可去除涂层的涂布的热塑性制品
WO2014073191A1 (ja) * 2012-11-07 2014-05-15 富士フイルム株式会社 電子デバイスの製造方法および該製造方法に用いられる積層体
KR20150068442A (ko) 2012-11-08 2015-06-19 아사히 가세이 이-매터리얼즈 가부시키가이샤 플렉서블 디바이스용 기판, 플렉서블 디바이스 및 그 제조 방법, 적층체 및 그 제조 방법, 그리고 수지 조성물
JP2021009849A (ja) * 2014-02-19 2021-01-28 株式会社半導体エネルギー研究所 表示装置
JP2022104974A (ja) * 2014-02-19 2022-07-12 株式会社半導体エネルギー研究所 表示装置
CN104009065A (zh) * 2014-03-20 2014-08-27 友达光电股份有限公司 面板结构及其制造方法
CN104009065B (zh) * 2014-03-20 2016-06-08 友达光电股份有限公司 面板结构及其制造方法
JP2016115930A (ja) * 2014-12-11 2016-06-23 パナソニックＩｐマネジメント株式会社 電子素子の製造方法、可撓性基板の製造方法、積層基板および電子素子
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JP2018065179A (ja) * 2016-10-20 2018-04-26 株式会社日本製鋼所 レーザ加工装置およびレーザ加工方法
WO2018135241A1 (ja) * 2017-01-19 2018-07-26 株式会社ブイ・テクノロジー 剥離基板及びレーザリフトオフ方法
JP2018117060A (ja) * 2017-01-19 2018-07-26 株式会社ブイ・テクノロジー 剥離基板及びレーザリフトオフ方法
JP2018195741A (ja) * 2017-05-18 2018-12-06 帝人株式会社 積層体及びフレキシブル電子デバイスの製造方法
WO2019130649A1 (ja) * 2017-12-27 2019-07-04 株式会社ジャパンディスプレイ 表示装置及びその製造方法
US10770672B2 (en) 2018-02-27 2020-09-08 Sakai Display Products Corporation Flexible OLED device, method for manufacturing same, and support substrate
US11183674B2 (en) 2018-02-27 2021-11-23 Sakai Display Products Corporation Method for manufacturing flexible OLED device and support substrate
US10903460B2 (en) 2018-03-20 2021-01-26 Sakai Display Products Corporation Flexible OLED device, method for manufacturing same, and support substrate
WO2020065856A1 (ja) * 2018-09-27 2020-04-02 シャープ株式会社 表示装置の製造方法
WO2020065966A1 (ja) * 2018-09-28 2020-04-02 シャープ株式会社 電子デバイスの製造方法
US11551975B2 (en) 2018-09-28 2023-01-10 Sharp Kabushiki Kaisha Method for manufacturing electronic device

Also Published As

Publication number Publication date
CN101785086A (zh) 2010-07-21
US8168511B2 (en) 2012-05-01
CN101785086B (zh) 2012-03-21
US20110204361A1 (en) 2011-08-25

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