WO2009108568A3 - Gas flow equalizer plate suitable for use in a substrate process chamber - Google Patents

Gas flow equalizer plate suitable for use in a substrate process chamber Download PDF

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Publication number
WO2009108568A3
WO2009108568A3 PCT/US2009/034533 US2009034533W WO2009108568A3 WO 2009108568 A3 WO2009108568 A3 WO 2009108568A3 US 2009034533 W US2009034533 W US 2009034533W WO 2009108568 A3 WO2009108568 A3 WO 2009108568A3
Authority
WO
WIPO (PCT)
Prior art keywords
flow
equalizer plate
flow equalizer
processing gas
process chamber
Prior art date
Application number
PCT/US2009/034533
Other languages
French (fr)
Other versions
WO2009108568A2 (en
Inventor
Ajit Balakrishna
Shahid Rauf
Andrew Nguyen
Michael D. Willwerth
Valentin D. Todorow
Original Assignee
Applied Materials, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials, Inc. filed Critical Applied Materials, Inc.
Priority to CN2009801070210A priority Critical patent/CN101960568B/en
Priority to KR1020137001299A priority patent/KR101522835B1/en
Priority to KR1020107021616A priority patent/KR101295723B1/en
Publication of WO2009108568A2 publication Critical patent/WO2009108568A2/en
Publication of WO2009108568A3 publication Critical patent/WO2009108568A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means

Abstract

A flow equalizer plate is provided for use in a substrate process chamber. The flow equalizer plate has an annular shape with a flow obstructing inner region, and a perforated outer region that permits the passage of a processing gas, but retains specific elements in the processing gas, such as active radicals or ions. The inner and outer regions have varying radial widths so as to balance a flow of processing gas over a surface of a substrate. In certain embodiments, the flow equalizer plate may be utilized to correct chamber flow asymmetries due to a lateral offset of an exhaust port relative to a center line of a substrate support between the process volume and the exhaust port.
PCT/US2009/034533 2008-02-28 2009-02-19 Gas flow equalizer plate suitable for use in a substrate process chamber WO2009108568A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN2009801070210A CN101960568B (en) 2008-02-28 2009-02-19 Gas flow equalizer plate suitable for use in a substrate process chamber
KR1020137001299A KR101522835B1 (en) 2008-02-28 2009-02-19 Gas flow equalizer plate suitable for use in a substrate process chamber
KR1020107021616A KR101295723B1 (en) 2008-02-28 2009-02-19 Gas flow equalizer plate suitable for use in a substrate process chamber

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/038,887 2008-02-28
US12/038,887 US8075728B2 (en) 2008-02-28 2008-02-28 Gas flow equalizer plate suitable for use in a substrate process chamber

Publications (2)

Publication Number Publication Date
WO2009108568A2 WO2009108568A2 (en) 2009-09-03
WO2009108568A3 true WO2009108568A3 (en) 2009-11-05

Family

ID=41012267

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2009/034533 WO2009108568A2 (en) 2008-02-28 2009-02-19 Gas flow equalizer plate suitable for use in a substrate process chamber

Country Status (5)

Country Link
US (1) US8075728B2 (en)
KR (2) KR101522835B1 (en)
CN (1) CN101960568B (en)
TW (1) TWI382488B (en)
WO (1) WO2009108568A2 (en)

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US20170207078A1 (en) * 2016-01-15 2017-07-20 Taiwan Semiconductor Manufacturing Co., Ltd. Atomic layer deposition apparatus and semiconductor process
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US10297458B2 (en) 2017-08-07 2019-05-21 Applied Materials, Inc. Process window widening using coated parts in plasma etch processes
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US10964512B2 (en) 2018-02-15 2021-03-30 Applied Materials, Inc. Semiconductor processing chamber multistage mixing apparatus and methods
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US11417534B2 (en) 2018-09-21 2022-08-16 Applied Materials, Inc. Selective material removal
US11682560B2 (en) 2018-10-11 2023-06-20 Applied Materials, Inc. Systems and methods for hafnium-containing film removal
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US11437242B2 (en) 2018-11-27 2022-09-06 Applied Materials, Inc. Selective removal of silicon-containing materials
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Also Published As

Publication number Publication date
KR20130021448A (en) 2013-03-05
WO2009108568A2 (en) 2009-09-03
TW201001591A (en) 2010-01-01
US8075728B2 (en) 2011-12-13
KR101522835B1 (en) 2015-05-27
US20090218043A1 (en) 2009-09-03
TWI382488B (en) 2013-01-11
KR20100128312A (en) 2010-12-07
CN101960568A (en) 2011-01-26
CN101960568B (en) 2012-12-12
KR101295723B1 (en) 2013-08-16

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