WO2009129105A3 - Methods and systems for determining a defect criticality index for defects on wafers - Google Patents

Methods and systems for determining a defect criticality index for defects on wafers Download PDF

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Publication number
WO2009129105A3
WO2009129105A3 PCT/US2009/039936 US2009039936W WO2009129105A3 WO 2009129105 A3 WO2009129105 A3 WO 2009129105A3 US 2009039936 W US2009039936 W US 2009039936W WO 2009129105 A3 WO2009129105 A3 WO 2009129105A3
Authority
WO
WIPO (PCT)
Prior art keywords
defect
determining
wafers
defects
systems
Prior art date
Application number
PCT/US2009/039936
Other languages
French (fr)
Other versions
WO2009129105A2 (en
Inventor
Chien-Huei Chen (Adam)
Yan Xiong
Jianxin Zhang
Ellis Chang
Tsung-Pao Fang
Original Assignee
Kla-Encor Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kla-Encor Corporation filed Critical Kla-Encor Corporation
Publication of WO2009129105A2 publication Critical patent/WO2009129105A2/en
Publication of WO2009129105A3 publication Critical patent/WO2009129105A3/en

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/317—Testing of digital circuits
    • G01R31/3181—Functional testing
    • G01R31/3185—Reconfiguring for testing, e.g. LSSD, partitioning
    • G01R31/318505—Test of Modular systems, e.g. Wafers, MCM's
    • G01R31/318511—Wafer Test
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/0002—Inspection of images, e.g. flaw detection
    • G06T7/0004—Industrial image inspection
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/30—Subject of image; Context of image processing
    • G06T2207/30108—Industrial image inspection
    • G06T2207/30148—Semiconductor; IC; Wafer

Abstract

Various methods and systems for determining a defect criticality index (DCI) for defects on wafers are provided. One computer-implemented method includes determining critical area information for a portion of a design for a wafer surrounding a defect detected on the wafer by an inspection system based on a location of the defect reported by the inspection system and a size of the defect reported by the inspection system. The method also includes determining a DCI for the defect based on the critical area information, a location of the defect with respect to the critical area information, and the reported size of the defect.
PCT/US2009/039936 2008-04-14 2009-04-08 Methods and systems for determining a defect criticality index for defects on wafers WO2009129105A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/102,343 2008-04-14
US12/102,343 US8139844B2 (en) 2008-04-14 2008-04-14 Methods and systems for determining a defect criticality index for defects on wafers

Publications (2)

Publication Number Publication Date
WO2009129105A2 WO2009129105A2 (en) 2009-10-22
WO2009129105A3 true WO2009129105A3 (en) 2010-01-21

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2009/039936 WO2009129105A2 (en) 2008-04-14 2009-04-08 Methods and systems for determining a defect criticality index for defects on wafers

Country Status (2)

Country Link
US (1) US8139844B2 (en)
WO (1) WO2009129105A2 (en)

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