WO2009131889A2 - Method and apparatus for excimer curing - Google Patents
Method and apparatus for excimer curing Download PDFInfo
- Publication number
- WO2009131889A2 WO2009131889A2 PCT/US2009/040809 US2009040809W WO2009131889A2 WO 2009131889 A2 WO2009131889 A2 WO 2009131889A2 US 2009040809 W US2009040809 W US 2009040809W WO 2009131889 A2 WO2009131889 A2 WO 2009131889A2
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- WIPO (PCT)
- Prior art keywords
- wall
- chamber
- excimer
- tubular body
- excimer lamp
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 49
- 239000011261 inert gas Substances 0.000 claims abstract description 25
- 230000005855 radiation Effects 0.000 claims abstract description 11
- 239000000758 substrate Substances 0.000 claims description 39
- 239000003989 dielectric material Substances 0.000 claims description 31
- 238000012545 processing Methods 0.000 claims description 17
- 239000007789 gas Substances 0.000 claims description 16
- 238000005192 partition Methods 0.000 claims description 10
- 238000001723 curing Methods 0.000 description 23
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 17
- 238000005229 chemical vapour deposition Methods 0.000 description 11
- 239000010453 quartz Substances 0.000 description 8
- 239000000463 material Substances 0.000 description 7
- 229910052814 silicon oxide Inorganic materials 0.000 description 7
- 238000003848 UV Light-Curing Methods 0.000 description 6
- 238000001816 cooling Methods 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 238000013036 cure process Methods 0.000 description 3
- 229910052734 helium Inorganic materials 0.000 description 3
- 238000005286 illumination Methods 0.000 description 3
- 229910052743 krypton Inorganic materials 0.000 description 3
- 229910052754 neon Inorganic materials 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 229910052724 xenon Inorganic materials 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 2
- 239000006227 byproduct Substances 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 2
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 2
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 2
- 229910008051 Si-OH Inorganic materials 0.000 description 1
- 229910006358 Si—OH Inorganic materials 0.000 description 1
- HMDDXIMCDZRSNE-UHFFFAOYSA-N [C].[Si] Chemical compound [C].[Si] HMDDXIMCDZRSNE-UHFFFAOYSA-N 0.000 description 1
- UMVBXBACMIOFDO-UHFFFAOYSA-N [N].[Si] Chemical compound [N].[Si] UMVBXBACMIOFDO-UHFFFAOYSA-N 0.000 description 1
- OBNDGIHQAIXEAO-UHFFFAOYSA-N [O].[Si] Chemical compound [O].[Si] OBNDGIHQAIXEAO-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 239000005350 fused silica glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000007726 management method Methods 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910001507 metal halide Inorganic materials 0.000 description 1
- 150000005309 metal halides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 150000001282 organosilanes Chemical class 0.000 description 1
- 150000003961 organosilicon compounds Chemical class 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- SBEQWOXEGHQIMW-UHFFFAOYSA-N silicon Chemical compound [Si].[Si] SBEQWOXEGHQIMW-UHFFFAOYSA-N 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 238000013519 translation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/2406—Generating plasma using dielectric barrier discharges, i.e. with a dielectric interposed between the electrodes
- H05H1/2431—Generating plasma using dielectric barrier discharges, i.e. with a dielectric interposed between the electrodes using cylindrical electrodes, e.g. rotary drums
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/02—Constructional details
- H01S3/03—Constructional details of gas laser discharge tubes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/02—Constructional details
- H01S3/03—Constructional details of gas laser discharge tubes
- H01S3/034—Optical devices within, or forming part of, the tube, e.g. windows, mirrors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/02—Constructional details
- H01S3/03—Constructional details of gas laser discharge tubes
- H01S3/038—Electrodes, e.g. special shape, configuration or composition
- H01S3/0385—Shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/22—Gases
- H01S3/223—Gases the active gas being polyatomic, i.e. containing two or more atoms
- H01S3/225—Gases the active gas being polyatomic, i.e. containing two or more atoms comprising an excimer or exciplex
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/2406—Generating plasma using dielectric barrier discharges, i.e. with a dielectric interposed between the electrodes
- H05H1/2443—Generating plasma using dielectric barrier discharges, i.e. with a dielectric interposed between the electrodes the plasma fluid flowing through a dielectric tube
- H05H1/245—Generating plasma using dielectric barrier discharges, i.e. with a dielectric interposed between the electrodes the plasma fluid flowing through a dielectric tube the plasma being activated using internal electrodes
Definitions
- the present invention relates generally to methods and apparatus of semiconductor manufacturing process. More particularly, the invention provides methods and apparatus for excimer curing.
- silicon oxide (SiO x ), silicon carbide (SiC) and carbon doped silicon oxide (SiOC x ) films find widespread use in the fabrication of semiconductor devices.
- One approach for forming such silicon-containing films on a semiconductor substrate is through the process of chemical vapor deposition (CVD) within a chamber.
- CVD chemical vapor deposition
- chemical reaction between a silicon supplying source and an oxygen supplying source may result in deposition of solid phase silicon oxide on top of a semiconductor substrate positioned within a CVD chamber.
- silicon carbide and carbon-doped silicon oxide films may be formed from a CVD reaction that includes an organosilane source including at least one Si-C bond.
- UV radiation to aid in the post treatment of CVD silicon oxide, silicon carbide and carbon-doped silicon oxide films.
- the use of UV radiation for curing and densifying CVD firms can reduce the overall thermal budget of an individual wafer and speed up the fabrication process.
- a number of various UV curing systems have been developed which can be used to cure films deposited on substrates.
- an UV curing system has either mercury vapor lamps or metal halide doped mercury lamps powered by microwave generator.
- UV lamps generate light across a broad band of wavelengths from 170 nm to 600 ran.
- UV lamps usually have a short lifetime and provide low output of radiation at wavelength less than about 400 nm.
- the power output of UV lamps declines with the increasing use of the UV lamps.
- Embodiments of the present invention pertain to apparatuses that provide benefits over previously known processes and apparatuses by employing an excimer lamp to excite an inert gas to illuminate an excimer light having a narrow range of bandwidth, such as 152nm, 172 nm, 193 nm, 222 nm, 248 nm or 303 nm, for curing dielectric materials.
- the excimer light can have a desired power to cure dielectric materials even if its wavelength is under about 250 nm.
- One embodiment of the invention provides an apparatus for generating excimer radiation.
- the apparatus includes a housing having a housing wall.
- An electrode is configured within the housing.
- a tubular body is around the electrode.
- the tubular body includes an outer wall and an inner wall.
- At least one inert gas is between the outer wall and the inner wall, wherein the housing wall and the electrode are configured to excite the inert gas to illuminate an excimer light for curing.
- the apparatus includes a chamber defining a substrate processing region.
- a substrate support is configured within and at a bottom region of the chamber.
- At least one excimer lamp is separated from the substrate support and configured to generate and transmit radiation to a substrate positioned over the substrate support.
- Each of the at least one excimer lamp includes an electrode.
- a tubular body is configured around the electrode.
- the tubular body includes an outer wall and an inner wall.
- At least one inert gas is between the outer wall and the inner wall.
- a reflector is adjacent to the outer wall of the tubular body, wherein the reflector and the electrode are configured to excite the inert gas to illuminate an excimer light for curing.
- the other embodiment provides a method for excimer curing a dielectric material over a substrate.
- the substrate is disposed within a chamber having a chamber wall and an excimer lamp disposed within the chamber.
- the method includes applying a voltage drop between the chamber wall and the excimer lamp to excite an inert gas within the excimer lamp to illuminate an excimer light to cure the dielectric material.
- FIG. 1 is a simplified plan view of an exemplary semiconductor processing system
- FIG. 2 is a simplified perspective view of one of exemplary tandem process chambers
- FIG. 3 shows a partial section view of an exemplary tandem process chamber
- FIG. 4 A is a schematic cross-sectional view of an example excimer lamp configured at a sidewall of a chamber according to an embodiment of the present invention
- FIG. 4B is a schematic cross-sectional view of the example excimer lamp of FIG. 4A along section line 4B-4B;
- FIG. 5 A is a schematic cross-sectional view of an example excimer lamp configured at a sidewall of a chamber according to an embodiment of the present invention
- FIG. 5B is a schematic cross-sectional view of the example excimer lamp of FIG. 5A along section line 5B-5B;
- FIG. 6A is a schematic cross-sectional view of an example excimer lamp configured at a sidewall of a chamber according to an embodiment of the present invention
- FIG. 6B is a schematic cross-sectional view of the example excimer lamp of FIG. 6A along section line 6B-6B;
- FIG. 7A is a schematic cross-sectional view of an example excimer lamp configured at a sidewall of a chamber according to an embodiment of the present invention
- FIG. 7B is a schematic cross-sectional view of the example excimer lamp of FIG. 7A along section line 7B-7B; and [0026] FIGS. 8-10 are schematic drawings showing exemplary configurations of excimer lamps within a chamber.
- the present invention relates to apparatus for curing dielectric materials such as low-k dielectric material, spin-on-glass (SOG), or other dielectric materials deposited over substrate, such as silicon wafers, liquid crystal display substrates, solar panel substrates, and others.
- the apparatus excites an inert gas to illuminate an excimer light having a narrow range of bandwidth, such as 152nm, 172 nm, 193 nm, 222 nm, 248 nm or 303 nm, for curing dielectric materials.
- the excimer light can have a desired power to cure dielectric materials even if its wavelength is under about 250 nm.
- the apparatus includes a chamber having a chamber wall. An electrode is configured within the chamber. A tubular body is around the electrode. The tubular body includes an outer wall and an inner wall. At least one inert gas is between the outer wall and the inner wall, wherein the chamber wall and the electrode are configured to excite the inert gas to illuminate an excimer light for curing.
- FIG. 1 is a simplified plan view of a semiconductor processing system 100 in which embodiments of the invention may be incorporated.
- System 100 illustrates one embodiment of a ProducerTM processing system, commercially available from Applied Materials, Inc., of Santa Clara, Calif.
- Processing system 100 is a self-contained system having the necessary processing utilities supported on mainframe structure 101.
- Processing system 100 generally includes front end staging area 102 where substrate cassettes 109 are supported and substrates are loaded into and unloaded from loadlock chamber 112, transfer chamber 111 housing substrate handler 113, a series of tandem process chambers 106 mounted on transfer chamber 111 and back end 138 which houses the support utilities needed for operation of system 100, such as gas panel 103 and power distribution panel 105.
- Each of tandem process chambers 106 includes two processing regions for processing the substrates.
- the two processing regions share a common supply of gases, common pressure control and common process gas exhaust/pumping system. Modular design of the system enables rapid conversion from any one configuration to any other.
- the arrangement and combination of chambers may be altered for purposes of performing specific process steps.
- Any of the tandem process chambers 106 can include a lid according to aspects of the invention as described below that includes one or more excimer lamps for use in a cure process of a low K material on the substrate and/or in a chamber clean process.
- all three of the tandem process chambers 106 have excimer lamps and are configured as excimer curing chambers to run in parallel for maximum throughput.
- system 100 can be adapted with one or more of the tandem process chambers having supporting chamber hardware as is known to accommodate various other known processes such as chemical vapor deposition (CVD), physical vapor deposition (PVD), etch, and the like.
- system 100 can be configured with one of tandem process chambers 106 and a CVD chamber for depositing materials, such as a low dielectric constant (K) film, on the substrates.
- CVD chemical vapor deposition
- PVD physical vapor deposition
- etch etch
- system 100 can be configured with one of tandem process chambers 106 and a CVD chamber for depositing materials, such as a low dielectric constant (K) film, on the substrates.
- K low dielectric constant
- FIG. 2 is a simplified perspective view of one of tandem process chambers 106 shown in FIG. 2 that is configured for excimer curing.
- Tandem process chamber 106 includes body 200 and lid 202 that can be hinged to body 200. Coupled with lid 202 are two housings 204 that each includes inlets 206 along with outlets 208 for passing cooling air through an interior of housings 204.
- the cooling air can be at room temperature or approximately twenty-two degrees Celsius.
- a central pressurized air source (not shown) provides a sufficient flow rate of air to inlets 206 to insure proper operation of any excimer lamp bulbs and/or associated power sources for the bulbs.
- Outlets 208 receive exhaust air from the housings 204.
- Each housing 204 includes upper housing 210 in which an excimer lamp (not shown) is placed and lower housing 214 in which a secondary reflector (not shown) is placed.
- Some embodiments of the invention further include disc 212 having a plurality of teeth 212a that grip a corresponding belt (not shown) that couples disc 212 to spindle 216 which in turn is operatively coupled with a motor (not shown).
- the combination of discs 212, belts, spindle 216 and motor allow upper housings 210 (and the excimer lamps mounted therein) to be rotated relative to a substrate positioned on substrate support below lid 202.
- FIG. 3 shows a partial section view of the tandem process chamber 106 with lid 202, housings 204 and power sources 303.
- Each of housings 204 covers a respective one of two excimer lamps 302 disposed respectively above two process regions 300 defined within body 200.
- Each of process regions 300 includes heating pedestal 306 for supporting substrate 308 within process regions 300.
- Pedestals 306 can be made from ceramic or metal such as aluminum.
- pedestals 306 couple to stems 310 that extend through a bottom of body 200 and are operated by drive systems 312 to move pedestals 306 in processing regions 300 toward and away from excimer lamps 302.
- Drive systems 312 can also rotate and/or translate pedestals 306 during curing to further enhance uniformity of substrate illumination.
- Adjustable positioning of pedestals 306 enables control of volatile cure by-product and purge and clean gas flow patterns and residence times in addition to potential fine tuning of incident excimer irradiance levels on substrate 308 depending on the nature of the light delivery system design considerations such as focal length.
- embodiments of the invention contemplate any excimer source such as pulsed helium, neon, argon, krypton or xenon flash lamps that can generate radiation with wavelength specifically at, for example, 152nm, 172 nm, 193 nm, 222 nm, 248 ran or 303 nm.
- Excimer lamps 302 are filled with one or more gases such as helium, neon, argon, krypton or xenon for excitation by power sources 303.
- power sources 214 are radio frequency (RF) generators.
- the RF generators can generate frequency between about 50 kHz and about 180 MHz.
- each of housings 204 includes aperture 305 adjacent to power sources 303 to receive an RF power from power sources 303.
- Excimer lamps 302 can emit an excimer light having a narrow range of bandwidth, such as about 152nm, 172 nm, 193 nm, 222 nm, 248 nm or 303 nm.
- the gases selected for use within excimer lamps 302 can determine the wavelengths emitted.
- excimer lamps 302 can emit light having a narrow range of bandwidth corresponding to bonding energies of silicon-silicon (Si-Si), silicon-oxygen (Si-O), silicon-nitrogen (Si-N) and/or silicon-carbon (Si-C) so as to cure dielectric material, such as oxide, nitride, oxynitride, carbide-containing dielectric material, or other dielectric material.
- Excimer lamps 302 can provide desired power output at wavelengths lower than about 400 nm for curing dielectric materials.
- the distance between excimer lamps 302 and substrate 308 can be between about 1 mm and about 200 mm. In other embodiments, the distance can be between about 1 mm and about 60 mm.
- each of housings 204 includes an interior parabolic surface defined by cast quartz lining 304 coated with a dichroic film.
- Quartz linings 304 reflect light emitted from excimer lamps 302 and are shaped to suit both the cure processes as well as the chamber clean processes based on the pattern of excimer light directed by quartz linings 304 into process regions 300.
- quartz linings 304 adjust to better suit each process or task by moving and changing the shape of the interior parabolic surface.
- quartz linings 304 can desirably transmit light emitted by excimer lamps 302 due to the dichroic film.
- the dichroic film usually constitutes a periodic multilayer film composed of diverse dielectric materials having alternating high and low refractive index. Since the coating is non-metallic, microwave radiation from power sources 303 that is downwardly incident on the backside of cast quartz linings 304 does not significantly interact with, or get absorbed by, the modulated layers and is readily transmitted for ionizing the gas in excimer lamps 302.
- rotating or otherwise periodically moving quartz linings 304 during curing and/or cleaning enhances the uniformity of illumination in the substrate plane.
- entire housings 204 rotate or translate periodically over substrate 308 while quartz linings 304 are stationary with respect to excimer lamps 302.
- rotation or periodic translation of substrate 308 via pedestals 306 provides the relative motion between substrate 308 and excimer lamps 302 to enhance illumination and curing uniformity.
- FIG. 4 A is a schematic cross-sectional view of an exemplary excimer lamp configured at a sidewall of a housing according to an embodiment of the present invention.
- FIG. 4B is a schematic cross-sectional view of the example excimer lamp of FIG. 4 A along section line 4B-4B.
- excimer lamp 302 includes electrode 410, reflector 420, and tubular body 400.
- Tubular body 400 is around electrode 410.
- Tubular body 400 includes outer wall 402 and inner wall 404.
- At least one inert gas such as He, Ne, Ar, Kr and Xe is filled and sealed between inner wall 404 and outer wall 402.
- Reflector 420 is configured adjacent to outer wall 402 of tubular body 400.
- Reflector 420 can be substantially grounded, and electrode 410 can be coupled with RF power source 303 (shown in FIG. 3) to excite inert gas 406 to emit an excimer light having a narrow range of bandwidth for curing.
- Tubular body 400 is configured through sidewall 430 of the housing.
- Brazed vacuum flanges 450 attached to the tubular body 400 are configured between sidewall 430 and lamp clamps 440.
- O-ring 460 is configured within a groove of sidewall 430 to desirably seal the housing and/or maintain the pressure within the housing. It is noted the shape of tubular body 400 is not limited to that as shown in FIG. 4A. Tubular body 400 can have any shape that can desirably accommodate electrode 410.
- Excimer lamp 302 can excite the inert gas to illuminate excimer light by applying a high voltage to electrode 410 and substantially grounding reflector 420 and/or housing sidewall 430.
- the excimer light can cure dielectric materials, such as low-k dielectric materials, to desirably remove moistures and density the dielectric materials.
- wire 410a coupled with electrode 410 is configured within tubular body 400 and is free from being exposed within tandem process chamber 106. The configuration can desirably prevent generation of plasma within tandem process chamber 106 due to the high voltage applied to wire 410a and substantially grounded housing sidewall 430. Additionally, a pressure is provided in the space between electrode 410 and inner wall 404 of tubular body 400.
- the pressure is provided such that plasma is substantially free from being generated within the space when electrode 410 and reflector 420 and/or sidewall 430 are configured to generate the excimer light.
- the pressure can be, for example, about an atmosphere pressure, and different from the pressure within housing 204 (shown in FIG. 3).
- reflector 420 can be substantially semi-cylindrical around outer wall 402 of tubular body 400. Reflector 420 can desirably reflect excimer light emitted from excimer lamp 302. Reflector 420 can be substantially grounded. One of ordinary skill in the art can modify reflector 420 to cover outer wall 402 to generate a desired radiation for curing.
- FIG. 5 A is a schematic cross-sectional view of an exemplary excimer lamp configured at a sidewall of a housing according to an embodiment of the present invention.
- FIG. 5B is a schematic cross-sectional view of the exemplary excimer lamp of FIG. 5 A along section line 5B-5B.
- Partition walls 403 contact inner wall 404 and outer wall 402. Partition walls 403 separate area 405 adjacent to one end of tubular body 400 from other area 407 adjacent to the other end of tubular body 400.
- Inert gas 406 is filled and sealed within area 405. It is optional that gas such air or other gas can be filled and/or sealed in area 407.
- Partition walls 403 may be substantially adjacent to sidewall 430 of the housing.
- Partition walls 403 of excimer lamp 302a separate area 407 from area 405. Gas other than inert gas can be filled within area 407. During exciting inert gas 406 in area 405, no substantially excimer light is generated from the gas in area 407.
- O-ring 460 can be desirably free from being subjected to excimer light from area 407. The life span of O-ring 460 can be more desirably extended. O-rings 460 can desirably seal the housing.
- FIG. 6A is a schematic cross-sectional view of an example excimer lamp configured at a sidewall of a housing according to another embodiment of the present invention.
- FIG. 6B is a schematic cross-sectional view of the example excimer lamp of FIG. 6 A along section line 6B-6B.
- the other exemplary excimer lamp 302b is provided in FIG. 6A.
- Excimer lamp 302b has dielectric material area 407a such as glass and/or any solid dielectric material.
- the use of brazed vacuum flange 450 (shown in FIGS. 4A and 5A) is optional if sidewall 430 can desirably hold excimer lamp 302b.
- O-rings 460 are configured within grooves of the housing wall and between tubular body 400 and the housing wall. With dielectric material area 407a, no excimer light can be generated from solid dielectric material area 407a when excimer lamp 302b generates an excimer light. In addition, sidewall 430 can substantially block excimer light generated from inert gas 406 within area 405. O-rings 460 is not subjected any excimer light from solid dielectric material area 407a. Accordingly, O-rings 460 can be desirably prevented from being damaged during the excimer curing process. The life span of O-rings 460 can be more desirably extended and O-rings 460 can desirably seal the housing.
- FIG. 7A is a schematic cross-sectional view of an example excimer lamp configured at a sidewall of a housing according to still another embodiment of the present invention.
- FIG. 7B is a schematic cross-sectional view of the example excimer lamp of FIG. 7 A along section line 7B-7B.
- FIG. 7 A an exemplary excimer lamp 302c is provided.
- excimer lamp 302c has inner wall 404, which is separated from outer wall 402 at the region adjacent to end 415 of tubular body 400.
- electrode 410 and sidewall 430 can substantially excite the inert gas between inner wall 404 and outer wall 402.
- the gap between outer wall 402 and inner wall 404 at the region adjacent to end 415 can desirably prevent generating plasma by electrode 410 and sidewall 430 within the chamber.
- FIGS . 8- 10 are schematic drawings showing exemplary configurations of excimer lamps within a housing, hi FIG.
- excimer lamps 302 are substantially parallel configured within the housing. One end of each of excimer lamps 302 is configured through sidewall 430a and the other end of each of excimer lamps 302 is distant from sidewall 430b. hi embodiments, excimer lamps 302 may be configured adjacent to the center of the housing. The number of excimer lamps 302 shown in FIG. 8 is merely exemplary. The scope of the invention is not limited thereto. One or more than two excimer lamps 302 can be configured within the housing if the housing can accommodate the number of excimer lamps 302. hi embodiments, the number of excimer lamps 302 can be between about 2 and about 12. Excimer lamps 302 and 302a-302c described above in conjunction with FIGS. 4A, 5A, 6A, and 7A can be optionally used.
- both ends of each of excimer lamps 302 are configured through sidewalls 430a and 430b. Since each end of excimer lamps 302 is not configured within the chamber, ends of electrodes 410 within each of the excimer lamps 302 and sidewalls 430a and 430b do not generate plasma within chamber.
- the configuration of lamps 302 in FIG. 9 can desirably prevent ionizing gas in the chamber, hi embodiments, excimer lamps 302 and 302a-302c described above in conjunction with FIGS. 4A, 5 A, 6 A, and 7A can be optionally used.
- excimer lamps 302d-302i can be configured with a substantially same space between each other along housing wall 430.
- excimer lamps 302d-302i are configured such that one end of excimer lamp 302d substantially faces one end of excimer lamp 302g, one end of excimer lamp 302e substantially faces one end of excimer lamp 302h, and one end of excimer lamp 302f substantially faces one end of excimer lamp 302i.
- Excimer lamps 302d-302i can be any one of excimer lamps 302 and 302a-302c described above in conjunction with FIGS. 4A, 5 A, 6A, and 7 A.
Abstract
Description
Claims
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2009801141127A CN102017100B (en) | 2008-04-22 | 2009-04-16 | Method and apparatus for excimer curing |
JP2011506361A JP5319758B2 (en) | 2008-04-22 | 2009-04-16 | Equipment for excimer curing process |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/107,281 US8022377B2 (en) | 2008-04-22 | 2008-04-22 | Method and apparatus for excimer curing |
US12/107,281 | 2008-04-22 |
Publications (3)
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WO2009131889A2 true WO2009131889A2 (en) | 2009-10-29 |
WO2009131889A9 WO2009131889A9 (en) | 2009-12-30 |
WO2009131889A3 WO2009131889A3 (en) | 2010-02-18 |
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PCT/US2009/040809 WO2009131889A2 (en) | 2008-04-22 | 2009-04-16 | Method and apparatus for excimer curing |
Country Status (6)
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US (1) | US8022377B2 (en) |
JP (1) | JP5319758B2 (en) |
KR (1) | KR20110005721A (en) |
CN (1) | CN102017100B (en) |
TW (1) | TW201009947A (en) |
WO (1) | WO2009131889A2 (en) |
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Also Published As
Publication number | Publication date |
---|---|
US8022377B2 (en) | 2011-09-20 |
CN102017100A (en) | 2011-04-13 |
CN102017100B (en) | 2012-11-28 |
US20090261276A1 (en) | 2009-10-22 |
KR20110005721A (en) | 2011-01-18 |
TW201009947A (en) | 2010-03-01 |
WO2009131889A9 (en) | 2009-12-30 |
WO2009131889A3 (en) | 2010-02-18 |
JP2011518444A (en) | 2011-06-23 |
JP5319758B2 (en) | 2013-10-16 |
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