CN103258572B
(en)
|
2006-05-12 |
2016-12-07 |
苹果公司 |
Distortion estimation in storage device and elimination
|
US8239735B2
(en)
|
2006-05-12 |
2012-08-07 |
Apple Inc. |
Memory Device with adaptive capacity
|
US8156403B2
(en)
|
2006-05-12 |
2012-04-10 |
Anobit Technologies Ltd. |
Combined distortion estimation and error correction coding for memory devices
|
WO2008026203A2
(en)
|
2006-08-27 |
2008-03-06 |
Anobit Technologies |
Estimation of non-linear distortion in memory devices
|
CN101601094B
(en)
*
|
2006-10-30 |
2013-03-27 |
苹果公司 |
Reading memory cells using multiple thresholds
|
US7975192B2
(en)
|
2006-10-30 |
2011-07-05 |
Anobit Technologies Ltd. |
Reading memory cells using multiple thresholds
|
US7924648B2
(en)
*
|
2006-11-28 |
2011-04-12 |
Anobit Technologies Ltd. |
Memory power and performance management
|
US8151163B2
(en)
|
2006-12-03 |
2012-04-03 |
Anobit Technologies Ltd. |
Automatic defect management in memory devices
|
US7900102B2
(en)
|
2006-12-17 |
2011-03-01 |
Anobit Technologies Ltd. |
High-speed programming of memory devices
|
US8151166B2
(en)
|
2007-01-24 |
2012-04-03 |
Anobit Technologies Ltd. |
Reduction of back pattern dependency effects in memory devices
|
US7751240B2
(en)
|
2007-01-24 |
2010-07-06 |
Anobit Technologies Ltd. |
Memory device with negative thresholds
|
CN101715595A
(en)
|
2007-03-12 |
2010-05-26 |
爱诺彼得技术有限责任公司 |
Adaptive estimation of memory cell read thresholds
|
US8001320B2
(en)
|
2007-04-22 |
2011-08-16 |
Anobit Technologies Ltd. |
Command interface for memory devices
|
US8234545B2
(en)
|
2007-05-12 |
2012-07-31 |
Apple Inc. |
Data storage with incremental redundancy
|
WO2008139441A2
(en)
|
2007-05-12 |
2008-11-20 |
Anobit Technologies Ltd. |
Memory device with internal signal processing unit
|
US7925936B1
(en)
|
2007-07-13 |
2011-04-12 |
Anobit Technologies Ltd. |
Memory device with non-uniform programming levels
|
US8259497B2
(en)
|
2007-08-06 |
2012-09-04 |
Apple Inc. |
Programming schemes for multi-level analog memory cells
|
US8174905B2
(en)
|
2007-09-19 |
2012-05-08 |
Anobit Technologies Ltd. |
Programming orders for reducing distortion in arrays of multi-level analog memory cells
|
US7773413B2
(en)
*
|
2007-10-08 |
2010-08-10 |
Anobit Technologies Ltd. |
Reliable data storage in analog memory cells in the presence of temperature variations
|
US8527819B2
(en)
|
2007-10-19 |
2013-09-03 |
Apple Inc. |
Data storage in analog memory cell arrays having erase failures
|
US8000141B1
(en)
|
2007-10-19 |
2011-08-16 |
Anobit Technologies Ltd. |
Compensation for voltage drifts in analog memory cells
|
US8068360B2
(en)
|
2007-10-19 |
2011-11-29 |
Anobit Technologies Ltd. |
Reading analog memory cells using built-in multi-threshold commands
|
US8270246B2
(en)
|
2007-11-13 |
2012-09-18 |
Apple Inc. |
Optimized selection of memory chips in multi-chips memory devices
|
US8225181B2
(en)
|
2007-11-30 |
2012-07-17 |
Apple Inc. |
Efficient re-read operations from memory devices
|
US7975105B1
(en)
*
|
2007-12-03 |
2011-07-05 |
Yingju Sun |
Solid state storage devices with changeable capacity
|
US8209588B2
(en)
|
2007-12-12 |
2012-06-26 |
Anobit Technologies Ltd. |
Efficient interference cancellation in analog memory cell arrays
|
US8085586B2
(en)
|
2007-12-27 |
2011-12-27 |
Anobit Technologies Ltd. |
Wear level estimation in analog memory cells
|
US8156398B2
(en)
|
2008-02-05 |
2012-04-10 |
Anobit Technologies Ltd. |
Parameter estimation based on error correction code parity check equations
|
US7924587B2
(en)
|
2008-02-21 |
2011-04-12 |
Anobit Technologies Ltd. |
Programming of analog memory cells using a single programming pulse per state transition
|
US7864573B2
(en)
*
|
2008-02-24 |
2011-01-04 |
Anobit Technologies Ltd. |
Programming analog memory cells for reduced variance after retention
|
US8230300B2
(en)
|
2008-03-07 |
2012-07-24 |
Apple Inc. |
Efficient readout from analog memory cells using data compression
|
US8400858B2
(en)
|
2008-03-18 |
2013-03-19 |
Apple Inc. |
Memory device with reduced sense time readout
|
US8059457B2
(en)
|
2008-03-18 |
2011-11-15 |
Anobit Technologies Ltd. |
Memory device with multiple-accuracy read commands
|
US9032113B2
(en)
|
2008-03-27 |
2015-05-12 |
Apple Inc. |
Clock control for DMA busses
|
US8843691B2
(en)
*
|
2008-06-25 |
2014-09-23 |
Stec, Inc. |
Prioritized erasure of data blocks in a flash storage device
|
US7924613B1
(en)
|
2008-08-05 |
2011-04-12 |
Anobit Technologies Ltd. |
Data storage in analog memory cells with protection against programming interruption
|
US8498151B1
(en)
|
2008-08-05 |
2013-07-30 |
Apple Inc. |
Data storage in analog memory cells using modified pass voltages
|
US8949684B1
(en)
|
2008-09-02 |
2015-02-03 |
Apple Inc. |
Segmented data storage
|
US8169825B1
(en)
|
2008-09-02 |
2012-05-01 |
Anobit Technologies Ltd. |
Reliable data storage in analog memory cells subjected to long retention periods
|
US8000135B1
(en)
|
2008-09-14 |
2011-08-16 |
Anobit Technologies Ltd. |
Estimation of memory cell read thresholds by sampling inside programming level distribution intervals
|
US8482978B1
(en)
|
2008-09-14 |
2013-07-09 |
Apple Inc. |
Estimation of memory cell read thresholds by sampling inside programming level distribution intervals
|
US8510542B2
(en)
*
|
2008-10-01 |
2013-08-13 |
Oracle International Corporation |
Flash memory device having memory partitions and including an embedded general purpose operating system for booting a computing device
|
US8838876B2
(en)
|
2008-10-13 |
2014-09-16 |
Micron Technology, Inc. |
Translation layer in a solid state storage device
|
US8239734B1
(en)
|
2008-10-15 |
2012-08-07 |
Apple Inc. |
Efficient data storage in storage device arrays
|
US8261159B1
(en)
|
2008-10-30 |
2012-09-04 |
Apple, Inc. |
Data scrambling schemes for memory devices
|
US8208304B2
(en)
|
2008-11-16 |
2012-06-26 |
Anobit Technologies Ltd. |
Storage at M bits/cell density in N bits/cell analog memory cell devices, M>N
|
US8248831B2
(en)
|
2008-12-31 |
2012-08-21 |
Apple Inc. |
Rejuvenation of analog memory cells
|
US8174857B1
(en)
|
2008-12-31 |
2012-05-08 |
Anobit Technologies Ltd. |
Efficient readout schemes for analog memory cell devices using multiple read threshold sets
|
US8924661B1
(en)
|
2009-01-18 |
2014-12-30 |
Apple Inc. |
Memory system including a controller and processors associated with memory devices
|
US8228701B2
(en)
|
2009-03-01 |
2012-07-24 |
Apple Inc. |
Selective activation of programming schemes in analog memory cell arrays
|
FR2942893B1
(en)
*
|
2009-03-03 |
2016-07-01 |
Peugeot Citroen Automobiles Sa |
MOTOR CALCULATOR WITH PROLONGED ACTIVATION.
|
FR2943439B1
(en)
|
2009-03-18 |
2011-03-04 |
Peugeot Citroen Automobiles Sa |
METHOD FOR TAKING INTO ACCOUNT CONFIGURATION PARAMETERS BY THE SOFTWARE OF A COMPUTER ON BOARD OF A VEHICLE
|
US8259506B1
(en)
|
2009-03-25 |
2012-09-04 |
Apple Inc. |
Database of memory read thresholds
|
US8832354B2
(en)
|
2009-03-25 |
2014-09-09 |
Apple Inc. |
Use of host system resources by memory controller
|
US8238157B1
(en)
|
2009-04-12 |
2012-08-07 |
Apple Inc. |
Selective re-programming of analog memory cells
|
US8479080B1
(en)
|
2009-07-12 |
2013-07-02 |
Apple Inc. |
Adaptive over-provisioning in memory systems
|
KR101076088B1
(en)
*
|
2009-08-05 |
2011-10-21 |
홍익대학교 산학협력단 |
System and Method for Data-processing
|
US8566520B1
(en)
|
2009-10-05 |
2013-10-22 |
Marvell International Ltd. |
Storage space allocation for logical disk creation
|
US8326799B2
(en)
*
|
2009-10-09 |
2012-12-04 |
Seagate Technology Llc |
Data distribution in systems with multiple storage entities
|
US8495465B1
(en)
|
2009-10-15 |
2013-07-23 |
Apple Inc. |
Error correction coding over multiple memory pages
|
US8335897B2
(en)
*
|
2009-12-15 |
2012-12-18 |
Seagate Technology Llc |
Data storage management in heterogeneous memory systems
|
US8677054B1
(en)
|
2009-12-16 |
2014-03-18 |
Apple Inc. |
Memory management schemes for non-volatile memory devices
|
US8694814B1
(en)
|
2010-01-10 |
2014-04-08 |
Apple Inc. |
Reuse of host hibernation storage space by memory controller
|
US8572311B1
(en)
|
2010-01-11 |
2013-10-29 |
Apple Inc. |
Redundant data storage in multi-die memory systems
|
US8694853B1
(en)
|
2010-05-04 |
2014-04-08 |
Apple Inc. |
Read commands for reading interfering memory cells
|
US8572423B1
(en)
|
2010-06-22 |
2013-10-29 |
Apple Inc. |
Reducing peak current in memory systems
|
US8595591B1
(en)
|
2010-07-11 |
2013-11-26 |
Apple Inc. |
Interference-aware assignment of programming levels in analog memory cells
|
US9104580B1
(en)
|
2010-07-27 |
2015-08-11 |
Apple Inc. |
Cache memory for hybrid disk drives
|
US8645794B1
(en)
|
2010-07-31 |
2014-02-04 |
Apple Inc. |
Data storage in analog memory cells using a non-integer number of bits per cell
|
US8856475B1
(en)
|
2010-08-01 |
2014-10-07 |
Apple Inc. |
Efficient selection of memory blocks for compaction
|
US8694854B1
(en)
|
2010-08-17 |
2014-04-08 |
Apple Inc. |
Read threshold setting based on soft readout statistics
|
US9021181B1
(en)
|
2010-09-27 |
2015-04-28 |
Apple Inc. |
Memory management for unifying memory cell conditions by using maximum time intervals
|
US8857170B2
(en)
*
|
2010-12-30 |
2014-10-14 |
Electratherm, Inc. |
Gas pressure reduction generator
|
EP2984570A4
(en)
|
2013-04-09 |
2017-11-08 |
Emc Corporation |
Multiprocessor system with independent direct access to bulk solid state memory resources
|
US10725684B2
(en)
*
|
2014-09-30 |
2020-07-28 |
EMC IP Holding Company LLC |
Method and apparatus for cost-based load balancing for port selection
|
US9846650B2
(en)
*
|
2015-03-09 |
2017-12-19 |
Samsung Electronics Co., Ltd. |
Tail response time reduction method for SSD
|
KR102480016B1
(en)
|
2015-08-18 |
2022-12-21 |
삼성전자 주식회사 |
Non-volatile memory system using a plurality of mapping units and Operating method thereof
|
US10510382B2
(en)
|
2016-11-11 |
2019-12-17 |
Qualcomm Incorporated |
Hardware automated link control of daisy-chained storage device
|
TW202301125A
(en)
|
2017-07-30 |
2023-01-01 |
埃拉德 希提 |
Memory chip with a memory-based distributed processor architecture
|
WO2020159548A1
(en)
*
|
2019-02-01 |
2020-08-06 |
Hewlett-Packard Development Company, L.P. |
Upgrades based on analytics from multiple sources
|
US11556416B2
(en)
|
2021-05-05 |
2023-01-17 |
Apple Inc. |
Controlling memory readout reliability and throughput by adjusting distance between read thresholds
|
US11914864B2
(en)
|
2021-07-01 |
2024-02-27 |
Samsung Electronics Co., Ltd. |
Storage device and method of data management on a storage device
|
US11847342B2
(en)
|
2021-07-28 |
2023-12-19 |
Apple Inc. |
Efficient transfer of hard data and confidence levels in reading a nonvolatile memory
|