WO2009149213A3 - Low temperature amorphous silicon sacrificial layer for controlled adhesion in mems devices - Google Patents

Low temperature amorphous silicon sacrificial layer for controlled adhesion in mems devices Download PDF

Info

Publication number
WO2009149213A3
WO2009149213A3 PCT/US2009/046176 US2009046176W WO2009149213A3 WO 2009149213 A3 WO2009149213 A3 WO 2009149213A3 US 2009046176 W US2009046176 W US 2009046176W WO 2009149213 A3 WO2009149213 A3 WO 2009149213A3
Authority
WO
WIPO (PCT)
Prior art keywords
amorphous silicon
sacrificial layer
silicon sacrificial
low temperature
mems devices
Prior art date
Application number
PCT/US2009/046176
Other languages
French (fr)
Other versions
WO2009149213A2 (en
Inventor
James Randolph Webster
Thanh Nghia Tu
Xiaoming Yan
Won Suk Chung
Original Assignee
Qualcomm Mems Technologies, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Qualcomm Mems Technologies, Inc. filed Critical Qualcomm Mems Technologies, Inc.
Priority to EP09759372A priority Critical patent/EP2297026A2/en
Priority to JP2011512625A priority patent/JP2011525861A/en
Priority to CN2009801205171A priority patent/CN102046516A/en
Publication of WO2009149213A2 publication Critical patent/WO2009149213A2/en
Publication of WO2009149213A3 publication Critical patent/WO2009149213A3/en

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • B81B3/0002—Arrangements for avoiding sticking of the flexible or moving parts
    • B81B3/0008—Structures for avoiding electrostatic attraction, e.g. avoiding charge accumulation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
    • G02B26/001—Optical devices or arrangements for the control of light using movable or deformable optical elements based on interference in an adjustable optical cavity
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/04—Optical MEMS
    • B81B2201/042—Micromirrors, not used as optical switches
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0102—Surface micromachining
    • B81C2201/0105—Sacrificial layer
    • B81C2201/0107—Sacrificial metal
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0102—Surface micromachining
    • B81C2201/0105—Sacrificial layer
    • B81C2201/0109—Sacrificial layers not provided for in B81C2201/0107 - B81C2201/0108
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/11—Treatments for avoiding stiction of elastic or moving parts of MEMS
    • B81C2201/115—Roughening a surface
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
    • Y10T428/24917—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.] including metal layer

Abstract

Methods of fabricating an electromechanical systems device that mitigate permanent adhesion, or stiction, of the moveable components of the device are provided. The methods provide an amorphous silicon sacrificial layer with improved and reproducible surface roughness. The amorphous silicon sacrificial layers further exhibit excellent adhesion to common materials used in electromechanical systems devices.
PCT/US2009/046176 2008-06-05 2009-06-03 Low temperature amorphous silicon sacrificial layer for controlled adhesion in mems devices WO2009149213A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
EP09759372A EP2297026A2 (en) 2008-06-05 2009-06-03 Low temperature amorphous silicon sacrificial layer for controlled adhesion in mems devices
JP2011512625A JP2011525861A (en) 2008-06-05 2009-06-03 Low temperature amorphous silicon sacrificial layer for controlled deposition in MEMS devices
CN2009801205171A CN102046516A (en) 2008-06-05 2009-06-03 Low temperature amorphous silicon sacrificial layer for controlled adhesion in MEMS devices

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/133,813 2008-06-05
US12/133,813 US7851239B2 (en) 2008-06-05 2008-06-05 Low temperature amorphous silicon sacrificial layer for controlled adhesion in MEMS devices

Publications (2)

Publication Number Publication Date
WO2009149213A2 WO2009149213A2 (en) 2009-12-10
WO2009149213A3 true WO2009149213A3 (en) 2010-08-19

Family

ID=41398852

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2009/046176 WO2009149213A2 (en) 2008-06-05 2009-06-03 Low temperature amorphous silicon sacrificial layer for controlled adhesion in mems devices

Country Status (6)

Country Link
US (2) US7851239B2 (en)
EP (1) EP2297026A2 (en)
JP (1) JP2011525861A (en)
KR (1) KR20110014709A (en)
CN (1) CN102046516A (en)
WO (1) WO2009149213A2 (en)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7851239B2 (en) 2008-06-05 2010-12-14 Qualcomm Mems Technologies, Inc. Low temperature amorphous silicon sacrificial layer for controlled adhesion in MEMS devices
CN101913550B (en) * 2010-08-11 2015-12-02 上海集成电路研发中心有限公司 The manufacture method of microbridge structure of micro-electromechanical system
US20120105385A1 (en) * 2010-11-02 2012-05-03 Qualcomm Mems Technologies, Inc. Electromechanical systems apparatuses and methods for providing rough surfaces
KR101250447B1 (en) 2011-12-12 2013-04-08 한국과학기술원 Method for making mems devices
US9511560B2 (en) * 2012-04-13 2016-12-06 Infineon Technologies Ag Processing a sacrificial material during manufacture of a microfabricated product
US20140009379A1 (en) * 2012-07-06 2014-01-09 Qualcomm Mems Technologies, Inc. Cavity liners for electromechanical systems devices
US9096419B2 (en) * 2012-10-01 2015-08-04 Qualcomm Mems Technologies, Inc. Electromechanical systems device with protrusions to provide additional stable states
DE102014213390A1 (en) * 2014-07-09 2016-01-28 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Device and method for producing a device with microstructures or nanostructures
KR102496037B1 (en) 2016-01-20 2023-02-06 삼성전자주식회사 method and apparatus for plasma etching
CN106829851A (en) * 2016-12-29 2017-06-13 上海集成电路研发中心有限公司 It is a kind of to improve the method that MEMS sacrifice layer etching is bonded
KR20210059562A (en) 2019-11-15 2021-05-25 안빛찬 a computer device with facial recognition
US11305988B2 (en) * 2020-09-01 2022-04-19 Aac Acoustic Technologies (Shenzhen) Co., Ltd. Method for preparing silicon wafer with rough surface and silicon wafer

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030214639A1 (en) * 2000-08-03 2003-11-20 Satyadev Patel Micromirrors with OFF-angle electrodes and stops
US20060067650A1 (en) * 2004-09-27 2006-03-30 Clarence Chui Method of making a reflective display device using thin film transistor production techniques
US20070041076A1 (en) * 2005-08-19 2007-02-22 Fan Zhong MEMS device having support structures configured to minimize stress-related deformation and methods for fabricating same
US20070249079A1 (en) * 2006-04-19 2007-10-25 Teruo Sasagawa Non-planar surface structures and process for microelectromechanical systems

Family Cites Families (224)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4170732A (en) * 1977-09-01 1979-10-09 Dresser Industries, Inc. Pulsed neutron porosity logging method and apparatus using dual detectors
US4190488A (en) 1978-08-21 1980-02-26 International Business Machines Corporation Etching method using noble gas halides
NL8001281A (en) 1980-03-04 1981-10-01 Philips Nv DISPLAY DEVICE.
NL8200354A (en) 1982-02-01 1983-09-01 Philips Nv PASSIVE DISPLAY.
US4500171A (en) 1982-06-02 1985-02-19 Texas Instruments Incorporated Process for plastic LCD fill hole sealing
US4498953A (en) 1983-07-27 1985-02-12 At&T Bell Laboratories Etching techniques
US4710732A (en) 1984-07-31 1987-12-01 Texas Instruments Incorporated Spatial light modulator and method
US4566935A (en) 1984-07-31 1986-01-28 Texas Instruments Incorporated Spatial light modulator and method
US5061049A (en) 1984-08-31 1991-10-29 Texas Instruments Incorporated Spatial light modulator and method
US5096279A (en) 1984-08-31 1992-03-17 Texas Instruments Incorporated Spatial light modulator and method
US4560435A (en) 1984-10-01 1985-12-24 International Business Machines Corporation Composite back-etch/lift-off stencil for proximity effect minimization
US5835255A (en) 1986-04-23 1998-11-10 Etalon, Inc. Visible spectrum modulator arrays
US4956619A (en) 1988-02-19 1990-09-11 Texas Instruments Incorporated Spatial light modulator
US4880493A (en) 1988-06-16 1989-11-14 The United States Of America As Represented By The United States Department Of Energy Electronic-carrier-controlled photochemical etching process in semiconductor device fabrication
US4900395A (en) 1989-04-07 1990-02-13 Fsi International, Inc. HF gas etching of wafers in an acid processor
US4954789A (en) 1989-09-28 1990-09-04 Texas Instruments Incorporated Spatial light modulator
US5124834A (en) 1989-11-16 1992-06-23 General Electric Company Transferrable, self-supporting pellicle for elastomer light valve displays and method for making the same
US5279990A (en) 1990-03-02 1994-01-18 Motorola, Inc. Method of making a small geometry contact using sidewall spacers
US5099353A (en) 1990-06-29 1992-03-24 Texas Instruments Incorporated Architecture and process for integrating DMD with control circuit substrates
US5083857A (en) 1990-06-29 1992-01-28 Texas Instruments Incorporated Multi-level deformable mirror device
US5216537A (en) 1990-06-29 1993-06-01 Texas Instruments Incorporated Architecture and process for integrating DMD with control circuit substrates
US5602671A (en) 1990-11-13 1997-02-11 Texas Instruments Incorporated Low surface energy passivation layer for micromechanical devices
US5331454A (en) 1990-11-13 1994-07-19 Texas Instruments Incorporated Low reset voltage process for DMD
US5358806A (en) 1991-03-19 1994-10-25 Hitachi, Ltd. Phase shift mask, method of correcting the same and apparatus for carrying out the method
CH680534A5 (en) 1991-09-16 1992-09-15 Landis & Gyr Betriebs Ag Fabry=perot sensor for optical parameter measurement - uses two opposing mirrors respectively attached to deflected measuring membrane and transparent plate
US5231532A (en) 1992-02-05 1993-07-27 Texas Instruments Incorporated Switchable resonant filter for optical radiation
US5190637A (en) 1992-04-24 1993-03-02 Wisconsin Alumni Research Foundation Formation of microstructures by multiple level deep X-ray lithography with sacrificial metal layers
US5311360A (en) 1992-04-28 1994-05-10 The Board Of Trustees Of The Leland Stanford, Junior University Method and apparatus for modulating a light beam
DE69332407T2 (en) 1992-06-17 2003-06-18 Harris Corp Manufacture of semiconductor devices on SOI substrates
US5345328A (en) 1992-08-12 1994-09-06 Sandia Corporation Tandem resonator reflectance modulator
US5293272A (en) 1992-08-24 1994-03-08 Physical Optics Corporation High finesse holographic fabry-perot etalon and method of fabricating
US6674562B1 (en) 1994-05-05 2004-01-06 Iridigm Display Corporation Interferometric modulation of radiation
US5324683A (en) 1993-06-02 1994-06-28 Motorola, Inc. Method of forming a semiconductor structure having an air region
US5583688A (en) 1993-12-21 1996-12-10 Texas Instruments Incorporated Multi-level digital micromirror device
US5665997A (en) 1994-03-31 1997-09-09 Texas Instruments Incorporated Grated landing area to eliminate sticking of micro-mechanical devices
US5690839A (en) 1994-05-04 1997-11-25 Daewoo Electronics Co., Ltd. Method for forming an array of thin film actuated mirrors
US7550794B2 (en) 2002-09-20 2009-06-23 Idc, Llc Micromechanical systems device comprising a displaceable electrode and a charge-trapping layer
US7123216B1 (en) 1994-05-05 2006-10-17 Idc, Llc Photonic MEMS and structures
US20010003487A1 (en) 1996-11-05 2001-06-14 Mark W. Miles Visible spectrum modulator arrays
US7460291B2 (en) 1994-05-05 2008-12-02 Idc, Llc Separable modulator
US6710908B2 (en) 1994-05-05 2004-03-23 Iridigm Display Corporation Controlling micro-electro-mechanical cavities
US7297471B1 (en) 2003-04-15 2007-11-20 Idc, Llc Method for manufacturing an array of interferometric modulators
US6040937A (en) 1994-05-05 2000-03-21 Etalon, Inc. Interferometric modulation
US5454906A (en) 1994-06-21 1995-10-03 Texas Instruments Inc. Method of providing sacrificial spacer for micro-mechanical devices
US5485304A (en) 1994-07-29 1996-01-16 Texas Instruments, Inc. Support posts for micro-mechanical devices
US5656554A (en) 1994-07-29 1997-08-12 International Business Machines Corporation Semiconductor chip reclamation technique involving multiple planarization processes
WO1996008031A1 (en) 1994-09-02 1996-03-14 Dabbaj Rad H Reflective light valve modulator
US6053617A (en) 1994-09-23 2000-04-25 Texas Instruments Incorporated Manufacture method for micromechanical devices
US5650881A (en) 1994-11-02 1997-07-22 Texas Instruments Incorporated Support post architecture for micromechanical devices
JPH08153700A (en) 1994-11-25 1996-06-11 Semiconductor Energy Lab Co Ltd Anisotropic etching of electrically conductive coating
US5726480A (en) 1995-01-27 1998-03-10 The Regents Of The University Of California Etchants for use in micromachining of CMOS Microaccelerometers and microelectromechanical devices and method of making the same
US5610438A (en) 1995-03-08 1997-03-11 Texas Instruments Incorporated Micro-mechanical device with non-evaporable getter
US6849471B2 (en) 2003-03-28 2005-02-01 Reflectivity, Inc. Barrier layers for microelectromechanical systems
US6046840A (en) 1995-06-19 2000-04-04 Reflectivity, Inc. Double substrate reflective spatial light modulator with self-limiting micro-mechanical elements
US6969635B2 (en) 2000-12-07 2005-11-29 Reflectivity, Inc. Methods for depositing, releasing and packaging micro-electromechanical devices on wafer substrates
US5578976A (en) 1995-06-22 1996-11-26 Rockwell International Corporation Micro electromechanical RF switch
JP3489273B2 (en) 1995-06-27 2004-01-19 株式会社デンソー Manufacturing method of semiconductor dynamic quantity sensor
US6324192B1 (en) 1995-09-29 2001-11-27 Coretek, Inc. Electrically tunable fabry-perot structure utilizing a deformable multi-layer mirror and method of making the same
US5825528A (en) 1995-12-26 1998-10-20 Lucent Technologies Inc. Phase-mismatched fabry-perot cavity micromechanical modulator
US5967163A (en) 1996-01-30 1999-10-19 Abbott Laboratories Actuator and method
US5751469A (en) 1996-02-01 1998-05-12 Lucent Technologies Inc. Method and apparatus for an improved micromechanical modulator
US6624944B1 (en) 1996-03-29 2003-09-23 Texas Instruments Incorporated Fluorinated coating for an optical element
DE19730715C1 (en) 1996-11-12 1998-11-26 Fraunhofer Ges Forschung Method of manufacturing a micromechanical relay
US5683649A (en) 1996-11-14 1997-11-04 Eastman Kodak Company Method for the fabrication of micro-electromechanical ceramic parts
EP1376684B1 (en) 1997-01-21 2008-11-26 Georgia Tech Research Corporation Fabrication of a semiconductor device with air gaps for ultra-low capacitance interconnections
US6031653A (en) 1997-08-28 2000-02-29 California Institute Of Technology Low-cost thin-metal-film interference filters
US5978127A (en) 1997-09-09 1999-11-02 Zilog, Inc. Light phase grating device
JP2001522072A (en) 1997-10-31 2001-11-13 テーウー エレクトロニクス カンパニー リミテッド Manufacturing method of thin film type optical path adjusting device
US6008123A (en) 1997-11-04 1999-12-28 Lucent Technologies Inc. Method for using a hardmask to form an opening in a semiconductor substrate
JPH11263012A (en) 1998-03-18 1999-09-28 Seiko Epson Corp Electrostatic actuator and production thereof
US6689211B1 (en) 1999-04-09 2004-02-10 Massachusetts Institute Of Technology Etch stop layer system
EP0951068A1 (en) 1998-04-17 1999-10-20 Interuniversitair Micro-Elektronica Centrum Vzw Method of fabrication of a microstructure having an inside cavity
US6046659A (en) 1998-05-15 2000-04-04 Hughes Electronics Corporation Design and fabrication of broadband surface-micromachined micro-electro-mechanical switches for microwave and millimeter-wave applications
KR100281182B1 (en) 1998-08-10 2001-04-02 윤종용 Method for forming self-aligned contacts in semiconductor devices
JP2000075223A (en) 1998-08-27 2000-03-14 Seiko Epson Corp Optical element
US6710539B2 (en) 1998-09-02 2004-03-23 Micron Technology, Inc. Field emission devices having structure for reduced emitter tip to gate spacing
DE19938072A1 (en) 1998-09-09 2000-03-16 Siemens Ag Self-aligned structure, especially for semiconductor, micro-optical or micromechanical devices, is produced using an existing substrate structure as mask for back face resist layer exposure
US6323834B1 (en) 1998-10-08 2001-11-27 International Business Machines Corporation Micromechanical displays and fabrication method
KR100301050B1 (en) 1998-12-14 2002-06-20 윤종용 Method of manufacturing capacitor of semiconductor device including contacts
US6215221B1 (en) 1998-12-29 2001-04-10 Honeywell International Inc. Electrostatic/pneumatic actuators for active surfaces
US6210988B1 (en) 1999-01-15 2001-04-03 The Regents Of The University Of California Polycrystalline silicon germanium films for forming micro-electromechanical systems
JP4787412B2 (en) 1999-03-30 2011-10-05 シチズンホールディングス株式会社 Method for forming thin film substrate and thin film substrate formed by the method
US6358854B1 (en) 1999-04-21 2002-03-19 Sandia Corporation Method to fabricate layered material compositions
US6342452B1 (en) 1999-05-20 2002-01-29 International Business Machines Corporation Method of fabricating a Si3N4/polycide structure using a dielectric sacrificial layer as a mask
JP2004500481A (en) * 1999-06-03 2004-01-08 ザ　ペン　ステイト　リサーチ　ファンデーション Void / pillar network structure
US6359673B1 (en) 1999-06-21 2002-03-19 Eastman Kodak Company Sheet having a layer with different light modulating materials
US6525310B2 (en) 1999-08-05 2003-02-25 Microvision, Inc. Frequency tunable resonant scanner
US6337027B1 (en) 1999-09-30 2002-01-08 Rockwell Science Center, Llc Microelectromechanical device manufacturing process
WO2003007049A1 (en) 1999-10-05 2003-01-23 Iridigm Display Corporation Photonic mems and structures
US7041224B2 (en) 1999-10-26 2006-05-09 Reflectivity, Inc. Method for vapor phase etching of silicon
US6960305B2 (en) 1999-10-26 2005-11-01 Reflectivity, Inc Methods for forming and releasing microelectromechanical structures
US6435619B1 (en) * 1999-12-23 2002-08-20 Geosteering Mining Services, Llc Method for sensing coal-rock interface
US6674090B1 (en) 1999-12-27 2004-01-06 Xerox Corporation Structure and method for planar lateral oxidation in active
US6407851B1 (en) 2000-08-01 2002-06-18 Mohammed N. Islam Micromechanical optical switch
DE10006035A1 (en) 2000-02-10 2001-08-16 Bosch Gmbh Robert Micro-mechanical component production, used as sensor element or actuator element, comprises providing functional element and/or functional layer with protective layer
US7008812B1 (en) 2000-05-30 2006-03-07 Ic Mechanics, Inc. Manufacture of MEMS structures in sealed cavity using dry-release MEMS device encapsulation
US6465320B1 (en) 2000-06-16 2002-10-15 Motorola, Inc. Electronic component and method of manufacturing
CA2352729A1 (en) 2000-07-13 2002-01-13 Creoscitex Corporation Ltd. Blazed micro-mechanical light modulator and array thereof
WO2002012116A2 (en) 2000-08-03 2002-02-14 Analog Devices, Inc. Bonded wafer optical mems process
TW471063B (en) 2000-08-11 2002-01-01 Winbond Electronics Corp Method to form opening in insulator layer using ion implantation
US6635919B1 (en) 2000-08-17 2003-10-21 Texas Instruments Incorporated High Q-large tuning range micro-electro mechanical system (MEMS) varactor for broadband applications
MY128644A (en) 2000-08-31 2007-02-28 Georgia Tech Res Inst Fabrication of semiconductor devices with air gaps for ultra low capacitance interconnections and methods of making same
JP4304852B2 (en) 2000-09-04 2009-07-29 コニカミノルタホールディングス株式会社 Non-flat liquid crystal display element and method for manufacturing the same
US6787968B2 (en) 2000-09-25 2004-09-07 California Institute Of Technology Freestanding polymer MEMS structures with anti stiction
JP2002116569A (en) * 2000-10-10 2002-04-19 Canon Inc Electrophotographic photoreceptive member and electrophotographic device
GB2367788A (en) 2000-10-16 2002-04-17 Seiko Epson Corp Etching using an ink jet print head
DE10055421A1 (en) 2000-11-09 2002-05-29 Bosch Gmbh Robert Method for producing a micromechanical structure and micromechanical structure
US6406975B1 (en) 2000-11-27 2002-06-18 Chartered Semiconductor Manufacturing Inc. Method for fabricating an air gap shallow trench isolation (STI) structure
US6906847B2 (en) 2000-12-07 2005-06-14 Reflectivity, Inc Spatial light modulators with light blocking/absorbing areas
DE10063991B4 (en) 2000-12-21 2005-06-02 Infineon Technologies Ag Process for the production of micromechanical components
US6620712B2 (en) 2001-02-14 2003-09-16 Intpax, Inc. Defined sacrifical region via ion implantation for micro-opto-electro-mechanical system (MOEMS) applications
CN1228818C (en) 2001-04-02 2005-11-23 华邦电子股份有限公司 Method for forming funnel-shaped dielectric layer window in semiconductor
US6756317B2 (en) 2001-04-23 2004-06-29 Memx, Inc. Method for making a microstructure by surface micromachining
US6600587B2 (en) 2001-04-23 2003-07-29 Memx, Inc. Surface micromachined optical system with reinforced mirror microstructure
US6602791B2 (en) 2001-04-27 2003-08-05 Dalsa Semiconductor Inc. Manufacture of integrated fluidic devices
US6576489B2 (en) 2001-05-07 2003-06-10 Applied Materials, Inc. Methods of forming microstructure devices
AU2002303842A1 (en) 2001-05-22 2002-12-03 Reflectivity, Inc. A method for making a micromechanical device by removing a sacrificial layer with multiple sequential etchants
KR100421217B1 (en) 2001-05-30 2004-03-02 삼성전자주식회사 Method for fabricating stiction-resistant micromachined structures
DE10127622B4 (en) 2001-06-07 2009-10-22 Qimonda Ag Method of making an isolation trench filled with HDPCVD oxide
US6958123B2 (en) 2001-06-15 2005-10-25 Reflectivity, Inc Method for removing a sacrificial material with a compressed fluid
US7005314B2 (en) 2001-06-27 2006-02-28 Intel Corporation Sacrificial layer technique to make gaps in MEMS applications
US6905613B2 (en) 2001-07-10 2005-06-14 Honeywell International Inc. Use of an organic dielectric as a sacrificial layer
US6930364B2 (en) 2001-09-13 2005-08-16 Silicon Light Machines Corporation Microelectronic mechanical system and methods
DE10148864A1 (en) 2001-10-04 2003-04-17 Bosch Gmbh Robert Process for reducing adhesion in micromechanical components based on a semiconductor material comprises changing the impurity sites of the semiconductor material used
US6936183B2 (en) 2001-10-17 2005-08-30 Applied Materials, Inc. Etch process for etching microstructures
AUPR846701A0 (en) 2001-10-25 2001-11-15 Microtechnology Centre Management Limited A method of fabrication of micro-devices
US6666979B2 (en) 2001-10-29 2003-12-23 Applied Materials, Inc. Dry etch release of MEMS structures
US7195872B2 (en) 2001-11-09 2007-03-27 3D Biosurfaces, Inc. High surface area substrates for microarrays and methods to make same
US20030111439A1 (en) 2001-12-14 2003-06-19 Fetter Linus Albert Method of forming tapered electrodes for electronic devices
US6782166B1 (en) 2001-12-21 2004-08-24 United States Of America As Represented By The Secretary Of The Air Force Optically transparent electrically conductive charge sheet poling electrodes to maximize performance of electro-optic devices
JP2003195189A (en) 2001-12-25 2003-07-09 Fuji Photo Film Co Ltd Optical modulation element and its manufacturing method
US6608268B1 (en) 2002-02-05 2003-08-19 Memtronics, A Division Of Cogent Solutions, Inc. Proximity micro-electro-mechanical system
US6794119B2 (en) 2002-02-12 2004-09-21 Iridigm Display Corporation Method for fabricating a structure for a microelectromechanical systems (MEMS) device
US6574033B1 (en) 2002-02-27 2003-06-03 Iridigm Display Corporation Microelectromechanical systems device and method for fabricating same
AUPS098002A0 (en) 2002-03-08 2002-03-28 University Of Western Australia, The Tunable cavity resonator, and method of fabricating same
US7145143B2 (en) 2002-03-18 2006-12-05 Honeywell International Inc. Tunable sensor
US7027200B2 (en) 2002-03-22 2006-04-11 Reflectivity, Inc Etching method used in fabrications of microstructures
US6965468B2 (en) 2003-07-03 2005-11-15 Reflectivity, Inc Micromirror array having reduced gap between adjacent micromirrors of the micromirror array
US7029829B2 (en) 2002-04-18 2006-04-18 The Regents Of The University Of Michigan Low temperature method for forming a microcavity on a substrate and article having same
US6954297B2 (en) 2002-04-30 2005-10-11 Hewlett-Packard Development Company, L.P. Micro-mirror device including dielectrophoretic liquid
US20030202264A1 (en) 2002-04-30 2003-10-30 Weber Timothy L. Micro-mirror device
US6791441B2 (en) 2002-05-07 2004-09-14 Raytheon Company Micro-electro-mechanical switch, and methods of making and using it
US6806110B2 (en) 2002-05-16 2004-10-19 Agilent Technologies, Inc. Monolithic multi-wavelength vertical-cavity surface emitting laser array and method of manufacture therefor
US6953702B2 (en) 2002-05-16 2005-10-11 Agilent Technologies, Inc. Fixed wavelength vertical cavity optical devices and method of manufacture therefor
DE10223359B4 (en) 2002-05-25 2011-08-11 Robert Bosch GmbH, 70469 Micromechanical component and method for producing an anti-adhesion layer on a micromechanical component
US6678085B2 (en) 2002-06-12 2004-01-13 Eastman Kodak Company High-contrast display system with scanned conformal grating device
GB0214206D0 (en) 2002-06-19 2002-07-31 Filtronic Compound Semiconduct A micro-electromechanical variable capacitor
US20040001258A1 (en) 2002-06-28 2004-01-01 Mandeep Singh Solid state etalons with low thermally-induced optical path length change
US7781850B2 (en) 2002-09-20 2010-08-24 Qualcomm Mems Technologies, Inc. Controlling electromechanical behavior of structures within a microelectromechanical systems device
US6872319B2 (en) 2002-09-30 2005-03-29 Rockwell Scientific Licensing, Llc Process for high yield fabrication of MEMS devices
JP2004149607A (en) 2002-10-29 2004-05-27 Jsr Corp Polymer for forming cavity between multilayered wirings and its manufacturing method
US7370185B2 (en) 2003-04-30 2008-05-06 Hewlett-Packard Development Company, L.P. Self-packaged optical interference display device having anti-stiction bumps, integral micro-lens, and reflection-absorbing layers
US6909589B2 (en) 2002-11-20 2005-06-21 Corporation For National Research Initiatives MEMS-based variable capacitor
US7553686B2 (en) 2002-12-17 2009-06-30 The Regents Of The University Of Colorado, A Body Corporate Al2O3 atomic layer deposition to enhance the deposition of hydrophobic or hydrophilic coatings on micro-electromechanical devices
US6872654B2 (en) 2002-12-26 2005-03-29 Intel Corporation Method of fabricating a bismaleimide (BMI) ASA sacrifical material for an integrated circuit air gap dielectric
TW559686B (en) 2002-12-27 2003-11-01 Prime View Int Co Ltd Optical interference type panel and the manufacturing method thereof
US6808953B2 (en) 2002-12-31 2004-10-26 Robert Bosch Gmbh Gap tuning for surface micromachined structures in an epitaxial reactor
US6943448B2 (en) 2003-01-23 2005-09-13 Akustica, Inc. Multi-metal layer MEMS structure and process for making the same
TW557395B (en) 2003-01-29 2003-10-11 Yen Sun Technology Corp Optical interference type reflection panel and the manufacturing method thereof
TW200413810A (en) 2003-01-29 2004-08-01 Prime View Int Co Ltd Light interference display panel and its manufacturing method
US20040157426A1 (en) 2003-02-07 2004-08-12 Luc Ouellet Fabrication of advanced silicon-based MEMS devices
US7459402B2 (en) 2003-02-12 2008-12-02 Texas Instruments Incorporated Protection layers in micromirror array devices
US20040159629A1 (en) 2003-02-19 2004-08-19 Cabot Microelectronics Corporation MEM device processing with multiple material sacrificial layers
US7027202B1 (en) 2003-02-28 2006-04-11 Silicon Light Machines Corp Silicon substrate as a light modulator sacrificial layer
US6720267B1 (en) 2003-03-19 2004-04-13 United Microelectronics Corp. Method for forming a cantilever beam model micro-electromechanical system
US6913942B2 (en) 2003-03-28 2005-07-05 Reflectvity, Inc Sacrificial layers for use in fabrications of microelectromechanical devices
US7128843B2 (en) 2003-04-04 2006-10-31 Hrl Laboratories, Llc Process for fabricating monolithic membrane substrate structures with well-controlled air gaps
TW567355B (en) 2003-04-21 2003-12-21 Prime View Int Co Ltd An interference display cell and fabrication method thereof
TWI226504B (en) 2003-04-21 2005-01-11 Prime View Int Co Ltd A structure of an interference display cell
TW594360B (en) 2003-04-21 2004-06-21 Prime View Int Corp Ltd A method for fabricating an interference display cell
TWI224235B (en) 2003-04-21 2004-11-21 Prime View Int Co Ltd A method for fabricating an interference display cell
KR100599083B1 (en) 2003-04-22 2006-07-12 삼성전자주식회사 Cantilevered type Film Bulk Acoustic Resonator fabrication method and Resonator fabricated by the same
TW591716B (en) 2003-05-26 2004-06-11 Prime View Int Co Ltd A structure of a structure release and manufacturing the same
TW570896B (en) 2003-05-26 2004-01-11 Prime View Int Co Ltd A method for fabricating an interference display cell
US7221495B2 (en) 2003-06-24 2007-05-22 Idc Llc Thin film precursor stack for MEMS manufacturing
TWI305599B (en) 2003-08-15 2009-01-21 Qualcomm Mems Technologies Inc Interference display panel and method thereof
TWI230801B (en) 2003-08-29 2005-04-11 Prime View Int Co Ltd Reflective display unit using interferometric modulation and manufacturing method thereof
US6982820B2 (en) 2003-09-26 2006-01-03 Prime View International Co., Ltd. Color changeable pixel
TW593126B (en) 2003-09-30 2004-06-21 Prime View Int Co Ltd A structure of a micro electro mechanical system and manufacturing the same
US6861277B1 (en) 2003-10-02 2005-03-01 Hewlett-Packard Development Company, L.P. Method of forming MEMS device
US7012726B1 (en) 2003-11-03 2006-03-14 Idc, Llc MEMS devices with unreleased thin film components
DE10352001A1 (en) 2003-11-07 2005-06-09 Robert Bosch Gmbh Micromechanical component with a membrane and method for producing such a component
US20050170670A1 (en) 2003-11-17 2005-08-04 King William P. Patterning of sacrificial materials
US7056757B2 (en) 2003-11-25 2006-06-06 Georgia Tech Research Corporation Methods of forming oxide masks with submicron openings and microstructures formed thereby
KR20060121168A (en) 2003-12-01 2006-11-28 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 Removal of mems sacrificial layers using supercritical fluid/chemical formulations
US20050118832A1 (en) 2003-12-01 2005-06-02 Korzenski Michael B. Removal of MEMS sacrificial layers using supercritical fluid/chemical formulations
US7041571B2 (en) 2004-03-01 2006-05-09 International Business Machines Corporation Air gap interconnect structure and method of manufacture
US7119945B2 (en) 2004-03-03 2006-10-10 Idc, Llc Altering temporal response of microelectromechanical elements
TW200530669A (en) 2004-03-05 2005-09-16 Prime View Int Co Ltd Interference display plate and manufacturing method thereof
US7256107B2 (en) 2004-05-04 2007-08-14 The Regents Of The University Of California Damascene process for use in fabricating semiconductor structures having micro/nano gaps
JP2005342808A (en) 2004-05-31 2005-12-15 Oki Electric Ind Co Ltd Manufacturing method of mems device
KR100627139B1 (en) 2004-06-18 2006-09-25 한국전자통신연구원 Micromechanical structures and Method thereof
CA2575314A1 (en) 2004-07-29 2006-02-09 Idc, Llc System and method for micro-electromechanical operating of an interferometric modulator
US20060037933A1 (en) 2004-08-23 2006-02-23 Wei-Ya Wang Mirror process using tungsten passivation layer for preventing metal-spiking induced mirror bridging and improving mirror curvature
US7492502B2 (en) 2004-09-27 2009-02-17 Idc, Llc Method of fabricating a free-standing microstructure
US7429334B2 (en) 2004-09-27 2008-09-30 Idc, Llc Methods of fabricating interferometric modulators by selectively removing a material
US7692839B2 (en) 2004-09-27 2010-04-06 Qualcomm Mems Technologies, Inc. System and method of providing MEMS device with anti-stiction coating
US7369296B2 (en) * 2004-09-27 2008-05-06 Idc, Llc Device and method for modifying actuation voltage thresholds of a deformable membrane in an interferometric modulator
US7327510B2 (en) 2004-09-27 2008-02-05 Idc, Llc Process for modifying offset voltage characteristics of an interferometric modulator
US7446926B2 (en) 2004-09-27 2008-11-04 Idc, Llc System and method of providing a regenerating protective coating in a MEMS device
US20060066932A1 (en) 2004-09-27 2006-03-30 Clarence Chui Method of selective etching using etch stop layer
US7309902B2 (en) 2004-11-26 2007-12-18 Hewlett-Packard Development Company, L.P. Microelectronic device with anti-stiction coating
TW200628877A (en) 2005-02-04 2006-08-16 Prime View Int Co Ltd Method of manufacturing optical interference type color display
US20060234412A1 (en) 2005-04-19 2006-10-19 Hewlett-Packard Development Company, L.P. Intellectual Property Administration MEMS release methods
EP1910216A1 (en) 2005-07-22 2008-04-16 QUALCOMM Incorporated Support structure for mems device and methods therefor
JP2009503565A (en) 2005-07-22 2009-01-29 クアルコム，インコーポレイテッド Support structure for MEMS device and method thereof
US8043950B2 (en) 2005-10-26 2011-10-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
GB0523715D0 (en) 2005-11-22 2005-12-28 Cavendish Kinetics Ltd Method of minimising contact area
US7795061B2 (en) 2005-12-29 2010-09-14 Qualcomm Mems Technologies, Inc. Method of creating MEMS device cavities by a non-etching process
US7382515B2 (en) 2006-01-18 2008-06-03 Qualcomm Mems Technologies, Inc. Silicon-rich silicon nitrides as etch stops in MEMS manufacture
US7547568B2 (en) 2006-02-22 2009-06-16 Qualcomm Mems Technologies, Inc. Electrical conditioning of MEMS device and insulating layer thereof
US7450295B2 (en) 2006-03-02 2008-11-11 Qualcomm Mems Technologies, Inc. Methods for producing MEMS with protective coatings using multi-component sacrificial layers
US20070249078A1 (en) 2006-04-19 2007-10-25 Ming-Hau Tung Non-planar surface structures and process for microelectromechanical systems
US7417784B2 (en) 2006-04-19 2008-08-26 Qualcomm Mems Technologies, Inc. Microelectromechanical device and method utilizing a porous surface
US7527996B2 (en) 2006-04-19 2009-05-05 Qualcomm Mems Technologies, Inc. Non-planar surface structures and process for microelectromechanical systems
US7321457B2 (en) 2006-06-01 2008-01-22 Qualcomm Incorporated Process and structure for fabrication of MEMS device having isolated edge posts
US7821010B2 (en) * 2006-06-28 2010-10-26 Spatial Photonics, Inc. Low temperature fabrication of conductive micro structures
US7763546B2 (en) 2006-08-02 2010-07-27 Qualcomm Mems Technologies, Inc. Methods for reducing surface charges during the manufacture of microelectromechanical systems devices
US7733552B2 (en) 2007-03-21 2010-06-08 Qualcomm Mems Technologies, Inc MEMS cavity-coating layers and methods
KR20100016195A (en) 2007-04-04 2010-02-12 퀄컴 엠이엠스 테크놀로지스, 인크. Eliminate release etch attack by interface modification in sacrificial layers
US7719752B2 (en) 2007-05-11 2010-05-18 Qualcomm Mems Technologies, Inc. MEMS structures, methods of fabricating MEMS components on separate substrates and assembly of same
US7569488B2 (en) 2007-06-22 2009-08-04 Qualcomm Mems Technologies, Inc. Methods of making a MEMS device by monitoring a process parameter
WO2009006340A2 (en) 2007-06-29 2009-01-08 Qualcomm Mems Technologies, Inc. Electromechanical device treatment with water vapor
US7851239B2 (en) 2008-06-05 2010-12-14 Qualcomm Mems Technologies, Inc. Low temperature amorphous silicon sacrificial layer for controlled adhesion in MEMS devices

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030214639A1 (en) * 2000-08-03 2003-11-20 Satyadev Patel Micromirrors with OFF-angle electrodes and stops
US20060067650A1 (en) * 2004-09-27 2006-03-30 Clarence Chui Method of making a reflective display device using thin film transistor production techniques
US20070041076A1 (en) * 2005-08-19 2007-02-22 Fan Zhong MEMS device having support structures configured to minimize stress-related deformation and methods for fabricating same
US20070249079A1 (en) * 2006-04-19 2007-10-25 Teruo Sasagawa Non-planar surface structures and process for microelectromechanical systems

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
BOUCINHA M ET AL: "Amorphous silicon air-gap resonators on large-area substrates", APPLIED PHYSICS LETTERS, AIP, AMERICAN INSTITUTE OF PHYSICS, MELVILLE, NY, US LNKD- DOI:10.1063/1.1306912, vol. 77, no. 6, 7 August 2000 (2000-08-07), pages 907 - 909, XP012027234, ISSN: 0003-6951 *
CHEN-KUEI CHUNG ET AL: "Fabrication and characterization of amorphous Si films by PECVD for MEMS; Fabrication and characterization of amorphous Si films by PECVD for MEMS", JOURNAL OF MICROMECHANICS & MICROENGINEERING, INSTITUTE OF PHYSICS PUBLISHING, BRISTOL, GB LNKD- DOI:10.1088/0960-1317/15/1/021, vol. 15, no. 1, 1 January 2005 (2005-01-01), pages 136 - 142, XP020091350, ISSN: 0960-1317 *
CIPRIAN ILIESCU ET AL: "Thick and low-stress PECVD amorphous silicon for MEMS applications", JOURNAL OF MICROMECHANICS & MICROENGINEERING, INSTITUTE OF PHYSICS PUBLISHING, BRISTOL, GB, vol. 18, no. 1, 1 January 2008 (2008-01-01), pages 15024, XP020129952, ISSN: 0960-1317 *
YAO T-J ET AL: "BrF3 dry release technology for large freestanding parylene microstructures and electrostatic actuators", SENSORS AND ACTUATORS A, ELSEVIER SEQUOIA S.A., LAUSANNE, CH LNKD- DOI:10.1016/S0924-4247(02)00019-5, vol. 97-98, 1 April 2002 (2002-04-01), pages 771 - 775, XP004361681, ISSN: 0924-4247 *

Also Published As

Publication number Publication date
WO2009149213A2 (en) 2009-12-10
KR20110014709A (en) 2011-02-11
CN102046516A (en) 2011-05-04
US7851239B2 (en) 2010-12-14
US8358458B2 (en) 2013-01-22
US20090305010A1 (en) 2009-12-10
JP2011525861A (en) 2011-09-29
EP2297026A2 (en) 2011-03-23
US20110051224A1 (en) 2011-03-03

Similar Documents

Publication Publication Date Title
WO2009149213A3 (en) Low temperature amorphous silicon sacrificial layer for controlled adhesion in mems devices
TW200740688A (en) Methods for producing MEMS with protective coatings using multi-component sacrificial layers
WO2007140375A3 (en) Methods and systems for selectively depositing si-containing films using chloropolysilanes
WO2012075033A3 (en) Environmentally responsive optical microstructured hybrid actuator assemblies and applications thereof
TW200739978A (en) MEMS process and device
WO2007134330A3 (en) Multi-post structures
TW200746241A (en) Non-planar surface structures and process for microelectromechanical systems
WO2008115716A3 (en) Mems cavity-coating layers and methods
TW200715358A (en) MEMS device having support structures configured to minimize stress-related deformation and methods for fabricating same
WO2005044721A8 (en) Mems devices with unreleased thin film components
TW200744940A (en) Non-planar surface structures and process for microelectromechanical systems
WO2007024711A3 (en) Oscillator and method of making for atomic force microscope and other applications
WO2010039660A3 (en) Multi-thickness layers for mems and mask - saving sequence for same
BRPI0814680A2 (en) mems optical device and its manufacturing method
TW200744941A (en) Microelectromechanical device and method utilizing nanoparticles
TW200744939A (en) Non-planar surface structures and process for microelectromechanical systems
WO2013070830A3 (en) Method of binding nanoparticles to glass
EP2208370A4 (en) Activating applications based on accelerometer data
EP2112532A4 (en) Electrowetting device and method for manufacturing the same
FR2923079B1 (en) SUBSTRATES SOI WITH INSULATED FINE LAYER ENTERREE
WO2010061363A3 (en) Electromechanical transducer device having thermal compensation and method of manufacture
WO2007109213A3 (en) On/off reversible adhesive
WO2011094300A3 (en) Process and structure for high temperature selective fusion bonding
EP2356417A4 (en) High temperature transducer using soi electronics
EP2700614A3 (en) Methods for fabricating mems structures by etching sacrificial features embedded in glass

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 200980120517.1

Country of ref document: CN

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 09759372

Country of ref document: EP

Kind code of ref document: A2

WWE Wipo information: entry into national phase

Ref document number: 2011512625

Country of ref document: JP

NENP Non-entry into the national phase

Ref country code: DE

WWE Wipo information: entry into national phase

Ref document number: 8413/CHENP/2010

Country of ref document: IN

ENP Entry into the national phase

Ref document number: 20117000008

Country of ref document: KR

Kind code of ref document: A

WWE Wipo information: entry into national phase

Ref document number: 2009759372

Country of ref document: EP