WO2010059451A3 - Select devices including an open volume, memory devices and systems including same, and methods for forming same - Google Patents

Select devices including an open volume, memory devices and systems including same, and methods for forming same Download PDF

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Publication number
WO2010059451A3
WO2010059451A3 PCT/US2009/063761 US2009063761W WO2010059451A3 WO 2010059451 A3 WO2010059451 A3 WO 2010059451A3 US 2009063761 W US2009063761 W US 2009063761W WO 2010059451 A3 WO2010059451 A3 WO 2010059451A3
Authority
WO
WIPO (PCT)
Prior art keywords
same
devices
select
select devices
open volume
Prior art date
Application number
PCT/US2009/063761
Other languages
French (fr)
Other versions
WO2010059451A2 (en
Inventor
Bhaskar Srinivasan
Gurtej S. Sandhu
Original Assignee
Micron Technology, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology, Inc. filed Critical Micron Technology, Inc.
Priority to KR1020117012413A priority Critical patent/KR101262580B1/en
Priority to JP2011536404A priority patent/JP5601594B2/en
Priority to CN200980146099.3A priority patent/CN102217077B/en
Publication of WO2010059451A2 publication Critical patent/WO2010059451A2/en
Publication of WO2010059451A3 publication Critical patent/WO2010059451A3/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/88—Tunnel-effect diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/102—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including bipolar components
    • H01L27/1021—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including bipolar components including diodes only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/957—Making metal-insulator-metal device

Abstract

Select devices including an open volume that functions as a high bandgap material having a low dielectric constant are disclosed. The open volume may provide a more nonlinear, asymmetric I-V curve and enhanced rectifying behavior in the select devices. The select device may comprise, for example, a metal insulator insulator metal (MIIM) device. Various methods may be used to form select devices and memory systems including such select devices. Memory devices and electronic systems include such select devices.
PCT/US2009/063761 2008-11-19 2009-11-09 Select devices including an open volume, memory devices and systems including same, and methods for forming same WO2010059451A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1020117012413A KR101262580B1 (en) 2008-11-19 2009-11-09 Select devices including an open volume, memory devices and systems including same, and methods for forming same
JP2011536404A JP5601594B2 (en) 2008-11-19 2009-11-09 Selection device including open volume, memory device and system including the device, and method of forming the device
CN200980146099.3A CN102217077B (en) 2008-11-19 2009-11-09 Select devices including an open volume, memory devices and systems including same, and methods for forming same

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/274,181 US8008162B2 (en) 2008-11-19 2008-11-19 Select devices including an open volume, memory devices and systems including same, and methods for forming same
US12/274,181 2008-11-19

Publications (2)

Publication Number Publication Date
WO2010059451A2 WO2010059451A2 (en) 2010-05-27
WO2010059451A3 true WO2010059451A3 (en) 2010-08-26

Family

ID=42171255

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2009/063761 WO2010059451A2 (en) 2008-11-19 2009-11-09 Select devices including an open volume, memory devices and systems including same, and methods for forming same

Country Status (6)

Country Link
US (3) US8008162B2 (en)
JP (1) JP5601594B2 (en)
KR (1) KR101262580B1 (en)
CN (1) CN102217077B (en)
TW (1) TWI401831B (en)
WO (1) WO2010059451A2 (en)

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US8080460B2 (en) 2008-11-26 2011-12-20 Micron Technology, Inc. Methods of forming diodes
EP2858118B1 (en) * 2013-10-07 2016-09-14 IMEC vzw Selector for RRAM
KR101685063B1 (en) * 2015-02-06 2016-12-21 서울대학교산학협력단 Diode device comprising cathode buffer layer
US20170271406A1 (en) * 2015-02-27 2017-09-21 Hewlett Packard Enterprise Development Lp Superlinear selectors
WO2016153516A1 (en) * 2015-03-26 2016-09-29 Hewlett-Packard Development Company, L.P. Resistance memory devices including cation metal doped volatile selectors and cation metal electrodes
US9876169B2 (en) * 2015-06-12 2018-01-23 Taiwan Semiconductor Manufacturing Co., Ltd. RRAM devices and methods
WO2017019070A1 (en) * 2015-07-29 2017-02-02 Hewlett Packard Enterprise Development Lp Non-volatile resistance memory devices including a volatile selector with copper and silicon dioxide
US10431453B2 (en) * 2016-11-28 2019-10-01 International Business Machines Corporation Electric field assisted placement of nanomaterials through dielectric engineering
US10541365B1 (en) * 2018-08-15 2020-01-21 Taiwan Semiconductor Manufacturing Co., Ltd. Phase change memory and method of fabricating same
CN111029402A (en) * 2019-11-14 2020-04-17 天津大学 Flexible bottom gate thin film transistor of zirconium-titanium oxide gate dielectric layer and manufacturing method thereof

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Also Published As

Publication number Publication date
US8008162B2 (en) 2011-08-30
KR20110088540A (en) 2011-08-03
US8957403B2 (en) 2015-02-17
JP5601594B2 (en) 2014-10-08
US20100123122A1 (en) 2010-05-20
CN102217077B (en) 2015-04-15
TWI401831B (en) 2013-07-11
WO2010059451A2 (en) 2010-05-27
KR101262580B1 (en) 2013-05-08
TW201029241A (en) 2010-08-01
US8541770B2 (en) 2013-09-24
US20130285110A1 (en) 2013-10-31
JP2012509577A (en) 2012-04-19
CN102217077A (en) 2011-10-12
US20110298007A1 (en) 2011-12-08

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