WO2010120632A3 - Barrier for doped molybdenum targets - Google Patents

Barrier for doped molybdenum targets Download PDF

Info

Publication number
WO2010120632A3
WO2010120632A3 PCT/US2010/030458 US2010030458W WO2010120632A3 WO 2010120632 A3 WO2010120632 A3 WO 2010120632A3 US 2010030458 W US2010030458 W US 2010030458W WO 2010120632 A3 WO2010120632 A3 WO 2010120632A3
Authority
WO
WIPO (PCT)
Prior art keywords
barrier
sputtering
doped molybdenum
support structure
molybdenum targets
Prior art date
Application number
PCT/US2010/030458
Other languages
French (fr)
Other versions
WO2010120632A2 (en
Inventor
Daniel R. Juliano
Deborah Mathias
Neil M. Mackie
Original Assignee
Miasole
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Miasole filed Critical Miasole
Publication of WO2010120632A2 publication Critical patent/WO2010120632A2/en
Publication of WO2010120632A3 publication Critical patent/WO2010120632A3/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0623—Sulfides, selenides or tellurides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/562—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks for coating elongated substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
    • H01L31/0749—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
    • H01L31/206—Particular processes or apparatus for continuous treatment of the devices, e.g. roll-to roll processes, multi-chamber deposition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

A sputtering target, including a sputtering layer and a support structure. The sputtering layer includes an alkali-containing transition metal. The support structure includes a second material that does not negatively impact the performance of a copper indium selenide (CIS) based semiconductor absorber layer of a solar cell. The sputtering layer directly contacts the second material.
PCT/US2010/030458 2009-04-13 2010-04-09 Barrier for doped molybdenum targets WO2010120632A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/385,571 2009-04-13
US12/385,571 US7785921B1 (en) 2009-04-13 2009-04-13 Barrier for doped molybdenum targets

Publications (2)

Publication Number Publication Date
WO2010120632A2 WO2010120632A2 (en) 2010-10-21
WO2010120632A3 true WO2010120632A3 (en) 2011-02-24

Family

ID=42646623

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2010/030458 WO2010120632A2 (en) 2009-04-13 2010-04-09 Barrier for doped molybdenum targets

Country Status (2)

Country Link
US (4) US7785921B1 (en)
WO (1) WO2010120632A2 (en)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8110738B2 (en) 2009-02-20 2012-02-07 Miasole Protective layer for large-scale production of thin-film solar cells
US9284639B2 (en) * 2009-07-30 2016-03-15 Apollo Precision Kunming Yuanhong Limited Method for alkali doping of thin film photovoltaic materials
US20110067998A1 (en) * 2009-09-20 2011-03-24 Miasole Method of making an electrically conductive cadmium sulfide sputtering target for photovoltaic manufacturing
US8709548B1 (en) 2009-10-20 2014-04-29 Hanergy Holding Group Ltd. Method of making a CIG target by spray forming
US8709335B1 (en) 2009-10-20 2014-04-29 Hanergy Holding Group Ltd. Method of making a CIG target by cold spraying
US20110162696A1 (en) * 2010-01-05 2011-07-07 Miasole Photovoltaic materials with controllable zinc and sodium content and method of making thereof
JP4872014B1 (en) * 2010-08-31 2012-02-08 Ｊｘ日鉱日石金属株式会社 Laminated structure and manufacturing method thereof
US7935558B1 (en) 2010-10-19 2011-05-03 Miasole Sodium salt containing CIG targets, methods of making and methods of use thereof
DE102011012034A1 (en) 2011-02-22 2012-08-23 Heraeus Materials Technology Gmbh & Co. Kg Tubular sputtering target
AT12695U1 (en) * 2011-04-08 2012-10-15 Plansee Se PIPE TARGET WITH PROTECTION DEVICE
TWI538235B (en) 2011-04-19 2016-06-11 弗里松股份有限公司 Thin-film photovoltaic device and fabrication method
JP5930791B2 (en) 2011-04-28 2016-06-08 日東電工株式会社 Vacuum film-forming method and laminate obtained by the method
JP6049051B2 (en) * 2011-07-29 2016-12-21 日東電工株式会社 Double-side vacuum deposition method
JP5959099B2 (en) * 2011-07-29 2016-08-02 日東電工株式会社 Manufacturing method of laminate
JP5963193B2 (en) * 2011-07-29 2016-08-03 日東電工株式会社 Manufacturing method of laminate
US9218945B2 (en) 2011-12-12 2015-12-22 Apollo Precision Beijing Limited Magnetron with gradually increasing magnetic field out of turnarounds
US10043921B1 (en) 2011-12-21 2018-08-07 Beijing Apollo Ding Rong Solar Technology Co., Ltd. Photovoltaic cell with high efficiency cigs absorber layer with low minority carrier lifetime and method of making thereof
US9255323B2 (en) 2012-06-18 2016-02-09 Apollo Precision Fujian Limited Sputtering target including a feature to reduce chalcogen build up and arcing on a backing tube
KR101315311B1 (en) * 2012-07-13 2013-10-04 한국에너지기술연구원 Back contact and cis-based solar cell comprising the same
WO2014025176A1 (en) * 2012-08-09 2014-02-13 한국에너지기술연구원 Flexible-substrate cigs solar cell having improved na supply method, and method for manufacturing same
CN102867860B (en) * 2012-09-12 2015-08-12 厦门神科太阳能有限公司 A kind of transition zone for CIGS base film photovoltaic cell and preparation method thereof
CN104704617B (en) 2012-12-21 2018-03-20 弗立泽姆公司 Thin-film photovoltaic devices of the manufacture added with potassium
TWI677105B (en) 2014-05-23 2019-11-11 瑞士商弗里松股份有限公司 Method of fabricating thin-film optoelectronic device and thin-film optoelectronic device obtainable by said method
CN104073771B (en) * 2014-07-01 2016-04-13 河北工业大学 A kind of molybdenum mixes the preparation method of sodium sputtering target material
TWI661991B (en) 2014-09-18 2019-06-11 瑞士商弗里松股份有限公司 Self-assembly patterning for fabricating thin-film devices
US10100439B2 (en) 2015-05-08 2018-10-16 Sunpower Corporation High throughput chemical vapor deposition electrode
HUE053775T2 (en) 2016-02-11 2021-07-28 Flisom Ag Self-assembly patterning for fabricating thin-film devices
WO2017137268A1 (en) 2016-02-11 2017-08-17 Flisom Ag Fabricating thin-film optoelectronic devices with added rubidium and/or cesium
CN106591786B (en) * 2016-11-11 2019-02-15 洛阳科威钨钼有限公司 A kind of preparation method of doping type molybdenum target material
CN113293352B (en) * 2021-06-01 2022-05-17 深圳市千禾盛科技有限公司 Low-cost target for vacuum coating

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060096537A1 (en) * 2004-11-10 2006-05-11 Daystar Technologies, Inc. Method and apparatus for forming a thin-film solar cell using a continuous process
US20070062805A1 (en) * 2005-09-20 2007-03-22 Guardian Industries Corp. Sputtering target with bonding layer of varying thickness under target material
US20080193798A1 (en) * 2004-08-31 2008-08-14 H. C. Starck Inc. Molybdenum Tubular Sputtering Targets with Uniform Grain Size and Texture
US20080283389A1 (en) * 2004-05-11 2008-11-20 Honda Motor Co., Ltd. Method for Manufacturing Chalcopyrite Thin-Film Solar Cell

Family Cites Families (86)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US259322A (en) * 1882-06-13 Lubricator
US2890419A (en) * 1955-03-30 1959-06-09 Sylvania Electric Prod Switch tube device for waveguides
US4358073A (en) * 1977-05-26 1982-11-09 Karl Eickmann Fluid motor with moveable members workable independently of its drive means
US4356073A (en) 1981-02-12 1982-10-26 Shatterproof Glass Corporation Magnetron cathode sputtering apparatus
US5744252A (en) * 1989-09-21 1998-04-28 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Flexible ceramic-metal insulation composite and method of making
JPH0539566A (en) 1991-02-19 1993-02-19 Mitsubishi Materials Corp Sputtering target and its production
JPH0597478A (en) * 1991-10-04 1993-04-20 Nippon Sheet Glass Co Ltd Water repellent glass article and its production
FI93316C (en) * 1993-02-10 1995-03-27 Kemira Oy Hydrogenation catalyst used in the hydrogen peroxide process and method for its preparation
BE1007535A3 (en) 1993-09-24 1995-07-25 Innovative Sputtering Tech Layered metal structure.
US5480695A (en) * 1994-08-10 1996-01-02 Tenhover; Michael A. Ceramic substrates and magnetic data storage components prepared therefrom
SE508676C2 (en) * 1994-10-21 1998-10-26 Nordic Solar Energy Ab Process for making thin film solar cells
US5522535A (en) 1994-11-15 1996-06-04 Tosoh Smd, Inc. Methods and structural combinations providing for backing plate reuse in sputter target/backing plate assemblies
DE4442824C1 (en) * 1994-12-01 1996-01-25 Siemens Ag Solar cell having higher degree of activity
WO1996034124A1 (en) 1995-04-25 1996-10-31 The Boc Group, Inc. Sputtering system using cylindrical rotating magnetron electrically powered using alternating current
WO1998031818A2 (en) * 1997-01-21 1998-07-23 Human Genome Sciences, Inc. Tace-like and matrilysin-like polypeptides
US5904988A (en) * 1997-05-27 1999-05-18 General Electric Company Sprayable, condensation curable silicone foul release coatings and articles coated therewith
US6506493B1 (en) * 1998-11-09 2003-01-14 Nanogram Corporation Metal oxide particles
JPH11274534A (en) 1998-03-25 1999-10-08 Yazaki Corp I-iii-vi compound semiconductor and thin film solar cell using the same
JPH11298016A (en) 1998-04-10 1999-10-29 Yazaki Corp Solar battery
GB9809025D0 (en) * 1998-04-28 1998-06-24 Zeneca Ltd Amine dispersants
JP2000091603A (en) 1998-09-07 2000-03-31 Honda Motor Co Ltd Solar battery
AU731869B2 (en) * 1998-11-12 2001-04-05 Kaneka Corporation Solar cell module
JP3782353B2 (en) * 1999-11-22 2006-06-07 株式会社日鉱マテリアルズ Titanium target for sputtering
US6310281B1 (en) 2000-03-16 2001-10-30 Global Solar Energy, Inc. Thin-film, flexible photovoltaic module
US6372538B1 (en) 2000-03-16 2002-04-16 University Of Delaware Fabrication of thin-film, flexible photovoltaic module
US7194197B1 (en) 2000-03-16 2007-03-20 Global Solar Energy, Inc. Nozzle-based, vapor-phase, plume delivery structure for use in production of thin-film deposition layer
KR100419756B1 (en) 2000-06-23 2004-02-21 아넬바 가부시기가이샤 Thin-film deposition apparatus
US6525264B2 (en) 2000-07-21 2003-02-25 Sharp Kabushiki Kaisha Thin-film solar cell module
US6787692B2 (en) 2000-10-31 2004-09-07 National Institute Of Advanced Industrial Science & Technology Solar cell substrate, thin-film solar cell, and multi-junction thin-film solar cell
US6750394B2 (en) 2001-01-12 2004-06-15 Sharp Kabushiki Kaisha Thin-film solar cell and its manufacturing method
AU2002363298A1 (en) 2001-07-20 2003-05-12 Itn Energy Systems, Inc. Apparatus and method of production of thin film photovoltaic modules
US6858770B2 (en) * 2001-08-21 2005-02-22 Catalytic Distillation Technologies Paraffin alkylation
US6736986B2 (en) 2001-09-20 2004-05-18 Heliovolt Corporation Chemical synthesis of layers, coatings or films using surfactants
US6593213B2 (en) 2001-09-20 2003-07-15 Heliovolt Corporation Synthesis of layers, coatings or films using electrostatic fields
US6500733B1 (en) 2001-09-20 2002-12-31 Heliovolt Corporation Synthesis of layers, coatings or films using precursor layer exerted pressure containment
US6787012B2 (en) 2001-09-20 2004-09-07 Helio Volt Corp Apparatus for the synthesis of layers, coatings or films
US6559372B2 (en) 2001-09-20 2003-05-06 Heliovolt Corporation Photovoltaic devices and compositions for use therein
US6881647B2 (en) 2001-09-20 2005-04-19 Heliovolt Corporation Synthesis of layers, coatings or films using templates
EP1448826B1 (en) * 2001-10-23 2017-04-05 GE Osmonics, Inc. Three-dimensional non-woven media, filter and process
US6822158B2 (en) 2002-03-11 2004-11-23 Sharp Kabushiki Kaisha Thin-film solar cell and manufacture method therefor
US6690041B2 (en) 2002-05-14 2004-02-10 Global Solar Energy, Inc. Monolithically integrated diodes in thin-film photovoltaic devices
JP4012957B2 (en) 2002-06-07 2007-11-28 本田技研工業株式会社 Method for producing compound thin film solar cell
US7253017B1 (en) 2002-06-22 2007-08-07 Nanosolar, Inc. Molding technique for fabrication of optoelectronic devices
US6852920B2 (en) 2002-06-22 2005-02-08 Nanosolar, Inc. Nano-architected/assembled solar electricity cell
US7291782B2 (en) 2002-06-22 2007-11-06 Nanosolar, Inc. Optoelectronic device and fabrication method
US7371963B2 (en) * 2002-07-31 2008-05-13 Kyocera Corporation Photovoltaic power generation system
US7247346B1 (en) 2002-08-28 2007-07-24 Nanosolar, Inc. Combinatorial fabrication and high-throughput screening of optoelectronic devices
US6878612B2 (en) 2002-09-16 2005-04-12 Oki Electric Industry Co., Ltd. Self-aligned contact process for semiconductor device
AU2003275239A1 (en) 2002-09-30 2004-04-23 Miasole Manufacturing apparatus and method for large-scale production of thin-film solar cells
US6936761B2 (en) 2003-03-29 2005-08-30 Nanosolar, Inc. Transparent electrode, optoelectronic apparatus and devices
US7122392B2 (en) 2003-06-30 2006-10-17 Intel Corporation Methods of forming a high germanium concentration silicon germanium alloy by epitaxial lateral overgrowth and structures formed thereby
US6987071B1 (en) 2003-11-21 2006-01-17 Nanosolar, Inc. Solvent vapor infiltration of organic materials into nanostructures
US7306823B2 (en) 2004-09-18 2007-12-11 Nanosolar, Inc. Coated nanoparticles and quantum dots for solution-based fabrication of photovoltaic cells
US7605328B2 (en) * 2004-02-19 2009-10-20 Nanosolar, Inc. Photovoltaic thin-film cell produced from metallic blend using high-temperature printing
US7045205B1 (en) 2004-02-19 2006-05-16 Nanosolar, Inc. Device based on coated nanoporous structure
US7115304B2 (en) 2004-02-19 2006-10-03 Nanosolar, Inc. High throughput surface treatment on coiled flexible substrates
KR101115484B1 (en) 2004-03-15 2012-02-27 솔로파워, 인코포레이티드 Technique and apparatus for depositing thin layers of semiconductors for solar cell fabrication
US7122398B1 (en) 2004-03-25 2006-10-17 Nanosolar, Inc. Manufacturing of optoelectronic devices
US7374983B2 (en) * 2004-04-08 2008-05-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US7227066B1 (en) 2004-04-21 2007-06-05 Nanosolar, Inc. Polycrystalline optoelectronic devices based on templating technique
JP2006049768A (en) * 2004-08-09 2006-02-16 Showa Shell Sekiyu Kk Cis compound semiconductor thin film solar battery and manufacturing method for light absorbing layer of solar battery
US7262392B1 (en) 2004-09-18 2007-08-28 Nanosolar, Inc. Uniform thermal processing by internal impedance heating of elongated substrates
US7046205B2 (en) * 2004-10-19 2006-05-16 Tamez Daniel C Spring-loaded extendible antenna for a mobile phone
CN101087899A (en) 2004-11-10 2007-12-12 德斯塔尔科技公司 Vertical production of photovoltaic devices
JP2006165386A (en) * 2004-12-09 2006-06-22 Showa Shell Sekiyu Kk Cis system thin film solar cell and method for manufacturing the same
US7287724B2 (en) * 2005-03-25 2007-10-30 Aeroballoon Usa, Inc. Tether system for balloon ride
US7183608B2 (en) * 2005-05-26 2007-02-27 Macronix International Co., Ltd. Memory array including isolation between memory cell and dummy cell portions
US7196262B2 (en) 2005-06-20 2007-03-27 Solyndra, Inc. Bifacial elongated solar cell devices
US20070074989A1 (en) * 2005-09-30 2007-04-05 Musculoskeletal Transplant Foundation Container for lyophilization and storage of tissue
JP4265591B2 (en) * 2005-09-30 2009-05-20 ブラザー工業株式会社 Rubber key device, portable terminal, and image processing device
EP1960565A4 (en) 2005-10-03 2010-06-02 Thermal Conductive Bonding Inc Very long cylindrical sputtering target and method for manufacturing
ES2391255T3 (en) * 2005-12-21 2012-11-22 Saint-Gobain Glass France Thin film photovoltaic device
US7259322B2 (en) 2006-01-09 2007-08-21 Solyndra, Inc. Interconnects for solar cell devices
US7235736B1 (en) 2006-03-18 2007-06-26 Solyndra, Inc. Monolithic integration of cylindrical solar cells
JP2009531871A (en) 2006-03-28 2009-09-03 ソロパワー、インコーポレイテッド Technology for manufacturing photovoltaic modules
US7439110B2 (en) * 2006-05-19 2008-10-21 International Business Machines Corporation Strained HOT (hybrid orientation technology) MOSFETs
US20070283997A1 (en) 2006-06-13 2007-12-13 Miasole Photovoltaic module with integrated current collection and interconnection
US20070283996A1 (en) 2006-06-13 2007-12-13 Miasole Photovoltaic module with insulating interconnect carrier
US20080053519A1 (en) 2006-08-30 2008-03-06 Miasole Laminated photovoltaic cell
US20080142071A1 (en) 2006-12-15 2008-06-19 Miasole Protovoltaic module utilizing a flex circuit for reconfiguration
US20080308147A1 (en) * 2007-06-12 2008-12-18 Yiwei Lu Rear electrode structure for use in photovoltaic device such as CIGS/CIS photovoltaic device and method of making same
US8697980B2 (en) 2007-06-19 2014-04-15 Hanergy Holding Group Ltd. Photovoltaic module utilizing an integrated flex circuit and incorporating a bypass diode
US20090014049A1 (en) 2007-07-13 2009-01-15 Miasole Photovoltaic module with integrated energy storage
US20090014058A1 (en) 2007-07-13 2009-01-15 Miasole Rooftop photovoltaic systems
US20090014057A1 (en) 2007-07-13 2009-01-15 Miasole Photovoltaic modules with integrated devices
FR2922046B1 (en) * 2007-10-05 2011-06-24 Saint Gobain IMPROVEMENTS ON ELEMENTS CAPABLE OF COLLECTING LIGHT

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080283389A1 (en) * 2004-05-11 2008-11-20 Honda Motor Co., Ltd. Method for Manufacturing Chalcopyrite Thin-Film Solar Cell
US20080193798A1 (en) * 2004-08-31 2008-08-14 H. C. Starck Inc. Molybdenum Tubular Sputtering Targets with Uniform Grain Size and Texture
US20060096537A1 (en) * 2004-11-10 2006-05-11 Daystar Technologies, Inc. Method and apparatus for forming a thin-film solar cell using a continuous process
US20070062805A1 (en) * 2005-09-20 2007-03-22 Guardian Industries Corp. Sputtering target with bonding layer of varying thickness under target material

Also Published As

Publication number Publication date
US20110171395A1 (en) 2011-07-14
US20100307915A1 (en) 2010-12-09
WO2010120632A2 (en) 2010-10-21
US7785921B1 (en) 2010-08-31
US20100310783A1 (en) 2010-12-09
US8076174B2 (en) 2011-12-13
US8017976B2 (en) 2011-09-13
US7927912B2 (en) 2011-04-19

Similar Documents

Publication Publication Date Title
WO2010120632A3 (en) Barrier for doped molybdenum targets
WO2010120631A3 (en) Method and apparatus for controllable sodium delivery for thin film photovoltaic materials
WO2010120630A3 (en) Method for alkali doping of thin film photovoltaic materials
WO2011110869A3 (en) Photosensitive solid state heterojunction device
WO2010102116A3 (en) Photovoltaic cell having multiple electron donors
WO2012018822A3 (en) Gallium-containing transition metal thin film for cigs nucleation
WO2013162780A3 (en) Back contact for photovoltaic devices such as copper-indium-diselenide solar cells
WO2010147393A3 (en) Solar cell and method of fabricating the same
WO2009129068A3 (en) Thermal conducting materials for solar panel components
WO2012166974A3 (en) Tunneling-junction solar cell with copper grid for concentrated photovoltaic application
WO2011090959A3 (en) Control of composition profiles in annealed cigs absorbers
WO2013162786A3 (en) High-reflectivity back contact for photovoltaic devices such as copper-indium-diselenide solar cells
WO2012061463A3 (en) Luminescent solar concentrator apparatus, method and applications
WO2008156521A3 (en) Textured rear electrode structure for use in photovoltaic device such as cigs/cis solar cell
EP2623478A4 (en) Sintered oxide material, method for manufacturing same, sputtering target, oxide transparent electrically conductive film, method for manufacturing same, and solar cell
WO2011040782A3 (en) Solar power generation apparatus and manufacturing method thereof
WO2011084926A3 (en) Photovoltaic materials with controllable zinc and sodium content and method of making thereof
WO2011055946A3 (en) Solar cell and method for manufacturing same
WO2011119001A3 (en) Solar cell apparatus and method for manufacturing same
WO2010114313A3 (en) Solar cell and manufacturing method thereof
WO2011040781A3 (en) Solar power generation apparatus and manufacturing method thereof
EP2610649A4 (en) Condensing lens, compound-eye lens condenser, and compound-eye concentrating solar cell assembly
WO2012138194A3 (en) Solar cell and manufacturing method thereof
WO2014044871A3 (en) Photovoltaic cell having a heterojunction and method for manufacturing such a cell
WO2010147392A3 (en) Solar cell and method of fabricating the same

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 10764943

Country of ref document: EP

Kind code of ref document: A2

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 10764943

Country of ref document: EP

Kind code of ref document: A2