WO2012134052A3 - Hybrid layer including an oxide layer or an organic layer and an organic polymer layer, and method for preparing same - Google Patents

Hybrid layer including an oxide layer or an organic layer and an organic polymer layer, and method for preparing same Download PDF

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Publication number
WO2012134052A3
WO2012134052A3 PCT/KR2012/000920 KR2012000920W WO2012134052A3 WO 2012134052 A3 WO2012134052 A3 WO 2012134052A3 KR 2012000920 W KR2012000920 W KR 2012000920W WO 2012134052 A3 WO2012134052 A3 WO 2012134052A3
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WO
WIPO (PCT)
Prior art keywords
layer
organic
hybrid
oxide
preparing same
Prior art date
Application number
PCT/KR2012/000920
Other languages
French (fr)
Korean (ko)
Other versions
WO2012134052A2 (en
Inventor
양회창
장미
Original Assignee
인하대학교 산학협력단
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020120002902A external-priority patent/KR101417244B1/en
Application filed by 인하대학교 산학협력단 filed Critical 인하대학교 산학협력단
Priority to JP2013507898A priority Critical patent/JP5583843B2/en
Priority to US13/499,279 priority patent/US9112161B2/en
Publication of WO2012134052A2 publication Critical patent/WO2012134052A2/en
Publication of WO2012134052A3 publication Critical patent/WO2012134052A3/en

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H10K10/474—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising a multilayered structure

Abstract

The present invention relates to a hybrid oxide/organic-polymer layer, to an insulating layer including same, and to an electronic device such as a field-effect transistor. The hybrid layer of the present invention comprises: an oxide layer or an organic layer; and an organic polymer layer chemically bonded to the oxide layer or organic layer.
PCT/KR2012/000920 2011-03-29 2012-02-08 Hybrid layer including an oxide layer or an organic layer and an organic polymer layer, and method for preparing same WO2012134052A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2013507898A JP5583843B2 (en) 2011-03-29 2012-02-08 Hybrid layer including oxide layer or organic material layer and organic polymer layer and method for producing the same
US13/499,279 US9112161B2 (en) 2011-03-29 2012-02-08 Hybrid layer including oxide layer or organic layer and organic polymer layer and manufacturing method thereof

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR10-2011-0028454 2011-03-29
KR20110028454 2011-03-29
KR10-2012-0002902 2012-01-10
KR1020120002902A KR101417244B1 (en) 2011-03-29 2012-01-10 Hybrid layer including oxide layer or organic layer and organic polymer layer and the fabrication method

Publications (2)

Publication Number Publication Date
WO2012134052A2 WO2012134052A2 (en) 2012-10-04
WO2012134052A3 true WO2012134052A3 (en) 2012-12-27

Family

ID=46932030

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2012/000920 WO2012134052A2 (en) 2011-03-29 2012-02-08 Hybrid layer including an oxide layer or an organic layer and an organic polymer layer, and method for preparing same

Country Status (1)

Country Link
WO (1) WO2012134052A2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10475905B2 (en) * 2018-02-01 2019-11-12 International Business Machines Corporation Techniques for vertical FET gate length control

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5229172A (en) * 1993-01-19 1993-07-20 Medtronic, Inc. Modification of polymeric surface by graft polymerization
US5274028A (en) * 1990-12-06 1993-12-28 Baxter International Inc. Polyvinyl pyrrolidone-grafted coatings on preformed polymers
JP3422463B2 (en) * 1998-03-16 2003-06-30 科学技術振興事業団 Graft surface solid and method for producing the same
US20040185260A1 (en) * 2003-02-07 2004-09-23 Clemson University Surface modification of substrates

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5274028A (en) * 1990-12-06 1993-12-28 Baxter International Inc. Polyvinyl pyrrolidone-grafted coatings on preformed polymers
US5229172A (en) * 1993-01-19 1993-07-20 Medtronic, Inc. Modification of polymeric surface by graft polymerization
JP3422463B2 (en) * 1998-03-16 2003-06-30 科学技術振興事業団 Graft surface solid and method for producing the same
US20040185260A1 (en) * 2003-02-07 2004-09-23 Clemson University Surface modification of substrates

Also Published As

Publication number Publication date
WO2012134052A2 (en) 2012-10-04

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