Method to improve transistor Tox using high-angle implants with no ...

1. A method of forming an integrated circuit, comprising:

forming a gate structure over an active area of a semiconductor body;

forming a shadowing structure over the semiconductor body laterally spaced from the gate structure;

performing an angled implant of a first conductivity type at a first angle into the gate structure, wherein the shadowing structure substantially blocks dopant from the angled implant from implanting into the active area; and

performing a source/drain implant of the first conductivity type at a second angle into the gate structure and into the active area, wherein the first angle is greater than the second angle.

2. The method of claim 1, wherein the shadowing structure comprises another gate structure.

3. The method of claim 1, wherein the gate structure comprises a gate electrode overlying a gate dielectric; wherein performing the angled implant comprises performing the angled implant into the gate electrode at the first angle; and wherein performing the source/drain implant comprises performing the source/drain implant into the gate electrode at the second angle.

4. The method of claim 1, wherein the first angle is at least 55 degrees from a normal to a surface of the active area of the semiconductor body; and the second angle is substantially normal to the surface of the active area of the semiconductor body.

5. The method of claim 1, wherein the source/drain implant is performed as a next process step after the angled implant.

6. A method of forming an integrated circuit, comprising:

forming a gate structure over an active area of a semiconductor body, the gate structure extending in a longitudinal direction;

forming a shadowing structure laterally spaced from the gate structure in a direction transverse to the longitudinal direction;

performing an angled implant of a first conductivity type into the gate structure at a first angle in a direction transverse to the longitudinal direction, wherein the shadowing structure substantially blocks dopant from the angled implant from implanting into the active area; and

performing a source/drain implant of the first conductivity type at a second angle into the gate structure and into the active area, wherein the first angle is greater than the second angle.

7. The method of claim 6, wherein the transverse direction of the angled implant is substantially perpendicular to the longitudinal direction.

8. The method of claim 6, wherein the shadowing structure comprises a gate structure formed over the semiconductor body.

9. The method of claim 6, wherein the shadowing structure comprises a gate electrode feature overlying an isolation region associated with the semiconductor body.

10. The method of claim 6, wherein the shadowing structure resides on a first side of the gate structure, the method further comprising forming another shadowing structure on a second, opposite side of the gate structure.

11. The method of claim 10, further comprising performing another angled implant directed toward the second side of the gate structure in a direction transverse to the longitudinal direction, wherein the another shadowing structure substantially blocks dopant from the another angled implant from implanting into the active area of the semiconductor body on the second side of the gate structure.

12. The method of claim 6, further comprising forming sidewall spacers on sidewalls of the gate structure prior to the angled implant, wherein the angled implant results in doping reaching a top portion of the gate structure.

13. The method of claim 6, wherein the source/drain implant is performed after the angled implant.

14. A method of forming an integrated circuit, comprising:

concurrently forming a gate structure and a shadowing structure over a semiconductor body, wherein the shadowing structure is spaced laterally from the gate structure, and the gate structure being formed over an active area in the semiconductor body;

forming an extension region in the active area;

forming sidewall spacers on lateral edges of the gate structure;

performing an angled implant of a first conductivity type at a first angle into the gate structure, wherein the shadowing structure substantially blocks dopant from the angled implant from implanting into the active area; and

performing a source/drain implant of the first conductivity type at a second angle into the gate structure and into the active area, wherein the first angle is greater than the second angle.

15. The method of claim 14, wherein the first angle is at least 55 degrees from a normal to a surface of the active area of the semiconductor body; and the second angle is substantially normal to a surface of the active area of the semiconductor body.

16. The method of claim 14, wherein a width portion of the gate structure extends in a longitudinal direction, and wherein the angled implant is in a direction transverse to the longitudinal direction.

17. The method of claim 16, wherein the transverse direction of the angled implant is substantially perpendicular to the longitudinal direction.

18. The method of claim 14, wherein the shadowing structure comprises a gate structure formed over the semiconductor body.

19. The method of claim 14, wherein the shadowing structure comprises a gate electrode feature overlying an isolation region associated with the semiconductor body.

20. The method of claim 1, wherein forming the gate structure comprises forming a first gate structure having a first height and including a gate electrode; forming the shadowing structure comprises forming a second gate structure having a second height and being laterally spaced from the first gate structure; performing the angled implant comprises performing the angled implant into the gate electrode at the first angle, wherein the angle of the angled implant, first and second heights, and spacing of the first and second gate structures substantially blocks dopant from the angled implant from implanting into the active area; and performing the source/drain implant comprises performing the source/drain implant at a second angle into the gate electrode and into the active area.

21. The method of claim 20, wherein the second gate structure comprises a dummy gate structure.

22. The method of claim 21, wherein the active region is a region bounded by an isolation region; and the second gate structure is formed over the isolation region.

23. The method of claim 20, wherein the first angle is at least 55 degrees from a normal to a surface of the active area of the semiconductor body; and the second angle is substantially normal to the surface of the active area of the semiconductor body.

24. The method of claim 20, wherein the gate structure comprises polycrystalline silicon.

25. The method of claim 1, wherein the gate structure and shadowing structure are formed concurrently by forming a dielectric layer over the semiconductor substrate; depositing a polycrystalline silicon layer over the gate dielectric layer; and patterning the deposited polycrystalline silicon and gate dielectric layer.

26. A method of forming an integrated circuit, comprising:

forming gate structures of given height and spacing over a semiconductor body, the gate structures including gate electrodes;

performing a first implant at a first angle to implant dopant of a first conductivity type into the gate electrodes, the first angle acting with the given height and spacing of the gate structures so that neighboring gate structures shadow one another to substantially block dopant from implanting into the semiconductor body; and

performing a second implant at a second angle to implant dopant of the first conductivity type into the gate structures and into the semiconductor body to form source/drain regions.

27. The method of claim 26, wherein the gate electrodes comprise polycrystalline silicon.

28. The method of claim 26, wherein the first angle is at least 55 degrees from a normal to a surface of the semiconductor body; and the second angle is substantially normal to the surface of the semiconductor body.

29. The method of claim 26, wherein the semiconductor body has active regions separated by isolation structures; the gate structures comprise first gate structures formed over respective active regions and second gate structures formed over respective isolation structures.

30. The method of claim 26, wherein the first implant provides a dopant dose of about 1E15 ions/cm2 at an implant energy in a range of about 1-5 keV.

31. A method of forming an integrated circuit, comprising:

forming gate structures of given height and spacing over respective active regions separated by isolation structures in a semiconductor body;

performing a first implant at a first angle to implant dopant of a first conductivity type into the gate structures, the first angle acting with the given height and spacing of the gate structures so that neighboring gate structures shadow one another to substantially block dopant from implanting into the active regions; and

performing a second implant at a second angle to implant dopant of the first conductivity type into the gate structures and into the active regions to form source/drain regions adjacent the gate structures.

32. The method of claim 31, wherein the active regions comprise NMOS regions and PMOS regions; performing the first implant comprises performing a first n-type implant with PMOS regions masked, and performing a first p-type implant with NMOS regions masked; and performing the second implant comprises performing a second n-type implant with PMOS regions masked, and performing a second p-type implant with NMOS regions masked.

33. The method of claim 31, wherein the gate structures have widths extending in a longitudinal direction and the first implant is performed in a direction that is transverse to the longitudinal direction.