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In some embodiments, a micro-via structure design for high performance integrated circuits is presented. In this regard, an integrated circuit chip package is introduced having a dielectric layer, a plated throughhole in the dielectric layer, and a micro-via coupled with the plated throughhole, wherein the micro-via forms a path around an axis. Other embodiments are also disclosed and claimed.

InventorsChunfei Ye, Boping Wu
Original AssigneeIntel Corporation
Primary Examiner: Victor A Mandala
Attorney: David L. Guglielmi
Current U.S. Classification257/774; 257/698; 257/700; 257/E23.067

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Citations

Cited PatentFiling dateIssue dateOriginal AssigneeTitle
US20050156319Apr 18, 2003Structure of stacked vias in multiple layer electronic device carriers
US20060180905Feb 16, 2005IC package with signal land pads
US20070197099Feb 1, 2007Centipede Systems, Inc.High Performance Electrical Connector
US20080073796Sep 27, 2006Electrically Optimized and Structurally Protected Via Structure for High Speed Signals

Claims

1. An integrated circuit chip package comprising:

a dielectric layer;

a plated throughhole in the dielectric layer; and

a micro-via coupled with the plated throughhole, wherein the micro-via comprises a plurality of substantially horizontal path layers including a single point of contact between substantially horizontal path layers, wherein the substantially horizontal path layers each contain only a portion of a geometric shape and that only in combination form a closed path around an axis.

2. The integrated circuit chip package of claim 1, wherein the axis is substantially vertical.

3. The integrated circuit chip package of claim 2, wherein the path is substantially rectangular in shape.

4. The integrated circuit chip package of claim 2, wherein the path is substantially circular in shape.

5. The integrated circuit chip package of claim 2, wherein the path comprises at least one loop around the axis.

6. The integrated circuit chip package of claim 2, wherein the path comprises one or more turns in a same layer.

7. The integrated circuit chip package of claim 1, wherein the path comprises a rise at an angle from vertical.

8. An apparatus comprising:

an integrated circuit die; and

a substrate, including a dielectric layer, a plurality of plated throughholes in the dielectric layer, and micro-vias coupled with the plated throughholes, wherein the micro-vias comprise a plurality of substantially horizontal path layers including a single point of contact between substantially horizontal path layers, wherein the substantially horizontal path layers each contain only a portion of a geometric shape and that only in combination form a closed path around an axis substantially parallel with the coupled plated throughholes.

9. The apparatus of claim 8, wherein the path is substantially triangular in shape.

10. The apparatus of claim 8, wherein the path is polygonal in shape.

11. The apparatus of claim 8, wherein the path comprises one or more turns in a same layer.

12. An electronic appliance comprising:

a network controller;

a system memory; and

a processor, wherein the processor includes a substrate, including a dielectric layer, a plated throughhole in the dielectric layer, and a micro-via coupled with the plated throughhole, wherein the micro-via comprises a plurality of substantially horizontal path layers including a single point of contact between substantially horizontal path layers, wherein the substantially horizontal path layers each contain only a portion of a geometric shape and that only in combination form a closed path around an axis.

13. The electronic appliance of claim 12, wherein the path comprises at least one loop around the axis.

14. The electronic appliance of claim 12, wherein the path is polygonal in shape.

15. The electronic appliance of claim 12, wherein the path comprises one or more turns in a same layer.

16. A method comprising:

forming a plated through-hole; and

forming a micro-via coupled with the throughhole, wherein the micro-via comprises a plurality of substantially horizontal path layers including a single point of contact between substantially horizontal path layers, wherein the substantially horizontal path layers each contain only a portion of a geometric shape and that only in combination form a closed path around an axis.

17. The method of claim 16, wherein the path is substantially circular in shape.

18. The method of claim 16, wherein the path is substantially rectangular in shape.

19. The method of claim 16, wherein the path comprises one or more turns in a same layer.