A method of making semiconductor quantum wires employs a semiconductor wafer (14) as starting material. The wafer (14) is weakly doped p type with a shallow heavily doped p layer therein for current flow uniformity purposes. The wafer (14) is anodised in 20% aqueous hydrofluoric acid to produce a layer...http://www.google.com/patents/US6369405?utm_source=gb-gplus-sharePatent US6369405 - Silicon quantum wires
