In the fabrication of a CMOS-TFT, non-selectively doping (for both of p- and n-type TFTs) and selectively doping (only for the n-type TFT) with p-type impurities (B: boron) are successively performed at very low concentrations to control the threshold voltages (Vthp and Vthn). More specifically, the...http://www.google.com/patents/US6872978?utm_source=gb-gplus-sharePatent US6872978 - CMOS-type thin film semiconductor device and method of fabricating the same
