Forming a shallow trench capacitor in conjunction with an FET by forming a plurality of STI trenches; for the FET, implanting a first cell well having a first polarity between a first and a second of the STI trenches; for the capacitor, implanting a second cell well having a second polarity in an area...http://www.google.com/patents/US7875919?utm_source=gb-gplus-sharePatent US7875919 - Shallow trench capacitor compatible with high-K / metal gate
