The memory cells of an integrated memory are successively tested and immediately following the detection of a defect of the memory cell currently being tested, the affected row line or column line is replaced by programming one of the redundant lines. After a certain number of the redundant lines have...http://www.google.com/patents/US6418069?utm_source=gb-gplus-sharePatent US6418069 - Method of repairing defective memory cells of an integrated memory
