The invention relates to improving the switching reliability of a magnetic memory cell in a magnetic random access memory (MRAM). Embodiments of the invention add an antiferromagnet to a magnetic memory cell. An antiferromagnetic layer can be formed adjacent to a soft layer in the MRAM on a side of the...http://www.google.com/patents/US7170123?utm_source=gb-gplus-sharePatent US7170123 - Antiferromagnetically stabilized pseudo spin valve for memory applications
