A light emitting device includes a first semiconductor layer of a first conductivity type, an active region, and a second semiconductor layer of a second conductivity type. First and second contacts are connected to the first and second semiconductor layers. In some embodiments at least one of the first...http://www.google.com/patents/US20040160173?utm_source=gb-gplus-sharePatent US20040160173 - High-powered light emitting device with improved thermal properties
