A metal semiconductor field effect transistor (MESFET) having a reduced control voltage while maintaining appropriate performance characteristics is disclosed. The MESFET is fabricated by a two step implantation technique for fabricating the ohmic contact region in the channel between the...http://www.google.com/patents/US5698875?utm_source=gb-gplus-sharePatent US5698875 - Metal-semiconductor field effect transistor having reduced control voltage and well controlled pinch off voltage 
