The present invention provides a semiconductor device having dual silicon nitride liners and a reformed silicide layer and related methods for the manufacture of such a device. The reformed silicide layer has a thickness and resistance substantially similar to a silicide layer not exposed to the formation...http://www.google.com/patents/US20060128145?utm_source=gb-gplus-sharePatent US20060128145 - DEVICE HAVING DUAL ETCH STOP LINER AND REFORMED SILICIDE LAYER AND RELATED METHODS
