A device isolation scheme that is particularly suited to the fabrication of high density, high performance CMOS, bipolar, or BiCMOS devices, and overcomes many of the problems associated with existing isolation methods. Photolithographic techniques are used to define active regions on a substrate. Using...http://www.google.com/patents/US5411913?utm_source=gb-gplus-sharePatent US5411913 - Simple planarized trench isolation and field oxide formation using poly-silicon
