A method of forming a thin film transistor relative to a substrate includes, a) providing a thin film transistor layer of polycrystalline material on a substrate, the polycrystalline material comprising grain boundaries; b) providing a fluorine containing layer adjacent the polycrystalline thin film...http://www.google.com/patents/US7452760?utm_source=gb-gplus-sharePatent US7452760 - Thin film transistors and semiconductor constructions
