This invention includes methods of forming a phosphorus doped silicon dioxide comprising layers, and methods of forming trench isolation in the fabrication of integrated circuitry. In one implementation, a method of forming a phosphorus doped silicon dioxide comprising layer includes positioning a substrate...http://www.google.com/patents/US7790632?utm_source=gb-gplus-sharePatent US7790632 - Methods of forming a phosphorus doped silicon dioxide-comprising layer
