Display device with electron-emitting device with electron-emitting region ...

1. A method of preparing an electron-emitting device, comprising the steps of:

forming electrodes opposed to each other on a substrate;

forming between the electrodes and in contact therewith an insulating layer in which fine particles are completely enclosed; and

etching the insulating layer so as to partially expose the fine particles.

2. A method of preparing an electron-emitting device comprising the steps of:

forming electrodes opposed to each other on a substrate;

forming between the electrodes and in contact therewith a semiconductor layer in which fine particles are completely enclosed; and

etching the semiconductor layer so as to partially expose the fine particles.

3. A method of preparing an electron-emitting device, comprising the steps of:

(i) forming a semiconductor layer on a substrate;

(ii) forming electrodes on said semiconductor layer; and

(iii) dispersing fine particles between said electrodes.

4. The method of claim 3, wherein said semiconductor layer comprises a layer comprising an amorphous silicon semiconductor, a crystallized silicon semiconductor, or a compound semiconductor.

5. The method of claim 3, wherein said semiconductor layer has a film thickness of from 50 angstroms to 10 μm.

id="INS-S-00034" date="20080212" 6. A method of fabricating an electron-emitting device which comprises a pair of electrodes and a layer disposed between the electrodes, the method comprising the steps of:

disposing the pair of electrodes in first and second regions on a substrate, respectively; and

providing the layer between the regions, the layer comprising a metal and a semiconductor, and being in contact with the electrodes so that current flows from one of the electrodes to another one of the electrodes through the layer by a voltage applied between the electrodes,

wherein the metal is Pd.id="INS-S-00034"

id="INS-S-00035" date="20080212" 7. The method of claim 6, wherein the semiconductor is selected from the group consisting of carbon and SnO2.id="INS-S-00035"

id="INS-S-00036" date="20080212" 8. A method of fabricating an electron-emitting device, comprising the steps of:

disposing a pair of electrodes in first and second regions on a substrate, respectively; and

providing a layer between the regions, the layer comprising carbon and a metal, and being in contact with the electrodes so that current flows from one of the electrodes to another one of the electrodes through the layer by a voltage applied between the electrodes,

wherein the metal is Pd.id="INS-S-00036"

id="INS-S-00037" date="20080212" 9. A method of fabricating an electron-emitting device, comprising the steps of:

disposing a pair of electrodes in first and second regions on a substrate, respectively; and

providing a layer between the regions, the layer comprising carbon and a metal, and being in contact with the electrodes so that current flows from one of the electrodes to another one of the electrodes through the layer by a voltage applied between the electrodes,

wherein the layer comprises primarily carbon.id="INS-S-00037"

id="INS-S-00038" date="20080212" 10. A method of fabricating an electron-emitting device, comprising the steps of:

disposing a pair of electrodes in first and second regions on a substrate, respectively; and

providing a layer between the regions, the layer being in contact with the electrodes so that current flows from one of the electrodes to another one of the electrodes through the layer by a voltage applied between the electrodes, the layer comprising an insulating material and at least some conductive particles which protrude from a surface of the layer,

wherein the conductive particles comprise Pd.id="INS-S-00038"

id="INS-S-00039" date="20080212" 11. The method of claim 10, wherein the insulating material is SiO2.id="INS-S-00039"

id="INS-S-00040" date="20080212" 12. A method of fabricating an electron-emitting device, comprising the steps of:

disposing a pair of electrodes in first and second regions on a substrate, respectively; and

providing a layer between the regions, the layer comprising carbon and at least some conductive particles, and being in contact with the electrodes so that current flows from one of the electrodes to another one of the electrodes through the layer by a voltage applied between the electrodes,

wherein the layer comprises primarily carbon.id="INS-S-00040"

id="INS-S-00041" date="20080212" 13. The method of claim 12, wherein the conductive particles comprise a material selected from the group consisting of a metal and a semiconductor.id="INS-S-00041"

id="INS-S-00042" date="20080212" 14. The method of claim 13, wherein the metal is Pd.id="INS-S-00042"

id="INS-S-00043" date="20080212" 15. The method of any one of claims 12, 13, and 14, wherein at least some of the conductive particles protrude from a surface of the layer.id="INS-S-00043"

id="INS-S-00044" date="20080212" 16. The method of any one of claims 10, 12, 13 and 14, wherein the conductive particles are spatially separated from one another.id="INS-S-00044"

id="INS-S-00045" date="20080212" 17. The method of any one of claims 10, 12, 13 and 14, wherein diameters of the conductive particles are in a range of several tens of angstroms to several micrometers.id="INS-S-00045"

id="INS-S-00046" date="20080212" 18. A method of fabricating an electron-emitting device, comprising the steps of:

forming an insulating layer on a first portion of a surface of a substrate, so as to define a step-like structure;

disposing a first electrode on a second portion of the surface of the substrate;

disposing a second electrode on an upper surface of the insulating layer; and

providing a layer along a side of the insulating layer, between the first and second electrodes, the layer comprising a metal and a semiconductor and being in contact with the first and second electrodes so that current flows from the first electrode to the second electrode through the layer by a voltage applied between the first and second electrodes.id="INS-S-00046"

id="INS-S-00047" date="20080212" 19. The method of claim 18, wherein the metal is Pd.id="INS-S-00047"

id="INS-S-00048" date="20080212" 20. The method of claim 19, wherein the semiconductor is carbon.id="INS-S-00048"

id="INS-S-00049" date="20080212" 21. A method of fabricating an electron-emitting device, comprising the steps of:

forming an insulating layer on a first portion of a surface of a substrate, so as to define a step-like structure;

disposing a first electrode on a second portion of the surface of the substrate;

disposing a second electrode on an upper surface of the insulating layer; and

providing a layer along a side of the insulating layer, between the first and second electrodes, the layer comprising an insulating material and a conductive material, and being in contact with the first and second electrodes so that current flows from the first electrode to the second electrode through the layer by a voltage applied between the first and second electrodes.id="INS-S-00049"

id="INS-S-00050" date="20080212" 22. The method of claim 21, wherein the conductive material is selected from the group consisting of Pd and SnO2.id="INS-S-00050"

id="INS-S-00051" date="20080212" 23. The method of claim 22, wherein the insulating material is SiO2.id="INS-S-00051"

id="INS-S-00052" date="20080212" 24. A method of fabricating an electron-emitting device, comprising the steps of:

forming an insulating layer on a first portion of a surface of a substrate, so as to define a step-like structure;

disposing a first electrode on a second portion of the surface of the substrate;

disposing a second electrode on an upper surface of the insulating layer; and

providing a layer along a side of the insulating layer, between and in contact with the first and second electrodes so that current flows from the first electrode to the second electrode through the layer by a voltage applied between the first and second electrodes, the layer including carbon and at least some conductive particles.id="INS-S-00052"

id="INS-S-00053" date="20080212" 25. The method of claim 24, wherein the layer comprises primarily carbon.id="INS-S-00053"

id="INS-S-00054" date="20080212" 26. The method of claim 24 or 25, wherein the conductive particles include Pd.id="INS-S-00054"

id="INS-S-00055" date="20080212" 27. A method of fabricating an electron source that includes a plurality of electron-emitting devices, each electron-emitting device comprising a pair of electrodes and a layer disposed between the electrodes, wherein each electron-emitting device is prepared by a method comprising the steps of:

disposing the pair of electrodes in first and second regions on a substrate, respectively; and

providing the layer between the regions, the layer comprising Pd and a semiconductor, and being in contact with the electrodes so that current flows from one of the electrodes to another one of the electrodes through the layer by a voltage applied between the electrodes.id="INS-S-00055"

id="INS-S-00056" date="20080212" 28. A method of fabricating an electron source that includes a plurality of electron-emitting devices, each electron-emitting device being prepared by a method comprising the steps of:

disposing a pair of electrodes in first and second regions on a substrate, respectively; and

providing a layer between the regions, the layer comprising carbon and Pd, and being in contact with the electrodes so that current flows from one of the electrodes to another one of the electrodes through the layer by a voltage applied between the electrodes.id="INS-S-00056"

id="INS-S-00057" date="20080212" 29. A method of fabricating an electron source that includes a plurality of electron-emitting devices, each electron-emitting device being prepared by a method comprising the steps of:

disposing a pair of electrodes in first and second regions on a substrate, respectively; and

providing a layer between the regions, the layer including an insulating material and at least some conductive particles, wherein at least some of the conductive particles protrude from a surface of the layer, and the layer is in contact with the electrodes so that current flows from one of the electrodes to another one of the electrodes through the layer by a voltage applied between the electrodes,

wherein the conductive particles comprise Pd.id="INS-S-00057"

id="INS-S-00058" date="20080212" 30. A method of fabricating an electron source that includes a plurality of electron-emitting devices, each electron-emitting device being prepared by a method comprising the steps of:

forming an insulating layer on a first portion of a surface of a substrate, so as to define a step-like structure;

disposing a first electrode on a second portion of the surface of the substrate;

disposing a second electrode on an upper surface of the insulating layer; and

providing a layer along a side of the insulating layer, between and in contact with the first and second electrodes so that current flows from the first electrode to the second electrode through the layer by a voltage applied between the first and second electrodes, the layer comprising a metal and a semiconductor.id="INS-S-00058"

id="INS-S-00059" date="20080212" 31. A method of fabricating an electron source that includes a plurality of electron-emitting devices, each electron-emitting device being prepared by a method comprising the steps of:

forming an insulating layer on a first portion of a surface of a substrate, so as to define a step-like structure;

disposing a first electrode on a second portion of the surface of the substrate;

disposing a second electrode on an upper surface of the insulating layer; and

providing a layer along a side of the insulating layer, between and in contact with the first and second electrodes so that current flows from the first electrode to the second electrode through the layer by a voltage applied between the first and second electrodes, the layer comprising an insulating material and a conductive material.id="INS-S-00059"

id="INS-S-00060" date="20080212" 32. A method of fabricating an electron source that includes a plurality of electron-emitting devices, each electron-emitting device being prepared by a method comprising the steps of:

forming an insulating layer on a first portion of a surface of a substrate, so as to define a step-like structure;

disposing a first electrode on a second portion of the surface of the substrate;

disposing a second electrode on an upper surface of the insulating layer; and

providing a layer along a side of the insulating layer, between and in contact with the first and second electrodes so that current flows from the first electrode to the second electrode through the layer by a voltage applied between the first and second electrodes, the layer including carbon and at least some conductive particles.id="INS-S-00060"

id="INS-S-00061" date="20080212" 33. A method of fabricating an image forming apparatus which includes an electron source and a phosphor plate, the electron source including a plurality of electron-emitting devices that are each prepared by a method according to any one of claims 27-32.id="INS-S-00061"

id="INS-S-00062" date="20080212" 34. A method of fabricating an electron-emitting device which comprises a pair of electrodes and a layer disposed between the electrodes, the method comprising the steps of:

disposing a pair of electrodes in first and second regions on a substrate, respectively; and

providing the layer between the regions, the layer being a semiconductor layer that includes a metal, and being in contact with the electrodes so that current flows from one of the electrodes to another one of the electrodes through the layer by a voltage applied between the electrodes,

wherein the metal is Pd.id="INS-S-00062"

id="INS-S-00063" date="20080212" 35. The method of claim 34, wherein the semiconductor layer includes a semiconductor selected from the group consisting of carbon and SnO2.id="INS-S-00063"

id="INS-S-00064" date="20080212" 36. A method of fabricating an electron-emitting device, comprising the steps of:

forming an insulating layer on a first portion of a surface of a substrate, so as to define a step-like structure;

disposing a first electrode on a second portion of the surface of the substrate;

disposing a second electrode on an upper surface of the insulating layer; and

providing a layer along a side of the insulating layer, between and in contact with the first and second electrodes so that current flows from the first electrode to the second electrode through the layer by a voltage applied between the first and second electrodes, the layer being a semiconductor layer which includes a metal.id="INS-S-00064"

id="INS-S-00065" date="20080212" 37. A method of fabricating an electron-emitting device, comprising the steps of:

forming an insulating layer on a first portion of a surface of a substrate, so as to define a step-like structure;

disposing a first electrode on a second portion of the surface of the substrate;

disposing a second electrode on an upper surface of the insulating layer; and

providing a layer along a side of the insulating layer, between and in contact with the first and second electrodes so that current flows from the first electrode to the second electrode through the layer by a voltage applied between the first and second electrodes, the layer being an insulating layer which includes a conductive material.id="INS-S-00065"

id="INS-S-00066" date="20080212" 38. A method of fabricating an electron source that includes a plurality of electron-emitting devices, each electron-emitting device being prepared by a method comprising the steps of:

disposing a pair of electrodes in first and second regions on a substrate, respectively; and

providing a layer between the regions, the layer comprising carbon and at least Pd particles, and being in contact with the electrodes so that current flows from one of the electrodes to another one of the electrodes through the layer by a voltage applied between the electrodes.id="INS-S-00066"

id="INS-S-00067" date="20080212" 39. A method of fabricating an electron source that includes a plurality of electron-emitting devices, each electron-emitting device comprising a pair of electrodes and a layer disposed between the electrodes, each electron-emitting device being prepared by a method comprising the steps of:

disposing a pair of electrodes in first and second regions on a substrate, respectively; and

providing the layer between the regions, the layer being a semiconductor layer which includes Pd, and being in contact with the electrodes so that current flows from one of the electrodes to another one of the electrodes through the layer by a voltage applied between the electrodes.id="INS-S-00067"

id="INS-S-00068" date="20080212" 40. A method of fabricating an electron source that includes a plurality of electron-emitting devices, each electron-emitting device being prepared by a method comprising the steps of:

disposing a pair of electrodes in first and second regions on a substrate, respectively; and

providing a layer between the regions, the layer being a carbon layer which includes Pd, and being in contact with the electrodes so that current flows from one of the electrodes to another one of the electrodes through the layer by a voltage applied between the electrodes.id="INS-S-00068"

id="INS-S-00069" date="20080212" 41. A method of fabricating an electron source that includes a plurality of electron-emitting devices, each electron-emitting device being prepared by a method comprising the steps of:

disposing a pair of electrodes in first and second regions on a substrate, respectively; and

providing a layer between the regions, the layer being an insulated layer which includes at least some conductive particles, wherein at least some of the conductive particles protrude from a surface of the layer, and the layer is in contact with the electrodes so that current flows from one of the electrodes to another one of the electrodes through the layer by a voltage applied between the electrodes,

wherein the conductive particles comprise Pd.id="INS-S-00069"

id="INS-S-00070" date="20080212" 42. A method of fabricating an electron source that includes a plurality of electron-emitting devices, each electron-emitting device being prepared by a method comprising the steps of:

forming an insulating layer on a first portion of a surface of a substrate, so as to define a step-like structure;

disposing a first electrode on a second portion of the surface of the substrate;

disposing a second electrode on an upper surface of the insulating layer; and

providing a layer along a side of the insulating layer, between and in contact with the first and second electrodes so that current flows from the first electrode to the second electrode through the layer by a voltage applied between the first and second electrodes, the layer being a semiconductor layer which includes a metal.id="INS-S-00070"

id="INS-S-00071" date="20080212" 43. A method of fabricating an electron source that includes a plurality of electron-emitting devices, each electron-emitting device being prepared by a method comprising the steps of:

forming an insulating layer on a first portion of a surface of a substrate, so as to define a step-like structure;

disposing a first electrode on a second portion of the surface of the substrate;

disposing a second electrode on an upper surface of the insulating layer; and

providing a layer along a side of the insulating layer, between and in contact with the first and second electrodes so that current flows from the first electrode to the second electrode through the layer by a voltage applied between the first and second electrodes, the layer being an insulating layer which includes a conductive material.id="INS-S-00071"

id="INS-S-00072" date="20080212" 44. A method of fabricating an image forming apparatus which includes an electron source and a phosphor plate, the electron source including a plurality of electron-emitting devices that are each prepared by a method according to any one of claims 38-43.id="INS-S-00072"

id="INS-S-00073" date="20080212" 45. A method of fabricating an electron-emitting device, comprising the steps of:

disposing a pair of electrodes in first and second regions on a substrate, respectively; and

providing a layer between the regions, the layer comprising carbon and a metal particle, and being in contact with the electrodes so that current flows from one of the electrodes to another one of the electrodes through the layer by a voltage applied between the electrodes,

wherein a diameter of the metal particle is in a range of several tens of angstroms to several micrometers.id="INS-S-00073"

id="INS-S-00074" date="20080212" 46. The method of claim 45, wherein the metal particle comprises Pd.id="INS-S-00074"

id="INS-S-00075" date="20080212" 47. A method of fabricating an electron-emitting device, comprising the steps of:

disposing a pair of electrodes in first and second regions on a substrate, respectively; and

providing a layer between the regions, the layer comprising carbon and at least some conductive particles, and being in contact with the electrodes so that current flows from one of the electrodes to another one of the electrodes through the layer by a voltage applied between the electrodes,

wherein diameters of the conductive particles are in a range of several tens of angstroms to several micrometers.id="INS-S-00075"

id="INS-S-00076" date="20080212" 48. The method of claim 47, wherein the conductive particles comprise Pd.id="INS-S-00076"