A shallow junction that previously would require the use of a low-energy ion implanter can be directly formed by high-energy or middle-energy ion implanters such that the manufacturer need not purchase a new low-energy ion implanter. In one embodiment, an ion-implantation method for forming a shallow...http://www.google.com/patents/US7358168?utm_source=gb-gplus-sharePatent US7358168 - Ion implantation method for forming a shallow junction
