Shifts in the apparent charge stored by a charge storage region such as a floating gate in a non-volatile memory cell can occur because of electrical field coupling based on charge stored in adjacent (or other) charge storage regions. Although not exclusively, the effects are most pronounced in situations...http://www.google.com/patents/US7684247?utm_source=gb-gplus-sharePatent US7684247 - Reverse reading in non-volatile memory with compensation for coupling
