A method is provided to clean slurry particles from a surface in which tungsten and dielectric are coexposed after a dielectric CMP step. Such a surface is formed when tungsten features are patterned and etched, the tungsten features are covered with dielectric, and the dielectric is planarized to expose...http://www.google.com/patents/US20060128153?utm_source=gb-gplus-sharePatent US20060128153 - Method for cleaning slurry particles from a surface polished by chemical mechanical polishing
