A semiconductor device having an improved protection scheme and a temperature compensated sustaining voltage is provided by integrating a plurality of temperature compensated voltage reference diodes between the drain and the gate of the semiconductor device. The diodes protect the device by clamping...http://www.google.com/patents/US5631187?utm_source=gb-gplus-sharePatent US5631187 - Method for making semiconductor device having high energy sustaining capability and a temperature compensated sustaining voltage
