In fabricating a thin film transistor, an active layer comprising a silicon semiconductor is formed on a substrate having an insulating surface. Hydrogen is introduced into The active layer. A thin film comprising SiOxNy is formed to cover the active layer and then a gate insulating film comprising a...http://www.google.com/patents/US7547915?utm_source=gb-gplus-sharePatent US7547915 - Semiconductor device having SiOxNy film
