Bridging between nickel silicide layers on a gate electrode and source/drain regions along silicon nitride sidewall spacers is prevented by employing composite silicon nitride sidewall spacers comprising an outer layer having reduced free silicon. Embodiments include forming composite silicon nitride...http://www.google.com/patents/US6545370?utm_source=gb-gplus-sharePatent US6545370 - Composite silicon nitride sidewall spacers for reduced nickel silicide bridging
